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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7

Correspondence: Bill of Materials Variation and Module Degradation in Utility-Scale PV Systems

We report photovoltaic (PV) modules of the same make and model are often assembled with different bills of materials (BOMs). In this correspondence, we revisit two case studies of utility-scale silicon PV systems in which these differing BOMs were associated with faster-than-expected degradation. In one of the sites, we found that different metallization paste had been used for grid lines in some cells leading to loss of contact to the cell and severe series resistance degradation. We provide details on the observation of this mechanism at two additional sites not described in the original article. In a second case study, we found that two different types of cell had been used, and that they could be distinguished by their back contact. Cells with uniform back contacts suffered from light and elevated temperature induced degradation (LeTID), while those with local back contacts did not. We also briefly describe BOM variations observed at other sites to illustrate the extent of the challenge. Our results from both sites underscore that variations in BOM, even among modules of the same make and model can lead to reliability challenges.

14 SOLAR ENERGY↗

Advanced Photovoltaic Module Characterization: Using Image Transformers for Current–Voltage Curve Prediction From Electroluminescence Images

Individual photovoltaic (PV) module health monitoring can be a daunting task for operation and maintenance of solar farms. Modules can be inspected through luminescence, thermal imaging, and current–voltage (I–V) curve analyzes for identification of damage and power loss. I–V curves provide easily interpretable data to determine module health as they directly provide electrical performance metrics. However, in order to obtain these curves, modules must be disconnected from the array and either removed to a solar simulator or characterized in situ with corrections for module temperature, the incident solar spectrum, and intensity. Luminescence or thermal images of a module are relatively easy to acquire in situ. Electroluminescence (EL) images highlight physical defects in the modules but do not provide easily interpretable features to correlate with electrical performance. This work presents a SWin transformer network to predict I–V curves for PV modules from their corresponding EL images. The predicted I–V curves allow the accurate prediction of the maximum power point (MPP), short-circuit current I sc , and open-circuit voltage V oc with a mean error less of than 1%. Comparing single diode model (SDM) parameters extracted from the predicted curves to those extracted from the true curves, the series resistance R s demonstrates a mean error of 5.19%, and the photocurrent I a mean error of 0.197%. The shunt resistance R sh and dark current Io parameters are predicted with larger errors because of their sensitivity to small changes in the I–V curve.

Byford, Brandon K. [New Mexico State Univ., Las Cr↗

Fill Factor Loss in Fielded Photovoltaic Modules Due to Metallization Failures, Characterized by Luminescence and Thermal Imaging

Understanding the causes of photovoltaic module failure in the field can be achieved using spatially-resolved imaging tools in combination with current-voltage (IV) characterization. We evaluate 23 field-degraded modules by comparing their IV characteristics with module images obtained by electroluminescence, photoluminescence, UV-fluorescence, and dark lock-in thermography. We identify primarily metallization failures (metallization series resistance, solder point heating, broken fingers, disrupted interconnects) in these modules that has led to a severe drop in the fill factor and up to 35% power loss over only 2 years of deployment.

14 SOLAR ENERGY↗

Highly Reliable Multi-Port Smart Inverter Modules for PV-Based Energy Systems

Generally, large electrolytic capacitors (E-caps) are required to decouple the double-line frequency power fluctuation inherent in all single-phase dc-ac or ac-dc converters. These E-caps pose the weak link in the photovoltaic (PV) inverter because they have poor reliability as a result of short life expectancy and higher equivalent series resistance (ESR) which leads to lower system efficiency. In this paper, multiport smart dual-inverter modules are proposed for residential PV inverter systems with balanced outputs to eliminate the requirement of large decoupling capacitors, thus leading to more reliable and highly efficient inverter modules. The balanced dual outputs are controlled in phase quadrature such that the double frequency current is completely eliminated. One phase supports the standalone residential loads, and the other phase interfaces with the grid, which is synchronized to the utility grid. Also, the proposed modular configuration is scalable to accommodate higher power rating by stacking and paralleling multiple modules. Simulation results for the dual-inverter modules rated for 1 kW each are presented to validate the proposed concept. Experimental results from a controller hardware-in-the-loop (CHIL) platform also verify its feasibility.

14 SOLAR ENERGY↗

Inverted GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

Here we present the experimental results of an inverted three-terminal heterojunction bipolar transistor solar cell (HBTSC) made of GaInP/GaAs. The inverted growth and processing enables contacting the intermediate layer from the bottom, which increases the cell performance by reducing shadow factor and series resistance at the same time. With this prototype we show that an inverted processing of a three-terminal solar cell is feasible and pave the way for the application of epitaxial lift-off, substrate reuse and mechanical stacking to the HBTSC which can eventually lead to a low-cost high-efficiency III-V-on-Si HBTSC technology.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Near-Busbar Degradation of Screen-Printed Metallization in Silicon Photovoltaic Modules

We study photovoltaic (PV) module degradation after extended accelerated stress testing including 2000 hours of damp heat followed by a current-injection procedure meant to stabilize defects linked to light-induced degradation. In addition to de-stabilization/recovery of light-induced defects, we observe severe series resistance due to loss of contact between the Si cell and near-busbar screen-printed metallization (i.e. grid finger delamination). Using scanning electron microscopy and energy dispersive x-ray spectroscopy on cell fragments cored from the module, we show poor contact is caused by a gap between the screen-printed Ag metallization and Si due to missing glass frit.

degradation↗

Luminescence and Thermal Imaging Applied to Half-Cut-Cell and Emitter-Wrap-Through-Cell Modules

Imaging techniques provide spatial details and visualization of module defects and degradation mechanisms that affect energy conversion efficiency and performance. We apply photoluminescence, electroluminescence, and dark lock-in thermography imaging techniques to evaluate new modules in their initial state and after applying stresses of damp heat, light-induced-degradation regeneration parameters, thermal cycling, and humidity-freeze cycles. One module uses emitter-wrap-through cells with back contacts connected to a metal-foil backplane, and the other is composed of half-cut cells. Imaging shows examples on non-uniform degradation and damage such as cells that degrade and recover under the applied conditions, cells with cracks and handling damage, and cells with increasing series resistance.

degradation↗

A Comparison of CdS and Zn(O,S) Buffer Layers in (Ag,Cu)(In,Ga)Se2 Solar Cells

Cu(In,Ga)Se 2 -based solar cells typically use a C dS buffer layer, even though its relatively low bandgap causes parasitic absorption. While alternatives to CdS have been explored in other studies, limited results have been shown for Ag-alloyed CIGS (ACIGS). In this study, ACIGS solar cells with both CdS and Zn(O,S) buffer layers were fabricated and compared for solar cell performance. The Zn(O,S) buffer slightly improved J sc through reduced absorption, although surface optimization is necessary. The Zn(O,S) ACIGS also had improved FF through reduced series resistance and ideality factor, which could be improved further through optimization. However, the Voc in the Zn(O,S) samples was reduced, likely due to increased bulk and front interface recombination. This study shows the promise of Zn(O,S) as a buffer layer in ACIGS solar cells and suggests pathways for further improvement.

absorption↗

Capability of Impedance Measurement Using Spread Spectrum Time-Domain Reflectometry

Spread spectrum time-domain reflectometry (SSTDR) has been proposed for measuring electrical impedance on live, energized systems, in electrically noisy environments, or for measuring multiple channels simultaneously. Here we evaluate the capability of SSTDR for impedance measurement from near dc to 96 MHz and find that they agree very well with measurements from a vector network analyzer (VNA). Time gating is used to remove (calibrate out) transmission line effects. We evaluate the frequency ranges over which SSTDR at different modulation frequencies is accurate for the measurement of series resistive–capacitive ( RC ) loads and observe that fusing measurements from multiple modulation frequencies can broaden the effective measurement bandwidth.

14 SOLAR ENERGY↗

Performance and reliability of β-Ga 2 O 3 Schottky barrier diodes at high temperature

Beta-gallium oxide (ß-Ga 2 O 3 ) is an ultrawide bandgap semiconductor that has potential for power electronic applications and devices operating at high temperatures. Particularly important for these applications are its 4.9 eV bandgap, facile electron doping, and the ability to grow ß-Ga 2 O 3 crystals from the melt. In this work, vertical ß-Ga 2 O 3 Schottky barrier diodes were fabricated using Pt Schottky and Ti-based Ohmic contacts and Au contact pads on unintentionally doped n-type, (2¯01)-oriented single crystal substrates. The diode’s temperature-dependent electrical properties up to 400°C were investigated, and the Pt/Ga 2 O 3 Schottky barrier height was determined to be close to 1.2 eV. The degradation of the contacts over multiple cycles up to 400°C was observed, resulting in a significant increase in series resistance of the diodes by 1000× at ambient temperature after they were cycled. According to electron microscopy measurements, this degradation is likely due in part to the migration and oxidation of Ti at the top surface of the Au contact pads. This degradation highlights the need for further research and development to ensure stable Ohmic and Schottky contacts to Ga 2 O 3 at temperatures above 400°C.

36 MATERIALS SCIENCE↗

OPET Hardware (Open PV Electrical Tool Hardware) [SWR-25-42]

OPET (Open-source Photovoltaic Electrical Tool) is used for performance measurements of solar photovoltaic (PV) devices in the field under natural sunlight or in the lab under artificial light. Its primary use is in research and development of solar cells and modules, specifically in reliability and durability research of PV devices. Some features and functions include: -IV curve measurements with linear or cosine distributed measurement points -PV device active loading at open circuit voltage (Voc), short circuit current (Isc) and maximum power point (Pmp) -Bias power supply to overcome series resistance in contact wires for Isc measurements and loading -PV voltage input in five ranges from 1V to 100V -PV current input ranges -Low current version, six current ranges from 1.1mA to 340mA -High current version, six current ranges from 50mA to 15A -IO ports for I2C and SPI temperature sensor Arduino extension boards -Integrated fan control This repository contains everything relating to the hardware of the OPET device. If you are looking for the firmware or software repositories, links are below: https://github.com/NREL/opet-firmware https://github.com/NREL/opet-control

McDanold, Byron [National Renewable Energy Laborat↗

Length and Seed Current Scaling of a Mark X HG driven, 8 inch PBX9501 RancheroS FCG system: II

This report is intended to examine the ultimate operating limits of the combined Pt. 88 capacitor bank (CB) + MarkX Helical Generator (HG) driving a RancheroS Flux Compression Generator (FCG) with various physics experiment load inductances. As such, many degradation mechanisms are neglected in this study. In actual use, degradation of the HG output current delivered to the FCG will probably occur. Internal changes in the HG can occur due to both Ohmic heating in the generator leading to a time varying series resistance [R(t)] such as that seen in the first trial (Shot 0) of the MarkX, as well as any misbehavior, such HG internal turn to turn shorts such as seem to have occurred in subsequent MarkX tests. Both reduce the output current from the HG that is used to seed the FCG. The results discussed here are intended to probe the limits of the RancheroS driving various loads, in an ideal situation in which none of the HG or system degradation mechanisms prior to the FCG armature first motion (FM) reduce the seed current. The HG is modeled simply as a time varying inductance [L(t), as measured in Shot 0], with a constant internal resistance [R(t) = 0.2mOhm]. The RancheroS itself is fully modeled, including all FCG and load degradation mechanisms, thus probing the ultimate capabilities of the full system, independent of problems upstream of the FCG.

47 OTHER INSTRUMENTATION↗

Network Models of Active Degradation Mechanisms and Pathways for Service Life Prediction of Indoor and Outdoor PV Modules

ct: PV service lifetime prediction (SLP) enables accurate calculation of levelized cost of energy (LCOE), which is crucial to rationalizing PV investment and installation. However, SLP is challeging since PV reliability in the field is affected by many combined factors, including various environmental stresses and module quality. In order to map out the active degradation mechanisms and pathways that best resemble real world conditions, we introduce the framework of a study protocol and use network models fitted to data, to enable analysis and SLP of complex PV systems with multiple active degradation mechanisms. The study protocol is the experimental design, including module variants and different exposure conditions, selection of evaluation methods, time-series data acquisition and training of network models to these data. We present SLP of minimodules in the lab and PV systems in the field. For lab SLP, minimodules with 8 variants based on manufacturer, architecture, and encapsulation were prepared and aged in modified damp heat with or without full spectrum light exposure. Stepwise I-V and Suns-Voc data acquisition tracks changes in electrical properties including Rs,IV, Isc,IV, Vmp,PIV providing insights into power loss of minimodules. Network structural equation modeling (netSEM) was utilized to construct degradation pathway models that identify active degradation mechanisms and predict power loss over time. For field SLP, datastreams of Pmp values and I-V curve datastreams of two types of modules installed in three distinctly different Köppen-Geiger climate zones for 9 years were acquired. With power loss modes corresponding to uniform current loss (ΔPIsc), recombination (ΔPVoc), series resistance (ΔPRs), and current mismatch (ΔPImis) determined, the performance loss rates (PLR) were determined using PVplr. We show how to establish a study protocol framework to ensure appropriate parametric variations and valid data collection from the variants of your complex systems. Then the data-driven netSEM model fitting provides a comprehensive mapping of multiple active degradation mechanisms, and accurate service life prediction.

network model, degradation, photovoltaic, solar↗

Field studies of PERC and Al-BSF PV module performance loss using power and I-V timeseries

We have studied the degradation of both full-sized modules and minimodules with PERC and Al-BSF cell variations in fields while considering packaging strategies. We demonstrate the implementations of data-driven tools to analyze large numbers of modules and volumes of timeseries data to obtain the performance loss and degradation pathways. This data analysis pipeline enables quantitative comparison and ranking of module variations, as well as mapping and deeper understanding of degradation mechanisms. The best performing module is a half-cell PERC, which shows a performance loss rate ( PLR ) of −0.27 ± 0.12% per annum (%/ a ) after initial losses have stabilized. Minimodule studies showed inconsistent performance rankings due to significant power loss contributions via series resistance, however, recombination losses remained stable. Overall, PERC cell variations outperform or are not distinguishable from Al-BSF cell variations.

Curran, Alan J.↗

Optimized silicon solar cells for space exploration power systems

A program is described aimed at designing and fabricating improved silicon solar cells for a range of missions extending from 0.1 to 15 astronomical units (Mercury to Jupiter). For missions lying inside Earth radius (Mercury, Venus) the major cell property required was very low series resistance, allowing high curve fill factor to be maintained at the higher intensities. For the Mercury mission, the temperature of the cell had to be kept low. This was achieved by reflecting more of the incident sunlight by use of large area front contacts. For the outer missions (Mars, the Asteroid belts and Jupiter) the formation of a Schottky barrier at the back contact had to be avoided (by use of a P+ layer under the back contact) and the excess leakage current of the PN junction had to be reduced. Optimum grid patterns were also derived and used for these missions.

Iles, P. A.↗

Research and development of silicon solar cells for low solar intensity and low temperature applications

Problems were identified, using N/P solar cells at low temperature and low intensity; these problems were solved and the solutions incorporated in a manufacturing procedure. Theoretical analysis of the effects of low temperature and low intensity on the various solar cell characteristics indicated that the following behavior might be expected: (1) lower short circuit current,(2) higher open circuit voltage,(3) series resistance becoming less significant, and (4) shunt resistance becoming more critical.

Payne, P. A.↗

Design and fabrication of wraparound contact silicon solar cells

Both dielectric insulation and etched junction contact techniques were evaluated for use in wraparound contact cell fabrication. Since a suitable process for depositing the dielectrics was not achieved, the latter approach was taken. The relationship between loss of back contact and power degradation due to increased series resistance was established and used to design a simple contact configuration for 10 ohm-cm etched wraparound junction contact N/P cells. A slightly deeper junction significantly improved cell curve shape and the associated loss of current was regained by using thinner contact grid fingers. One thousand cells with efficiencies greater than 10.5% were fabricated to demonstrate the process.

Scott-Monck, J. A.↗

Solar cell dark I-V characteristics and their applications.

This paper presents the preliminary results of studies conducted to evaluate the feasibility of and to generate techniques for the use of dark forward current-voltage characteristics in the checkout of the Apollo Telescope Mount Solar Array. Methods for the determination of lumped series resistance and prediction of the illuminated I-V curve using the dark characteristics are also presented. The paper addresses itself primarily to the generation of a valid performance testing and flight readiness checkout technique using the forward characteristics of the solar cell.

Imamura, M. S.↗