SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
The application of variable angle spectroscopic ellipsometry to the study of diffusion of atomic oxygen through SiO2 is presented. Data are found to be well fit to the universal growth parabola, and the diffusion coefficient is estimated to be 0.00001 sq cm/min.
Variable angle spectroscopic ellipsometry (VASE) was applied to cubic SiC. This technique gives absolute values of the refractive index (n) and the extinction coefficient (k) of a substrate and/or a thin film of unknown material. The samples were grown by chemical vapor deposition (CVD) on p-type silicon. The substrate was aligned either on the (001) axis or 1 degree of (001). Several growth temperatures and growth durations were used. The samples were divided into two groups: (1) thick films of order 10 microns grown near optimal conditions of temperature, flow, and gas ratio; and (2) thin films of order 100 A grown at various temperatures. The ellipsometric results for samples in group 1 were analyzed using a two-phase model (substrate and ambient). Results show that for wavelengths in the visible, the refractive index of these CVD samples is equal to that reported for single crystal cubic SiC, within the experimental error, which is on the order of 1 percent. However, the extinction coefficient has a relatively large value, even above the band gap. The absorption is sample dependent and has a broad peak in the visible. The results for samples in group 2 were analyzed using a three-phase model (substrate, film, and ambient). The dielectric functions of the film, deducted from the measured n and k, were further analyzed using the effective medium approximation. The results show that the films contain 30 to 40 vol. percent amorphous silicon, i.e., silicon with only short-range order.
In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements.
There is strong interest in being able to accurately and sensitively monitor materials degradation in both ground-based and space-based environments. Two optical techniques for sensitive degradation monitoring are reviewed: spectroscopic ellipsometry and photothermal spectroscopy. These techniques complement each other in that ellipsometry is sensitive to atomically thin surface and subsurface changes, and photothermal spectroscopy is sensitive to local defects, pin-holes, subsurface defects, and delamination. Progress in applying these spectroscopies (both ex situ and in situ) to atomic oxygen degradation of space materials is reviewed.
Exposed and unexposed (shielded) portions of the surfaces of six different metal samples (Al, Cu, Ni, Ta, W, and Zr) that had been mounted on LDEF were studied by variable angle spectroscopic ellipsometry. The change in the optical constants of the metals caused by exposure to the space environment was measured. The measured optical constants reflect changes in the morphology and stoichiometry of a surface layer to a depth of this order of magnitude. For all the samples examined in this manner the exposed and unexposed portions exhibited dramatically different optical properties. In order to determine whether the observed changes were caused by the impact of oxygen atoms encountered in flight an experiment was set up in which samples identical to the original metal samples are exposed to a low-energy oxygen plasma in a microwave discharge chamber. Results of this experiment are reported, as well as an analysis of the observed data in terms of surface layers of different composition.
The fundamentals of variable angle spectroscopic ellipsometry (VASE) are reviewed, and its usefulness in studying the effect of atomic oxygen on space coatings such as indium tin oxide (ITO), silicon dioxide, and aluminum oxide is discussed. Monolayer sensitive and nondestructive VASE is found to be an effective technique for monitoring the atomic oxygen diffusion through the aluminum oxide and silicon dioxide protective overcoatings on space reflectors. Ashing of ITO/silicon samples had the net effect of annealing the film inside the plasma. The annealing effect was supported both by structural changes as verified by X-ray diffraction measurements and by increased absorbance in the spectral range below 3 eV as measured by VASE.
The effect of temperature on the optical properties of GaAs was investigated using spectroscopic ellipsometry measurements, between room temperature and about 610 C in increments of 50 C, of pseudodielectric functions and related optical constants of GaAs. A quantitative analysis of the pseudodielectric function spectrum was carried out using a harmonic-oscillator approximation (HOA) to fit the measured dielectric functions. Good fits were obtained with this model, which provides a convenient means of reproducing the GaAs dielectric function at any temperature, by using the temperature-dependent oscillator parameters. The HOA analysis also provides information about band-gap variation with temperature. Using the measured optical constants at a number of fixed temperatures, an algorithm was developed for computing the dielectric function spectrum at an arbitrary temperature in the range 22-610 C.
Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.
The optical constants of samples of six different metals (Al, Cu, Ni, Ta, W, and Zr) exposed to space on the Long Duration Exposure Facility (LDEF) were studied by variable angle spectroscopic ellipsometry. Measurements were also carried out on portions of each sample which were shielded from direct exposure by a metal bar. A least-squares fit of the data using an effective medium approximation was then carried out, with thickness and composition of surface films formed on the metal substrates as variable parameters. The analysis revealed that exposed portions of the Cu, Ni, Ta, and Zr samples are covered with porous oxide films ranging in thickness from 500 to 1000 A. The 410 A thick film of Al2O3 on the exposed Al sample is practically free of voids. Except for Cu, the shielded portions of these metals are covered by thin non-porous oxide films characteristic of exposure to air. The shielded part of the Cu sample has a much thicker porous coating of Cu2O. The tungsten data could not be analyzed.
Oxygen plasma ashers and an electron cyclotron resonance (ECR) sources are currently being used for low Earth orbit (LEO) simulation. The suitability of each of these simulation techniques is considered. Thin film coatings are characterized by optical techniques, including variable-angle spectroscopic ellipsometry, optical spectrophotometry, and laser light scatterometry. Atomic force microscopy (AFM) has been used to characterize the surface morphology of thin aluminum films as a function of substrate temperature during deposition. Results on diamondlike carbon (DLC) films show that DLC degrades with simulated atomic oxygen (AO) exposure at a rate comparable to Kapton polyimide. Since DLC is not as susceptible as Kapton to environmental factors such as moisture absorption, it could potentially provide more accurate measurements of AO fluence on short space flights.
The dielectric function of a thick layer of In(0.52)Al(0.48)As lattice matched to InP was measured by variable angle spectroscopic ellipsometry in the range 1.9-4.1 eV. The In(0.52)Al(0.48)As was protected from oxidation using a thin In(0.53)Ga(0.47)As cap that was mathematically removed for the dielectric function estimate. The In(0.52)Al(0.48)As dielectric function was then verified by ellipsometric measurements of other In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As structures, including (MODFET), and is shown to provide accurate structure layer thicknesses.
This paper presents kinetic data from oxidation studies of the polar faces for 3C and 6H SiC in wet and dry oxidizing ambients. Values for the linear and parabolic rate constants were obtained, as well as preliminary results for the activation energies of the rate constants. Examples are presented describing how thermal oxidation can be used to map polytypes and characterize defects in epitaxial layers grown on low tilt angle 6H SiC substrates. Interface widths were measured using Auger electron spectroscopy (AES) with Ar ion beam depth profiling and variable angle spectroscopic ellipsometry (VASE) with effective medium approximation (EMA) models. Preliminary electrical measurements of MOS capacitors are also presented.
Spectroscopic ellipsometry (SE) was employed to characterize Si/Si(1-x)Ge(x) strained-layer superlattices. An algorithm was developed, using the available optical constants measured at a number of fixed x values of Ge composition, to compute the dielectric function spectrum of Si(1-x)Ge(x) at an arbitrary x value in the spectral range 17 to 5.6 eV. The ellipsometrically determined superlattice thicknesses and alloy compositional fractions were in excellent agreement with results from high-resolution x ray diffraction studies. The silicon surfaces of the superlattices were subjected to a 9:1 HF cleaning prior to the SE measurements. The HF solution removed silicon oxides on the semiconductor surface, and terminated the Si surface with hydrogen-silicon bonds, which were monitored over a period of several weeks, after the HF cleaning, by SE measurements. An equivalent dielectric layer model was established to describe the hydrogen-terminated Si surface layer. The passivated Si surface remained unchanged for greater than 2 h, and very little surface oxidation took place even over 3 to 4 days.
This paper presents the results from our on-going program to investigate the optical properties of liquid metals and alloys at elevated temperatures. Ellipsometric and polarimetric techniques have been used to investigate the optical properties of materials in the 1000 - 3000 K temperature range and in the 0.3 - 0.1 mu m wavelength range. The ellipsometric and polarimetric techniques are described and the characteristics of the instruments are presented. The measurements are conducted by reflecting a polarized laser beam from an electromagnetically levitated liquid metal or alloy specimen. A Rotating Analyzer Ellipsometer (RAE) or a four-detector Division-of-Amplitude Photopolarimeter (DOAP) is used to determine the polarimetric properties of the light reflected at an angle of incidence of approximately 68 deg. Optical properties of the specimen which are calculated from these measurements include the index of refraction, extinction coefficient, normal spectral emissivity, and spectral hemispherical emissivity. These properties have been determined at various wavelengths and temperatures for liquid Ag, Al, Au, Cu, Nb, Ni, Pd, Pt, Si, Ti, Ti-Al alloys, U, and Zr. We also describe new experiments using pulsed-dye laser spectroscopic ellipsometry for studies of the wavelength dependence of the emissivities and optical properties of materials at high temperature. Preliminary results are given for liquid Al. The application of four-detector polarimetry for rapid determination of surface emissivity and true temperature is also described. Characteristics of these devices are presented. An example of the accuracy of this instrument in measurements of the melting point of zirconium is illustrated.
The research activity for this first year has focussed on three distinct activities: (1) the use of an integrating sphere to improve upon the gathering of spectral data from a variety of surfaces; (2) the use of optical fiber spectrometry to determine levels of contamination from tape residues on critical bonding surfaces; and (3) an exploratory activity in the use of spectroscopic ellipsometry for the analysis of thin films of contaminants on critical surfaces has also begun.
Using variable angle spectroscopic ellipsometry and atomic force microscopy (AFM), the surface roughness and oxidation of aluminum and titanium thin films have been studied as a function of substrate deposition temperature and oxygen plasma exposure. Increasing substrate deposition temperatures affect film microstructure by greatly increasing grain size. Short exposures to an oxygen plasma environment produce sharp spikes rising rapidly above the surface as seen by AFM. Ellipsometric measurements were made over a wide range of plasma exposure times, and results at longer exposure times suggest that the surface is greater than 30% void. This is qualitatively verified by the AFM images.
Evaluating the performance of materials on the exterior of spacecraft is of continuing interest, particularly in anticipation of those applications that will require a long duration in low Earth orbit. The Passive Optical Sample Assembly (POSA) experiment flown on the exterior of Mir as a risk mitigation experiment for the International Space Station was designed to better understand the interaction of materials with the low Earth orbit environment and to better understand the potential contamination threats that may be present in the vicinity of spacecraft. Deterioration in the optical performance of candidate space power materials due to the low Earth orbit environment, the contamination environment, or both, must be evaluated in order to propose measures to mitigate such deterioration. The thirty two samples of space power materials studied here include solar array blanket materials such as polyimide Kapton H and SiO(x) coated polyimide Kapton H, front surface aluminized sapphire, solar dynamic concentrator materials such as silver on spin coated polyimide and aluminum on spin coated polyimide, CV 1144 silicone, and the thermal control paint Z-93-P. The physical and optical properties that were evaluated prior to and after the POSA flight include mass, total, diffuse, and specular reflectance, solar absorptance, and infrared emittance. Additional post flight evaluation included scanning electron microscopy to observe surface features caused by the low Earth orbit environment and the contamination environment, and variable angle spectroscopic ellipsometry to identify contaminant type and thickness. This paper summarizes the results of pre- and post-flight measurements, identifies the mechanisms responsible for optical properties deterioration, and suggests improvements for the durability of materials in future missions.
Inspection of the interior of the Genesis science canister after recovery in Utah, and subsequently at JSC, revealed a darkening on the aluminum canister shield and other canister components. There has been no such observation of film contamination on the collector surfaces, and preliminary spectroscopic ellipsometry measurements support the theory that the films observed on the anodized aluminum components do not appear on the collectors to any significant extent. The Genesis Science Team has made an effort to characterize the thickness and composition of the brown stain and to determine if it is associated with molecular outgassing.Detailed examination of the surfaces within the Genesis science canister reveals that the brown contamination is observed to varying degrees, but only on surfaces exposed in space to the Sun and solar wind hydrogen. In addition, the materials affected are primarily composed of anodized aluminum. A sharp line separating the sun and shaded portion of the thermal closeout panel is shown. This piece was removed from a location near the gold foil collector within the canister. Future plans include a reassembly of the canister components to look for large-scale patterns of contamination within the canister to aid in revealing the root cause.