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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Fast X-ray Nanotomography with Sub-10 nm Resolution as a Powerful Imaging Tool for Nanotechnology and Energy Storage Applications

In the last decade, transmission X-ray microscopes (TXMs) have come into operation in most of the synchrotrons worldwide. They have proven to be outstanding tools for non-invasive ex and in situ 3D characterization of materials at the nanoscale across varying range of scientific applications. However, their spatial resolution has not improved in many years, while newly developed functional materials and microdevices with enhanced performances exhibit nanostructures always finer. Here, optomechanical breakthroughs leading to fast 3D tomographic acquisitions (85 min) with sub-10 nm spatial resolution, narrowing the gap between X-ray and electron microscopy, are reported. These new achievements are first validated with 3D characterizations of nanolithography objects corresponding to ultrahigh-aspect-ratio hard X-ray zone plates. Then, this powerful technique is used to investigate the morphology and conformality of nanometer-thick film electrodes synthesized by atomic layer deposition and magnetron sputtering deposition methods on 3D silicon scaffolds for electrochemical energy storage applications.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Ion beam texturing

A microscopic surface texture was created by sputter-etching a surface while simultaneously sputter-depositing a lower sputter yield material onto the surface. A xenon ion-beam source was used to perform the texturing process on samples as large as 3-cm diameter. Textured surfaces have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, stainless steel, Au, and Ag. A number of texturing parameters are studied including the variation of texture with ion-beam powder, surface temperature, and the rate of texture growth with sputter etching time.

Hudson, W. R.↗
NASA NTRS2015

Achieving Zero Stress in Iridium, Chromium, and Nickel Thin Films

We examine a method for achieving zero intrinsic stress in thin films of iridium, chromium, and nickel deposited by magnetron sputter deposition. The examination of the stress in these materials is motivated by efforts to advance the optical performance of light-weight x-ray space telescopes into the regime of sub-arc second resolution that rely on control of the film stress to values within 10-100 MPa. A characteristic feature of the intrinsic stress behavior in chromium and nickel is their sensitivity to the magnitude and sign of the intrinsic stress with argon gas pressure, including the existence of a critical pressure that results in zero film stress. This critical pressure scales linearly with the film's density. While the effect of stress reversal with argon pressure has been previously reported by Hoffman and others for nickel and chromium, we have discovered a similar behavior for iridium. Additionally, we have identified zero stress in iridium shortly after island coalescence. This feature of film growth is used for achieving a total internal stress of -2.89 MPa for a 15.8 nm thick iridium film. The surface roughness of this low-stress film was examined using scanning probe microscopy (SPM) and x-ray reflectivity (XRR) at CuKα and these results presented and discussed.

X-ray↗
NASA NTRS1987

ITO/InP solar cells: A comparison of devices fabricated by ion beam and RF sputtering of the ITO

This work was performed with the view of elucidating the behavior of indium tin oxide/indium phosphide (ITO/InP) solar cells prepared by RF and ion beam sputtering. It was found that using RF sputter deposition of the ITO always leads to more efficient devices than ion beam sputter deposition. An important aspect of the former technique is the exposure of the single crystal p-InP substrates to a very low plasma power prior to deposition. Substrates treated in this manner have also been used for ion beam deposition of ITO. In this case the cells behave very similarly to the RF deposited cells, thus suggesting that the lower power plasma exposure (LPPE) is the crucial process step.

Coutts, T. J.↗
NASA NTRS1993

Flexible storage medium for write-once optical tape

A write-once data storage media was developed which is suitable for optical tape applications. The media is manufactured using a continuous film process to deposit a ternary alloy of tin, bismuth, and copper. This laser sensitive layer is sputter deposited onto commercial plastic web as a single-layer thin film. A second layer is sequentially deposited on top of the alloy to enhance the media performance and act as an abrasion resistant hard overcoat. The media was observed to have laser write sensitivities of less than 2.0 njoules/bit, carrier-to-noise levels of greater than 50dB's, modulation depths of approximately 100 percent, read-margins of greater than 35, uniform grain sizes of less than 200 Angstroms, and a media lifetime that exceeds 10 years. Prototype tape media was produced for use in the CREO drive system. The active and overcoat materials are first sputter deposited onto three mil PET film in a single pass through the vacuum coating system, and then converted down into multiple reels of 35mm x 880m tape. One mil PET film was also coated in this manner and then slit and packaged into 3480 tape cartridges.

Strandjord, Andrew J. G.↗
DOE OSTI2026

Durable Thin‐Film Porous Transport Electrodes for High Current Density PEM Water Electrolysis

Proton exchange membrane water electrolyzers rely on relatively expensive Ir-based catalysts for efficient and durable hydrogen production. To reduce system costs, Ir loadings can be reduced if performance and durability are maintained. Sputter deposition is a readily scalable method to synthesize uniform, low-loading catalyst layers with controlled composition. A catalyst applied directly to the porous transport layer can have advantages for performance, manufacturing simplicity, and catalyst recovery. Suitable porous transport layer porosity can minimize activity losses when reducing loadings. Here, methods are presented to deposit metallic Ir as well as amorphous and rutile Ir oxides. The activity and durability of these materials in the porous transport electrode architecture is evaluated. The metallic and amorphous forms have better initial activity, however, operation at 3 A cm −2 with 0.1 mg Ir cm −2 shows that only rutile IrO 2 maintains performance beyond 100 h with a 50 mV improvement after 700 h. A >10x reduced dissolution rate is shown for rutile IrO 2 . With a low-porosity transport layer and 0.4 mg Ir cm −2 , a steady-state voltage decay rate of 6 µV h −1 is achieved. The results demonstrate that sputter-deposited rutile IrO 2 porous transport electrodes with low Ir loading can be operated at high current density to reduce hydrogen production costs.

08 HYDROGEN↗
NASA NTRS1976

Nonpropulsive applications of ion beams

Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied: sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source was used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing was tried with many materials and has a multitude of potential applications.

Hudson, W. R.↗
NASA NTRS1976

Nonpropulsive applications of ion beams

This paper describes the results of an investigation of the nonpropulsive applications of electric propulsion technology. Eight centimeter ion beam sources utilizing xenon and argon have been developed that operate over a wide range of beam energies and currents. Three types of processes have been studied - sputter deposition, ion beam machining, and ion beam surface texturing. The broad range of source operating conditions allows optimum sputter deposition of various materials. An ion beam source has also been used to ion mill laser reflection holograms using photoresist patterns on silicon. Ion beam texturing has been tried with many materials and has a multitude of potential applications.

Hudson, W. R.↗
NASA NTRS1989

Static and dynamic oxidation of Ti-14Al-21Nb and coatings

The oxidation of Ti-14Al-21Nb (wt pct) was studied under static conditions at 649 to 1093 C for as long as 120 hr, and under simulated hypersonic flight (dynamic oxidation) conditions at 982 C for as many as 16 half-hour cycles. Under simulated hypersonic flight conditions heavy oxidation and spalling of the oxide was observed. It was concluded that titanium aluminides used in hypersonic applications must have oxidation-protective coatings. In this preliminary study coatings about 1 micron thick were applied by sputter deposition, from solutions, and from sol-gels. It was found that, because of cracks and porosity, the sputter-deposited coatings did not have sufficient film integrity to shield the alloy. Some of the coatings applied from sol-gels demonstrated film integrity in 1 hr exposures at 982 C.

Wiedemann, K. E.↗
NASA NTRS2002

Solar Selective Coatings Developed for Space Power Applications

A solar collector having the combined properties of high solar absorptance, low infrared emittance, and high thermal conductivity is envisioned for space power applications on minisatellites. A high solar absorptance is needed to collect as much of the incident solar radiation as possible and a low infrared emittance is needed to minimize radiant energy losses. A lightweight material having a high thermal conductivity is needed to transport the absorbed energy to where it is needed. Such a solar collector may be used with a low temperature-differential heat engine to provide electric power to the minisatellite components or as a source of thermal energy for a thermal bus that would heat remote regions of the spacecraft. The key to such a collector is the use of cermet coatings. Cermet coatings are composed of molecular islands of metal embedded in a three-dimensional matrix of dielectric. Recent research on molecular mixtures of aluminum and aluminum oxide at the NASA Glenn Research Center has yielded cermet coatings with a solar absorptance a of 0.797 and an infrared emittance epsilon of 0.131, yielding an alpha/epsilon ratio of 6. Although additional work is needed to further increase the alpha/epsilon ratio, these coatings are attractive owing to their potential durability in the space environment. The aluminum oxide surface should provide substantial protection from the atomic oxygen found in low Earth orbit. To help minimize emittance, these coatings are deposited on a smooth surface. The selected surface is aluminum that has been diamond turned to a mirror finish. Cermet coatings are manufactured by sputter deposition. To achieve the desired variable composition, Glenn's researchers implemented a novel approach using a cylindrical target composed of aluminum and aluminum oxide. Rotating the cylinder during the deposition process yields a coating of variable composition. A photograph of the custom-made aluminum and aluminum oxide cylindrical target installed in the sputter deposition chamber is shown.

Jaworske, Donald A.↗
NASA NTRS1972

Sputtering - A vacuum deposition method for coating material.

The sputtering method is discussed in terms of the unique features which sputter offers in depositing coatings. These features include versatility, momentum transfer, configuration of target, precise controls, and a relatively slow deposition rate. Sputtered films are evaluated in terms of adherence, coherence, and the internal stresses. The observed strong adherence is attributed to the high kinetic energies of the sputtered material, sputter etched surface, and the submicroscopic particle size. Film thickness can be controlled to a millionth of a centimeter. Very adherent films of sputtered PTFE (teflon) can be deposited in a single operation on any type of material and on any geometrical configuration.

Spalvins, T.↗
DOE OSTI2023

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
DOE OSTI2024

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
DOE OSTI2020

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer (140) comprising a first sputter-deposited transparent conducting oxide; an electron transport layer (130) interfacing with the first contact layer; a second contact layer (110) comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer (120) having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
NASA NTRS2004

Post-Test Analysis of the Deep Space One Spare Flight Thruster Ion Optics

The Deep Space 1 (DSl) spare flight thruster (FT2) was operated for 30,352 hours during the extended life test (ELT). The test was performed to validate the service life of the thruster, study known and identify unknown life limiting modes. Several of the known life limiting modes involve the ion optics system. These include loss of structural integrity for either the screen grid or accelerator grid due to sputter erosion from energetic ions striking the grid, sputter erosion enlargement of the accelerator grid apertures to the point where the accelerator grid power supply can no longer prevent electron backstreaming, unclearable shorting between the grids causes by flakes of sputtered material, and rouge hole formation due to flakes of material defocusing the ion beam. Grid gap decrease, which increases the probability of electron backstreaming and of arcing between the grids, was identified as an additional life limiting mechanism after the test. A combination of accelerator grid aperture enlargement and grid gap decrease resulted in the inability to prevent electron backstreaming at full power at 26,000 hours of the ELT. Through pits had eroded through the accelerator grid webbing and grooves had penetrated through 45% of the grid thickness in the center of the grid. The upstream surface of the screen grid eroded in a chamfered pattern around the holes in the central portion of the grid. Sputter deposited material, from the accelerator grid, adhered to the downstream surface of the screen grid and did not spall to form flakes. Although a small amount of sputter deposited material protruded into the screen grid apertures, no rouge holes were found after the ELT.

NASA Solar electric propulsion Technology Applicat↗
DOE OSTI2026

Sputter coating of Nb₃Sn into SRF cavity using stoichiometric target

Nb₃Sn has emerged as a leading alternative material due to its higher superconducting critical temperature (Tc) and superheating field (Hsh), promising a viable solution to the intrinsic performance limit currently faced by Nb superconducting radiofrequency (SRF) cavities. We sputter-coated Nb₃Sn inside Nb SRF cavity using a stoichiometric Nb₃Sn tube target in a DC cylindrical magnetron sputter coater. The target was fabricated by growing an estimated >20 μm thick Nb₃Sn layer on a Nb tube via Sn vapor diffusion using Jefferson Lab’s coating system. Approximately 150 nm thick Nb-Sn films were sputter-deposited onto flat Nb samples at positions representing the beam tubes and equator of a 2.6 GHz Nb cavity. Post-deposition annealing at 950 °C for 3 h resulted in the formation of Nb₃Sn. Microstructural analysis of the annealed films was carried out to investigate the morphology and structure of the Nb₃Sn films. Later, a 2.6 GHz Nb SRF cavity was coated with a ~1.2 μm thick sputtered Nb-Sn film using a stoichiometric Nb₃Sn target, followed by annealing. Cryogenic RF testing of the annealed cavity demonstrated a Tc of 17.8 K, indicating the formation of Nb₃Sn. After a light Sn recoating treatment, the cavity achieved a quality factor (Q0) of 6.7E+08 at lower field at 2.0 K.

Accelerator Physics↗