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The feasibility of a reactively sputtered thin film CdS - Cu2S solar cell is proven. Identification of the reactively sputtered Cu2S film is made by X-ray diffractometer and spectro-transmission measurements. Because of its simplicity, economical use of material, and high yield, the reactive sputtering process promises to be a low cost method for producing CdS - Cu2S solar cells.
The potential industrial applications of sputtering and ion plating are strictly governed by the unique features these methods possess. The outstanding features of each method, the resultant coating characteristics and the various sputtering modes and configurations are discussed. New, more complex coatings and deposits can be developed such as graded composition structures (metal-ceramic seals), laminated and dispersion strengthened composites which improve the mechanical properties and high temperature stability. Specific industrial areas where future effort of sputtering and ion plating will concentrate to develop intricate alloy or compound coatings and solve difficult problem areas are discussed.
Radiofrequency sputtered coatings of CRB2, MOSI2, and MOS2 were examined by X-ray photoelectron spectroscopy. The effects of sputtering target history, deposition time, RF power level, and substrate bias on film composition were studied. Friction tests were run on RF sputtered surfaces of 440-C steel to correlate XPS data with lubricating properties. Significant deviations from stoichiometry and high oxide levels for all three compounds were related to target outgassing. The effect of biasing on these two factors depended on the compound. Improved stoichiometry correlated well with good friction and wear properties.
High-velocity (at least 100 km/s) shock fronts are found to provide an environment where grains can be destroyed by thermal sputtering. Application is made to supernova remnants. Sputtering of refractory grains in shocks associated with high-velocity clouds leads to cosmic abundances of heavy elements and if followed by deceleration of the high-velocity gas and dilution with ambient depleted matter. A correlation of depletion with systematic velocity is predicted. It is proposed that there is a residual underlying depletion associated with refractory grain formation and a subsequent trapping of gas-phase metallic species by adsorption. Sputtering of adsorbed monolayers in intermediate-velocity shocks (not exceeding 50 km/s) can account for a range of depletions in diffuse interstellar matter.
Sputter deposited aluminum containing argon was melted to produce foam, both in the earth's gravitational field and in a zero-gravity space environment. Experiments leading to trapping of up to 270 ppm argon sputtering gas in pure aluminum during high-rate dc triode sputter deposition are discussed. Conduct of the melting experiments and design of the furnace used are described. Metallography; an analysis of bubble size, distribution, and morphology; and a preliminary description of the kinetics are also presented.
The potential industrial applications of sputtering and ion plating are strictly governed by the unique features these methods possess. The outstanding features of each method, the resultant coating characteristics and the various sputtering modes and configurations are discussed. New, more complex coatings and deposits can be developed such as graded composition structures (metal-ceramic seals), laminated and dispersion strengthened composites which improve the mechanical properties and high temperature stability. Specific industrial areas where future effort of sputtering and ion plating will concentrate to develop intricate alloy or compound coatings and solve difficult problem areas are discussed.
An investigation is conducted concerning the mass-fractionation effects produced in connection with the bombardment of the moon by the solar wind. Most of the material ejected by sputtering escapes the moon's gravity, but some returning matter settles back onto the lunar surface. This material, which is somewhat richer in heavier atoms than the starting surface, is incorporated into the heavily radiation-damaged outer surfaces of grains. The investigation indicates that sputtering of the lunar surface by the solar wind will give rise to significant surface heavy atom enrichments if the grain surfaces are allowed to come into sputtering equilibrium.
Ion beam sputter processing rates as well as pertinent characteristics of etched targets and films are described. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Sputter target and film characteristics documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs are included.
Sputtered Cr3C2, Cr3Si2, and MoSi2 wear-resistant films (0.05 to 3.5 microns thick) were deposited on metal and glass surfaces. Electron transmission, electron diffraction, and scanning electron microscopy were used to determine the microstructural appearance. Strong adherence was obtained with these sputtered films. Internal stresses and defect crystallographic growth structures of various configurations within the film have progressively more undesirable effects for film thicknesses greater than 1.5 microns. Sliding contact and rolling-element bearing tests were also performed with these sputtered films.
The role of solar-wind sputtering in causing atmospheric mass loss from Mars is discussed. The atmospheric mass loss is studied by analogy to models of sputtering of solid surfaces and by use of empirical data for the lunar surface. Results show that Martian atmospheric mass loss, when integrated over the course of 4 times 10 to the ninth power years, amounts to 3.1 times 10 to the 41st power CO2 molecules. Preferential loss of light elements and isotopes by sputtering is also considered.
The sputtering of the lunar surface by the solar wind is examined as a possible mechanism of mass fractionation. Two distinct contributions to this mechanism are considered: (1) the tendency for a greater fraction of the heavier sputtered atoms to fall back to the surface under lunar gravity; and (2) mass-dependent kinetic effects that arise in the sputtering process itself. Calculations predict that delta (O-18) is approximately 5.6% while delta (Si-30) is about 3.6% and that oxygen is depleted in the outer regions of grains relative to the bulk composition. The results are in reasonable agreement with experiment, and one must conclude that mass fractionation by solar wind is an important phenomenon on the lunar surface.
A thorough study of the role which foreign atoms play in cone formation during sputtering of metals revealed many experimental facts. Two types of cone formation were distinquished, deposit cones and seed cones. Twenty-six combinations of metals for seed cone formation were tested. The sputtering yield variations with composition for combinations which form seed cones were measured. It was demonstrated that whisker growth becomes a common occurrence when low melting point material is sputter deposited on a hot nonsputtered high melting point electrode.
The sputtering and ion plating technology is reviewed in terms of their potential, uses and performance. It offers the greatest flexibility in coating preparation, since coatings can be tailored in any preferred chemical combination, and graded type interfaces (ceramic to metal seals) can be formed. Sputtered and ion plated film characteristics such as the degree of adherence, coherence and morphological growth which contribute to film performance and reliability are described and illustrated as used in practice. It is concluded that the potential future of sputtered and ion plated films for industrial applications will depend primarily upon greater comprehension of materials selection, possible elimination of restrictions for coating/substrate combinations and the awareness of utilizing the proper deposition parameters.
The general operation of a discharge chamber for the production of ions is described. A model is presented for the magnetic containment of both primary and secondary or Maxwellian electrons in the discharge plasma. Cross sections were calculated for energy and momentum transfer in binary collisions between like pairs of Ar, Kr, and Xe atoms in the energy range from about 1 eV to 1000 eV. These calculations were made from available pair interaction potentials using a classical model. Experimental data from the literature were fit to a theoretical expression for the Ar resonance charge exchange cross section over the same energy range. A model was developed that describes the processes of conical texturing of a surface due to simultaneous directed ion beam etching and sputter deposition of an impurity material. This model accurately predicts both a minimum temperature for texturing to take place and the variation of cone density with temperature. It also provides the correct order of magnitude of cone separation. It was predicted from the model, and subsequently verified experimentally, that a high sputter yield material could serve as a seed for coning of a lower sputter yield substrate. Seeding geometries and seed deposition rates were studied to obtain an important input to the theoretical texturing model.
The 0.152 cm thick sputtered and copper deposits were electron beam welded to wrought copper. Tensile specimens were machined from the weld assemblies and tested at room temperature. Tensile strength approached the strength of wrought material. Elongations up to 25% were measured. Sputtered aluminum was used to fill 0.157 cm wide by 0.127 cm deep grooves in thrust chamber spool piece liners. The liners were closed out by sputtering copper from post and hollow cathodes.
Etching and deposition of fluoropolymers are of considerable industrial interest for applications dealing with adhesion, chemical inertness, hydrophobicity, and dielectric properties. This paper describes ion beam sputter processing rates as well as pertinent characteristics of etched targets and films. An argon ion beam source was used to sputter etch and deposit the fluoropolymers PTFE, FEP, and CTFE. Ion beam energy, current density, and target temperature were varied to examine effects on etch and deposition rates. The ion etched fluoropolymers yield cone or spire-like surface structures which vary depending upon the type of polymer, ion beam power density, etch time, and target temperature. Also presented are sputter target and film characteristics which were documented by spectral transmittance measurements, X-ray diffraction, ESCA, and SEM photomicrographs.
The sputtering and ion plating technology is reviewed in terms of potential, uses, and performance. Sputtering is not regulated by classical thermodynamics and Gibb's phase rule relationships, thus eliminating the restrictions for materials combinations, and consequently making possible tailoring of coatings in any preferred chemical combination. The future of sputtered and ion plated films for industrial applications is expected to depend primarily on greater comprehension of materials selection, and the utilization of the proper deposition parameters.
Silicon, oxygen, sulfur and, possibly, potassium show systematic enrichment of heavier isotopes with increasing soil maturity, probably as a result of solar-wind sputtering, but such a pattern is not exhibited by solar wind-implanted species. Apparently sputter-erosion is not penetrating to their implantation depth, about 200 A. This suggests that sputtering on the moon is being impeded by deposition of vapor condensate following meteoritic impact. Although neither secular variation in the isotopic composition at the source of regolith carbon, probably the solar wind, nor isotopic fractionation of carbon after implantation in the regolith can be ruled out, carbon isotope systematics currently yield no evidence in support of either process.