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At least 127 records · Page 7

Preactivated zeolite nanosheet plate-tiled membrane on porous PVDF film: Synthesis and study of proton-selective ion conduction

Preactivated MFI zeolite nanosheet plates (ZNPs) with large areas (~2.0 × 2.0 μm 2 ) and nanometer thicknesses (~60 nm) were prepared directly in liquid-dispersed state. The individual ZNP was a stack of 4-nm-thick single crystalline zeolite nanosheets (ZNs) interlinked by Si–O–Si bonds between neighboring ZN surfaces. The dispersed open-pore ZNPs allowed formulating suspensions for tiling ZNP membranes on polymer substrates without requiring post-coating activation. A pinhole-free ZNP-tiled (ZNPT) membrane has been achieved on macroporous PVDF film by a self-repairing vacuum-assisted filtration coating method. The resultant ZNPT layer was ~500 nm-thick consisting of about 7 ZNP layers with inter-ZNP width and inter-ZNP entrance porosity around 9 nm and 2%, respectively. The ZNPT-PVDF membrane exhibited high selectivity to proton transport over vanadyl ion and low resistances to proton conduction in aqueous solutions. The membrane also demonstrated to function as an efficient ion separator for the vanadium redox flow battery. The reported synthesis of preactivated ZNP suspension may overcome the major hurdle to realizing polymer-supported ZN membranes, which is the inefficiency of existing methods in obtaining readily dispersible open-pore ZNs. Finally, the ZNPT-PVDF membrane can be a more affordable and sustainable alternative to the Nafion-based ion separation membranes.

36 MATERIALS SCIENCE↗

Moiré-Assisted Strain Transfer in Vertical van der Waals Heterostructures

Strain provides a powerful method to study 2D monolayers and to tune their properties. The same approach also has great potential for van-der-Waals (vdW) heterostructures. However, we need to understand how strain can be applied to vertically stacked vdW structures, for which strain transfer from one layer to the next remains little explored. In our experiment, we fabricated vertical heterostructures consisting of transition metal dichalcogenides (TMDCs) monolayers that were deposited on a flexible substrate. These TMDC heterostructures allowed us to read out separately the strain in each monolayer by photoluminescence measurements. We find that, in TMDC heterostructures with large twist angles (>5°), strain transfer is limited. However, for aligned heterostructures with small twist angles (≤5°), near unity strain transfer efficiency is observed. Here, we correlate this finding with the moiré domains formed in the aligned heterostructures by reconstruction.

2D materials↗

Ligand‐induced CaMKIIα hub Trp403 flip, hub domain stacking, and modulation of kinase activity

Abstract γ‐Hydroxybutyric acid (GHB) analogs are small molecules that bind competitively to a specific cavity in the oligomeric CaMKIIα hub domain. Binding affects conformation and stability of the hub domain, which may explain the neuroprotective action of some of these compounds. Here, we describe molecular details of interaction of the larger‐type GHB analog 2‐(6‐(4‐chlorophenyl)imidazo[1,2‐b]pyridazine‐2‐yl)acetic acid (PIPA). Like smaller‐type analogs, PIPA binding to the CaMKIIα hub domain promoted thermal stability. PIPA additionally modulated CaMKIIα activity under sub‐maximal CaM concentrations and ultimately led to reduced substrate phosphorylation. A high‐resolution X‐ray crystal structure of a stabilized CaMKIIα (6x mutant) hub construct revealed details of the binding mode of PIPA, which involved outward placement of tryptophan 403 (Trp403), a central residue in a flexible loop close to the upper hub cavity. Small‐angle X‐ray scattering (SAXS) solution structures and mass photometry of the CaMKIIα wild‐type hub domain in the presence of PIPA revealed a high degree of ordered self‐association (stacks of CaMKIIα hub domains). This stacking neither occurred with the smaller compound 3‐hydroxycyclopent‐1‐enecarboxylic acid (HOCPCA), nor when Trp403 was replaced with leucine (W403L). Additionally, CaMKIIα W403L hub was stabilized to a larger extent by PIPA compared to CaMKIIα hub wild type, indicating that loop flexibility is important for holoenzyme stability. Thus, we propose that ligand‐induced outward placement of Trp403 by PIPA, which promotes an unforeseen mechanism of hub domain stacking, may be involved in the observed reduction in CaMKIIα kinase activity. Altogether, this sheds new light on allosteric regulation of CaMKIIα activity via the hub domain.

Biochemistry & Molecular Biology↗

Design, Fabrication, and Screening of Environmental‐Thermal Barrier Coatings Prepared by Ultrafast High‐Temperature Sintering

Abstract The demand for more efficient gas turbines relies heavily on the development of new environmental‐thermal barrier coatings (ETBCs). However, there is still uncertainty about which alloys and composites will be used for the next generation of turbine blades, as well as the most promising coating materials. Herein, an ETBCs development strategy is presented by integrating the coating design, synthesis, and screening using an ultrafast high temperature sintering (UHS) technique to accelerate coating improvements. The initial basis for composition selection is their thermal expansion mismatch with the substrate alloys; for which a temperature‐dependent coefficient of thermal expansion database is created. By combining tape casting method with the UHS technique a high‐throughput synthesis of single and multi‐layer coatings are realized with different compositions, layer stacking sequences, and layer thicknesses. To evaluate the coatings, thermal cycling tests from room temperature to 1300 °C are conducted. The approach enabled coatings on objects with complex geometries, multi‐layer ETBCs, and porosity tailoring by using staged UHS that runs with different temperatures and durations. The fast iteration strategy is more cost‐effective for the screening of ETBCs compared to conventional methods and greater throughput which can be further extended for rapid optimization of other materials systems.

Xie, Hua↗

Proximity-Induced Exchange Interaction: A New Pathway for Quantum Sensing Using Spin Centers in Hexagonal Boron Nitride

Defects in hexagonal boron nitride (hBN), a two-dimensional van der Waals material, have attracted a great deal of interest because of its potential in various quantum applications. Due to hBN’s two-dimensional nature, the spin center in hBN can be engineered in the proximity of the target material, providing advantages over its three-dimensional counterparts, such as the nitrogen-vacancy center in diamond. Here, in this work, we propose a novel quantum sensing protocol driven by exchange interaction between the spin center in hBN and the underlying magnetic substrate induced by the magnetic proximity effect. By first-principles calculation, we demonstrate that the induced exchange interaction dominates over the dipole–dipole interaction by orders of magnitude when in the proximity. The interaction remains antiferromagnetic across all stacking configurations between the spin center in hBN and the target van der Waals magnets. Additionally, we explored the scaling behavior of the exchange field as a function of the spatial separation between the spin center and the targets.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Hyperbolic enhancement of photocurrent patterns in minimally twisted bilayer graphene

Quasi-periodic moiré patterns and their effect on electronic properties of twisted bilayer graphene have been intensely studied. At small twist angle θ, due to atomic reconstruction, the moiré superlattice morphs into a network of narrow domain walls separating micron-scale AB and BA stacking regions. We use scanning probe photocurrent imaging to resolve nanoscale variations of the Seebeck coefficient occurring at these domain walls. The observed features become enhanced in a range of mid-infrared frequencies where the hexagonal boron nitride substrate is optically hyperbolic. Our results illustrate the capabilities of the nano-photocurrent technique for probing nanoscale electronic inhomogeneities in two-dimensional materials.

42 ENGINEERING↗

Interface, bulk and surface structure of heteroepitaxial altermagnetic α-MnTe films grown on GaAs(111)

Epitaxial MnTe films have recently seen a surge in research into their altermagnetic semiconducting properties. However, those properties may be extremely sensitive to structural and chemical modifications. We report a detailed investigation of the synthesis of the altermagnet α-MnTe on GaAs(111), which reveals the bulk defect structure of this material, the mechanism by which it releases strain from the underlying substrate, and the impact of oxidation on its surface. X-ray diffraction measurements show that α-MnTe layers with thicknesses spanning 45 to 640 nm acquire lattice parameters different from bulk, mostly due to thermal strain caused by the substrate rather than strain from the lattice mismatch. Through high-resolution transmission electron microscopy (TEM) measurement, we then unveil a misfit dislocation array at the interface, revealing the mechanism by which lattice strain is relaxed. TEM also reveals a stacking fault in the bulk, occurring along a glide plane parallel to the interface. The combination of TEM with polarized neutron reflectometry measurements finally reveals the impact of oxidation on the chemistry of the surface of uncapped MnTe. Furthermore, or findings highlight the subtle role of epitaxy in altering the structure of α-MnTe, providing potential opportunities to tune the altermagnetic properties of this material.

Altermagnets↗

Low temperature cofired ceramic substrates and fabrication techniques for the same

A low temperature cofired ceramic substrate comprises a plurality of dielectric layers, at least one inner conductor layer, a plurality of bond pads, and a solder mask. The dielectric layers are formed from ceramic material and placed one on top of another to form a stack. The inner conductor is formed from electrically conductive paste and positioned on an upper surface of at least one inner dielectric layer. The bond pads are positioned on an outer surface of the stack. Each bond pad is formed from a plurality of conductive sublayers of thin film metal stacked one on top of another, with each conductive sublayer being formed from a different metal. The solder mask is positioned on the same outer surface of the stack as the bond pads and includes a plurality of openings, with each opening exposing at least a portion of one of the bond pads.

42 ENGINEERING↗

Nanoscale lattice dynamics in hexagonal boron nitride moiré superlattices

Twisted two-dimensional van der Waals (vdW) heterostructures have unlocked a new means for manipulating the properties of quantum materials. The resulting mesoscopic moiré superlattices are accessible to a wide variety of scanning probes. To date, spatially-resolved techniques have prioritized electronic structure visualization, with lattice response experiments only in their infancy. Here, we therefore investigate lattice dynamics in twisted layers of hexagonal boron nitride (hBN), formed by a minute twist angle between two hBN monolayers assembled on a graphite substrate. Nano-infrared (nano-IR) spectroscopy reveals systematic variations of the in-plane optical phonon frequencies amongst the triangular domains and domain walls in the hBN moiré superlattices. Our first-principles calculations unveil a local and stacking-dependent interaction with the underlying graphite, prompting symmetry-breaking between the otherwise identical neighboring moiré domains of twisted hBN.

36 MATERIALS SCIENCE↗

Metabolic engineering of the oleaginous yeast Yarrowia lipolytica PO1f for production of erythritol from glycerol

Abstract Background Sugar alcohols are widely used as low-calorie sweeteners in the food and pharmaceutical industries. They can also be transformed into platform chemicals. Yarrowia lipolytica , an oleaginous yeast, is a promising host for producing many sugar alcohols. In this work, we tested whether heterologous expression of a recently identified sugar alcohol phosphatase (PYP) from Saccharomyces cerevisiae would increase sugar alcohol production in Y. lipolytica . Results Y. lipolytica was found natively to produce erythritol, mannitol, and arabitol during growth on glucose, fructose, mannose, and glycerol. Osmotic stress is known to increase sugar alcohol production, and was found to significantly increase erythritol production during growth on glycerol. To better understand erythritol production from glycerol, since it was the most promising sugar alcohol, we measured the expression of key genes and intracellular metabolites. Osmotic stress increased the expression of several key genes in the glycerol catabolic pathway and the pentose phosphate pathway. Analysis of intracellular metabolites revealed that amino acids, sugar alcohols, and polyamines are produced at higher levels in response to osmotic stress. Heterologous overexpression of the sugar alcohol phosphatase increased erythritol production and glycerol utilization in Y. lipolytica . We further increased erythritol production by increasing the expression of native glycerol kinase (GK), and transketolase (TKL). This strain was able to produce 27.5 ± 0.7 g/L erythritol from glycerol during batch growth and 58.8 ± 1.68 g/L erythritol during fed-batch growth in shake-flasks experiments. In addition, the glycerol utilization was increased by 2.5-fold. We were also able to demonstrate that this strain efficiently produces erythritol from crude glycerol, a major byproduct of the biodiesel production. Conclusions We demonstrated the application of a promising enzyme for increasing erythritol production in Y. lipolytica . We were further able to boost production by combining the expression of this enzyme with other approaches known to increase erythritol production in Y. lipolytica . This suggest that this new enzyme provides an orthogonal route for boosting production and can be stacked with existing designs known to increase sugar alcohol production in yeast such as Y. lipolytica . Collectively, this work establishes a new route for increasing sugar alcohol production and further develops Y. lipolytica as a promising host for erythritol production from cheap substrates such as glycerol.

09 BIOMASS FUELS↗

SPUTTERED THIN FILMS FOR VERY HIGH POWER, EFFICIENT, AND LOW-COST COMMERCIAL SOFCS

The aim of this project was to leverage the low area specific resistance (ASR) of Redox’s GDC electrolyte-based cell architecture and increase solid oxide fuel cell (SOFC) efficiency (i.e., open circuit voltage, or OCV) without significantly increasing cell resistance. The key to achieving the increased SOFC efficiency is the introduction of a thin sputtered yttria stabilized zirconia (YSZ) electron-blocking layer and a thin sputtered gadolinia doped ceria (GDC) barrier layer on top of the half-cell substrate (i.e., anode and GDC electrolyte). A key initial effort of the project was to improve the quality of the half-cell substrate surface so that any remaining defects were significantly smaller than the desired film thickness. During lab-scale trials, we had to overcome challenges with film cracking during post-sputtering treatments (e.g., thermal anneals) as well as damage to the sputtering targets. After the initial lab-scale trials, the focus shifted toward the use of commercial scale sputtering equipment with a sputtering equipment manufacturer in the microelectronics industry. Using the commercial sputtering equipment, we deposited films with different variations of power, PO2, sputtering time, platen speed, etc. We then determined the combinations of sputtering conditions and post-sputtering treatments that yielded high-quality films without cracks or other significant defects. While thin films were deposited on cells as large as 10 cm by 10 cm, the processing was optimized using 4 cm by 4 cm cells. Cell performance was evaluated in stainless-steel test fixtures between 500 °C and 700 °C with hydrogen fuel fed to the anode and air fed to the cathode. Extensive studies allowed us to determine that modified cathode and cathode contact firing processes were required to achieve theoretical OCV. Moreover, use of the new firing processes resulted in the need for a modified cathode contact to achieve a low ASR. In summary, the project demonstrated the performance of high OCV (1.13 V at 650 °C) from sputtered layers and a low ASR (~0.25 Ohms-cm2 at 650 °C) resulting from a modification of cathode/contact processing and the introduction of alternative contact layers that are sufficient to yield a Gen-1 cell with a maximum power density of approximately 1.2 W/cm2. At an operating voltage of 0.74 V, this would yield a cell power density of ~1.1 W/cm2. While not utilized in this project, a Redox Gen-2 cell has a catalyst-infiltrated porous anode that reduces the ASR by more than 50% from that of the Gen-1 cells used in this project. Therefore, if the sputtered YSZ electron-blocking layer and GDC barrier layer are added to a Gen-2 half cell with a similar increase in OCV to the theoretical value of ~1.13 V at 650 °C, and if the same improvement in ASR (from that demonstrated in this project) is achieved when using the Gen-2 half-cell architecture as a sputtered cell substrate, then the power density at 0.74 Vop could be as high as ~2.6 W/cm2. The impact of such power density gains, while still maintaining high cell efficiency, and thus high system efficiency, is a dramatic decrease in system cost because the stack represents ~30-40% of the SOFC system cost.

01 COAL, LIGNITE, AND PEAT↗

High-Quality Dry Etching of LiNbO3 Assisted by Proton Substitution through H2-Plasma Surface Treatment

The exceptional material properties of Lithium Niobate (LiNbO3) make it an excellent material platform for a wide range of RF, MEMS, phononic and photonic applications; however, nano-micro scale device concepts require high fidelity processing of LN films. Here, we reported a highly optimized processing methodology that achieves a deep etch with nearly vertical and smooth sidewalls. We demonstrated that Ti/Al/Cr stack works perfectly as a hard mask material during long plasma dry etching, where periodically pausing the etching and chemical cleaning between cycles were leveraged to avoid thermal effects and byproduct redeposition. To improve mask quality on X- and Y-cut substrates, a H2-plasma treatment was implemented to relieve surface tension by modifying the top surface atoms. Structures with etch depths as deep as 3.4 µm were obtained in our process across a range of crystallographic orientations with a smooth sidewall and perfect verticality on several crystallographic facets.

36 MATERIALS SCIENCE↗

Stabilization of magnetic bubbles in [Ni/Co]n multilayers on an oxygen-reconstructed Nb(110) surface via an ultra-thin Cu interlayer

Magnetic thin films hosting topological spin textures, such as magnetic skyrmions, hold high potential for breakthroughs in the field of spintronics, due to good scalability and energy efficiency. Novel computational architectures such as memory-in-logic devices rely on material platforms able to host those topological spin textures. Furthermore, recently proposed designs of novel quantum information technologies are based on heterostructures where topological spin textures are in direct proximity to a superconducting layer. Here, we demonstrate the stabilization of out-of-plane magnetic bubbles in highly ordered [Ni/Co]n multilayers on a Nb(110) single crystal. This is achieved without the need for the removal of the well-known Nb(110)-oxide surface reconstruction, due to the introduction of an ultra-thin Cu interlayer in between the Nb substrate and the magnetic multilayer. The Cu interlayer generates a well-ordered hexagonal surface, which is key for the epitaxial growth of the [Ni/Co]n multilayers hosting the desired out-of-plane anisotropy. The magnetic ground state of the prepared material stacks is directly imaged via spin-polarized low-energy electron microscopy, revealing the presence of magnetic bubble domains with lateral sizes as small as 450 nm.

Dibajeh, Ahmad↗

Light Confinement in Twisted Single-Layer 2D+ Moiré Photonic Crystals and Bilayer Moiré Photonic Crystals

Twisted photonic crystals are photonic analogs of twisted monolayer materials such as graphene and their optical property studies are still in their infancy. This paper reports optical properties of twisted single-layer 2D+ moiré photonic crystals where there is a weak modulation in z direction, and bilayer moiré-overlapping-moiré photonic crystals. In weak-coupling bilayer moiré-overlapping-moiré photonic crystals, the light source is less localized with an increasing twist angle, similar to the results reported by the Harvard research group in References 37 and 38 on twisted bilayer photonic crystals, although there is a gradient pattern in the former case. In a strong-coupling case, however, the light source is tightly localized in AA-stacked region in bilayer PhCs with a large twist angle. For single-layer 2D+ moiré photonic crystals, the light source in Ex polarization can be localized and forms resonance modes when the single-layer 2D+ moiré photonic crystal is integrated on a glass substrate. This study leads to a potential application of 2D+ moiré photonic crystal in future on-chip optoelectronic integration.

36 MATERIALS SCIENCE↗

Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates

The evolution of defects due to high‐pressure annealing of magnesium ion‐implanted epitaxial GaN grown on high‐quality GaN substrates is investigated. Changes in the implant‐induced strain are quantified as a function of annealing temperature and time. After annealing at 1300 °C for 10 min, the implant‐induced strain is fully relieved and accompanied by the presence of extended defects such as basal plane stacking faults and prismatic loops. Approximately one‐third of the original implant‐induced strain remains after annealing at 700 °C, and 5% of the original strain remains at 1000 °C for 100 min. In all cases, nearly all of the recovered strain occurs within first few minutes of annealing. A prominent increase in the asymmetric (104) triple axis X‐ray rocking curve full width at 0.01 maximum (FW0.01M) is observed after annealing at 1300 °C for 10 min. After annealing at 1300 °C for 100 min, a subsequent decrease in FW0.01M is correlated with a reduction of the extended defect density from 4 × 10 8 to 3 × 10 7 cm −2 , determined through transmission electron microscope (TEM) measurements. Further reduction in the density of the extended defects by optimizing annealing temperature and time is expected to improve the performance of GaN‐based vertical power devices.

Wang, Yekan↗

Direct fabrication and characterization of vertically stacked Graphene/h-BN/Graphene tunnel junctions

We have used a lithography free technique for the direct fabrication of vertically stacked two-dimensional (2D) material-based tunnel junctions and characterized by Raman, AFM, XPS. We fabricated Graphene/h-BN/Graphene devices by direct deposition of graphene (bottom layer), h-BN (insulating barrier) and graphene (top layer) sequentially using a plasma enhanced chemical vapor deposition on Si/SiO 2 substrates. The thickness of the h-BN insulating layer was varied by tuning the plasma power and the deposition time. Samples were characterized by Raman, AFM, and XPS. The I-V data follows the barrier thickness dependent quantum tunneling behavior for equally doped graphene layers. The resonant tunneling behavior was observed at room temperature for oppositely doped graphene layers where hydrazine and ammonia were used for n-doping of one of the graphene layers. The resonance with negative differential conductance occurs when the band structures of the two electrodes are aligned. The doping effect of the resonant peak is observed for varying doping levels. The results are explained according to the Bardeen tunneling model.

2D-materials↗

Evidence of hexagonal germanium grains on annealed monolayer MoS 2

Growing three-dimensional (3D) materials on two-dimensional (2D) van der Waals surface has shown its effectiveness in overcoming materials incompatibility for stacking transferrable membranes toward advanced device manufacturing. Herein, we demonstrate that the nucleation of hexagonal germanium (Ge) grains within a continuous crystalline film, which has been unfeasible through traditional epitaxy techniques, is realized by chemical vapor deposition on top of n-type monolayer molybdenum disulfide (MoS 2 ) substrates. Suggested by quantum molecular dynamics calculation, the hexagonal Ge nucleation is thermodynamically preferable to cubic Ge when growing on monolayer MoS 2 with sulfur vacancies. The strained hexagonal Ge grains have been confirmed by transmission electron microscopy analyses from both real space and reciprocal space. Scanning probe microscopy shows that the hexagonal Ge film possesses higher reflectivity in infrared spectral range, implying a higher carrier concentration resulted from the narrower band gap, as compared to cubic Ge.

36 MATERIALS SCIENCE↗

Membrane Electrode Assembly Manufacturing Automation Technology for the Electrochemical Compression of Hydrogen: Cooperative Research and Development (Final Report)

Electrochemical compression has the possibility to outcompete mechanical compression for hydrogen end- use applications. While HyET has a compressor that can output JO kilograms (kg)/day (fully scalable from home-to-industrial application) at up to 700 bar, the energy demand and reliability require top-quality electrochemical hydrogen compression (EHC) membrane electrode assemblies (MEAs), preferably prepared by cost-effective high-capacity manufacturing. High pressure requires a special MEA design, deviating from typical proton exchange membrane fuel cell (PEMFC) MEAs with adapted catalyst layer substrates, asking for a modified coating process. The National Renewable Energy Laboratory (NREL) will help HyET by developing an automated catalyst coating process fit for EHC MEA manufacturing. In addition, inline quality inspection methods will be developed/selected to improve the MBA quality as it is used for EHC stack assembly. In a joint effort, NREL and HyET will even design an automated manufacturing process for the EHC MEA and approach potential United States (US) suppliers of manufacturing equipment.

30 DIRECT ENERGY CONVERSION↗