Strain and Isotopic Effects in Two-Dimensional WSe2
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Material Science↗
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Multiscale Richtmyer-Meshkov instability experiments to isolate the strain rate dependence of strength
Theoretical analysis of Richtmyer-Meshkov instability (RMI) experiments for solid strength shows that the strain rate for a given shock should be inversely proportional to the length scale of the sine wave perturbations when η 0 k , the nondimensional amplitude to wavelength ratio, is held fixed. To isolate the effect of strain rate on strength, free-surface RMI specimens of annealed copper were prepared with three perturbation regions with the same η 0 k but different length scales, characterized by the wavelength λ varying by a factor of 4.9 from 65 to 130 to 320 µ m . Three such targets with different fixed η 0 k ′ s were impacted to a shock pressure of 25 GPa, and the instability evolution was measured with photon Doppler velocimetry. Strengths estimated by comparing hydrocode simulation to the data increased from 700 to 1200 MPa as λ decreased. The different η 0 k targets exercised increasing amounts of plastic strain yet showed no evidence of strain hardening. Physical regime sensitivity analysis determined that for 320 − 65 µ m wavelength perturbations, the effective strain rates increased from 8.7 × 10 6 to 3.3 × 10 7 s − 1 , a factor of 3.8. Thus, the predicted strain rate scaling was mostly achieved but slightly suppressed by increased strength at higher rates. The RMI strength estimates were plotted against constitutive testing data on copper from the literature to show striking evidence of the strength upturn at higher strain rates. Published by the American Physical Society 2024
36 MATERIALS SCIENCE↗
Controlling electric and magnetic Purcell effects in phosphorene via strain engineering
Here, we investigate the spontaneous emission lifetime of a quantum emitter near a substrate coated with phosphorene under the influence of uniaxial strain. We consider both electric dipole and magnetic dipole-mediated spontaneous transitions from the excited to the ground state. The modeling of phosphorene is performed by employing a tight-binding model that goes beyond the usual low energy description. We demonstrate that both electric and magnetic decay rates can be strongly tuned by the application of uniform strain, ranging from a near-total suppression of the Purcell effect to a remarkable enhancement of more than 1300% due to the high flexibility associated with the puckered lattice structure of phosphorene. We also unveil the use of strain as a mechanism to tailor the most probable decay pathways of the emitted quanta. Our results show that uniaxially strained phosphorene is an efficient and versatile material platform for the active control of light-matter interactions thanks to its extraordinary optomechanical properties.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Shubnikov–de Haas oscillations of biaxial-strain-tuned superconductors in pulsed magnetic field up to 60 T
Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure and, for metallic 2D materials, quantum oscillations superimposed on the transport signals encode Fermi surface parameters. In this manuscript, we utilize biaxial strain as an external tuning parameter and investigate the effects of strain on the electronic properties of two quasi-2D superconductors, MoTe 2 and RbV 3 Sb 5 , by measuring their magnetoresistance in pulsed magnetic fields up to 60 T. With a careful selection of insulating substrates, we demonstrate the possibility of both the compressive and tensile biaxial strains imposed on MoTe 2 and RbV 3 Sb 5 , respectively. For both systems, the applied strain has led to superconducting critical temperature enhancement compared to their free-standing counterparts, proving the effectiveness of this biaxial strain method at cryogenic temperatures. Clear quantum oscillations in the magnetoresistance—the Shubnikov–de Haas (SdH) effect—are obtained in both samples. In strained MoTe 2 , the magnetoresistance exhibits a nearly quadratic dependence on the magnetic field and remains non-saturating even at the highest field, whereas in strained RbV 3 Sb 5 , two SdH frequencies showed a substantial enhancement in effective mass values, hinting at a possible enhancement of charge fluctuations. Our results demonstrate that combining biaxial strain and pulsed magnetic field paves the way for studying 2D materials under unprecedented conditions.
2D materials↗
Shubnikov-de Haas oscillations of biaxial-strain-tuned superconductors in pulsed magnetic field up to 60 T
Two-dimensional (2D) materials have gained increasing prominence not only in fundamental research but also in daily applications. However, to fully harness their potential, it is crucial to optimize their properties with an external parameter and track the electronic structure simultaneously. Magnetotransport over a wide magnetic field range is a powerful method to probe the electronic structure and, for metallic 2D materials, quantum oscillations superimposed on the transport signals encode Fermi surface parameters. In this manuscript, we utilize biaxial strain as an external tuning parameter and investigate the effects of strain on the electronic properties of two quasi-2D superconductors, MoTe 2 and RbV 3 Sb 5 , by measuring their magnetoresistance in pulsed magnetic fields up to 60 T. With a careful selection of insulating substrates, we demonstrate the possibility of both the compressive and tensile biaxial strains imposed on MoTe 2 and RbV 3 Sb 5 , respectively. For both systems, the applied strain has led to superconducting critical temperature enhancement compared to their free-standing counterparts, proving the effectiveness of this biaxial strain method at cryogenic temperatures. Clear quantum oscillations in the magnetoresistance—the Shubnikov–de Haas (SdH) effect—are obtained in both samples. In strained MoTe 2 , the magnetoresistance exhibits a nearly quadratic dependence on the magnetic field and remains non-saturating even at the highest field, whereas in strained RbV 3 Sb 5 , two SdH frequencies showed a substantial enhancement in effective mass values, hinting at a possible enhancement of charge fluctuations. Our results demonstrate that combining biaxial strain and pulsed magnetic field paves the way for studying 2D materials under unprecedented conditions.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
The effects of thickness, polarization, and strain on vibrational modes of 2D Fe 3 GeTe 2
In this study, we investigated the effects of thickness, light polarization, and strain on the Raman spectra of two-dimensional (2D) Fe 3 GeTe 2 (FGT) crystals synthesized via chemical vapor transport. The crystals are thoroughly characterized using a combination of microscopic, diffraction, and spectroscopic techniques. Particularly, a systematic angle-resolved polarized Raman spectroscopy study reveals a clear polarization dependence of the Raman intensity in both parallel and crossed polarization directions, with the $A$$^{1}_{g}$ mode completely disappearing in the crossed polarization direction. The angle-dependent intensity of both the $A$$^{1}_{g}$ and $E$$^{2}_{2g}$ modes in parallel polarization and the intensity of the $E$$^{2}_{2g}$ mode in the crossed polarization remain constant at all angles. These findings align with predictions from Raman tensor analysis, providing compelling evidence for the unambiguous assignment of the $A$$^{1}_{g}$ and $E$$^{2}_{2g}$ modes to specific peaks observed in the Raman spectrum of FGT, resolving existing confusion in the literature regarding their assignment. Furthermore, we examine the effect of strain on the Raman spectrum of 2D FGT in-situ using a bending device. Our study, conducted on a monolayer to few-layer 2D FGT deposited onto polyethylene terephthalate and subjected to outward (inward), i.e., tensile (compressive) bending, demonstrates appreciable downshifting (upshifting) of the Raman peak position of both $A$$^{1}_{g}$ and $E$$^{2}_{2g}$ modes. Furthermore, these findings are particularly significant given that strain engineering represents an effective approach to modulate the magnetic properties of FGT and other 2D magnetic materials.
2D materials↗
Strain-Driven Evolution of Structural and Carrier Recombination Dynamics in Germanium
Strain engineering in group-IV semiconductors, in particular germanium (Ge), offers a promising route for advancing next-generation optoelectronic device performance. High minority carrier lifetime serves as a direct indicator of superior material quality and device efficiency. Several factors govern the minority carrier lifetime in both strained Ge and strained GeSn, such as strain level, epilayer thickness, defects, surface roughness, and Sn alloying. In this study, the impact of biaxial strain on effective minority carrier lifetimes of tensile-strained Ge (0% ..epsilon..-Ge/Al?As, 0.78% ..epsilon..-Ge/In0.115?Ga0.885?As, and 0.93% ..epsilon..-Ge/In0.16?Ga0.84?As) and compressively strained GeSn (-0.53% c-Ge0.97?Sn0.03/Al?As) epilayers, grown by molecular beam epitaxy, was experimentally investigated via the microwave-reflection photoconductive decay (..mu..-PCD) technique as a simultaneous function of thickness and strain. The structural and strain-relaxation properties were analyzed by high-resolution x-ray diffraction and Raman spectroscopy, while surface morphology analysis using atomic force microscopy provided insights into the surface roughness of strained Ge-based epilayers. Defect characterization by cross-section transmission electron microscopy revealed superior crystalline quality of ..epsilon..-Ge in one epilayer, while twin boundary formation was observed in the other. We investigated the carrier recombination dynamics in epitaxially strained Ge by extracting the bulk recombination lifetime and surface recombination velocity using the thickness-dependent minority carrier lifetime. High effective minority carrier lifetimes of approximately 60-340 ns were achieved at high strain levels with minimal dependence on the thickness of the strained Ge-based epilayers by means of the ..mu..-PCD technique. Minority carrier lifetimes in Ge-based epilayers exhibit a quadratic dependence on the biaxial strain, ranging from -0.88% (compressive) to +1.6% (tensile). The analysis of the carrier recombination dynamics in strained Ge-based heterostructures offers a pathway to designing group-IV based optoelectronic devices.
36 MATERIALS SCIENCE↗
Investigation of grain size and geometrically necessary dislocation density dependence of flow stress in Mg-4Al by using nanoindentation
Models for grain size dependence of flow stress typically ignore contributions from geometrically necessary dislocations (GNDs) in the grain boundary regions. Ashby had proposed the following equation for flow stress (τ) as a function of grain size (d) and effective plastic strain ($\bar{ε}$): $τ = τ_{0} + C'G\sqrt{^{b\bar{ε}}_{d}}$ using an unknown empirical coefficient, C’, In this study, the coefficient, C’, and equation for the grain size dependence of flow stress were investigated in Mg-4Al using nanoindentation. C’ ranges from 1.4 to 7.11 that is related to the hardness difference (∆H0) between the adjacent grains as $C' + 0.62\sqrt{ΔH_{0}}$. Ashby equation was used to predict uniaxial stress-strain curves in grain sizes of 55 µm, 187 µm, and 333 µm. The results showed lower flow stress and lower hardening rate compared to experimentally measured tensile stress-strain response. The discrepancy seems to be a result of hardening effect of SSDs. Here, we propose a modified Ashby equation that takes into account the hardening effect of SSDs and GNDs separately, resulting in a better agreement between calculated and experimentally measured values. This analysis demonstrates estimation of uniaxial stress-strain response using nanoindentation measurements that captures effects of grain size, and strain hardening from SSDs and GNDs. The combination of the revised equation and nanoindentation method will enable rapid exploration of stress-strain response of a diverse range of single-phase polycrystalline alloys.
36 MATERIALS SCIENCE↗
Improving OFDR Distributed Fiber Sensing by Fibers With Enhanced Rayleigh Backscattering and Image Processing
This article investigates using optical fibers with enhanced backscattering profiles to improve distributed fiber sensor performance and reduce instrumentation costs. Using a femtosecond (fs) laser direct writing technique, the Rayleigh backscattering profile of a standard telecom fiber was enhanced by more than 40 dB to improve the signal-to-noise ratio (SNR) for optical frequency domain reflectometry (OFDR). The enhanced backscattering signals enable effectively distributed strain measurements using a low-cost tunable laser (TL). Median filtering is applied to denoise cross correlation results to further improve measurement outcomes. Results presented in this article show that a TL with a 1-nm tuning range, which is far less than the tuning range used in commercial OFDR interrogators, can perform effectively distributed strain measurements using sensing fibers with enhanced backscattering profiles. The sensing fiber with over 40-dB backscattering enhancement achieved 4.8-cm spatial resolution in strain measurements with a root mean square accuracy of less than 2.70 με when 10–50 με were exerted to the sensing fiber. In conclusion, results presented in this article reveal both the potential and limitations of sensing fibers with enhanced backscattering for OFDR-based distributed fiber sensors.
42 ENGINEERING↗
Strain-Induced Trapping of Indirect Excitons in MoSe 2 /WSe 2 Heterostructures
Understanding and control of excitons in transition metal dichalcogenide (TMD) materials are essential for the exploration of the rich many-body physics in TMDs and their applications in photonic and optoelectronic devices. Local strain modulation has been utilized as an effective approach for creating potential traps and localizing intralayer excitons in TMD monolayers. Here, we investigate the effect of strains on indirect excitons in TMD heterostructures. The emergence of narrow spectral peaks from the strained sites together with their drastically reduced lifetimes indicates the formation of potential traps in the heterostructures and the trapping of indirect excitons in them. The absence of photon-antibunching from these trapped indirect excitons further reveals their weak localization in the potential traps. Here, our study indicates that, compared to the case of intralayer excitons, narrower potential traps are required for obtaining highly localized indirect excitons due to their unique properties. These findings have important implications for creating long-wavelength quantum emitters in TMD heterostructures and the exploration of indirect exciton condensation and motion in TMDs.
36 MATERIALS SCIENCE↗
Effect of phase transformation strain on the quasi-linear elastic deformation behavior for Nb/Ni[sub
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Shen, Baoguo↗
Anisotropy of effective masses induced by strain in Janus MoSSe and WSSe monolayers
Not Available
Farkous, M. (ORCID:0000000210884300)↗
Strain-Tunable Anomalous Hall Effect in Hexagonal MnTe
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Liu, Zhaoyu [University of Washington]↗
A predictive discrete-continuum multiscale model of plasticity with quantified uncertainty
Multiscale models of materials, consisting of upscaling discrete simulations to continuum models, are unique in their capability to simulate complex materials behavior. The fundamental limitation in multiscale models is the presence of uncertainty in the computational predictions delivered by them. In this work, a sequential multiscale model has been developed, incorporating discrete dislocation dynamics (DDD) simulations and a strain gradient plasticity (SGP) model to predict the size effect in plastic deformations of metallic micro-pillars. The DDD simulations include uniaxial compression of micro-pillars with different sizes and over a wide range of initial dislocation densities and spatial distributions of dislocations. An SGP model is employed at the continuum level that accounts for the size-dependency of flow stress and hardening rate. Sequences of uncertainty analyses have been performed to assess the predictive capability of the multiscale model. The variance-based global sensitivity analysis determines the effect of parameter uncertainty on the SGP model prediction. The multiscale model is then constructed by calibrating the continuum model using the data furnished by the DDD simulations. A Bayesian calibration method is implemented to quantify the uncertainty due to microstructural randomness in discrete dislocation simulations (density and spatial distribution of dislocations) on the macroscopic continuum model prediction (size effect in plastic deformation). Here, the outcomes of this study indicate that the discrete-continuum multiscale model can accurately simulate the plastic deformation of micro-pillars, despite the significant uncertainty in the DDD results. Additionally, depending on the macroscopic features represented by the DDD simulations, the SGP model can reliably predict the size effect in plasticity responses of the micropillars with below 10% of error.
36 MATERIALS SCIENCE↗
Revealing the competition between charge density wave and superconductivity in CsV 3 Sb 5 through uniaxial strain
In this paper we report the effect of uniaxial strain ε applied along the crystalline a axis on the newly discovered kagome superconductor CsV 3 Sb 5 . At ambient conditions, CsV 3 Sb 5 shows a charge-density wave (CDW) transition at T CDW = 94.5K and superconducts below T c = 3.34K. In our paper, when the uniaxial strain ε is varied from –0.90% to 0.90%,T c monotonically increases by ~33% from 3.0 to 4.0 K, giving rise to the empirical relation T c (ε) = 3.4 + 0.56ε + 0.12ε 2 . On the other hand, for ε changing from –0.76% to 1.26%,TCDW decreases monotonically by ~10% from 97.5 to 87.5 K with T CDW (ε) = 94.5 – 4.72ε – 0.60ε 2 . The opposite response of T c and T CDW to the uniaxial strain suggests strong competition between these two orders. Comparison with hydrostatic pressure measurements indicate that it is the change in the c axis that is responsible for these behaviors of the CDW and superconducting transitions, and that the explicit breaking of the sixfold rotational symmetry by strain has a negligible effect. Combined with our first-principles calculations and phenomenological analysis, we conclude that the enhancement in Tc with decreasing c is caused primarily by the suppression of T CDW , rather than strain-induced modifications in the bare superconducting parameters. We propose that the sensitivity of T CDW with respect to the changes in the c axis arises from the impact of the latter on the trilinear coupling between the $M$$^{+}_{1}$ and the $L$$^{–}_{2}$ phonon modes associated with the CDW. Altogether, our paper reveals that the c-axis lattice parameter, which can be controlled by both pressure and uniaxial strain, is a powerful tuning knob for the phase diagram of CsV 3 Sb 5 .
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Effect of grain structure and strain rate on dynamic recrystallization and deformation behavior: A phase field-crystal plasticity model
Herein, a phase field (PF)-crystal plasticity (CP) model has been developed to study the effects of initial grain structures, recrystallized grain orientation, and strain rates on dynamic recrystallization and deformation behavior under stress states typical of the Shear Assisted Processing and Extrusion (ShAPE) process. The model takes the geometrically necessary dislocation density as the nucleation criterion for recrystallization and minimizes the deformation energy as the driving force of recrystallized grain growth. Using this model, the effects of grain orientations and strain rates on dynamic recrystallization and deformation behavior were simulated. The results demonstrate that (1) a polycrystalline structure with the texture observed in ShAPE process has the lowest yield stress under the ShAPE stress conditions, (2) the recrystallized grains with the texture observed in ShAPE process largely soften the materials, and (3) higher shear strain rate or rotation speed results in larger magnitude of material softening.
36 MATERIALS SCIENCE↗
DEM analysis of the effect of interface transition zone on dynamic splitting tensile behavior of high-strength concrete based on multi-phase model
Highlights: • Crushable aggregates with the real geometry shape are generated by using clump-cluster method. • Flat-Joint Model is adopted as the constitutive law. • The tensile strength is almost not affected by ITZ strength when its strength exceeds 0.8 times that of mortar. • A modified formula that can reflect the functional relationship between the ITZ strength and the TDIF is proposed. The tensile strength is one of the main parameters in the design of concrete structures and has an important influence on the cracking performance and durability of concrete materials. As the weak region in concrete, the strength of the interface transition zone (ITZ) directly affects the dynamic mechanical response of concrete. Meanwhile, considering that the tensile performance of concrete is far weaker than its compressive performance, the study of the strength of ITZ is of great significance to the dynamic tensile fracture characteristics and mechanical properties of concrete. In this paper, a method combining 3D scanning technology and Clump-Cluster was proposed to generate a real geometry shape model of crushable aggregate. On this basis, the 3D discrete element model (DEM) of high-strength concrete was constructed using the Flat-Joint Model (FJM). The effects of the ITZ strength on the failure mode, number of microcracks, tensile strength and strain rate effect of high-strength concrete under strain rates from 0.01/s to 100/s were studied by splitting tensile test. The simulation results indicate that the number of microcracks generated decreases with the increase of ITZ strength, and the proportion of ITZ cracks decreases obviously. When the ITZ strength exceeds the critical value of 0.8 times that of mortar, the tensile strength is almost not affected by ITZ strength. In addition, based on the numerical simulation results, a modified formula that can reflect the functional relationship between the ITZ strength and the dynamic increasing factor of the concrete tensile strength (TDIF) is proposed, and the rationality of the TDIF modified formula is verified.
36 MATERIALS SCIENCE↗
Bragg coherent diffraction imaging by simultaneous reconstruction of multiple diffraction peaks
Bragg coherent diffractive imaging (BCDI) is a non-invasive microscopy technique that can visualize the morphology and internal lattice deviations of crystals with nanoscale spatial resolution and picometer deformation sensitivity. While BCDI has been successfully applied in various studies of materials, it is less successful for highly-strained crystals. Specifically, it is difficult to correctly reconstruct the electron density of a highly-strained object using conventional phase retrieval algorithms. Although various algorithms have been developed to overcome this challenge, most of them require a priori knowledge that is not always available in practice. Here we report on a new phase retrieval workflow that can invert diffraction patterns from multiple Bragg peaks simultaneously. The new workflow is explored via simulated diffraction from crystals with various strain conditions. Furthermore, reconstructions from the new workflow consistently demonstrate more accurate electron density maps, in comparison with the conventional method. For highly-strained crystals, the new workflow improves the reliability and consistency of BCDI phase retrieval significantly.
36 MATERIALS SCIENCE↗