Search NASA⌕ Search

SEARCH · Search NASA

Results for “surface recombination velocities”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single-source precursor

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster /(t-Bu)GaS/4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Macinnes, Andrew N.↗
NASA NTRS1993

Photoluminescence intensity enhancement of GaAs by vapor-deposited GaS - A rational approach to surface passivation

A two order-of-magnitude enhancement of photoluminescence intensity relative to untreated GaAs has been observed for GaAs surfaces coated with chemical vapor-deposited GaS. The increase in photoluminescence intensity can be viewed as an effective reduction in surface recombination velocity and/or band bending. The gallium cluster (/t-Bu/GaS)4 was used as a single-source precursor for the deposition of GaS thin films. The cubane core of the structurally-characterized precursor is retained in the deposited film producing a cubic phase. Furthermore, a near-epitaxial growth is observed for the GaS passivating layer. Films were characterized by transmission electron microscopy, X-ray powder diffraction, and X-ray photoelectron and Rutherford backscattering spectroscopies.

Jenkins, Phillip P.↗
NASA NTRS1993

Lattice-mismatched In(0.40)Al(0.60)As window layers for indium phosphide solar cells

The efficiency of indium phosphide (InP) solar cells is limited by its high surface recombination velocity (approximately 10(exp 7) cm/s). This might be reduced by a wide-bandgap window layer. The performance of InP solar cells with wide-bandgap (1.8 eV) lattice-mismatched In(0.40)Al(0.60)As as a window layer was calculated. Because the required window layer thickness is less than the critical layer thickness, growth of strained (pseudomorphic) layers without interfacial misfit dislocations should be possible. Calculations using the PC-lD numerical code showed that the efficiencies of baseline and optimized p(+)n (p-on-n) cells are increased to more than 22 and 24 percent, (air mass zero (AMO), 25 C), respectively for a lattice-mismatched In(0.40)Al(0.60)As window layer of 10-nm thickness. Currently, most cell development work has been focused on n(+)p (n-on-p) structures although comparatively little improvement has been found for n(+)p cells.

Jain, Raj K.↗
NASA NTRS2006

Experimental Analysis of Proton-Induced Displacement and Ionization Damage Using Gate-Controlled Lateral PNP Bipolar Transistors

The electrical characteristics of proton-irradiated bipolar transistors are affected by ionization damage to the insulating oxide and displacement damage to the semiconductor bulk. While both types of damage degrade the transistor, it is important to understand the mechanisms individually and to be able to analyze them separately. In this paper, a method for analyzing the effects of ionization and displacement damage using gate-controlled lateral PNP bipolar junction transistors is described. This technique allows the effects of oxide charge, surface recombination velocity, and bulk traps to be measured independently.

Ball, D. R.↗
NASA NTRS1987

A Surface-Controlled Solar Cell

Open-circuit voltage and cell efficiency increased. Proposed technique for controlling recombination velocity on solar-cell surfaces provides cells of increased efficiency and open-circuit voltage. In present cells, uncontrolled surface recombination velocity degrades opencircuit voltage and efficiency. In cell using proposed technique, transparent conducting layer, insulated from cell contacts, biased to enable variable control of surface recombination velocity.

Daud, T.↗
NASA NTRS1985

Recombination phenomena in high efficiency silicon solar cells

The dominant recombination phenomena which limit the highest efficiency attainable in silicon solar cells under terrestrial sunlight are reviewed. The ultimate achievable efficiency is limited by the two intrinsic recombination mechanisms, the interband Auger recombination and interband Radiative recombination, both of which occur in the entire cell body but principally in the base layer. It is suggested that an optimum (26%) cell design is one with lowly doped 50 to 100 micron thick base, a perfect BSF, and zero extrinsic recombination such as the thermal mechanism at recombination centers the Shockley-Read-Hall process (SRH) in the bulk, on the surface and at the interfaces. The importance of recombination at the interfaces of a high-efficiency cell is demonstrated by the ohmic contact on the back surface whose interface recombination velocity is infinite. The importance of surface and interface recombination is demonstrated by representing the auger and radiative recombination losses by effective recombination velocities. It is demonstrated that the three highest efficiency cells may all be limited by the SRH recombination losses at recombination centers in the base layer.

Sah, C. T.↗
NASA NTRS1984

Electron-beam induced current characterization of back-surface field solar cells using a chopped scanning electron microscope beam

A chopped electron beam induced current (EBIC) technique for the chacterization of back-surface field (BSF) solar cells is presented. It is shown that the effective recombination velocity of the low-high junction forming the back-surface field of BSF cells, in addition to the diffusion length and the surface recombination velocity of the surface perpendicular to both the p-n and low-high junctions, can be determined from the data provided by a single EBIC scan. The method for doing so is described and illustrated. Certain experimental considerations taken to enhance the quality of the EBIC data are also discussed.

Luke, K. L.↗
NASA NTRS1990

Reflecting boundary conditions for graded p-n junctions

In a graded junction, the formalism for handling reflecting boundary conditions must be modified. Since a significant drift term is present, zero recombination velocity at the surface does not imply a zero excess carrier gradient but rather zero overall flux. A model for analyzing p-n junctions fabricated by implantation or diffusion is presented, assuming the dominant recombination mechanism in the graded region is Auger. The model enables optimization of diode design. By proper selection of parameters, mainly by reducing surface concentration or by increasing the steepness of the dopant profile, it is possible to drastically reduce the saturation current generated by the graded region.

Schacham, S. E.↗
NASA NTRS1990

Development of advanced silicon solar cells for Space Station Freedom

This report describes the development of large area high efficiency wrapthrough solar cells for Space Station Freedom. The goal of this contract was the development and fabrication of 8 x 8 cm coplanar back contact solar cells with a minimum output of 1.039 watts/cell. The first task in this program was a modeling study to determine the optimum configuration of the cell and to study the effects of surface passivation, substrate resistivity, and back surface field on the BOL and EOL performance. In addition, the optical stack, including the cell cover, AR coatings, and Kapton blanket, was modeled to optimize 'on orbit' operation. The second phase was a manufacturing development phase to develop high volume manufacturing processes for the reliable production of low recombination velocity boron back surface fields, techniques to produce smooth, low leakage wrapthrough holes, passivation, photoresist application methods, and metallization schemes. The final portion of this program was a pilot production phase. Seven hundred solar cells were delivered in this phase. At the end of the program, cells with average efficiencies over 13 percent were being produced with power output in excess of 1.139 watts/cell, thus substantially exceeding the program goal.

Lillington, David R.↗
NASA NTRS1977

High efficiency GaAs solar cells

The present status of the GaAlAs/GaAs heteroface solar cell program is reported. Studies have been concentrated on GaAlAs/GaAs heteroface solar cells; however, some research has been conducted on thin junction, diffused GaAs solar cells. Emphasis has been on obtaining high efficiency (18% to 20%) GaAs solar cells. Two problems that have limited the efficiency of GaAs solar cells are the high recombination velocity of carriers near the surface and the low minority carrier diffusion length in n-GaAs.

Walker, G. H.↗
NASA NTRS1961

Effect of Surface Preparation and Gas Flow on Nitrogen Atom Surface Recombination

The effects of surface preparation and gas flow on the recombination of nitrogen atoms at copper and platinum surfaces were determined. Atoms were generated by an electrodeless 2450-megacycle-per-second discharge, and their concentration was measured by gas-phase titration with nitric oxide. Test surfaces were either vacuum-evaporated films or spheres machined from bulk metal and cemented around small glass-bead thermistors. Heat released by recombination was measured as the difference in electrical energy required to maintain a given thermistor temperature with and without a catalytic surface exposed. Recombination coefficients measured at flow velocities of 1120, 1790, 2250, and 3460 centimeters per second and at pressures of 0.42 and 0.59 millimeter of mercury showed that flow conditions had no effect. The results were also independent of atom concentration. A rough indication of the temperature dependence was obtained; it was greater for copper than for platinum. Platinum films deposited on platinum or on glass had the same activity - about 3 percent of the atoms impinging recombined. With copper, however, the glass substrate greatly reduced the percent of atoms recombining over that of a bulk copper substrate where 4 percent of the impinging atoms recombined. This effect could be overcome by depositing a second film on top of the first. Bulk metal samples were subjected to various surface treatments including polishing, degreasing with a chlorinated hydrocarbon, washing with nitric acid, and rinsing with water. Polished, degreased platinum had low activity compared to an evaporated film, but nitric acid treatment made it equivalent. Polished, degreased copper was only slightly less active than a copper film; nitric acid etching decreased the activity still further, probably by preferentially exposing facets of low catalytic efficiency.

Prok, George M.↗
NASA NTRS1987

Variations in the electrical short-circuit current decay for recombination lifetime and velocity measurements

An improved measurement system for electrical short-circuit current decay is presented that extends applicability of the method to silicon solar cells having an effective lifetime as low as 1 microsec. The system uses metal/oxide/semiconductor transistors as voltage-controlled switches. Advances in theory developed here increase precision and sensitivity in the determination of the minority-carrier recombination lifetime and recombination velocity. A variation of the method, which exploits measurements made on related back-surface field and back-ohmic contact devices, further improves precision and sensitivity. The improvements are illustrated by application to 15 different silicon solar cells.

Jung, Tae-Won↗
NASA NTRS1985

Space shuttle ram glow: Implication of NO2 recombination continuum

The ram glow data gathered to data from imaging experiments on space shuttle suggest the glow is a continuum (within 34 angstrom resolution); the continuum shape is such that the peak is near 7000 angstroms decreasing to the blue and red, and the average molecular travel leading to emission after leaving the surface is 20 cm (assuming isotropic scattering from the surface). Emission continuum is rare in molecular systems but the measured spectrum does resemble the laboratory spectrum of NO2 (B) recombination continuum. The thickness of the observed emission is consistent with the NO2 hypothesis given an exit velocity of approx. 2.5 km/sec (1.3 eV) which leaves approx. 3.7 eV of ramming OI energy available for unbonding the recombined NO2 from the surface. The NO2 is formed in a 3-body recombination of OI + NO + m = NO2 + m where OI originates from the atmosphere and NO is chemically formed on the surface from atmospheric NI and OI. The spacecraft surface then acts as the n for the reaction: Evidence exists from orbital mass spectrometer data that the NO and NO2 chemistry described in this process does occur on surfaces of spectrometer orifices in orbit. Surface temperature effects are likely a factor in the NO sticking efficiency and, therefore, glow intensities.

Swenson, G. R.↗
NASA NTRS1991

Laboratory investigation of visible shuttle glow mechanisms

Laboratory experiments designed to uncover mechanistic information about the spectral and spatial characteristics of shuttle glow were conducted. The luminescence was created when a pulse of O atoms traveling at orbital velocities was directed toward NO molecules previously adsorbed to aluminum, nickel, and Z306 Chemglaz (a common baffle black) coated surfaces held at various temperatures. Spectral and spatial measurements were made using a CCD imaging spectrometer. Corroborative spectral information was recorded in separate measurements using a scanning monochromator and gated photomultiplier arrangement. The e-folding distance at several temperatures was calculated from images of the surface glow using the photometrics image processing capability of the imaging spectrometer. The e-folding distance was not altered as a function of incoming O beam velocity. The results are presented and the observations provide direct evidence that the visible shuttle glow results from recombination of oxygen atoms and surface bound NO.

Leone, A.↗
NASA NTRS1986

A high flux pulsed source of energetic atomic oxygen

The design and demonstration of a pulsed high flux source of nearly monoenergetic atomic oxygen are reported. In the present test setup, molecular oxygen under several atmospheres of pressure is introduced into an evacuated supersonic expansion nozzle through a pulsed molecular beam valve. A 10J CO2 TEA laser is focused to intensities greater than 10 to the 9th W/sq cm in the nozzle throat, generating a laser-induced breakdown with a resulting 20,000-K plasma. Plasma expansion is confined by the nozzle geometry to promote rapid electron-ion recombination. Average O-atom beam velocities from 5-13 km/s at fluxes up to 10 to the 18th atoms/pulse are measured, and a similar surface oxygen enrichment in polyethylene samples to that obtained on the STS-8 mission is found.

Krech, Robert H.↗
NASA NTRS1985

Slip-boundary equations for multicomponent nonequilibrium airflow

Equations are presented for the surface-slip (or jump) values of species concentration, pressure, velocity, and temperature in the low Reynolds number, high-altitude flight regime of a space vehicle. These are obtained from closed-form solutions of the mass, momentum, and energy flux equations by using the Chapman-Enskog velocity distribution function. This function represents a solution of the Boltzmann equation in the Navier-Stokes approximation. The analysis, obtained for nonequilibrium multicomponent airflow, includes the finite-rare surface catalytic recombination and changes in the internal energy during reflection from the surface. Expressions for the various slip quantities have been obtained in a form which can readily be employed in flow-field computations. A consistent set of equations is provided for multicomponent and binary mixtures and single-species gas. An expression is also provided for the finite-rate species-concentration boundary condition for a multicomponent mixture in the absence of slip.

Gupta, R. N.↗