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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Growth and characterization of high-quality Zr doped AlN epilayers

AlN stands out for its remarkable figures of merit for electronic and photonic devices, attributed to its ultrawide bandgap of ∼6.1 eV and an exceptionally high critical field of ∼15 MV/cm. More recently, zirconium (Zr) doped AlN (AlN:Zr) has also been identified as a promising material platform for the exploration of solid-state qubits for quantum information and technology, high performance piezoelectric acoustic wave resonators, and optically triggered ultrafast power switching devices facilitated by optically activating Zr related impurities. Despite the significant potential, the ability for producing AlN:Zr epitaxial structures has yet to be established. In this study, we have achieved AlN:Zr epilayers with a high Zr doping level [NZr] of up to 1020 cm−3 using industrial standard metal-organic chemical vapor deposition growth technique. High crystalline quality of AlN:Zr was confirmed by x-ray diffraction, revealing a narrow full width at half maximum of the (002) rocking curve at 216 arcsec for 1.8 μm thick epilayers deposited on sapphire at [NZr]=1020 cm−3. Zr doping was observed to slightly increase the c-lattice constant to 4.992 Å for AlN:Zr (at [NZr]=1020 cm−3) compared to 4.980 Å for undoped AlN. X-ray photoelectron spectroscopy measurement results verified the substitution of Zr at the Al site (ZrAl). The formation of (ZrAl–VN) complexes, which are predicted to possess all the desired properties required by quantum qubits, was confirmed through optical absorption studies. The realization of high-quality AlN:Zr epilayers significantly broadens the scope of technologically significant device applications for AlN.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Advances in Molecular Beam Epitaxy Growth of Ultra-Wide Bandgap Ga2O3 Based Alloys

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor material that has attracted attention for its potential to outperform existing SiC and GaN based devices operating at high breakdown voltages and high temperature. Isovalent alloying of In and Al in Ga2O3 provides the ability to engineer bandgap energy and strain of the material. Alloying with Al increases the bandgap energy and the theoretically achievable Baliga's figure of merit, a key measure of a material's ultimate performance limits for high power switching devices. Alloying with In introduces compressive strain and can be used to counteract the tensile strain of Al incorporation. The resulting (AlxGa1-x-yIny)2O3 alloy can be lattice-matched to commercially available Ga2O3 wafers and has a tunable bandgap energy greater than that of Ga2O3, 4.76 eV. Such lattice-matched material can be grown arbitrarily thick without the detrimental effects of elastic strain and relaxation, making it suitable for high voltage diodes and transistors. However, efforts to synthesize isovalent alloys are complicated by their tendency to phase separate into corundum Al2O3 or bixbyite In2O3. Literature reports of the quaternary (AlxGa1-x-yIny)2O3 are limited to <1% unintentional indium incorporation in In-catalyzed (AlxGa1-x)2O3. The primary limitation to quaternary growth is the limited incorporation of indium at elevated growth temperatures. This limited incorporation is due to both the volatility of indium oxide and Al and Ga cation exchange reactions which replace indium in In2O3. We report on the development of a novel high-throughput molecular beam epitaxy (MBE) technique to screen the growth conditions for the ternary alloy (InyGa1-y)2O3, and the application of these findings to the first successful synthesis of phase pure monoclinic (AlxGa1-x-yIny)2O3 by MBE. By leveraging the unique sub-oxide chemistry of Ga2O3 and in-situ monitoring of crystal properties by reflection high-energy electron diffraction (RHEED), a cyclical growth and etch-back method is developed and applied to rapidly characterize the (InyGa1-y)2O3 growth space. This cyclical method provides approximately 10x increase in experimental throughput and up to 46x improvement in Ga2O3 substrate utilization. Appropriate growth conditions for monoclinic (InyGa1- y)2O3 are identified by machine learning analysis of RHEED patterns and targeted growths are characterized ex-situ to confirm improved In incorporation. These growth conditions are then combined with established (AlxGa1-x)2O3 growth conditions to grow quaternary (AlxGa1-x-yIny)2O3 with Al mole fractions ranging from 1.4% - 24.4% and In mole fractions ranging from 3.1% to 15.5%. The chemical and optical properties of the alloys are investigated by XRD, XPS, and spectroscopic ellipsometry. A lattice-matched (AlxGa1-x-yIny)2O3 alloy is examined by 4D-STEM and the chemical and physical uniformity of Al and In incorporation are discussed.

alloy↗
DOE OSTI2021

Design of a Robust Memristive Spiking Neuromorphic System with Unsupervised Learning in Hardware

Spiking neural networks (SNN) offer a power efficient, biologically plausible learning paradigm by encoding information into spikes. The discovery of the memristor has accelerated the progress of spiking neuromorphic systems, as the intrinsic plasticity of the device makes it an ideal candidate to mimic a biological synapse. Despite providing a nanoscale form factor, non-volatility, and low-power operation, memristors suffer from device-level non-idealities, which impact system-level performance. To address these issues, this article presents a memristive crossbar-based neuromorphic system using unsupervised learning with twin-memristor synapses, fully digital pulse width modulated spike-timing-dependent plasticity, and homeostasis neurons. Additionally, the implemented single-layer SNN was applied to a pattern-recognition task of classifying handwritten-digits. The performance of the system was analyzed by varying design parameters such as number of training epochs, neurons, and capacitors. Furthermore, the impact of memristor device non-idealities, such as device-switching mismatch, aging, failure, and process variations, were investigated and the resilience of the proposed system was demonstrated.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Passive and compact liquid metal heat switch

A passive heat switch device is disclosed that includes a casing defining a closed channel, as well as a passive thermal actuator and liquid slug positioned inside the closed channel. The closed channel includes a heat conducting region made of a heat conducting material and an insulating region made of an insulating material. The passive thermal actuator is thermally coupled to the heat conducting material of the heat conducting region and extends into the insulating region of the closed channel. The passive thermal actuator deforms when an actuator temperature falls within a switching temperature range. The liquid slug is positioned within the closed channel and contacts at least a portion of the passive thermal actuator and the closed channel and is configured to move along the closed channel between the insulating region and the thermally conductive region in response to deformation of the passive thermal actuator.

42 ENGINEERING↗
DOE OSTI2025

Electrolytic gold plating, stripping, and ion transport dynamics through a solid-state iodide perovskite

The pronounced electrochemical reactivity between halide perovskites and metal electrodes can introduce mobile extrinsic metal ions which can cause device instability or enable novel functionalities. Here we systematically investigate the kinetics of gold cation (Au + ) migration in indium tin oxide (ITO)/methylammonium lead triiodide (MAPbI 3 )/Au model devices under long-term potentiostatic biasing. Scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and density functional theory (DFT) analyses reveal that Au + ions, electrochemically generated at the Au anode, traverse the perovskite layer with diffusion coefficients on the order of 10 −11 to 10 −10 cm 2 s −1 and are subsequently reduced at the cathode as Au 0 clusters, resembling metal plating behavior in electrolytic cells and solid-state batteries during charging. Furthermore, reversing the applied bias strips the plated Au 0 , revealing reversibility suitable for bipolar resistive switching devices and providing direct evidence of the electrochemical and ionic nature of Au transport within the perovskite matrix. Quantitatively determining diffusion coefficients and ion concentrations provides foundational inputs for future drift-diffusion modelling opportunities and allows us to relate our findings to implications on long term operation of devices like photovoltaic modules. These results clearly demonstrate the solid-state electrochemical nature of perovskite devices, highlight methods to be more quantitative about ion transport properties, provide and emphasize the importance of disentangling electro-, photo-, photoelectrochemical processes for understanding device performance and unlocking new functionalities.

14 SOLAR ENERGY↗
DOE OSTI2023

Electrical conductivity of TaO x as function of composition and temperature

The ability to model the resistive switching devices depends on input material parameters and is particularly sensitive to values of electrical conductivity of the functional material as a function of composition and temperature. Here we report the results of conductivity measurements of TaO x with 0 AC ) changing from 0.34 eV at x=2.36 to 0.016 eV at x=1.

36 MATERIALS SCIENCE↗
NASA NTRS1996

Momentum Transfer Studies and Studies of Linear and Nonlinear Optical Properties of Metal Colloids and Semiconductor Quantum Dots

Phase 1 of this work involved design work on a momentum transfer device. The progress on design and testing will be presented. Phase 2 involved the systematic study of the MPD thruster for dual uses. Though it was designed as a thruster for space vehicles, the characteristics of the plasma make it an excellent candidate for industrial applications. This project sought to characterize the system for use in materials processing and characterization. The surface modification on ZnCdTe, CdTe, and ZnTe will be presented. Phase 3 involved metal colloids and semiconductor quantum dots. One aspect of this project involves a collaborative effort with the Solid State Division of ORNL. The thrust behind this research is to develop ion implantation for synthesizing novel materials (quantum dots wires and wells, and metal colloids) for applications in all optical switching devices, up conversion, and the synthesis of novel refractory materials. The ions of interest are Au, Ag, Cd, Se, In, P, Sb, Ga, and As. The specific materials of interest are: CdSe, CdTe, InAs, GaAs, InP, GaP, InSb, GaSb, and InGaAs. A second aspect of this research program involves using porous glass (25-200 A) for fabricating materials of finite size. The results of some of this work will also be reported.

Collins, W. E.↗
DOE OSTI2024

Next-Generation, High-temperature, High-frequency, High-efficiency, High-power-density Traction System

To meet performance and reliability requirements necessary for broader adoption of electric drive vehicles, the Electrical and Electronics Technical Team of the U.S. Drive partnership has established aggressive design goals for next-generation electric vehicle drivetrains. Specifically, the 2025 roadmap stipulates a 100 kW/L power density target and a $\$$2.7/kW cost target for power electronics, in addition to high-voltage operation (i.e., greater than 800 VDC). The additional targets for traction motor and the overall system performance impose further challenges on the power electronics design. For example, many high specific power machines have reduced iron content, and therefore reduced intrinsic filtering, thus requiring the inverter to supply a low-distortion drive current. These machines also typically have a high pole count, thus requiring drive current at a higher electrical frequency. Other motors, such as brush-less dc and switch reluctance machines, require a carefully-shaped, non-sinusoidal drive current (Yang, Shang, Brown, & Krishnamurthy, 2015), (Zhang, Bowman, O'Connel, & Haran, 2018), (Anderson, et al., 2018). Two- and three-level inverter topologies are the conventional framework for the power electronics design of the drivetrain, and some demonstrations have shown recent progress towards addressing cost, power density and efficiency goals (Gurpinar & Ozpineci, 2018), (Zhu, Kim, Chen, Erickson, & Maksimović, 2018), (Deshpande, Chen, Narayanasamy, Sathyanarayanan, & Luo, 2018), (Alizadeh, et al., 2019). However, an unconventional approach may be necessary to take the dramatic leap in power density necessitated by the roadmap—while simultaneously addressing the other system needs. Therefore, this project leverages the flying capacitor multilevel (FCML) topology, together with a scalable, modular approach, to address these needs. This type of hybrid converter has several advantages: lower voltage (i.e., less than 300 V) transistors can be used, energy-dense capacitors process most of the power, and the output current waveform is multilevel and exhibits a frequency multiplying effect—in other words, the output has reduced dv/dt and filtering requirements for the same high voltage dc bus. For example, in an electric vehicle with an 800 V bus, a 10-level FCML could leverage 100 V, commercially available GaN devices switching at 115 kHz to produce a ~1 MHz switching waveform (modulated according to the motor drive requirements) with one ninth of the dv/dt of a two-level converter. Prior work has already demonstrated promising performance and gravimetric power density figures for more electric aircraft applications (Pallo, Foulkes, Modeer, Coday, & Pilawa-Podgurski, 2018). This project leverages lessons learned to achieve the volumetric power density of 100 kW/L by employing advanced liquid cooling, address the 300,000 mile reliability challenge with redundant design, topology failure studies and online health monitoring, and reduce costs to $\$$2.7/kW through the use of low-cost GaN devices, modular converter assemblies, and modest modifications to traditional manufacturing methods. The project involved several hardware designs, each achieving increasing performance. At the conclusion of the project, a volumetric power density of 380 kW/L was achieved, in a 800V dc-ac converter, greatly surpassing even the aggressive target goal.

33 ADVANCED PROPULSION SYSTEMS↗
NASA NTRS2019

Gate Drive Technology Evaluation and Development to Maximize Switching Speed of SiC Discrete Devices and Power Modules in Hard Switching Applications

To understand the limitation of maximizing the switching speed of SiC low current discrete devices and high current power modules in hard switching applications, double pulse tests are conducted and the testing results are analyzed. For power modules, the switching speed is generally limited by the parasitics rather than the gate drive capability. For the discrete SiC device, the conventional voltage source gate drive (VSG) is not sufficient to maximize the switching speed even if the external gate resistance is minimized. The limitation of existing current source gate drives (CSG) are analyzed, and a CSG dedicated for SiC discrete devices is proposed, which can provide constant current during the switching transient regardless of the high Miller voltage and large internal gate resistance. Compared with the conventional VSG, the proposed CSG achieves 67% faster turnon time and 50% turn-off time, and 68% reduction in switching loss at full load condition.

Handong Gui↗
DOE OSTI2020

Time- and strain-dependent nanoscale structural degradation in phase change epitaxial strontium ferrite films

Topotactic phase transition between metallic, perovskite SrFeO 3 and insulating, Brownmillerite SrFeO 2.5 has been extensively studied due to the potential applications in resistive switching devices for neuromorphic computing. However, its practical utilization as memristors has been hindered by the structural instability of SrFeO 3 , which is often ascribed to the generation of oxygen vacancies to form SrFeO 3-δ . Here we reveal the dominating defects generated in SrFeO 3 epitaxial thin films are atomic scale gaps as a result of interfacial strain. Our correlated time- and strain-dependent measurements show that tensile strained SrFeO 3 films form vertical, nanoscale gaps that are SrO-rich, which are accountable for the observed metal-to-insulator transition over time. While compressively strained or small lattice mismatched SrFeO 3 films mainly yield horizontal gaps with a smaller impact on the in-plane transport. The atomic scale origin of such defects and their impact on device performance need to be further understood in order to integrate phase change materials in oxide electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Self-assembled HfO 2 -Au nanocomposites with ultra-fine vertically aligned Au nanopillars

Oxide-metal-based hybrid materials have gained great research interest in recent years owing to their potential for multifunctionality, property coupling, and tunability. Specifically, oxide-metal hybrid materials in a vertically aligned nanocomposite (VAN) form could produce pronounced anisotropic physical properties, e.g., hyperbolic optical properties. Herein, self-assembled HfO 2 -Au nanocomposites with ultra-fine vertically aligned Au nanopillars (as fine as 3 nm in diameter) embedded in a HfO 2 matrix were fabricated using a one-step self-assembly process. The film crystallinity and pillar uniformity can be obviously improved by adding an ultra-thin TiN-Au buffer layer during the growth. Here, the HfO 2 -Au hybrid VAN films show an obvious plasmonic resonance at 480 nm, which is much lower than the typical plasmonic resonance wavelength of Au nanostructures, and is attributed to the well-aligned ultra-fine Au nanopillars. Coupled with the broad hyperbolic dispersion ranging from 1050 nm to 1800 nm in wavelength, and unique dielectric HfO 2 , this nanoscale hybrid plasmonic metamaterial presents strong potential for the design of future integrated optical and electronic switching devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Electrical and thermal characteristics of LaB6 thermionic hollow cathodes operating in He, D2, Ar, and Xe at 4–200 Pa and 0.25–5 A cm−2

We report characteristics of lanthanum hexaboride (LaB6) cathodes for conditions relevant to a high-voltage, high-current switching device. LaB6 is selected because of its relatively low work function, stability in the presence of many common gas impurities, and a low evaporation rate (long life) at operating temperatures. We have investigated the effect of cathode geometry, gas type, pressure, and current on a LaB6 hollow cathode in a diode configuration with an opposing planar anode. The gas is stagnant at a relatively low pressure of 4–200 Pa (0.03–1.5 Torr) because of device high-voltage standoff requirements. In all cases, the plasma voltage decreases to a plateau value with increasing current where a practical device would operate. The plateau voltage aligns with the fill gas excitation or ionization voltage, depending on conditions. At high current, the cathode temperature exceeds that required for thermionic emission to supply the total current, a behavior that is understood by accounting for back-diffusing bulk electrons.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Wet chemistry-synthesized Fe/mixed ferrite soft magnetic composites for high-frequency power conversion

State-of-the-art soft magnetic (SM) alloy systems such as electrical steels and permalloys exhibit large eddy current losses at high-frequency (kHz range and above), limiting their application in fast switching devices. Eddy current losses can be reduced for metallic alloys through a decrease in characteristic length scale or embedding them in an insulation layer. This work proposes the development of fine-scale core materials consisting of metallic SM nano/microparticles with magnetic, inorganic insulation layers, and their synthesis using a wet chemistry-based, scalable method for high frequency and high-power applications. More specifically, a magnetic ferrite coating (Ni 0.5-x Mn x Zn 0.5 Fe 2 O 4 , x = 0.0–0.5) was applied via deposition of ferrite powder produced using a “wet chemistry-based” co-precipitation method; the ferrite was distributed through the Fe micropowder via either ball milling or ultrasonic mixing. Powder cores were prepared by compaction of the synthesized composites. Relative magnetic permeability and core loss were measured at excitation frequencies to 200 kHz. A core loss of 127 kW/m 3 was measured at excitation frequency of 100 kHz and magnetization of 0.02 T. This value improves on the 199.3 kW/m 3 reported in literature at identical excitation conditions for a compact formed from a composite comprising Fe microparticles coated with low-permeability Ni 0.5 Zn 0.5 Fe 2 O 4 . Ultrasonic mixing resulted in slightly lower core loss than ball milling, possibly because ball milling causes loss-increasing deformation of the Fe micropowder. XRD and SEM were used to observe composite composition and core cross-section microstructure.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Decision-tree structures utilizing a phase-transition material

The rich internal physics due to competing electronic phases present in phase-transition materials such as VO2 offer the potential for compact building block design for emerging non-von Neumann computing technologies. Here, based on the relaxation dynamics of an insulator-metal phase transition, we demonstrate experimentally a decision-tree classifier embedded within a single volatile resistive switching device. The tree is constructed by the combination of the voltage pulse and relaxation time and can adapt to different tasks. We use machine learning to analyze the relaxation process, enabling a predictive voltage-relaxation time phase diagram for the electrical resistance state. Classification of the etiology of the chronic cough is presented as a proof-of-principle use case. Further, our approach can be generalized to broader classes of solid-state and solid-liquid interfacial systems that demonstrate a variety of phase relaxations.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Optimal Control Strategy With Efficiency and Reliability Improvement for Offshore DC Microgrids

Offshore microgrids, due to their remote location and lack of external energy support, face significant challenges in wide-range load operation and maintenance. Consequently, efficiency and reliability are critical concerns for converters in offshore dc microgrids. This article presents an optimal control strategy aimed at enhancing both efficiency and reliability. A normalized nonlinear relationship between power loss and thermal stress of a paralleled converter is first established. Based on this, a dual-objective optimization function with an active weight function as well as a system overall performance index is established. The active weight function dynamically adjusts the control priority based on converter efficiency and switching device thermal stress. Then, the optimal power-sharing strategy is derived by the Lagrange multiplier method with the proposed optimal function. Additionally, to accommodate a wide load range, an optimal selection strategy for operating converter combinations is proposed, requiring only low-bandwidth communication. Experiment verification is given to validate the effectiveness of the proposed control strategy. The experiment results demonstrate that the proposed control strategy can improve the overall performance of offshore microgrids by optimizing efficiency and reliability.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Modeling the Low-Pressure High-Voltage Branch of the Paschen Curve for Hydrogen and Deuterium

A physical and numerical model of the Townsend discharge in molecular hydrogen and deuterium has been developed to meet the needs of designing a plasma-based switching device for power grid applications. Here, the model allows to predict the low-pressure branch of the Paschen curve for applied voltage in the range of several hundred kilovolts. In the regime of interest, electrons are in a runaway state and ionization by ions and fast neutrals sustains the discharge. It was essential to correctly account for both gas-phase and surface interactions (electron emission and electron backscattering), especially in terms of their dependence on particle energy. The model yields results consistent with prior data obtained for lower voltage. The three-species (electrons, ions, and fast neutrals) model successfully captures the essential physics of the process.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Building Large-Scale U.S. Synthetic Electric Distribution System Models

Rapid increases in distributed energy resources on distribution systems are prompting research efforts to improve and evaluate electric power distribution algorithms; however, there is a shortage of realistic, large-scale, U.S.-style test systems for the evaluation of such advanced algorithms. Some available tools to build large-scale test systems are of European style, and their application to studies focused on the United States might not be desirable given very different characteristics between the European and U.S. distribution designs. Motivated by this need, this paper develops detailed algorithms to build large-scale U.S. distribution systems and incorporates them in a new Reference Network Model, RNM-US. The approach starts with information from street maps and a catalog with electric equipment that includes power lines, transformers, voltage regulators, capacitors, and switching devices. The paper presents the algorithms through an illustrative case study of the different steps that comprise the process of building a synthetic distribution grid. Finally, the paper presents a medium- and a large-scale data set covering 10 million electrical nodes and 120,000 km of power lines, demonstrating the applicability of the proposed method to build very large-scale synthetic distribution systems.

27 ARPA - Advanced Research Projects Agency-Energy↗
DOE OSTI2022

Performance and Durability of Proton Exchange Membrane Vapor-Fed Unitized Regenerative Fuel Cells

With a growing demand for electricity, clean hydrogen production and usage can be an asset not only to mitigate emissions but for long-term energy storage as well. Hydrogen gas, a high-density energy carrier, can be made through electrolysis in charging mode and generate electricity via a fuel cell in discharging mode in a unitized regenerative fuel cell (URFC). While URFCs reduce cost by combining the charging and discharging modes into a singular device, switching between modes becomes burdensome, and water management is a major challenge. One way to mitigate these issues is to operate the entire system in the vapor phase. Vapor-phase operation simplifies the physics of the system but will introduce losses within the system, primarily ohmic and mass transport during the charging mode. In this study, we explore the performance of a Proton-Exchange-Membrane (PEM)-URFC under vapor-phase conditions and the impact of different PEMs, feed gases, and relative humidity on the performance and durability. By tailoring operating conditions and membrane, the vapor-URFC achieves a roundtrip efficiency of 42% and a lifetime of 50,000 accelerated stress test cycles for fully humidified feeds. Discussion of vapor-URFC for energy storage and extensions to look at various applications shows the promise of this technology.

25 ENERGY STORAGE↗