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Results for “thermoelectric materials”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Reduced thermal conductivity due to scattering centers in p-type SiGe alloys

Spark erosion was used to produce ultra-fine particles of SiGe thermoelectric material and boron nitride, an inert phonon-scattering material. A homogeneous powder was made by mixing the two powders. The mixture was hot pressed to produce a thermoelectric material with uniformity dispersed, ultra-fine, inert, phonon-scattering centers. It is shown that, in samples with inert boron nitride or silicon nitride, thermal conductivity of a SiGe alloy can be reduced by about 25 percent while maintaining the electrical properties of the samples. Annealing of all the samples at 1525 K caused grain growth to over a micron, eliminating the detrimental effect attributable to small grains. Only in the sample with boron nitride the thermal conductivity did remain well below that for standard p-type SiGe (about 25 percent), while the electrical resistivity and Seebeck coefficient were very close to the values for standard p-type 80/20 SiGe.

Beaty, John S.↗
NASA NTRS1982

Thermoelectric conversion for space nuclear power

A lightweight, high performance nuclear reactor power system can offer significant advantages for many space missions. Conceptual design has been completed for the SP-100, a system which utilizes many thermoelectric converters and is capable of delivering 100 kilowatts of electrical power. A reference design, using thermoelectric materials with an average figure of merit of 0.001/K and a reactor heat pipe temperature of 1500 K, is presented which has a mass of 2280 kg not including contingency. The sensitivity of system mass to changes in the configuration and thermoelectric material properties are presented

Ewell, R.↗
NASA NTRS2014

Co(x)Ni(4-x)Sb(12-y)Sn(y) Ternary Skutterudites: Processing and Thermoelectric Properties

Skutterudites have proven to be a useful thermoelectric system as a result of their high figure of merit, favorable mechanical properties, and good thermal stability. Binary skutterudites have received the majority of interest in recent years, as a result of successful double and triple filling schemes. Ternary skutterudites, such as Ni4Sb7Sn5, also demonstrate good thermoelectric performance, with high power factor and low thermal conductivity. Ternary skutterudites, as contrasted to binary systems, provide more possibility for tuning electronic structure as substitutions can be studied on three elements. The Co(x)Ni(4-x)Sb(12-y)Sn(y) system has been investigated as both a p- and n-type thermoelectric material, stable up to 200 C. The system is processed through a combination of solidification, mechanical alloying, and hot pressing steps. Rietveld structure refinement has revealed an interesting occupancy of Sn on both the 24g Wyckoff position with Sb as well as the 2a position as a rattler. In addition to thermoelectric properties, detailed processing routes have been investigated on the system.

Seebeck effect↗
NASA NTRS1995

Preparation and Some Properties of N-Type IrxCo1-xSB3 Solid Solutions

A number of studies have been recently devoted to the preparation and characterization of binary skutterudite materials to investigate their potential as advanced thermoelectric materials. These studies show that the potential of these binary skutterudite compounds is limited because of their relatively large thermal conductivity. In order to achieve high thermoelectric figure of merits for these materials, efforts should focus on thermal conductivity reduction. Recent results obtained on n-type CoSb3 and IrSb3 compounds have shown that n-type skutterudite materials might have a better potential for thermoelectric applications than p-type materials. The thermoelectric properties of p-type IrxCo1-xSb3 solid solutions have been recently investigated and it was shown that a substantial reduction in thermal conductivity was achieved. We prepared and measured some properties of n-type IrxCo1-xSb3 solid solutions. The samples are characterized by large Seebeck coefficient values and significantly lower thermal conductivity values than those measured on the binary compounds CoSb3 and IrSb3. A maximum ZT value of about 0.4 was obtained at a temperature of about 300(deg)C. Improvements in the figure of merit are possible in this system by optimization of the doping level.

Solid Solutions↗
NASA NTRS2004

Disordered Zinc in Zn4Sb3 with Phonon-Glass and Electron-Crystal Thermoelectric Properties

By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.

phases↗
NASA NTRS2014

Thermoelectric properties of Co(x)Ni(4-x)Sb(12-y)Sn(y) ternary skutterudites

Thermoelectric materials based on the skutterudite crystal structure have demonstrated enhanced performance (ZT greater than 1), along with good thermal stability and favorable mechanical properties. Binary skutterudites, with single and multiple fillers, have been intensively studied in recent years. Compared to binary skutterudites, the ternary systems have received less attention, e.g. Ni4Sb8Sn4. Ternary skutterudites are isoelectronic variants of binary skutterudites; cation substitutions appear to be isostructural to their binary analogues. In general, ternary skutterudites exhibit lower thermal conductivity. Ternary systems of Ni4Bi8Ge4, Ni4Sb8Ge4, and Ni4Sb8Sn4 were investigated using combined solidification and sintering steps. Skutterudite formation was not achieved in the Ni4Bi8Ge4 and Ni4Sb8Ge4 systems; skutterudite formation occurred in Ni4Sb8Sn4 system. P-type material was achieved by Co substitution for Ni. Thermoelectric properties were measured from 298 K to 673 K for Ni4Sb8Sn4, Ni4 Sb7Sn5 and Co2Ni2Sb7Sn5. N-type Ni4Sb8Sn4 exhibit the highest figure of merit of 0.1 at 523 K.

Seebeck Effect↗
NASA NTRS1998

Cooling device featuring thermoelectric and diamond materials for temperature control of heat-dissipating devices

A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, heat flows from the heat-dissipating device into the heat-conducting substrate, where it is spread out over a relatively large area. A thermoelectric cooling material (e.g., a Bi.sub.2 Te.sub.3 -based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. Application of electrical power to the thermoelectric material drives the thermoelectric material to pump heat into a second heat-conducting substrate which, in turn, is attached to a heat sink.

Vandersande, Ian W.↗
NASA NTRS1988

Boron Carbides As Thermo-electric Materials

Report reviews recent theoretical and experimental research on thermoelectric materials. Recent work with narrow-band semiconductors demonstrated possibility of relatively high thermoelectric energy-conversion efficiencies in materials withstanding high temperatures needed to attain such efficiencies. Among promising semiconductors are boron-rich borides, especially boron carbides.

Wood, Charles↗
NASA NTRS2012

New Technology for Microfabrication and Testing of a Thermoelectric Device for Generating Mobile Electrical Power

Thermoelectric (TE) power generation is an increasingly important power generation technology. Major advantages include: no moving parts, low-weight, modularity, covertness/silence, high power density, low amortized cost, and long service life with minimum or no required maintenance. Despite low efficiency of power generation, there are many specialized needs for electrical power that TE technologies can uniquely and successfully address. Recent advances in thermoelectric materials technology have rekindled acute interest in thermoelectric power generation. We have developed single crystalline n- and p- type PbTe crystals and are also, developing PbTe bulk nanocomposites using PbTe nano powders and emerging filed assisted sintering technology (FAST). We will discuss the materials requirements for efficient thermoelectric power generation using waste heat at intermediate temperature range (6500 to 8500 K). We will present our recent results on production of n- and p- type PbTe crystals and their thermoelectric characterization. Relative characteristics and performance of PbTe bulk single crystals and nano composites for thermoelectric power generation will be discussed.

Prasad, Narasimha S.↗
NASA NTRS1996

Growth and Some Properties of Cr(sub 11)Ge(sub 19)

Cr(sub 11)Ge(sub 19) belongs to a large family of materials known as the Nowtny chimney-ladder compounds, some of which were recently proposed as advanced thermoelectric materials because of their low thermal conductivity related to their relatively complex crystal structure. In order to assess the potential of the compound Cr(sub 11)Ge(sub 19) for thermoelectric applications, we grew large single crystals of this peritectic compound by a vertical gradient freeze technique and measured the thermoelectric properties of the crystals.

Nowotny chimney-ladder compounds thermoelectric ma↗
NASA NTRS1998

Some Properties of Re(sub 2)Te(sub 5) based Materials

One of the new approaches for developing thermoelectric materials with superior figures of merit is to look at materials which can be referred to as 'rattling' semiconductors.

coefficient values thermal conductivity electrical↗