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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Effects of strain and defects on the topological properties of HfTe 5

Manipulating topological states is a topic of vigorous research. However, the impact of such topological phase transitions on the quasiparticle dynamics remains elusive. Here, in this work, we present the effects of a transition from a strong to weak topological insulator in HfTe 5 as a function of Te vacancy concentration. We observed a significant transition from distinct sharp surface states and Dirac crossing to a Fermi-liquid-like quasiparticle state in which these surface-localized features are heavily suppressed. Additionally, by inducing the same effect through applied uniaxial stress, we demonstrate that changes in the lattice constants play the foremost role in determining the electronic structure, self-energy, and topological states of HfTe 5 . Our results demonstrate the possibility of using both defect chemistry and strain as control parameters for topological phase transitions and associated many-body physics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Hydrodynamic and Ballistic Transport over Large Length Scales in GaAs/AlGaAs

We study hydrodynamic and ballistic transport regimes through nonlocal resistance measurements and high-resolution kinetic simulations in a mesoscopic structure on a high-mobility two-dimensional electron system in a GaAs/AlGaAs heterostructure. We evince the existence of collective transport phenomena in both regimes and demonstrate that negative nonlocal resistances and current vortices are not exclusive to only the hydrodynamic regime. Here, the combined experiments and simulations highlight the importance of device design, measurement schemes, and one-to-one modeling of experimental devices to demarcate various transport regimes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Mitigation of the internal p-n junction in CoS 2 -contacted FeS 2 single crystals: Accessing bulk semiconducting transport

Pyrite FeS 2 is an outstanding candidate for a low-cost, nontoxic, sustainable photovoltaic material, but efficient pyrite-based solar cells are yet to materialize. Recent studies of single crystals have shed much light on this by uncovering a p-type surface inversion layer on n-type (S-vacancy doped) crystals, and the resulting internal p-n junction. This leaky internal junction likely plays a key role in limiting efficiency in pyrite-based photovoltaic devices, also obscuring the true bulk semiconducting transport properties of pyrite crystals. Here, we demonstrate complete mitigation of the internal p-n junction in FeS 2 crystals by fabricating metallic CoS 2 contacts via a process that simultaneously diffuses Co (a shallow donor) into the crystal, the resulting heavy n doping yielding direct Ohmic contact to the interior. Low-temperature bulk transport studies of controllably Co- and S-vacancy doped semiconducting crystals then enable a host of previously inaccessible observations and measurements, including determination of donor activation energies (which are as low as 5 meV for Co), observation of an unexpected second activated transport regime, realization of electron mobility up to 2100 cm 2 V –1 s –1 , elucidation of very different mobilities in Co- and S-vacancy-doped cases, and observation of an abrupt temperaturedependent crossover to bulk Efros-Shklovskii variable-range hopping, accompanied by an unusual form of nonlinear Hall effect. Aspects of the results are interpreted with the aid of first-principles electronic structure calculations on both Co- and S-vacancy-doped FeS 2 . Furthermore, this work thus demonstrates unequivocal mitigation of the internal p-n junction in pyrite single crystals, with important implications for both future fundamental studies and photovoltaic devices

36 MATERIALS SCIENCE↗
DOE OSTI2021

Growth, characterization, and Chern insulator state in MnBi 2⁢ Te 4 via the chemical vapor transport method

As the first intrinsic antiferromagnetic topological insulator, MnBi 2 Te 4 has provided a platform to investigate the interplay of band topology and magnetism as well as the emergent phenomena arising from such an interplay. Here we report the chemical-vapor-transport (CVT) growth and characterization of MnBi 2 Te 4 , as well as the observation of the field-induced quantized Hall conductance in 6-layer devices. Through comparative studies between our CVT-grown and flux-grown MnBi 2 Te 4 via magnetic, transport, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy measurements, we find that CVT-grown MnBi 2 Te 4 is marked with higher Mn occupancy on the Mn site, slightly higher Mn Bi antisites, smaller carrier concentration, and a Fermi level closer to the Dirac point. Furthermore, a 6-layer device made from the CVT-grown sample shows by far the highest mobility of 2500 cm 2 V s in MnBi 2 Te 4 devices with the quantized Hall conductance appearing at 1.8 K and 8 T. Furthermore, our study provides a route to obtain high-quality single crystals of MnBi 2 Te 4 that are promising to make superior devices and realize emergent phenomena, such as the layer Hall effect and quantized anomalous Hall effect, etc.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Carrier properties of Bi(111) grown on mica and Si(111)

A comparison is presented between properties of Bi(111) films grown by Stranski-Krastanov epitaxy on Si(111) 7 × 7 and by van der Waals epitaxy on mica substrates. Thin film morphologies and electronic transport properties of Bi(111) films of variable thickness are investigated for each growth method. Atomic force micrographs for Bi(111) films on mica reveal clearly defined triangular regions consisting of layered steps with height 0.4 nm, corresponding to the Bi(111) bilayer height. Variable-temperature electronic transport measurements show the existence of a quantum confinement-induced energy gap in the film interiors, resulting in a semimetal-to-semiconductor transition. Magnetotransport analysis in a three-carrier model including metallic electrons in surface states and electrons and holes in the films' interiors provides a detailed study of densities, mobilities, and mean-free paths of the three carrier types. Further, improved electronic transport properties are found in Bi(111) films of higher thickness on mica compared to on Si(111), a likely result of the largely strain-free van der Waals epitaxial growth.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Charge Correlations in Cuprate Superconductors

High-temperature superconductivity, with transition temperatures up to ≈134 K at ambient pressure, occurs in layered cuprate compounds. The conducting CuO 2 planes, which are universally present, are responsible for the superconductivity but also show a disposition to other competing states including spin and charge order. Charge-density-wave (CDW) order appears to be a universal property of cuprate superconductors. It has been studied via a multitude of probes including X-ray and neutron scattering, nuclear magnetic resonance, scanning probe techniques, electronic transport, and quantum oscillations. Here, we review the microscopic properties of the CDW order. We discuss the nature of the ordered state, that is, its symmetry and microscopic structure. Furthermore, we show how the CDW order is related to quenched disorder, host structure, symmetry breaking perturbations, and magnetic fields. Here, we also describe measurements of dynamic collective charge excitations that are closely related to the quasi-static CDW order. Finally, we highlight some of the debated issues in the field, including the origin of the CDW order, the relationship to spin order, and the nature of the spatial CDW correlations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Exploring Nontrivial Topological Superconductivity in 2M-WS2 for Topological Quantum Computation

This project has two main research goals: (1) growing the high-quality two-dimensional (2D) 2M-pahse WS 2 (2M-WS 2 ) single crystals and identifying clear signatures of the unconventional superconductivity in the 2M-WS 2 ; and (2) establishing the layer-dependence of the Majorana zero mode in the 2M-WS 2 down to the monoatomic layer limit. These goals were planned to be achieved by growing high-quality and large-scale 2M-WS 2 single crystals and transferring their thin layers onto different substrates for the proposed measurements. The layer-dependent unconventional superconductivity in 2M-WS 2 were systematically studied by different techniques, including transport measurements (charge, thermal and spin), scanning tunneling microscopy and spectroscopy (STM/S), angle-resolved photoemission spectroscopy (ARPES), and theoretical calculations. The research team is comprised of researchers from University of Wyoming (UW) and three DOE National Laboratories (DOE NLs), including Argonne National Laboratory (ANL), Lawrence Berkeley National Laboratory (LBNL) and Sandia National Laboratories (SNL), with complete and complementary expertise: PI Tian: Handling 2D materials, nanofabrication, nanodevices, and quantum transport; Co-Is: Ackerman and Leonard: van der Waals material crystal growth and handling; Chien: Nanoimaging with STM/S; and Tang: Magnetic measurements and charge and thermal transport; National lab collaborators (NLs): Guisinger (ANL): STM/S and nanoimaging; Mo and Rotenberg (LBNL): ARPES and nano ARPES (nARPES); Lu (SNL): Quantum information science, quantum transport, and nanofabrication; and Baczewski (SNL): Theoretical modeling and calculations.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Parametric study of STOL short-haul transport engine cycles and operational techniques to minimize community noise impact

The effect of aircraft operational techniques in the terminal area on community noise impact of future short haul aircraft was investigated. Aircraft equipped with mechanical flap (MF) and aircraft with externally blown flap (EBF) were used to study the noise impact at four U.S. airports. The four airports were: (1) Hanscom Field (Boston), (2) Washington National (D.C.), (3) Midway (Chicago) and (4) Orange County (California). With the exception of Washington National (D.C.), the study showed that a reduction of approximately 40 percent in the number of people highly annoyed can be obtained by using the recommended operational techniques. The evaluation procedures and methodology developed in the study represent an advance in acoustical state-of-the-art and provide an effective and useful tool for determining aircraft noise impact on the airport community.

Source record↗
NASA NTRS1978

Growth of single crystals by vapor transport in zero-gravity environment, ground-based experiments

Mass and heat transfer phenomena associated with the growth of single crystals by chemical vapor transport reactions were investigated. In this technique, a gaseous transport agent reacts with the solid source material to form exclusively gaseous products. The gas phase species migrate from the source to the condensation zone of the closed reaction ampoule where the reverse reaction occurs with formation of single crystals. The necessary concentration gradient is achieved by means of a temperature gradient.

Wiedemeier, H.↗
NASA NTRS1963

Apollo Master Spacecraft Specification

The ultimate objective of this project is to land men on the surface of the moon and return the men safely to earth. The objective of this document is to define the design approaches and operational techniques for transporting a three-man crew to the moon and returning them to earth.

Source record↗
NASA NTRS1983

Tape/head interface study

Existing high energy tapes, high track density heads, and transport guidance techniques were evaluated and characterized to enable these technologies to be employed in future spacecraft recorders with high confidence. The results of these study efforts demonstrated tracking accuracy tape and head density that will support spacecraft recorders with data rates of a minimum of 150 Mbps and storage capacities ranging from 10 to the 10th to 10 to the 11th bits. Seven high energy tapes of either .25 in width, 1.00 in width, or both, were tested. All tapes were tested at the same speed (30 ips) and the same packing density (33 KBI). The performance of all 1 in tapes was considered superior.

Source record↗
NASA NTRS1999

Low Temperature Photoluminescence of PVT Grown ZnSe and ZnSeTe

ZnSe and ZnSeTe single crystals were grown by physical vapor transport (PVT) technique horizontally and vertically. The grown ZnSe and ZnSeTe single crystals were characterized by low temperature photoluminescence at 5 to 10 K using the 3.4 eV emission of an argon laser. The intensity of the sharp near band edge defect lines at 2.799, 2.783 eV and the intrinsic free exciton line at 2.802 eV were mapped on various crystal surfaces with different orientations to the gravitational field. The results show the effects of gravity vector orientation on the defect segregation. Comparison of the photoluminescence spectra of the ZeSe crystal before and after annealing in the Zn vapor shows that the 2.783 eV line of ZnSe crystal is related to the zinc vacancy. The photoluminescence spectra of the ternary ZnSeTe crystal were characterized by a single broad band from 2.2 to 2.4 eV, with a Full Width at Half Maximum (FWHM) of about 100 meV. The temperature dependence of the peak position and intensity were determined from 7 to 150 K.

Wang, Ling Jun↗
NASA NTRS1998

Contactless Growth of ZnSe Single Crystals by Physical Vapor Transport

ZnSe crystals were grown by self-seeded physical vapor transport (PVT) technique in the horizontal configuration. The source materials were heat treated by H2 reduction to remove the oxide followed by baking under dynamic vacuum to adjust the source composition toward that of congruent sublimation. Contactless growth of ZnSe single crystals have been performed consistently using three different source materials. The crystals grew away from the wall during the later stage of the growth with large (110) facets tend to align parallel to the gravity direction. The Scanning Electron Micrography (SEM) micrographs and the Atomic Force Microscope (AFM) images showed that large (110) terraces and steps dominate the as-grown facets. The measured residual gas pressures in the processed ampoules agree well among various source materials and the major components were CO and H2. No preferred growth direction was found. The one-dimensional diffusion model on the mass flux of a multi-species PVT system was employed to analyze the conditions for contactless growth. The calculated thermal profile for supersaturation is very close to the thermal profile measured inside the empty furnace bore in the region of contactless growth. The effects of convective flows in the vapor phase inside the ampoule on the growth processes are discussed.

Su, Ching-Hua↗
NASA NTRS1999

Vortex-State Complex Hall Conductivity of Superconducting YBa2Cu3O7 Epitaxial Films at Radio Frequencies

The first intermediate-frequency measurements of the vortex-state complex Hall conductivity \sigma_xy of YBa_2CU_3O_7 superconducting epitaxial films are reported. A direct transport measurement technique from dc to 7 MHz was used. The results are analyzed in terms of a phenomenological model, generalized from that for the dc Hall conductivity, with the assumptions that: 1) the sign reversal in the vortex-state Hall conductivity is associated with the different carrier densities within and far away from the vortex cores; 2) the Drude approximation Is applicable; and 3) the anomalous sign reversal occurs in the flux-flow Limit. The temperature, frequency, and magnetic field (B) dependencies of our \sigma_xy data are in good agreement with the model. The B-dependence of \sigma_xy reveals that both vortices (\sigma_xyAv \propto BA-1) and quasiparticles (sigma_xyAq \propto B) contribute to the vortex-state Hall conduction. The magnitude of the real part of \sigma_xy, \sigma_xyA\prime, is in good agreement with our model, while that of the imaginary part, \sigma_xyA\prime \prime, is significantly Luger than the theoretical prediction. This may be attributed to the unconventional electronic structures in the vortex core of cuprate superconductors with d-wave or mixed pairing symmetries.

Beam, D. A.↗
NASA NTRS2003

Photoluminescence of CdTe Crystals Grown by Physical-Vapor Transport

High-quality CdTe crystals with resistivities higher than 10(exp 8) omega cm were grown by the physical-vapor transport (PVT) technique. Indium, aluminum, and the transition-metal scandium were introduced at the nominal level of about 6 ppm to the source material. Low-temperature photoluminescence (PL) has been employed to identify the origins of PL emissions of the crystals. The emission peaks at 1.584 eV and 1.581 eV were found only in the In-doped crystal. The result suggests that the luminescence line at 1.584 eV is associated with Cd-vacancy/In complex. The intensity of the broadband centered at 1.43 eV decreases strongly with introduction of Sc.

Palosz, W.↗