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An externally exposed V dopant imposes H-atom uptake at the polyoxotungstate surface and dictates the proton–coupled electron transfer mechanism.
Phase coexistence in nanoscale electrochemical random-access memory (ECRAM) has recently been demonstrated to enable both information storage and extraordinary reconfigurability. These proof-of-principle demonstrations have left the mechanistic details of such a process unresolved. Particularly, the mechanisms that stabilize the multiple phases, and the underlying processes behind sustained memory retention, remain unclear, and are necessary to design such devices. Here we report microscale ECRAM devices composed of VO𝑥, which enables us to directly probe the active region in an operando fashion using optical techniques. Using Raman mapping, we show the phase coexistence driven by the electrochemical injection of O vacancies to be spatially uniform (i.e., with no filaments). The stability was observed to be unusually long, with 1% loss over 14 years in ambient conditions. First-principles calculations of the oxygen vacancy formation energies in VO 𝑥 further support the thermodynamic coexistence of multiple VO 𝑥 phases and clarify the origin of the observed long-term retention in the ECRAM devices. Further, we demonstrate single devices that can be voltage programmed to exhibit synaptic, neuronal, and reconfigurable logic gate functionalities. Furthermore, we not only uncover the phase coexistence mechanism that may help device design, but also demonstrate the circuit-level applications of reconfigurability.
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V 50/V 51 abundance ratios in chondrite, terrestrial diabase standard W-1 and reagent V
Ti and V sesquioxides and TiO-VO solid solutions crystallography and defect chemistry over entire range of compositions
Superconducting transition temperature variation in bcc region of Ti-Nb-V ternary alloys measured as function of valence electrons and composition
Solubilities and heats of solutions of Mo, W, V, Ti and Zr in liquid K
Mo, W, V, Ti and Zr solubilities in liquid K
V and Cu emission spectrographic analyses in chondrite types, noting distribution patterns between groups based on meteorite chemical fractionation mechanisms
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Hot press butt welds were made in 0.5 in. diameter bar, and roll lap welds were made in 0.060 in. thick sheet of Ti-6A1-4V. For hot press welds made after auto-vacuum cleaning at 1800 F for 2 hours, weld strength and ductility equaled the parent metal properties. Only 5 minutes of pressing time were needed at 1800 F and 200 psi to make the hot press welds. Roll welds were made in sheet at 1750 F with only 10 percent deformation. The welds in the bar and sheet were metallurgically indistinguishable from the parent material.