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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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125 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower-voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 um or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV-class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Scientific/Technical Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 µm or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

20KV↗
DOE OSTI2024

NiGa 2 O 4 interfacial layers in NiO/Ga 2 O 3 heterojunction diodes at high temperature

NiO/Ga 2 O 3 heterojunction diodes have attracted attention for high-power applications, but their high temperature performance and reliability remain underexplored. Here, we report the time evolution of the electrical properties in the widely studied p-NiO/n-Ga 2 O 3 heterojunction diodes and formation of NiGa 2 O 4 interfacial layers at high temperatures. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO–Ga 2 O 3 interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO–Ga 2 O 3 interface forms a ternary compound at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa 2 O 4 layer between NiO and Ga 2 O 3 . First-principles defect calculations find that NiGa 2 O 4 shows low p-type intrinsic doping and hence can serve to limit electric field crowding at the interface. Vertical NiO/ Ga 2 O 3 diodes with intentionally grown 5 nm thin spinel-type NiGa 2 O 4 interfacial layers show an excellent device ON/OFF ratio of >10 10 (± 3 V), V ON of ~1.9 V, and increased breakdown voltage of ~1.2 kV for an initial unoptimized 300 lm diameter device. These p–n heterojunction diodes are promising for high-voltage, high temperature applications.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2026

Ultrafast vertical photoconductive intrinsic diamond switch with high current (17.1 A at 1 kV)

Here, this Letter reports on a vertical, bulk-conducting photoconductive semiconductor switch (PCSS) fabricated on an intrinsic Type IIa single-crystal diamond substrate. Under near-bandgap excitation at 225 nm with a 20 μ J pulse, a strong photocurrent response of 17.1 A at 1 kV DC bias magnitude is obtained by (i) tuning the optical trigger wavelength to the “matched-absorption” window (224–235 nm) near the band edge, where the optical penetration depth becomes comparable to the 500 μ m substrate thickness, and (ii) choosing the bias polarity ensuring electron-dominant conduction, given that electrons have a higher mobility than holes in diamond. The PCSS has an area-normalized responsivity of 54.2 mA W −1 cm −2 and an effective on-resistance of 8.48 Ω, with a fast 90%–10% transient fall time of 25 ns, attributed to carrier sweep-out. These results support vertical, bulk-conducting intrinsic diamond PCSS as a promising platform for high-power optical switching and provide new insight into intrinsic photoconductivity in diamond.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Assessing Strain Rate Sensitivity of Nanotwinned Al–Zr Alloys through Nanoindentation

Nanotwinned metals have exhibited many enhanced physical and mechanical properties. Twin boundaries have recently been introduced into sputtered Al alloys in spite of their high stacking fault energy. These twinned Al alloys possess unique microstructures composed of vertically aligned Σ3(112) incoherent twin boundaries (ITBs) and have demonstrated remarkable mechanical strengths and thermal stability. However, their strain rate sensitivity has not been fully assessed. A modified nanoindentation method has been employed here to accurately determine the strain rate sensitivity of nanotwinned Al–Zr alloys. The hardness of these alloys reaches 4.2 GPa while simultaneously exhibiting an improved strain rate sensitivity. The nanotwinned Al–Zr alloys have shown grain size-dependent strain rate sensitivity, consistent with previous findings in the literature. This work provides insight into a previously unstudied aspect of nanotwinned Al alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Resilient Control of Networked Microgrids Using Vertical Federated Reinforcement Learning: Designs and Real-Time Test-Bed Validations

Improving system-level resiliency of networked microgrids against adversarial cyber-attacks is an important aspect in the current regime of increased inverter-based resources (IBRs). To achieve that, this paper contributes in designing a hierarchical control layer, in conjunction with the existing control layers, resilient to adversarial attack signals. Considering model complexities, unknown dynamical behaviors of IBRs, and privacy issues regarding data sharing in multi-party-owned microgrids, designing such a control layer is non-trivial. Here, to tackle these issues, a novel federated reinforcement learning (Fed-RL) method is proposed. To grasp the interconnected dynamics of networked microgrids, the paper develops Federated Soft Actor-Critic (FedSAC) algorithm following the vertical structure of implementing Fed-RL. Next, utilizing the OpenAI Gym interface, we built a custom set-up in GridLAB-D/HELICS co-simulation platform, named Resilient RL Co-simulation (ResRLCoSIM), to train the RL agents with IEEE 123-bus benchmark comprising 3 interconnected microgrids. Finally, the learned policies in the simulation are transferred to the real-time hardware-in-the-loop (HIL) test-bed developed using the high-fidelity Hypersim platform. Finally, experiments show that the simulator-trained RL controllers achieve desirable performance with the test-bed platform, validating the minimization of the sim-to-real gap.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

T-Type Modular DC Circuit Breaker (T-Breaker) for Future DC Networks

The developed T-Type Modular DC Circuit Breaker (T-Breaker) technology offers an all-in-one solution to challenges in DC networks. This includes swift fault detection and protection, power transient stability, and power quality improvement, achieved through the utilization of wide bandgap (WBG) power semiconductors and energy storage devices. The T-Breaker not only facilitates rapid fault current detection and interruption but also implements fault current limiting through active insertion of storage devices or by operating WBG devices in the saturation region. Additionally, with the assistance of energy storage devices, potential overvoltage issues on power devices induced by control signal misalignment can be mitigated. The T-Breaker can be regulated to perform shunt current injection/absorption using the vertical arm and series voltage insertion via the horizontal arm, thereby enhancing DC system stability during voltage or load power fluctuation transients. The OSU team and Raytheon team actively worked together on designing, fabricating, assembling, and testing of two T-Breaker prototypes. The first prototype is rated at 1 kV, 500 A with half-bridge (unipolar) structure to validate the T-Breaker concept. The second prototype is rated at 20 kV, 50 A with full-bridge (bipolar) topology which can reach an efficiency of 99.977%, realize a power density of 60.2 MW/m3, and eliminate the 500-A fault current with a fault response time of around 20 µs. The prototypes show great feasibility of adopting this technology in multiple applications including electrified aircraft, super charging stations, data centers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2025

Revealing Phase Heterogeneity in Vertically Aligned Nanocomposites via Plan-View Electron Energy Loss Spectroscopy

Hydrogen utilization in clean energy technologies is challenged by limited storage and transport within materials, owing to the complex hydrogen kinetics at interfaces [1]. Understanding these interfacial mechanisms at the nanoscale is crucial for developing improved materials for hydrogen applications, particularly proton-conducting fuel cells (PCFCs). Vertically aligned nanocomposites (VANs) grown by pulsed laser deposition (PLD) offer a unique platform for investigating the interfacial effects on hydrogen transport due to their well-defined interfaces parallel to the direction of charge transport [2-4]. To investigate hydrogen transport, the two phases within the VANs were chosen as BaZr 0.9 Y 0.1 O 3-x (BZY), a known proton conductor, and Pr 0.1 Ce 0.9 O 2-x (PCO), a mixed ionic-electronic conductor [5]. This PCO-BZY VANs architecture allows the investigation of how the interface between a proton conductor and a mixed conductor influences hydrogen transport. However, because of the small size of hydrogen, it is difficult to discern the nature of its interactions with interfaces from bulk measurements at the macroscale, thus necessitating nanoscale measurements [6]. Electron energy loss spectroscopy (EELS) allows for nanometer-resolution probing of the local atomic structure and chemistry at the BZY/PCO interface. In this study, plan-view analysis of PCO-BZY VANs films was employed to characterize the structure and phase distribution of the VANs and investigate the interface between the nanostructures. The films were imaged using scanning electron microscopy (SEM) in the Hitachi S-4800 SEM, collecting secondary electron images using mixed upper and lower detectors. Then, plan-view transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) EELS were employed using a JEOL ARM300 microscope operated at 300kV with a Gatan K3 GIF Continuum detector to study the distribution of the BZY and PCO phases through the film. As a result, spectrum images were acquired at a dispersion of 0.18eV per channel and denoised afterward by principal component analysis (PCA) method.

Griffin, Elizabeth [Northwestern University, Evans↗
DOE OSTI2025

High-Spectral Resolution Lidar (HSRL) Instrument Handbook

High-spectral-resolution lidar (HSRL) systems provide vertical profiles of optical depth, backscatter cross-section, depolarization, and backscatter phase function. All HSRL measurements are calibrated by reference to molecular scattering, which is measured at each point in the lidar profile. Like the Raman lidar (RL), but unlike simple backscatter lidars such as the micropulse lidar (MPL), this enables the HSRL to measure backscatter cross-sections and optical depths without prior assumptions about the scattering properties of the atmosphere. The depolarization observations allow robust discrimination between ice and water clouds. Rigorous error estimates can be computed for all measurements. A very narrow angular field of view reduces multiple scattering contributions. The small field of view, coupled with a narrow optical bandwidth, nearly eliminates noise due to scattered sunlight. The laser transmitter is a diode-pumped, frequency-doubled Nd:YAG laser. Narrow-band, single-frequency operation is provided by injection seeding with a single-frequency, cw-diode-pumped diode laser. The main laser cavity is maintained in resonance with the seed laser by adjusting the cavity length to minimize the time between the Q-switch trigger and the emission of the laser pulse. The emission wavelength is tuned via temperature control of the seed laser crystal and is locked to line #1109 of the iodine absorption spectra. Locking is accomplished by minimizing the transmission through a 2-cm-long iodine absorption cell. Use of a high-repetition-rate laser and expansion of the transmitted beam through a 400-mm telescope reduces the transmitted energy density to eye-safe levels. It is possible to look directly into the output beam without hazard. The receiver and transmitter use the same afocal telescope, simplifying the maintenance of stable alignment of the transmitter and receiver although the angular FOV is only 100 μrad. The small FOV and the 4-kHz repetition rate also limit the near-field signal strength, making it possible to record continuous profiles that start at an altitude of ~100 m and extend to 30 km using photon counting detectors. The small FOV also suppresses multiple scattering contributions.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2022

High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control

This project studied and implemented methods to form GaN p-n diodes using selective area regrowth to achieve selective area doping. Successful selective area doping of GaN p-n diodes is an enabling factor to realize more advanced devices such as vertical transistors. The general challenge to selective area regrowth of GaN is that the primary etch method, inductively coupled plasma (ICP), damages the crystal and causes high leakage when didoes are formed by regrowth on the etched surface. Our approach used low damage etch methods following ICP etch to remove crystal damage and reduced leakage in the regrown diode. This project demonstrated 1.6 kV etched-and-regrown GaN p-n diodes using planar (non-selective) regrowth and 840 V etched-and-regrown p-n diodes using selective area regrown. Enabling factors were use of a low-damage reactive ion etch (RIE) to remove damage caused by the primary ICP etch combined with a multi-step junction terminal extension (JTE) process. Deep level defect investigation quantitatively correlated a deep level near the middle of the GaN band gap with ICP etch-induced leakage that was greatly mitigated by using a slow, low damage RIE process. This research is economically feasible for commercialization because the processes used in this project, including substrate type and source, epitaxial crystal growth and fabrication techniques are all standard to the GaN semiconductor industry. The fundamental understanding and foundational ability to produce kV-class GaN p-n diodes through etch-and-regrowth provides a path to realize high power, high efficiency GaN power switches that can significantly outperform commercial devices for next-generation electrical power conversion and transmission systems.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Commissioning results of the BNL Alternating Gradient Synchrotron booster AC dipole

Here, an AC dipole has been installed in the AGS booster as part of polarized beam developments for the future Electron Ion Collider (EIC). This will allow preserving helion beam polarization through two intrinsic resonances during acceleration to an energy corresponding to |$Gγ$| = 10.5. AC dipoles can preserve polarization by forcing the beam to undergo large amplitude vertical betatron oscillations. These coherent oscillations cause all particles to sample the strong horizontal fields of quadrupoles, and result in a full spin flip. In preparation for the AC dipole being used for polarized helions, it was first commissioned with polarized protons. The proton extraction energy was raised to allow protons to cross $Gγ$ = 0 + $v_y$ = 4.8087. As an artifact of the experiment using polarized protons, the booster settings for bunch extraction interfered with the coherent oscillations and limited the maximum coherent amplitude. This interference will be well separated in the case of polarized helions. Polarized protons crossed the $Gγ$ = 0 + $v_y$ intrinsic resonance with a full spin flip through use of the AC dipole. Simulations of the resonance crossing using Zgoubi accurately predict the polarization relative to the coherent amplitude.

43 PARTICLE ACCELERATORS↗
DOE OSTI2025

Performance Evaluation of Vertical Federated Machine Learning Against Adversarial Threats on Wide-Area Control System: Preprint

Federated machine learning (FL) is gaining significant popularity to develop cybersecurity solutions in power grids because of its advanced capability to support decentralized data handing at local devices, its privacy preservation, and its low-bandwidth requirement. However, the evolving adversarial machine learning (AML) threats raise significant concerns for the cybersecurity of FL architectures. The FL-based split neural network (SplitNN) achieves high performance through the decentralized training of local neural network models while preserving data privacy across multiple entities. In this paper, we propose a methodology for evaluating the performance of a vertical FLbased anomaly detector against different types of AML attacks, including denial-of-service attacks, adversarial data injection attacks, and replay attacks on the trained local models deployed in the grid network. For a case study, we consider the modified IEEE 13-bus system, and we develop SplitNN-based binary and multiclass classification models to detect, locate, and identify different types of data integrity attacks on the volt-watt control with two pooling layers: maximum pooling and AvgPool. Our experimental results, computed through performance metrics, reveal that the severity of these AML attacks varies with the integrated pooling mechanism, the type of classification model, and the nature of the cyberattack. Further, the AML attacks negatively impacted the prediction time per sample for the pretrained SplitNN during the online testing.

adversarial threats↗
DOE OSTI2023

Characterization of Orography-Influenced Riming and Secondary Ice Production and Their Effects on Precipitation Rates Using Radar Polarimetry and Doppler Spectra (CORSIPP-SAIL)

The Characterization of Orography-Influenced Riming and Secondary Ice Production and Their Effects on Precipitation Rates Using Radar Polarimetry and Doppler Spectra (CORSIPP) project was conducted to help improve the understanding of precipitation formation in orographically influenced terrain. Special focus is put on the two processes of riming and secondary ice production and their external drivers. Two instruments, a polarimetric W-band simultaneous transmission simultaneous reception (STSR) Doppler cloud radar manufactured by Radiometer Physics GmbH (RPG, instrument type RPG-FMCW-94-DP), from now on named LIMRAD94, and the video in situ snowfall sensor (VISSS), were deployed at the U. S. Department of Energy Atmospheric Radiation Measurement (ARM) user facility’s Surface Atmosphere Integrated Field Laboratory (SAIL) site in Gothic, Colorado between November 2022 and June 2023 during the second SAIL winter. Note that the exact dates of data availability differ between the instruments. Both instruments arrived at Gothic on November 2, 2022, 09:20 local time. VISSS, described by Maahn et al., is equipped with two camera systems with telecentric lenses. The two cameras are at a 90° angle to each other. This configuration allows for size-independent measurements by capturing images of hydrometeors from two sides at a high frame rate of 250 Hz. With a minimum detection size of 200 μm, VISSS provides valuable insights into particle size, number, shape, complexity, and fall velocity. The VISSS was deployed on the grassland next to the ARM facility with the amazing help of the ARM employees on site. The setup started on November 2, 2022, and was finished on November 5, 2022, without major problems. VISSS measurements were started on November 6, 2022. LIMRAD94 was installed on a scaffolding platform near Orehouse (Gothic) on November 9, 2022, with the great help of RMBL staff. LIMRAD94 was mounted on a cold temperature scanner prototype. After a short test of the setup on November 9, 2022, the digital control of the scanner elevation stopped working for (at that time) unknown reasons. All attempts to resolve the problem failed. This malfunction made it impossible to operate LIMRAD94 in scanning mode. The scanner was then manually moved to zenith pointing mode and between November 10 and November 15, 2022, vertical observations for polarimetric calibration were performed. On November 15, 2022, after the polarimetric calibration was applied, the scanner was manually moved to 40° elevation with azimuthal view towards the Ka-band ARM Zenith Radar (KAZR) and measurements were continued at constant elevation. Investigation of the scanner malfunction on February 6, 2023, by Benn Schmatz revealed a disengagement between the cogwheel of the elevation motor and the cogwheel moving the scanner in elevation. This mechanical issue was temporarily solved by re-engaging the cogwheels. This made the scanner operational again for about four weeks, until mechanical force disengaged the cogwheels again on March 15, 2023. This repeated scanner failure remained undetected for about three weeks until April 8, 2023; during this time the scanner was stuck at 72° elevation. However, the radar software continued to produce data files falsely indicating that the scanner was still operational. After the scanner failure was noticed, scanning was stopped again, and we returned to constant elevation measurements. On May 15, 2023, the cogwheels of the elevation motor were secured with additional screws sent by the manufacturer. At some point in May, the cogwheels of the azimuth motor were also disengaged by mechanical force, which still allowed for range height indicator (RHI) but no plan position indicator (PPI) scans in the last weeks of the campaign. The azimuth motor was repaired in Germany after the end of the campaign. Throughout the campaign, RMBL and ARM staff kept the radar and the VISSS free of snow.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2026

Airports as Energy Nodes (ÆNodes) Project Report

Aviation is experiencing an influx of electrified aircraft in the advanced air mobility (AAM) space. The goal of Airports as Energy Nodes (ÆNodes) is to evaluate the impact of AAM and other advanced aircraft adoption growth on the electrical system of existing small to medium hub regional airports to better prepare them for the future while also enhancing resiliency and helping surrounding communities. AAM small passenger air service encompasses vertical takeoff and landing (VTOL), general aviation (GA) and flight training, and nine to thirty passenger conventional aircraft for regional air mobility (RAM) applications all of which include electrical, hybrid, or hydrogen powered varieties. Some challenges that ÆNodes is trying to address include how to utilize existing airport infrastructure to meet the energy needs of AAM growth in a way that is robust to aid in the growth of AAM while also leveraging any airport-hosted energy assets for the surrounding community in emergency situations.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Emerging Trends and Systemic Issues Influencing Today’s U.S. Electric Grid

With increasing shifts from vertically integrated to horizontally structured operations and from centralized to distributed electric power delivery, today’s electric power grid (the “grid”) operators and designers face the challenge of creating an architecture that accommodates a host of diverse requirements. The grid’s modes of operation must address concerns of reliability and stability, new deployments of renewable energy sources, threats from cyber-attacks and natural disasters, and increasingly distributed system operations. Grid modernization calls for a reliable, affordable, sustainable, agile, secure, and resilient grid. However, the modernization of the U.S. power grid is hampered by mounting complexity and diverging objectives from owners and operators and is consequently risky and fraught with potential missteps. Flawed architecture, design, and implementation will lead to stranded investments and lost opportunities. A principled approach to minimize risk and develop a robust grid of the future is to begin with a sound architecture for the grid to inform the design process. Architecture development starts with the context of influencing factors that provide constraints as well as driving goals. This report provides the context of emerging trends and cross-cutting systemic issues in the U.S. electric power grid and serves as a vital input for grid architecture development.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

WTK-LED: The WIND Toolkit Long-Term Ensemble Dataset

To satisfy a wide group of stakeholders across various wind energy disciplines, including but not limited to stakeholders in the distributed and utility scale wind industry, the new emerging airborne wind energy field, grid integration, power systems modeling, environmental modeling, and researchers in academia, and to close some of the gaps that current public datasets have, we aimed at developing an updated version of the meteorological WIND Toolkit, named WIND Toolkit Long-term Ensemble Dataset (WTK-LED), which is a meteorological dataset providing time series every 5 min and 2 km, including model uncertainty of wind speed at every modeling grid point so that users are provided with a range of possible wind speeds every 2 km. The data were produced using the Weather Research and Forecasting Model (WRF). The vertical grid used in WTK-LED includes many vertical layers in the atmospheric boundary layer to provide information of atmospheric quantities across the rotor layer of utility scale and distributed wind turbines. The WTK-LED includes: 1) Numerical simulations covering the continental United States, Alaska, and Hawaii, with high-resolution data being available for 3 years (2018-2020). 2) Climate simulations from Argonne National Laboratories covering the North American continent, including Alaska, Canada, and most of Mexico and the Caribbean Islands. These simulations complement the new WTK-LED to offer a 4-km dataset covering 20 years, from 2001-2020. 3) Specific long-term,high-resolution offshore simulations have been conducted separately for the US coasts, Hawaii, and the Great Lakes, leading to the 2023 National Offshore Wind data set. This report focuses on a description of the land-based WTK-LED for CONUS, Hawaii, and Alaska, for the 3-year 2-km/5-min dataset and the 20-year 4-km/hourly dataset, as well as the uncertainty quantification method. We also provide limited validation results. Based on our results to date, we suggest use cases and applications for each dataset of the WTK-LED.

17 WIND ENERGY↗
DOE OSTI2025

Nanoscale and Element-Specific Lattice Temperature Measurements Using Core-Loss Electron Energy-Loss Spectroscopy

Measuring nanoscale local temperatures, particularly in vertically integrated and multicomponent systems, remains challenging. Spectroscopic techniques like X-ray absorption and core-loss electron energy-loss spectroscopy (EELS) are sensitive to lattice temperature, but understanding thermal effects is nontrivial. This work explores the potential for nanoscale and element-specific core-loss thermometry by comparing the Si L2,3 edge’s temperature- dependent redshift against plasmon energy expansion thermometry (PEET) in a scanning TEM. Using density functional theory (DFT), time-dependent DFT, and the Bethe−Salpeter equation, we ab initio model both the Si L 2,3 and plasmon redshift. We find that the core-loss redshift occurs due to bandgap reduction from electron−phonon renormalization. Our results indicate that despite lower core-loss signal intensity compared to plasmon features, core-loss thermometry has key advantages and can be more accurate through standard spectral denoising. Specifically, we show that the Varshni equation easily interprets the core-loss redshift for semiconductors, which avoids plasmon spectral convolution for PEET in complex junctions and interfaces. We also find that core-loss thermometry is more accurate than PEET at modeling thermal lattice expansion in semiconductors, unless the specimen’s temperature-dependent dielectric properties are fully characterized. Furthermore, core-loss thermometry has the potential to measure nanoscale heating in multicomponent materials and stacked interfaces with elemental specificity at length scales smaller than the plasmon’s wave function.

Bethe–Salpeter equation↗