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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS2005

Electrical Characterization of Defects in SiC Schottky Barriers

We have been investigating the effect of screw dislocation and other structural defects on the electrical properties of SiC. SiC is a wide-bandgap semiconductor that is currently received much attention due to its favorable high temperature behavior and high electric field breakdown strength. Unfortunately, the current state-of-the-art crystal growth and device processing methods produce material with high defect densities, resulting in a limited commercial viability

Schnabel, C. M.↗

NASA NTRS2004

High-Temperature Solar Cell Development

The vast majority of satellites and near-earth probes developed to date have relied upon photovoltaic power generation. If future missions to probe environments close to the sun will be able to use photovoltaic power, solar cells that can function at high temperatures, under high light intensity, and high radiation conditions must be developed. For example, the equilibrium temperature of a Mercury surface station will be about 450 C, and the temperature of solar arrays on the proposed "Solar Probe" mission will extend to temperatures as high as 2000 C (although it is likely that the craft will operate on stored power rather than solar energy during the closest approach to the sun). Advanced thermal design principles, such as replacing some of the solar array area with reflectors, off-pointing, and designing the cells to reflect rather than absorb light out of the band of peak response, can reduce these operating temperature somewhat. Nevertheless, it is desirable to develop approaches to high-temperature solar cell design that can operate under temperature extremes far greater than today's cells. Solar cells made from wide bandgap (WBG) compound semiconductors are an obvious choice for such an application. In order to aid in the experimental development of such solar cells, we have initiated a program studying the theoretical and experimental photovoltaic performance of wide bandgap materials. In particular, we have been investigating the use of GaP, SiC, and GaN materials for space solar cells. We will present theoretical results on the limitations on current cell technologies and the photovoltaic performance of these wide-bandgap solar cells in a variety of space conditions. We will also give an overview of some of NASA's cell developmental efforts in this area and discuss possible future mission applications.

Landis, Geoffrey A.↗

NASA NTRS2008

Method for the growth of large low-defect single crystals

A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a uniquely designed crystal shape whereby the direction of rapid growth is parallel to a preferred crystal direction. By establishing several regions of growth, a large single crystal that is largely defect-free can be grown at high growth rates. This process is particularly suitable for producing products for wide-bandgap semiconductors, such as SiC, GaN, AlN, and diamond. Large low-defect single crystals of these semiconductors enable greatly enhanced performance and reliability for applications involving high power, high voltage, and/or high temperature operating conditions.

Powell, J. Anthony↗

NASA NTRS2013

Nano-Ceramic Coated Plastics

Plastic products, due to their durability, safety, and low manufacturing cost, are now rapidly replacing cookware items traditionally made of glass and ceramics. Despite this trend, some still prefer relatively expensive and more fragile ceramic/glassware because plastics can deteriorate over time after exposure to foods, which can generate odors, bad appearance, and/or color change. Nano-ceramic coatings can eliminate these drawbacks while still retaining the advantages of the plastic, since the coating only alters the surface of the plastic. The surface coating adds functionality to the plastics such as self-cleaning and disinfectant capabilities that result from a photocatalytic effect of certain ceramic systems. These ceramic coatings can also provide non-stick surfaces and higher temperature capabilities for the base plastics without resorting to ceramic or glass materials. Titanium dioxide (TiO2) and zinc oxide (ZnO) are the candidates for a nano-ceramic coating to deposit on the plastics or plastic films used in cookware and kitchenware. Both are wide-bandgap semiconductors (3.0 to 3.2 eV for TiO2 and 3.2 to 3.3 eV for ZnO), so they exhibit a photocatalytic property under ultraviolet (UV) light. This will lead to decomposition of organic compounds. Decomposed products can be easily washed off by water, so the use of detergents will be minimal. High-crystalline film with large surface area for the reaction is essential to guarantee good photocatalytic performance of these oxides. Low-temperature processing (<100 C) is also a key to generating these ceramic coatings on the plastics. One possible way of processing nanoceramic coatings at low temperatures (< 90 C) is to take advantage of in-situ precipitated nanoparticles and nanostructures grown from aqueous solution. These nanostructures can be tailored to ceramic film formation and the subsequent microstructure development. In addition, the process provides environment- friendly processing because of the aqueous solution. Low-temperature processing has also shown versatility to generate various nanostructures. The growth of low-dimensional nanostructures (0-D, 1-D) provides a means of enhancing the crystallinity of the solution-prepared films that is of importance for photocatalytic performance. This technology can generate durable, fully functional nano-ceramic coatings (TiO2, ZnO) on plastic materials (silicone, Teflon, PET, etc.) that can possess both photocatalytic oxide properties and flexible plastic properties. Processing cost is low and it does not require any expensive equipment investment. Processing can be scalable to current manufacturing infrastructure.

Cho, Junghyun↗

NASA NTRS2013

NASA Tech Briefs, October 2013

Topics include: A Short-Range Distance Sensor with Exceptional Linearity; Miniature Trace Gas Detector Based on Microfabricated Optical Resonators; Commercial Non-Dispersive Infrared Spectroscopy Sensors for Sub-Ambient Carbon Dioxide Detection; Fast, Large-Area, Wide-Bandgap UV Photodetector for Cherenkov Light Detection; Mission Data System Java Edition Version 7; Adaptive Distributed Environment for Procedure Training (ADEPT); LEGEND, a LEO-to-GEO Environment Debris Model; Electronics/Computers; Millimeter-Wave Localizers for Aircraft-to-Aircraft Approach Navigation; Impedance Discontinuity Reduction Between High-Speed Differential Connectors and PCB Interfaces; SpaceCube Version 1.5; High-Pressure Lightweight Thrusters; Non-Magnetic, Tough, Corrosion- and Wear-Resistant Knives From Bulk Metallic Glasses and Composites; Ambient Dried Aerogels; Applications for Gradient Metal Alloys Fabricated Using Additive Manufacturing; Passivation of Flexible YBCO Superconducting Current Lead With Amorphous SiO2 Layer; Propellant-Flow-Actuated Rocket Engine Igniter; Lightweight Liquid Helium Dewar for High-Altitude Balloon Payloads; Method to Increase Performance of Foil Bearings Through Passive Thermal Management; Unibody Composite Pressurized Structure; JWST Integrated Science Instrument Module Alignment Optimization Tool; Radar Range Sidelobe Reduction Using Adaptive Pulse Compression Technique; Digitally Calibrated TR Modules Enabling Real-Time Beamforming SweepSAR Architectures; Electro-Optic Time-to-Space Converter for Optical Detector Jitter Mitigation; Partially Transparent Petaled Mask/Occulter for Visible-Range Spectrum; Educational NASA Computational and Scientific Studies (enCOMPASS); Coarse-Grain Bandwidth Estimation Scheme for Large-Scale Network; Detection of Moving Targets Using Soliton Resonance Effect; High-Efficiency Nested Hall Thrusters for Robotic Solar System Exploration; High-Voltage Clock Driver for Photon-Counting CCD Characterization; Development of the Code RITRACKS; and Enabling Microliquid Chromatography by Microbead Packing of Microchannels.

Source record↗

NASA NTRSDate not supplied

Design of 1 kW Simplified Stirling Controller Using Capacitor-Based Power Factor Correction

Free-piston Stirling convertors hold potential for efficient, reliable thermal to electric power conversion, provided they are paired with a robust controller. This paper outlines work underway on a system-level optimization of a kW controller. Using simplified control and passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is improved through incorporating wide-bandgap gallium nitride (GaN) switches, and PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling space power concepts.

Stirling↗

NASA NTRSDate not supplied

Optimization, Design, and Demonstration of 1 kW Stirling Controller Using Capacitor-based Power Factor Correction

Free-piston Stirling convertors provide efficient, reliable thermal to electric power conversion, provided they are paired with a reliable controller. This paper outlines work underway on design concepts for kilowatt-class controllers. Using passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is maximized through incorporating wide-bandgap gallium nitride (GaN) switches, and passive PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling controllers.

Christopher Barth↗

DOE OSTI2020

Automotive Power Electronics and Electric Machine Thermal Management

The transition to modular and scalable electrified vehicle transportation requires technologies to improve power density within cost and reliability constraints to maximize vehicle platform flexibility. Key research challenges arise due to the limited packaging space, coolant distribution, electrical connections, and ambient temperatures. Challenges include thermal management for compact power-dense electric machines and the associated power electronics for power management within the vehicle. High-temperature silicon and wide-bandgap (WBG) based power electronics systems are of interest to enable compact and efficient electric drive systems. The higher temperatures present packaging challenges for thermal management and reliability. In this work, we provide an overview of research for thermal characteristics of materials, packages and thermal management approaches for enabling compact power dense automotive electric drive systems.

DIRECT ENERGY CONVERSION↗

DOE OSTI2022

Drivers for paralleled semiconductor switches

An apparatus includes a plurality of parallel-connected semiconductor switches (e.g., silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) or other wide-bandgap semiconductor switches) and a plurality of driver circuits having outputs configured to be coupled to control terminals of respective ones of the plurality of semiconductor switches and configured to drive the parallel-connected semiconductor switches responsive to a common switch state control signal. The driver circuits may have respective different power supplies, which may be adjustable. Respective output resistors may couple respective ones of the driver circuits to respective ones of the semiconductor switches. The output resistors may be adjustable.

Nojima, Geraldo↗

DOE OSTI2023

Power Electronics Thermal Management

The 2017 Electrical and Electronics Technical Team Roadmap [1] proposes aggressive research and development targets aimed at improving power electronics technology to enable the mass-market penetration of electric-drive vehicles. Achieving these aggressive targets will require a decrease in cost (year 2025 cost target: $2.70/kW) and an increase in power density (year 2025 power density target: 100 kW/L) as compared with current on-road technology. Replacing traditional silicon device-based components with more efficient and higher-temperature wide-bandgap (WBG) semiconductor device-based components will enable increased power density. However, meeting the power density target will also require innovative thermal management solutions to increase the heat fluxes dissipated and allow for compact electronics packaging. This project conducts research to develop new power electronics thermal management technologies to increase power density, enable high WBG temperature operation, and decrease cost. The performance (e.g., thermal resistance, pumping power) of the power electronics cooling technologies developed in this project are compared to the performance of current, on-road technology. One of the main challenges to achieving high power densities is associated with packaging high-temperature (up to 250 degrees C) WBG devices near lower-temperature-rated components (e.g., electrical boards and capacitors).

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2024

Power Electronics Thermal Management

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2024

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

The need for reliable bonded interface materials is critical to realize the performance benefits of wide-bandgap devices in power electronic modules, especially in operating temperatures greater than 150 degrees Celsius. In this paper, we investigate the thermomechanical performance of sintered copper (Cu) as a large-area attachment, bonded between Cu baseplates and active-metal-bonded substrates, under accelerated thermal shock (-40 degrees Celsius to 200 degrees Celsius) conditions. In the fabrication phase of the samples, we used different stencil patterns and found out that the grid and stripe patterns resulted in a better outgassing of the residual organics during the sintering process, thereby ensuring a substantially improved bond quality than a full-area print. The paste consisted of Cu microflakes and we performed sintering using a Budatec SP300 sintering press at 275 degrees Celsius with 15 MPa of bonding pressure for 5 minutes in a nitrogen atmosphere. Under accelerated experiments, we monitored the degradation of the sintered Cu bond in the samples through C-mode scanning acoustic microscope (C-SAM) images. To quantify the defect percentage in C-SAM images, we investigated image denoising techniques to exclude the pattern prints. Finally, we cross-sectioned a sample and obtained digital microscope images, which revealed adhesive fracture as the dominant failure mechanism.

ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2023

Minimizing Interfacial Recombination in 1.8 eV Triple‐Halide Perovskites for 27.5% Efficient All‐Perovskite Tandems

Abstract All‐perovskite tandem solar cells show great potential to enable the highest performance at reasonable costs for a viable market entry in the near future. In particular, wide‐bandgap (WBG) perovskites with higher open‐circuit voltage ( V OC ) are essential to further improve the tandem solar cells’ performance. Here, a new 1.8 eV bandgap triple‐halide perovskite composition in conjunction with a piperazinium iodide (PI) surface treatment is developed. With structural analysis, it is found that the PI modifies the surface through a reduction of excess lead iodide in the perovskite and additionally penetrates the bulk. Constant light‐induced magneto‐transport measurements are applied to separately resolve charge carrier properties of electrons and holes. These measurements reveal a reduced deep trap state density, and improved steady‐state carrier lifetime (factor 2.6) and diffusion lengths (factor 1.6). As a result, WBG PSCs achieve 1.36 V V OC , reaching 90% of the radiative limit. Combined with a 1.26 eV narrow bandgap (NBG) perovskite with a rubidium iodide additive, this enables a tandem cell with a certified scan efficiency of 27.5%.

14 SOLAR ENERGY↗

DOE OSTI2023

Thermal Disorder‐Induced Strain and Carrier Localization Activate Reverse Halide Segregation

The reversal of halide ions is studied under various conditions. However, the underlying mechanism of heat-induced reversal remains unclear. This work finds that dynamic disorder-induced localization of self-trapped polarons and thermal disorder-induced strain (TDIS) can be co-acting drivers of reverse segregation. Localization of polarons results in an order of magnitude decrease in excess carrier density (polaron population), causing a reduced impact of the light-induced strain (LIS – responsible for segregation) on the perovskite framework. Meanwhile, exposing the lattice to TDIS exceeding the LIS can eliminate the photoexcitation-induced strain gradient, as thermal fluctuations of the lattice can mask the LIS strain. Under continuous 0.1 W cm -2 illumination (upon segregation), the strain disorder is estimated to be 0.14%, while at 80 °C under dark conditions, the strain is 0.23%. However, in situ heating of the segregated film to 80 °C under continuous illumination (upon reversal) increases the total strain disorder to 0.25%, where TDIS is likely to have a dominant contribution. Therefore, the contribution of entropy to the system's free energy is likely to dominate, respectively. Various temperature-dependent in situ measurements and simulations further support the results. These findings highlight the importance of strain homogenization for designing stable perovskites under real-world operating conditions.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Thermal and Mechanical Design of a High-Voltage Power Electronics Package

This paper presents the thermal and mechanical design aspects of a power electronics package with 5-kV GaN devices. Through finite element analyses, we investigated the impact of different cooling configurations and device locations on the thermal performance and reliability of the package. We found that placing the devices closer to the direct bond copper substrate as opposed to a centered approach in the proposed double-sided cooling configuration resulted in improved heat dissipation. This approach also reduced the total number of attachment layers, thereby likely improving the reliability of the package. Furthermore, simulations revealed that the device location had a negligible impact on the thermomechanical behavior of the attachment layers, as they are more prone to the local coefficient of thermal expansion mismatch.

electronic packaging↗

DOE OSTI2021

Performance Evaluation and Loss Modeling of WBG Devices based on a Novel Double-Pulse Test Method for Current Source Inverter

Careful measurements of the power device characteristics are necessary to accurately estimate a power converter's losses and efficiency. The conventional double-pulse test (DPT) circuit is a well-known method to implement this laboratory characterization of power devices and power modules. However, the switching characteristics of a power device depend on the power electronics circuit in which it is connected as well as the power circuit's physical layout, in addition to the device's internal structure. Hence, the conventional DPT circuit configuration, which is tailored for a standard voltage-source inverter (VSI), is not well-suited for a current-source inverter (CSI). This paper demonstrates a previously-proposed CSI-based DPT measurement technique that is appropriate for normal CSI operation. The characteristics of SiC MOSFETs and series-connected SiC Schottky diodes used in a CSI are measured using this improved technique while taking temperature effects into account to yield more accurate loss predictions. The CSI losses, including the switching and conduction losses of SiC MOSFETs and SiC Schottky diodes, have been modeled using this approach. The total CSI losses and efficiency have been estimated based on the CSI DPT results and loss models.

42 ENGINEERING↗

DOE OSTI2023

Effects of Proton Irradiation on GaN Vacuum Electron Nanodiodes

Gallium nitride (GaN)-based nanoscale vacuum electron devices, which offer advantages of both traditional vacuum tube operation and modern solid-state technology, are attractive for radiation-hard applications due to the inherent radiation hardness of vacuum electron devices and the high radiation tolerance of GaN. Here, we investigate the radiation hardness of top-down fabricated n-GaN nanoscale vacuum electron diodes (NVEDs) irradiated with 2.5-MeV protons (p) at various doses. We observe a slight decrease in forward current and a slight increase in reverse leakage current as a function of cumulative protons fluence due to a dopant compensation effect. The NVEDs overall show excellent radiation hardness with no major change in electrical characteristics up to a cumulative fluence of 5E14 p/cm 2 , which is significantly higher than the existing state-of-the-art radiation-hardened devices to our knowledge. In conclusion, the results show promise for a new class of GaN-based nanoscale vacuum electron devices for use in harsh radiation environments and space applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2021

Thermal and Mechanical Design of a High-Voltage Power Electronics Package: Preprint

Thermal and mechanical design aspects of a power electronic package with 5-kV GaN devices are presented. Through finite element analyses, the impact of different cooling configurations and device location on the thermal performance and reliability of the package was investigated. It was found that placing the devices closer to the direct-bond-copper substrate as opposed to a centered approach in the proposed double-sided-cooling configuration resulted in improved heat dissipation. This approach also reduced the total number of attachment layers, thereby likely improving the reliability of the package. Furthermore, simulations revealed that the device location had a negligible impact on the thermomechanical behavior of the attachment layers, as they are more prone to the local coefficient of thermal expansion mismatch.

27 ARPA - Advanced Research Projects Agency-Energy↗