Facilitated Phase Transformation for Improved Performance of Earth‐Abundant Disordered Rocksalt Materials
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D Transition Metal Dichalcogenides (TMDs), particularly MoS2, are promising candidates for sub-10 nm Gate All Around (GAA) CMOS FETs. Salt-assisted Chemical Vapor Deposition (CVD) enable lateral MoS2 growth at atmospheric pressure and low temperatures. This work analyzes salt-based precursor-driven CVD-grown MoS2 FETs at various temperatures. MoS2 was grown using Ammonium Molybdate salt, sulfurized at 750∘C, and transferred onto p−Si3/SiO2 substrates. At room temperature, threshold voltage (VT) ranged from -35 V to -25 V, with a peak drain current of 1.2μA/μm. As temperature increased above 325K, VT shifted exponentially, and carrier mobility dropped significantly. At 400 K, the gate lost channel control, though gate leakage current remained low. These results are compared with non-salt-based MoS2 growth to assess salt precursor effects.Notice: This manuscript has been authored by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (https://www.energy.gov/doe-public-access-plan).
Ligand-passivated ErOCl nanocrystals have been synthesized using a non-hydrolytic sol–gel method. Anisotropic sintering of ErOCl nanocrystals enhances 2D chloride-ion diffusion along theabplane, yielding a promising candidate for halide batteries.
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A schematic for the preparation of a g-C 3 N 4 -CNT/S composite cathode for lithium–sulfur batteries.
Interfacial doping of conjugated polymers is enabled by sequentially casting phenothiazine-based redox-active polymeric ionic liquids with TFSI − counterions.
Upon repeated electrochemical doping and thermal annealing, regiorandom P3HT undergoes a disorder-to-order structural change.
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Abstract We derive a compact formula for the one-loop, bosonic string partition function of Euclideanized$$ {J}_3{\overline{J}}_3 $$ J 3 J ¯ 3 deformedAdS 3 with periodic Euclidean time as an integral transform of the partition function of the undeformed EuclideanizedAdS 3 . Such a deformation is interpretable as an irrelevant “single-trace$$ T\overline{T} $$ T T ¯ deformation” of the boundary. We will do this by first establishing a formal procedure to compute a worldsheet torus zero point function for an exactly marginal$$ J\overline{J} $$ J J ¯ deformation of a sigma model with U(1) L × U(1) R global symmetry. We then describe how this procedure is implemented on SL(2,R) sigma model and its Euclidean continuation. Finally, we describe the embedding of the deformed SL(2,R) torus amplitude into critical string theory and interpret the result as the leading perturbative contribution to the thermal partition function of the deformed theory.