Yield Improvement of SiV- Color Centers in Diamond via Silicon/Carbon Sequential Implantation.
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A high density electrical connector system is disclosed which may make use of first and second connector components. The first connector component has a first substrate with a first plurality of electrical feedthroughs and at least a first plurality of electrically conductive bond pads in communication with the first plurality of electrical feedthroughs. The second connector component has a second substrate with a second plurality of electrical feedthroughs and at least a second plurality of electrically conductive bond pads in communication with the second plurality of electrical feedthroughs. An electrical coupling subsystem is disposed between the first and second connector components and makes electrical contact between associated pairs of the first and second pluralities of electrically conductive bond pads. A plurality of fasteners may be used for clamping the first and second connector components in facing relationship.
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A method for producing a long length high temperature superconductor wire, includes providing a substrate, having a surface with a length of at least 50 meters and a width. The surface supports a biaxially textured high temperature superconducting layer and the biaxially textured high temperature superconducting layer has a length and a width corresponding to the length and width of the surface of the substrate. The method includes irradiating the biaxially textured high temperature superconductor layer with an ion beam impinging uniformly along the length and across the width of the biaxially textured high temperature superconductor layer to produce a uniform distribution of pinning microstructures in the biaxially textured high temperature superconductor layer.
Abstract not provided.