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At least 1,297 records · Page 72

Radiation defect dynamics in GaAs studied by pulsed ion beams

Gallium arsenide under ion bombardment at room temperature and above exhibits pronounced dynamic annealing that remains poorly understood. Here, we use a pulsed beam method to study radiation defect dynamics in GaAs in the temperature range of 20–100 °C irradiated with 500 keV Xe ions. Results show that, with increasing temperature, the defect relaxation time constant monotonically decreases from ~5.2 to ~0.4 ms. A change in the dominant dynamic annealing process occurs at a critical temperature of ~60 °C, as evidenced by a change in the activation energy. A comparison with the other semiconductors studied by the pulsed beam method (Si, Ge, and 4H-SiC) reveals that both the high-temperature activation energy and the temperature below which dynamic annealing becomes negligible scale with the melting point.

36 MATERIALS SCIENCE↗

Proof Testing Aluminum and Titanium Thin-Walled Tubes for Aerospace Applications

Proof testing aerospace components aids in verifying the structural integrity of flight hardware. This process is often an important step in the certification process for critical parts. Though proof testing is a common practice at NASA and in industry, there is often a need to understand better the effectiveness of proof testing pressure systems discovering cracklike flaws or defects. Often proof tests are used in requirements and in practice as technical rationale for screening critical defects in a part in lieu of performing a non-destructive inspection. The intent of this work is to define proof test failure envelopes for thin-walled tubes composed of two materials: aluminum and titanium. Both materials are common in aerospace thin-walled tubing applications which is why these were the materials chosen for this study. The fracture mechanics software NASGRO was used to perform a parametric study on the effect of defects in thin-walled tubes subjected to proof testing. For both materials, the parameters varied in the NASGRO analyses were aspect ratio, proof test pressure, thickness, diameter, and flaw multiplier. With each case defined as a through crack or failure, the results were then pulled into MATLAB in order to parse through the data and produce failure envelope plots. Failure envelopes were created by meshing a surface in between the minimum proof pressure failing data points. As expected, based on material properties, the plots indicated the aluminum material would fail at much lower proof tests than the titanium. The parametric data and failure envelopes may be used as general qualitative insight on the effectiveness of proof testing thin-walled tubes of similar alloys.

Leah B Davis↗

Bifurcation of avoided crossing at an exceptional point in the dispersion of sound and light in locally resonant media

The avoided crossing behavior in the interaction of propagating sound or light waves with resonant inclusions is analyzed using a simple model of an acoustic medium containing damped mass-spring oscillators, which is shown to be equivalent to the Lorentz oscillator model in the elementary dispersion theory in optics. Two classes of experimental situations dictating the choice in the analysis of the dispersion relation are identified. If the wavevector is regarded as the independent variable and frequency as a complex function of the wavevector, then the avoided crossing bifurcates at an exceptional point at a certain value of the parameter γβ -1/2 , where γ and β characterize the oscillator damping and interaction strength, respectively. This behavior is not observed if the wavevector is regarded as a complex function of frequency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ab-initio informed cluster dynamics simulation of self- and Xe diffusivity in uranium mononitride under irradiation

Uranium mononitride (UN) is one of the ceramic nuclear fuel alternatives to oxide fuels considered for light water reactor and advanced reactor designs, as it presents significant advantages such as high uranium density (better economics) and high thermal conductivity and melting point (increased safety). Self- and fission gas diffusivities need to be better understood, given that they influence key fuel performance phenomena like swelling and fission gas release. Recently, radiation enhanced diffusivity was investigated in UN by means of cluster dynamics simulations relying on empirical potential-based parameterizations, the reliability of which highly depends on the interatomic potential accuracy. Here, in this work, we refine this approach by determining, using ab-initio calculations, the properties of defect clusters containing vacancies, self-interstitials and Xe impurities. We also consider larger clusters than previous studies. The obtained dataset (formation enthalpies, entropies, and migration barriers) is used to parameterize a cluster dynamics model of mobile clusters, and to calculate the defect cluster concentrations under irradiation. This gives us access to the radiation enhanced self- and fission gas diffusivities. Although the resulting diffusivities are close to the values reported in the literature, we find important qualitative differences in the diffusion mechanisms. Capturing the correct mechanisms is crucial to properly describe the chemistry and fission rate dependence of the model.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

The Potential Energy Hotspot: Effects of Impact Velocity, Defect Geometry, and Crystallographic Orientation

In energetic materials, the localization of energy into “hotspots” is known to dictate the initiation of chemical reactions and detonation. Recent all-atom simulations have shown that more energy is localized as internal potential energy (PE) than can be inferred from the kinetic energy (KE) alone. The mechanisms associated with pore collapse and hotspot formation are known to depend on pore geometry and dynamic material response such as plasticity. Therefore, we use molecular dynamics (MD) simulations to characterize shock-induced pore collapse and the subsequent formation of hotspots in 1,3,5-triamino-2,4,6-trinitrobenzene (TATB), a highly anisotropic molecular crystal, for various defect shapes, shock strengths, and crystallographic orientations. We find that the localization of energy as PE is consistently larger than the KE in cases with significant plastic deformation. Additionally, an analysis of MD trajectories reveals the underlying molecular- and crystal-level processes that govern the effect of orientation and pore shape on PE localization. We find that the regions of highest PE relate to the areas of maximum plastic deformation, while KE is maximized at the point of impact. Comparisons against octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazocine (HMX) reveal less energy localization in TATB, which could be a contributing factor to the latter’s insensitivity.

36 MATERIALS SCIENCE↗

Superconductivity Behavior in Epitaxial TiN Films Points to Surface Magnetic Disorder

In this work we analyze the evolution of the normal and superconducting properties of epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of the residual resistivity, that becomes dominated by diffusive surface scattering for d ≤ 20 nm . At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such high-quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of approximately 10 12 cm –2 . Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Final Report: Preparation and Evaluation of N-Type CdSeTe and CdTe as an Absorber in Thin Film PV

The primary objective of this project was to demonstrate n-type CdTe and CdSeTe films prepared by in-situ doping methods using pre-doped source material. Our goal was to achieve electron density (>10 17 cm -3 ) and lifetime (>10 ns) in n-type CdTe and CdSeTe films. The focus was on indium as the dopant, as it is suitable for incorporation during melt growth of CdTe. It was thought that indium doped bulk crystals might exhibit self compensation and high resistivity, so post-growth annealing studies were planned to manipulate crystal stoichiometry, defects and electrical activity. Single crystals of CdTe:In and CdSe 0.4 Te 0.6 :In, with target In concentration 10 19 cm -3 , were grown by the vertical Bridgman crystal growth method at Washington State University (WSU). Incorporation of the intended In into the crystals was ~25%-30%, (2.5-3) ×10 18 cm -3 , according to glow discharge mass spectrometry (GDMS). Carrier concentration in CdTe:In crystals were very low until after a Cd anneal, at which point the concentration reached 8 ×10 17 cm -3 (~27% activation) according to Hall effect and time resolved photoluminescence (TRPL). CdSeTe:In, on the other hand, had ~100% carrier activation with no post-growth treatments, resulting in ~3×10 18 cm -3 carriers with a lifetime of 1.5 ns, near the radiative limit for this material.

14 SOLAR ENERGY↗

Modeling the Activity of Single Genes

The central dogma of molecular biology states that information is stored in DNA, transcribed to messenger RNA (mRNA) and then translated into proteins. This picture is significantly augmentated when we consider the action of certain proteins in regulating transcription. These transcription factors provide a feedback pathway by which genes can regulate one another's expression as mRNA and then as protein. To review: DNA, RNA and proteins have different functions. DNA is the molecular storehouse of genetic information. When cells divide, the DNA is replicated, so that each daughter cell maintains the same genetic information as the mother cell. RNA acts as a go-between from DNA to proteins. Only a single copy of DNA is present, but multiple copies of the same piece of RNA may be present, allowing cells to make huge amounts of protein. In eukaryotes (organisms with a nucleus), DNA is found in the nucleus only. RNA is copied in the nucleus then translocates(moves) outside the nucleus, where it is transcribed into proteins. Along the way, the RNA may be spliced, i.e., may have pieces cut out. RNA then attaches to ribosomes and is translated to proteins. Proteins are the machinery of the cell other than DNA and RNA, all the complex molecules of the cell are proteins. Proteins are specialized machines, each of which fulfills its own task, which may be transporting oxygen, catalyzing reactions, or responding to extracellular signals, just to name a few. One of the more interesting functions a protein may have is binding directly or indirectly to DNA to perform transcriptional regulation, thus forming a closed feedback loop of gene regulation. The structure of DNA and the central dogma were understood in the 50s; in the early 80s it became possible to make arbitrary modifications to DNA and use cellular machinery to transcribe and translate the resulting genes; more recently, genomes (i.e., the complete DNA sequence) of many organisms have been sequenced. This large-scale sequencing began with simple organisms, viruses and bacteria, progressed to eukaryotes such as yeast, and more recently (1998) progressed to a multi-cellular animal, the nematode Caenorhabditis elegans. Sequencers have now moved on to the fruit fly Drosophila melanogaster, whose sequence is slated for completion by the end of 1999. The human genome project is expected to determine the complete sequence of all 3 billion bases of human DNA within the next five years. In the wake of genome-scale sequencing, further instrumentation is being developed to assay gene expression and function on a comparably large scale. Much of the work in computational biology focuses on computational tools used in sequencing, finding genes that are related to a particular gene, finding which parts of the DNA code for proteins and which do not, understanding what proteins will be formed from a given length of DNA, predicting how the proteins will fold from a one-dimensional structure into a three dimensional structure, and so on. Much less computational work has been done regarding the function of proteins. One reason for this is that different proteins function very differently, and so work on protein function is very specific to certain classes of proteins. There are, for example, proteins such enzymes that catalyze various intracellular reactions, receptors that respond to extracellular signals and ion channels that regulate the flow of charged particles into and out of the cell. In this chapter, we will consider a particular class of proteins called transcription factors(TFs), which are responsible for regulating when a certain gene is expressed in a certain cell, which cells it is express in, and how much is expressed. Understanding these processes will involve developing a deeper understanding of transcription, translation, and the cellular processes that control those processes. All of these elements fall under the aegis of gene regulation or more narrowly transcriptional regulation. Some of the key questions in gene regulation are: What genes are expressed in a certain cell at a certain time? How does gene expression differ from cell to cell in a multicellular organism? Which proteins act as transcription factors, i.e., are important in regulating gene expression? From questions like these, we hope to understand which genes are important for various macroscopic processes. Nearly all of the cells of a multicellular organism contain the same DNA. Yet this same genetic information yields a large number of different cell types. The fundamental difference between a neuron and a liver cell, for example, is which genes are expressed. Thus understanding gene regulation is an important step in understanding development. Furthermore, understanding the usual genes that are expressed in cells may give important clues about various diseases. Some diseases, such as sickle cell anemia and cystic fibrosis, are caused by defects in single, non-regulatory genes; others, such as certain cancers, are caused when the cellular control circuitry malfunctions - an understanding of these diseases will involve pathways of multiple interacting gene products. There are numerous challenges in the area of understanding and modeling gene regulation. First and foremost, biologists would like to develop a deeper understanding of the processes involved, including which genes and families of genes are important, how they interact, etc. From a computation point of view, there has been embarrassingly little work done. In this chapter there are many areas in which we can phrase meaningful, non-trivial computational questions, but questions that have not been addressed. Some of these are purely computational (what is a good algorithm for dealing with a model of type X) and others are more mathematical (given a system with certain characteristics, what sort of model can one use? How does one find biochemical parameters from system-level behavior using as few experiments as possible?). In addition to biological and algorithmic problems, there is also the ever-present issue of theoretical biology - what general principles can be derived from these systems, what can one do with models other than just simulate time-courses, what can be deduced about a class of systems without knowing all the details? The fundamental challenge to computationalists and theorists is to add value to the biology - to use models, modeling techniques and algorithms to understand the biology in new ways.

Mjolsness, Eric↗

Effect of Annealing on the Impact Resistance and Fracture Mechanism of PNC-60 Sinters After Cold Plastic Deformation

Compaction of sintered metal powders by free upsetting at room temperature dangerously reduces their plastic properties, particularly the fracture toughness. The reason for the occurrence of two unfavorable phenomena accompanying this deformation route is sought. The first phenomenon depends on the initial porosity of the preform and the amount of cold work resulting in the destruction of bonds and violation of continuity between sintered powder particles. The second phenomenon is the deformation of the metal matrix, which reduces the plasticity of the sintered product. To correctly assess the effect of changes occurring in the matrix as a result of deformation, it is necessary to use the properly defined sintered matrix hardening parameter discussed in this study. The adverse effects of cold forming can be eliminated by annealing the deformed sinters at a temperature below the sintering point and above the recrystallization temperature. The annealing temperature causes favorable changes in the structure and increases the impact resistance of the deformed sinters depending on the degree of deformation of the sintered matrix and the initial porosity of the preform. Annealing at a properly selected temperature restores the ductility of the metal matrix and improves the integrity of the sintered material impaired by the effect of deformation. Annealing also causes favorable changes in the porosity morphology, removing defects in the form of gaps and resulting in the spheroidization of voids. With an appropriately selected initial porosity and degree of deformation, subsequent annealing of sinters compacted by free cold upsetting provides products with strength properties comparable to sinters with the same density and subjected to single compaction and sintering but with considerably higher fracture toughness.

36 MATERIALS SCIENCE↗

Mechanism of heat affected zone cracking in Ni-based superalloy DZ125L fabricated by laser 3D printing technique

Laser 3D printing is a promising technique to repair damaged Ni-based superalloy components. However, the occurrence of heat affected zone (HAZ) cracking severely limits its applicability. In this paper, we unravel the cracking mechanism by studying the element, phase, defect, and strain distribution around an intergranular crack that initiated from the primary HAZ. Using synchrotron X-ray Laue microdiffraction, we measured high tensile strain/stress transverse to the building direction in both the primary HAZ and the cladding layers, as well as high-density dislocations, which resulted from the thermal contraction and rapid precipitation of γ' phase. The crack initiated because the transverse tensile strain/stress tore up the liquid film formed by the low-melting point preexisting phases in the primary HAZ, such as γ/γ' eutectics and coarse γ' precipitates. The incoherent carbide particles were frequently observed near the crack root as local strain concentrators. In the cladding layers, micro-segregation could not be completely avoided, thus the hot crack continued to propagate over several layers with the assistance of the transverse tensile stress. Finally, our investigations provide a useful guideline for the optimization of the 3D printing process to repair Ni-based superalloys with high susceptibility to hot cracking.

36 MATERIALS SCIENCE↗

Fermi surface of the flat-band intermetallics A P d 3 ( A = Pb , Sn )

The intermetallic phases APd 3 (A = Pb, Sn) were recently predicted to host an unconventional combination of unique electronic structure features, namely, flat bands near the Fermi energy coexisting with topologically protected surface states at the Gamma point. These features each could independently produce alternative electronic states, including electronically or magnetically ordered states coexisting with unconventional edge dominated transport and a significantly large thermopower coexisting with topological characteristics. To explore these expectations, we report the synthesis, structural/chemical characterization, electrical and thermal transport properties, magnetic torque (up to 45 T), and Fermi surface mapping for single crystals produced using the Czochralski technique. X-ray diffraction and scanning transmission electron microscope measurements establish the absence of defects, while small measured values of the thermopower indicate that the Fermi level is located away from the flat-band region. The electronic properties are further clarified by the topography of the Fermi surfaces, measured through the de Haas–van Alphen effect. We find that the Fermi levels are placed at higher energy values than the original ones resulting from the density functional theory calculations, 54 meV higher for PbPd 3 and 68 meV higher for SnPd 3 . Furthermore, the molten flux method was used to synthesize PbPd 3 , yielding nearly identical Fermi surfaces between the specimens grown using different synthesis techniques, indicating the robustness of the Fermi level position. According to the density functional theory calculations, the flat band is mainly formed by the 4d bands of Pd. Thus, we propose monovalent doping on the Pb/Sn site as a viable approach to accessing the flat band while maintaining the unique band structure features of these compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

2014/2219 Tri-Point Crack Analysis

Friction stir welding (FSW) is a solid state welding process with potential advantages for aerospace and automotive industries dealing with light alloys. Self-reacting friction stir welding (SR-FSW) is one variation of the FSW process being developed at the National Aeronautics and Space Administration (NASA) for use in the fabrication of propellant tanks. Friction plug welding is used to seal the exit hole that remains in a circumferential SR-FSW. The objective of this study was to evaluate the deformation response at the tips of cracks located in the heat affected zone of friction plug welds and to study the fracture behavior of welds with defects in the form of fatigue cracks. The study used existing 2014-T6 to 2219-T87 self-reacting friction stir weld panels with 2219-T87 friction plug welds. Electro-discharge machined (EDM) notches were machined into the heat affected zone of the plug at the plug-to-base metal interface. Samples were then cycled to generate a fatigue crack emanating from the notch. After the fatigue crack reached a pre-defined length, a speckle pattern was applied and the ARAMIS system (a three dimensional imaging correlation system) was used to measure the deformations at the crack tip under a sequence of loads. Testing was conducted at ambient laboratory conditions. Fracture data from the testing was analyzed to evaluate residual strength capability of the panel as a function of flaw size. ARAMIS strain data was evaluated to examine strain and deformation patterns that develop around the crack tip and at the plug/weld interfaces. Four samples were used in this study, with three samples in a post-weld heat treated condition. Three samples contained large diameter plugs (M5) and one sample contained a small diameter plug (M3). Two samples were 4 inches in width and two samples were 8.5 inches in width. All samples failed through the precrack with residual strengths ranging from 37 ksi to 42 ksi.

Horton, Karla Renee↗

Contactless steam generation and superheating under one sun illumination

Steam generation using solar energy provides the basis for many sustainable desalination, sanitization, and process heating technologies. Recently, interest has arisen for low-cost floating structures that absorb solar radiation and transfer energy to water via thermal conduction, driving evaporation. However, contact between water and the structure leads to fouling and pins the vapour temperature near the boiling point. Here we demonstrate solar-driven evaporation using a structure not in contact with water. The structure absorbs solar radiation and re-radiates infrared photons, which are directly absorbed by the water within a sub-100 μm penetration depth. Due to the physical separation from the water, fouling is entirely avoided. Due to the thermal separation, the structure is no longer pinned at the boiling point, and is used to superheat the generated steam. We generate steam with temperatures up to 133 °C, demonstrating superheated steam in a non-pressurized system under one sun illumination.

14 SOLAR ENERGY↗

Arrays of Position-Sensitive Virtual Frisch-Grid CdZnTe Detectors: Results From a $4\times 4$ Array Prototype

Position-sensitive virtual Frisch-grid (VFG) CdZnTe (CZT) detectors offer a unique capability for correcting the response nonuniformities caused by crystal defects. This allowed us to achieve high energy resolution, while using typical-grade commercial CZT crystals with relaxed requirements to their quality, thus reducing the overall cost of detectors. Another advantage of the VFG detectors is that they can be integrated into arrays and used in small compact hand-held instruments or large-area gamma cameras that will enhance detection capability for many practical applications, including nonproliferation, medical imaging, and gamma-ray astronomy. Here in this paper, we present the results from testing small array prototypes coupled with front-end application-specified integrated circuit. Each detector in the array is furnished with 5-mm-wide charge-sensing pads placed near the anode. The pads signals are converted into XY coordinates, which combined with the cathode signals (for Z coordinates) provide 3-D position information of all interaction points. The basic array consists of a number of detectors grouped into 2×2 subarrays, each having a common cathode made by connecting together the cathodes of the individual detectors. Lastly, these features can significantly improve the performance of detectors while using typical-grade low-cost CZT crystals to reduce the overall cost of the proposed instrument.

3-D position-sensitive virtual Frisch-grid (VFG) d↗

Etched-And-Regrown GaN P–N Diodes with Low-Defect Interfaces Prepared by In Situ TBCl Etching

The ability to form pristine interfaces after etching and regrowth of GaN is a prerequisite for epitaxial selective area doping, which in turn is needed for the formation of lateral PN junctions and advanced device architectures. In this work, we report the electrical properties of etched-and-regrown GaN PN diodes using an in situ Cl-based precursor, tertiary butylchloride (TBCl). We demonstrated a regrowth diode with I–V characteristics approaching that from a continuously grown reference diode. The sources of unintentional contamination from the silicon (Si) impurity and the mediating effect of Si during the TBCl etching are also investigated in this study. Furthermore, this work points to the potential of in situ TBCl etching toward the realization of GaN lateral PN junctions.

36 MATERIALS SCIENCE↗

Optoelectronic property comparison for isostructural Cu 2 BaGeSe 4 and Cu 2 BaSnS 4 solar absorbers

To target mitigation of anti-site defect formation in Cu 2 ZnSnS 4–x Se x , a new class of chalcogenides, for which Ba or Sr (group 2) replace Zn (group 12), has recently been introduced for prospective solar absorber application. Cu 2 BaGeSe 4 (CBGSe) and Cu 2 BaSnS 4 (CBTS) are two such compounds, which share a common trigonal crystal structure (P3 1 space group) and similar quasi-direct band gap (~2 eV). While CBTS-based films have already been studied, there are no reports yet on films and solar cells based on related CBGSe. To identify key differences and similarities in the electronic properties between these two materials, electronic characteristics (e.g., carrier concentration, mobility, electron affinity, defect levels, recombination, and charge carrier kinetics) of vacuum-deposited CBGSe and CBTS films are compared using a variety of characterization methods. Hall effect measurements reveal that CBGSe films have relatively higher hole carrier concentration and lower mobility (3 × 10 15 cm –3 , 0.6 cm 2 V –1 s –1 ) compared to CBTS (5 × 10 12 cm –3 , 3.5 cm 2 V –1 s –1 ). Photoelectron spectroscopy yields low electron affinity values for both CBGSe (3.7 eV) and CBTS (3.3 eV), pointing to the necessity of pursuing low electron affinity buffer materials for both types of absorbers. At low temperatures, CBGSe films show free-exciton photoluminescence, as well as pronounced deep-level emission at ~1.4 eV, while CBTS films exhibit a strong bound-exciton signal with noticeably less intense deep-level emission than for CBGSe. Charge carrier kinetics, transport, and recombination properties of both types of films are also analyzed using optical-pump terahertz-probe spectroscopy and time-resolved microwave conductivity. The first CBGSe prototype solar cells (using chemical bath deposited CdS as a buffer layer) show a maximum of 1.5% efficiency with ~0.62 V open-circuit voltage. Furthermore, the measured properties point to possible limiting factors for CBGSe and related films for PV and optoelectronics and provide insights on possible approaches for improvement within this multinary chalcogenide family.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The HIGH CHLOROPHYLL FLUORESCENCE 244 homolog CrHCF244 is required for psbA (D1) translation in Chlamydomonas reinhardtii

Translation of psbA, the chloroplast gene that encodes the D1 subunit of PSII, is important for both PSII biogenesis and repair. The translation of psbA transcripts in the chloroplast is under the control of nuclear gene products. Using a forward genetic screen and whole-genome sequencing of the alga Chlamydomonas reinhardtii , we found a mutant defective in PSII activity and mapped the causative gene to be the homolog of Arabidopsis HIGH CHLOROPHYLL FLUORESCENCE 244 (HCF244) , namely CrHCF244 . We then demonstrated that CrHCF244 is required for psbA translation in the alga, consistent with the function of HCF244 in Arabidopsis, and found that AtHCF244 also partially complemented the algal mutant. These results experimentally support the functional conservation of the homologs in green algae and land plants. Intriguingly, the CrHCF244 mutant also exhibited a relatively high rate of suppressor mutants, pointing to the presence of alternative factor(s)/pathway(s) for D1 translational control. The establishment of CrHCF244 as a psbA translation factor in C. reinhardti i shows the similarities in psbA translation regulation in algae and plants. The future identification of the alternative factor(s) in this alga will provide insights on psbA translation in plants.

Arabidopsis↗

Charge Generation and Propagation in Igneous Rocks

Resistivity changes, ground potentials, electromagnetic (EM) and luminous signals prior to or during earthquakes have been reported, in addition to ground uplift and tilt, and to changes in the seismic wave propagation parameters. However, no physical model exists that ties these diverse phenomena together. Through time-resolved impacts experiments it has been observed that, when igneous rocks (gabbro, diorite, granite) are impacted at low velocities (approx. 100 m/sec), highly mobile electronic charge carriers are generated, spreading from a small volume near the impact point, causing electric potentials, EM and light emission. The rock becomes momentarily conductive. When impacted at higher velocities (approx. 1.5 km/sec), the propagation of the P and S waves is registered through the transient piezoelectric response of quartz. At the same time, the rock volume is filled with mobile charge carriers, and a positive surface potential is registered. During the next 1-2 msec the surface potential oscillates, due to electron injection from ground. These observations are consistent with positive holes, e.g. defect electrons in the O(2-) sublattice, that can travel via the O 2p-dominated valence band of the silicate minerals at the speed of a phonon-mediated charge transfer. Before activation, the positive hole charge carriers lay dormant in form of positive hole pairs, PHP, electrically inactive, chemically equivalent to peroxy links in the structures of constituent minerals. PHPs are introduced by way of hydroxyl (O3Si-OH) incorporated into nominally anhydrous minerals when they crystallize in water-laden environments. Given that sound waves of even relatively low intensity appear to cause PHPs dissociation, thus generating mobile positive holes, it is proposed that microfracturing during rock deformation cause PHP dissociation. Depending on where and how much the rock volume is stressed, the positive holes are expected to form fluctuating charge clouds in the earthquake source region that may account for earthquake-related electrical phenomena and the reported low frequency EM signals.

Freund, Friedemann↗