Synthesis and field emission behaviour of well faceted In{sub 2}Se{sub 3} micro-crystals
Here in, we report synthesis of crystalline Indium Selenide (In{sub 2}Se{sub 3}) elegant microcrystals on Au coated Si substrates using one-step facile thermal evaporation route and their field emission investigations. The as-synthesized In{sub 2}Se{sub 3} micro-crystals were subjected to structural and morphological analysis prior to the field emission studies. The XRD spectrum of the as-synthesized product reveals formation of crystalline hexagonal phase of In{sub 2}Se{sub 3} under the prevailing experimental conditions. Under optimized process variables, the morphology of the as-synthesized product is characterized by presence of well facetted micron size particles of In2Se3. Furthermore, the EDAX analysis confirms the presence of In and Se in the as-synthesized sample. The field emission characteristic of the In{sub 2}Se{sub 3} micro-crystal emitter is found to be superior to the other metal chalcogenides micro-crystal based emitters. The synthesized In{sub 2}Se{sub 3} micro-crystals emitter delivers current density of ∼ 225 µA/cm{sup 2} at an applied electric field of ∼ 7.44 V/µm. The emission current stability investigated at pre-set value of ∼ 3 µA is observed to be fairly good. These observed results demonstrate potential of the In{sub 2}Se{sub 3} cathode as an electron source for practical applications in vacuum microelectronic devices.