Search NASA⌕ Search

SEARCH · Search NASA

Results for “Substrates”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,297 records · Page 72
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Growth of nano hexagon-like flake arrays cerium carbonate created with PAH as the substrate

Petals-like Ce{sub 2}(CO{sub 3}){sub 3} on Ce{sub 2}(CO{sub 3}){sub 3} nano hexagon-like flake arrays have been precipitatingly fabricated using PAH substrates. By changing the way of feeding, PAH concentration and aging time, petals-like Ce{sub 2}(CO{sub 3}){sub 3} was created best when adding PAH into the Ce(NO{sub 3}){sub 3} solution, joined (NH{sub 4}){sub 2}CO{sub 3} solution along with mixing, PAH concentration is 0.9 g/L, aging time is 4 h. A growth mechanism was proposed to account for the growth of the petals-like Ce{sub 2}(CO{sub 3}){sub 3} with PAH as the substrate. Poly allylamine hydrochloride (PAH) is as template agent which forms π-allyl complex with Ce{sup 3+} and controls the morphology of Ce{sub 2}(CO{sub 3}){sub 3} particle. PAH and Ce{sup 3+} form π-allyl complex, and then induce the formation of Ce{sub 2}(CO{sub 3}){sub 3} crystal nucleus. And infrared spectrum analysis verified. XRD show that after adding PAH which is adsorbed on the crystal plane, the growth of Ce{sub 2}(CO{sub 3}){sub 3} crystal is inhibited on (2 4 2), the growth is promoted on (2 0 2) which is differentiated into the new (1 5 1), (2 2 2) is unchanged, Ce{sub 2}(CO{sub 3}){sub 3} crystal is accumulated petals shape by hexagon-like flake. UV absorption spectra show that CeO{sub 2} as prepared precursor Ce{sub 2}(CO{sub 3}){sub 3} after calcinations in air at high temperatures, the petal-like CeO{sub 2} has strong UV absorption and reflection effects, and absorption interval changed significantly by the move to UVA from UVB. - Graphical abstract: Each Ce-atom connects three Cl-atoms and three allyls in three dimensional spaces. To take the plane as a reference plane which is arrayed with three Ce-atom as equilateral triangle. The triangular each vertex is Ce-atom, the triangular center place is Cl-atom, the equilateral triangle which is mutually perpendicular with Ce-triangle surface and the inclined angle is 60° is made up with three Cl-atoms. - Highlights: • Petals-like Ce{sub 2}(CO{sub 3}){sub 3} were synthesized with PAH. • PAH and Ce{sup 3+} form π-allyl complex. • The growth crystal is inhibited on (2 4 2) and promoted on (2 0 2). • CeO{sub 2} absorption interval changed by the move to UVA from UVB.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Effects of metallic nanoparticle doped flux on the interfacial intermetallic compounds between lead-free solder ball and copper substrate

Lead free solders currently in use are prone to develop thick interfacial intermetallic compound layers with rough morphology which are detrimental to the long term solder joint reliability. A novel method has been developed to control the morphology and growth of intermetallic compound layers between lead-free Sn–3.0Ag–0.5Cu solder ball and copper substrate by doping a water soluble flux with metallic nanoparticles. Four types of metallic nanoparticles (nickel, cobalt, molybdenum and titanium) were used to investigate their effects on the wetting behavior and interfacial microstructural evaluations after reflow. Nanoparticles were dispersed manually with a water soluble flux and the resulting nanoparticle doped flux was placed on copper substrate. Lead-free Sn–3.0Ag–0.5Cu solder balls of diameter 0.45 mm were placed on top of the flux and were reflowed at a peak temperature of 240 °C for 45 s. Angle of contact, wetting area and interfacial microstructure were studied by optical microscopy, field emission scanning electron microscopy and energy-dispersive X-ray spectroscopy. It was observed that the angle of contact increased and wetting area decreased with the addition of cobalt, molybdenum and titanium nanoparticles to flux. On the other hand, wettability improved with the addition of nickel nanoparticles. Cross-sectional micrographs revealed that both nickel and cobalt nanoparticle doping transformed the morphology of Cu{sub 6}Sn{sub 5} from a typical scallop type to a planer one and reduced the intermetallic compound thickness under optimum condition. These effects were suggested to be related to in-situ interfacial alloying at the interface during reflow. The minimum amount of nanoparticles required to produce the planer morphology was found to be 0.1 wt.% for both nickel and cobalt. Molybdenum and titanium nanoparticles neither appear to undergo alloying during reflow nor have any influence at the solder/substrate interfacial reaction. Thus, doping of flux with appropriate metallic nanoparticles can be successfully used to control the morphology and growth of intermetallic compound layers at the solder/substrate interface which is expected to lead to better reliability of electronic devices. - Highlights: • A novel nanodoped flux method has been developed to control the growth of IMCs. • Ni doped flux improves the wettability, but Co, Mo and Ti deteriorate it. • Ni and Co doped flux gives planer IMC morphology through in-situ alloying effect. • 0.1 wt.% Ni and Co addition into flux gives the lowest interfacial IMC thickness. • Mo and Ti doped flux does not have any influence at the interfacial reaction.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices

Highlights: {yields} GaN films are deposited on diamond substrates by ECR-PEMOCVD. {yields} Influence of deposition temperature on the properties of samples is investigated. {yields} Properties of GaN films are dependent on the deposition temperature. -- Abstract: GaN films with highly c-axis preferred orientation are deposited on free-standing thick diamond films by low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N{sub 2} are applied as precursors of Ga and N, respectively. The quality of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction (XRD) analysis, Hall Effect measurement (HL), room temperature photoluminescence (PL) and atomic force microscopy (AFM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 {sup o}C, and the room temperature PL spectra of the optimized GaN film show a intense ultraviolet near band edge emission and a weak yellow luminescence. The obtained GaN/diamond structure has great potential for the development of high-power semiconductor devices due to its excellent heat dissipation nature.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Recombination luminescence and trap levels in undoped and Al-doped ZnO thin films on quartz and GaSe (0 0 0 1) substrates

Highlights: Black-Right-Pointing-Pointer ZnO films on GaSe create electron trapping states and PL recombination levels. Black-Right-Pointing-Pointer Zn and Al diffusion in GaSe produces low-energy widening of its PL emission. Black-Right-Pointing-Pointer ZnO:Al films on GaSe lamellas are suitable for gas-discharge lamp applications. -- Abstract: Photoluminescence spectra of ZnO and ZnO:Al (1.00, 2.00 and 5.00 at.%) films on GaSe (0 0 0 1) lamellas and amorphous quartz substrates, obtained by annealing, at 700 K, of undoped and Al-doped metal films, are investigated. For all samples, the nonequilibrium charge carriers recombine by radiative band-to-band transitions with energy of 3.27 eV, via recombination levels created by the monoionized oxygen atoms, forming the impurity band laying in the region 2.00 - 2.70 eV. Al doping induces an additional recombination level at 1.13 eV above the top of the valence band of ZnO films on GaSe substrates. As a result of thermal diffusion of Zn and Al into the GaSe interface layer from ZnO:Al/GaSe heterojunction, electron trap levels located at 0.22 eV and 0.26 eV below the conduction band edge of GaSe, as well as a deep recombination level, responsible for the luminescent emission in the region 1.10 - 1.40 eV, are created.

36 MATERIALS SCIENCE↗
DOE OSTI2012

One-step catalytic growth of carbon nanofiber arrays vertically aligned on carbon substrate

Highlights: ► Acetylene as carbon resource and copper foil as catalyst. ► Three carbon nanostructures are synthesized by modulating feeding gas compositions. ► NH{sub 3} is a key factor in the growth of VA-CNF arrays. -- Abstract: Vertically aligned carbon nanofiber (VA-CNF) arrays on carbon substrate have been synthesized via one-step chemical vapor deposition process on copper foil, by using acetylene as carbon resource. Three types of carbon nanostructures, viz. bare carbon films, CNFs and VA-CNFs grown on carbon substrate, could be selectively synthesized by only modulating the concentration of C{sub 2}H{sub 2} and NH{sub 3} in the feeding gases. It was found that NH{sub 3} was a key factor in the growth of VA-CNF arrays, which could increase the diffusion capability of copper atoms in carbon materials, therefore promote forming larger spherical Cu NPs catalysts for the growth of VA-CNFs. Furthermore, a growth mechanism in different feeding gas compositions was proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with In{sub x}Al{sub 1−x}Sb continuously graded buffer

High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm{sup 2}/Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Synthesis and electrochemical capacitance of long tungsten oxide nanorod arrays grown vertically on substrate

Highlights: ► Growth of long amorphous tungsten oxide nanorods on a substrate. ► Formation of single-crystalline tungsten oxide nanorods by a heat-treatment. ► High electrochemical pseudocapacitance of 2.8 mF cm{sup −2}. ► Excellent cyclability of psuedocapacitance up to 1000 cycles. -- Abstract: Long tungsten oxide nanorods are vertically grown on Al/W/Ti coated silicon substrates using a two-step anodization process. The first anodization of the Al film forms a mesh-like mask of anodic aluminum oxide, and the second anodization of the W film results in the formation of a buffer layer, a bottom nanorod, and a top nanorod of amorphous tungsten oxide. A pore-widening process prior to the second anodization leads to the enhancement of nanorod length above approximately 500 nm. After a heat-treatment, the tungsten oxide nanorods are crystallized to form a single crystalline structure while the buffer layer forms a polycrystalline structure. The crystalline tungsten oxide nanorods show a cyclic voltammogram retaining the quasi-rectangular shape of an electrochemically reversible faradaic redox reaction, i.e., a typical pseudocapacitive behavior. The maximum electrochemical capacitance per apparent surface area reaches approximately 2.8 mF cm{sup −2} at the voltage scan rate of 20 mV s{sup −1}, and the excellent cyclability of charge–discharge process is maintained up to 1000 cycles.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Preparation of α-MnMoO{sub 4} at ultra-low temperature on an organic substrate

Highlights: ► A film of α-MnMoO{sub 4} nanorods was prepared on paper. ► The film was prepared by a solution reaction and subsequent dehydration at 220 °C. ► The average film thickness was approximately 60 μm. ► The relative permittivity of the prepared α-MnMoO{sub 4} film was 12 at 1 GHz. - Abstract: A crystalline film of α-MnMoO{sub 4} has been prepared at an ultra-low temperature of 220 °C on paper by a direct solution reaction and subsequent dehydration. First, MnMoO{sub 4}·0.9H{sub 2}O was prepared by immersing the substrate in an aqueous solution of MnCl{sub 2}, followed by spraying a determined area of the substrate with an aqueous solution of Na{sub 2}MoO{sub 4}. The ceramic film of MnMoO{sub 4}·0.9H{sub 2}O was then dehydrated at 220 °C to form a crystalline film of α-MnMoO{sub 4}. The crystal structure of the material was confirmed by X-ray powder diffraction and an average film thickness of 60 μm was measured using a profilometer. The permittivity of the film was also studied and showed a value of 12 at 1 GHz. Additionally, the low loss performance of a capacitance structure was obtained.

36 MATERIALS SCIENCE↗
DOE OSTI2014

3D TiO{sub 2} submicrostructures decorated by silver nanoparticles as SERS substrate for organic pollutants detection and degradation

Graphical abstract: - Highlights: • Contrive a multifunctional SERS substrate with 3D sub-micrometer structure and multicomponent. • The blue wing of butterfly (Euploea mulciber) is used as template for Ag/TiO{sub 2} nanocomposites. • The 3D submicrostructures Ag/TiO{sub 2} presents superior SERS effect and photocatalytic activity. • Pave a facile route to prepare multifunctional material by utilizing smart structural designs in nature. - Abstract: The blue wing of butterfly Euploea mulciber is used as a template to generate Ag/TiO{sub 2} nanocomposites. Thereinto, Ag nanoparticles are deposited uniformly onto TiO{sub 2} substrate with three dimensional (3D) submicrometer structures. This unique 3D sub-micrometer structures featured with ridges, ribs and struts can provide a large number of active “hot spots” for enhanced Raman signal. Meanwhile, depositing Ag onto the TiO{sub 2} surface can greatly boost its SERS effect and photocatalytic activity by bringing additional electrons into the molecules and inhibiting electrons–holes recombination. Thus, the as-prepared 3D Ag/TiO{sub 2} submicrostructures can not only offer sensitive and reproducible SERS signals, but also present superior photocatalytic activity, which can be utilized to detect and eliminate organic pollutants.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering

Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical properties of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Influence of Al content on the properties of ternary Al{sub 2x}In{sub 2−2x}O{sub 3} alloy films prepared on YSZ (1 1 1) substrates by MOCVD

Highlights: • Al{sub 2x}In{sub 2−2x}O{sub 3} films were prepared on the Y-stabilized ZrO{sub 2} (1 1 1) substrates by MOCVD at 700 °C. • A phase transition from the bixbyite In{sub 2}O{sub 3} structure to the amorphous structure was observed. • The lowest resistivity of 4.7 × 10{sup −3} Ω cm was obtained for the Al{sub 0.4}In{sub 1.6}O{sub 3} film. • Tunable optical band gap from 3.7 to 4.8 eV was obtained. - Abstract: The ternary Al{sub 2x}In{sub 2−2x}O{sub 3} films with different Al contents of x [Al/(Al + In) atomic ratio] have been fabricated on the Y-stabilized ZrO{sub 2} (1 1 1) substrates by metal organic chemical vapor deposition at 700 °C. The structural, electrical and optical properties of the films as a result of different Al contents (x = 0.1–0.9) were investigated in detail. With the increase of Al content from 10% to 90%, a phase transition from the bixbyite In{sub 2}O{sub 3} structure with a single orientation along (1 1 1) to the amorphous structure was observed. The minimum resistivity of 4.7 × 10{sup −3} Ω cm, a carrier concentration of 1.4 × 10{sup 20} cm{sup −3} and a Hall mobility of 9.8 cm{sup 2} v{sup −1} s{sup −1} were obtained for the sample with x = 0.2. The average transmittances for the Al{sub 2x}In{sub 2−2x}O{sub 3} films in the visible range were all over 78% and the optical band gap of the films could be tuned from 3.7 to 4.8 eV.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Thin films sputtered from Ba{sub 2}NdFeNb{sub 4}O{sub 15} multiferroic targets on BaFe{sub 12}O{sub 19} coated substrates

Highlights: • Synthesis of Ba{sub 2}NdFeNb{sub 4}O{sub 15}/BaFe{sub 12}O{sub 19} (BaM) heterostructures by RF magnetron sputtering. • Growth of TTB layer were retained regardless of the underlayer (Pt bottom electrode or BaM). • Dielectric and magnetic properties were obtained from the Pt/TTB/BaM/Pt stacks. - Abstract: Ba{sub 2}NdFeNb{sub 4}O{sub 15} tetragonal tungsten bronze (TTB)/BaFe{sub 12}O{sub 19} (BaM) hexaferrite bilayers have been grown by RF magnetron sputtering on Pt/TiO{sub 2}/SiO{sub 2}/Si (PtS) substrates. The BaM layer is textured along (0 0 1) while the TTB layer is multioriented regardless of the PtS or BaM/PtS substrate. Dielectric properties of TTB films are similar to those of bulk, i.e., ε ∼ 150 and a magnetic hysteresis loop is obtained from TTB/BaM bilayers, thanks to the BaM component. This demonstrates the possibility of transferring to 2 dimensional structures the composite multiferroic system TTB/BaM previously identified in 3 dimensional bulk ceramics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Ink-substrate interactions during 3D printing revealed by time-resolved coherent X-ray scattering

Additive printing techniques are regarded as revolutionary and versatile methods of advanced device manufacturing, stemming from the possibility to pattern materials on a custom-based approach and the potential to create novel microstructures and achieve new functionalities. Despite these advantages, the inherent anisotropy of the printing process is a source of property gradients within the printed materials, often associated with variable and/or poor performance. Up to date, the evolutionary pathways associated with printing have largely remained unaddressed, mainly owing to the difficulty to study the transformations induced in the material during processing. Time-resolved coherent X-ray scattering techniques, such as X-ray photon correlation spectroscopy, enable the in situ study of transient nanoscale and mesoscale states in a large variety of materials, including amorphous ones, by directly accessing the most relevant timescales and length scales of their nanoscale and mesoscale dynamics, self-assembly, and mesostructure evolution. In this work, we conduct in operando studies of continuous-flow direct writing with colloidal inks, focusing on how the ink formulation and ink-substrate interactions affect the processes that determine the macroscopic properties of the printed materials. We find fundamental differences in the ink structural relaxations emerging from the primary colloid properties (monodisperse versus aggregated colloids) and the substrates surface energy and mechanical properties. Our work helps to reveal and quantify the basic science governing the evolution of 3D-printed materials during processing, ultimately improving engineering criteria for the design of printable materials.

36 MATERIALS SCIENCE↗
DOE OSTI2011

A colorimetric sensor based on anodized aluminum oxide (AAO) substrate for the detection of nitroaromatics.

Simple and low cost colorimetric sensors for explosives detection were explored and developed. Anodized aluminum oxide (AAO) with large surface area through its porous structure and light background color was utilized as the substrate for colorimetric sensors. Fabricated thin AAO films with thickness less than {approx} 500 nm allowed us to observe interference colors which were used as the background color for colorimetric detection. AAO thin films with various thickness and pore-to-pore distance were prepared through anodizing aluminum foils at different voltages and times in dilute sulfuric acid. Various interference colors were observed on these samples due to their difference in structures. Accordingly, suitable anodization conditions that produce AAO samples with desired light background colors for optical applications were obtained. Thin film interference model was applied to analyze the UV-vis reflectance spectra and to estimate the thickness of the AAO membranes. We found that the thickness of produced AAO films increased linearly with anodization time in sulfuric acid. In addition, the growth rate was higher for AAO anodized using higher voltages. The thin film interference formulism was further validated with a well established layer by layer deposition technique. Coating poly(styrene sulfonate) sodium salt (PSS) and poly(allylamine hydrochloride) (PAH) layer by layer on AAO thin film consistently shifted its surface color toward red due to the increase in thickness. The red shift of UV-vis reflectance was correlated quantitatively to the number of layers been assembled. This sensitive red shift due to molecular attachment (increase in thickness) on AAO substrate was applied toward nitroaromatics detection. Aminopropyltrimethoxysilane (APTS) which can be attached onto AAO nanowells covalently through silanization and attract TNT molecules was coated and applied for TNT detection. UV-vis spectra of AAO with APTS shifted to the longer wavelength side due to TNT attachment. This red shift implied AAO thickness increased and positive detection of TNT molecules. It was also observed that both APTS and polyethyleneimine (PEI) were electron rich polymers which formed Meisenheimer complexes with TNT in solution and changed its color abruptly. This strong color change due to chemical reaction was applied as another approach for direct TNT detection. Commercial AAO films with long pores (60 {mu}m) and white background color were coated with APTS or PEI and then exposed to TNT in solution. These membranes turned to pink rapidly and eventually became visibly orange after a few hours with a strong absorption around 500 nm that was consistent with the formation of Meisenheimer complexes. The visible color change can be observed by unaided eyes and is suitable for nitroaromatics detection at higher concentration while interference color red shift in AAO thin film is designed for nitroaromatics detection at monolayer (nm) level.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Crystal Structure of 12-Lipoxygenase Catalytic-Domain-Inhibitor Complex Identifies a Substrate-Binding Channel for Catalysis

Lipoxygenases are critical enzymes in the biosynthesis of families of bioactive lipids including compounds with important roles in the initiation and resolution of inflammation and in associated diseases such as diabetes, cardiovascular disease, and cancer. Crystals diffracting to high resolution (1.9 {angstrom}) were obtained for a complex between the catalytic domain of leukocyte 12-lipoxygenase and the isoform-specific inhibitor, 4-(2-oxapentadeca-4-yne)phenylpropanoic acid (OPP). In the three-dimensional structure of the complex, the inhibitor occupied a new U-shaped channel open at one end to the surface of the protein and extending past the redox-active iron site that is essential for catalysis. In models, the channel accommodated arachidonic acid, defining the binding site for the substrate of the catalyzed reaction. There was a void adjacent to the OPP binding site connecting to the surface of the enzyme and providing a plausible access channel for the other substrate, oxygen.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2012

Alternative nucleophilic substrates for the endonuclease activities of human immunodeficiency virus type 1 integrase

Retroviral integrase can use water or some small alcohols as the attacking nucleophile to nick DNA. To characterize the range of compounds that human immunodeficiency virus type 1 integrase can accommodate for its endonuclease activities, we tested 45 potential electron donors (having varied size and number or spacing of nucleophilic groups) as substrates during site-specific nicking at viral DNA ends and during nonspecific nicking reactions. We found that integrase used 22 of the 45 compounds to nick DNA, but not all active compounds were used for both activities. In particular, 13 compounds were used for site-specific and nonspecific nicking, 5 only for site-specific nicking, and 4 only for nonspecific nicking; 23 other compounds were not used for either activity. Thus, integrase can accommodate a large number of nucleophilic substrates but has selective requirements for its different activities, underscoring its dynamic properties and providing new information for modeling and understanding integrase.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2018

Nanoimprinted Chiral Plasmonic Substrates with Three-Dimensional Nanostructures

Here, we report a large-area fabrication method to prepare chiral substrates patterned with arrays of multilayer, three-dimensional nanostructures using a combination of nanoimprint lithography and glancing angle deposition. Several structures are successfully fabricated using this method, including L-shaped, twisted arc and trilayer twisted Au nanorod structures, demonstrating its generality. As one typical example, arrays of L-shaped nanostructures, consisting of two layers of orthogonally oriented Au nanorods separated by a Ge dielectric layer in the thickness direction, exhibit giant optical chirality in the infrared region with an experimentally achieved g-factor as high as 0.38. Electromagnetic simulations show that the optical chirality results from plasmon hybridization between the two orthogonal Au segments. To demonstrate scalability, a 1 cm 2 chiral substrate is fabricated with uniform chiral optical property. This method combines both high throughput and precise geometrical control and is therefore promising for applications of chiral metamaterials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗