DOE OSTI2017
GaAs-based photocathodes have been widely used in the photogun to produce spin polarized electron beams. These photocathodes in the photogun are required to provide high quantum efficiency (QE), high degree of electron-spin polarization (ESP) and long lifetime to satisfy demanding requirements of today's electron accelerators. Photocathodes that demonstrate improved performance will enable the successful construction of proposed new accelerators that will enable new physics research. This thesis presents several studies of polarization photocathodes aimed to quantifying and further understanding the limitation of today's GaAs-based photocathodes, and then successfully identifies effective methods to improve their performance to meet the requirements of the state-of-the-art and future advanced electron accelerators. Up to now, the strained superlattice GaAs-based photocathodes is the only material that provide electron beam with high ESP (~90%) for electron accelerators, but its primary drawback is that the QE is low (~1%). These photocathodes have already been successfully used in electron accelerators (such as CEBAF at JLab), but the low QE is very hard to satisfy the urgent demands of some new proposed electron accelerators (such as eRHIC requires the beam current up to 50 mA). Thus, it is extremely urgent to improve greatly the QE of these polarization photocathodes. This thesis reports a high?polarization strained GaAs/GaAsP superlattice photocathode fabricated with Distributed Bragg Reflector (DBR) structure, which successful achieved a breakthrough in the QE (~6%) that is improved several times over the existing QE (~1.2%), while still maintaining high ESP, through stringent parameter design and repeated experimental optimization. This provides important benchmark parameter for several proposed electron accelerators and will significantly shorten the development process for producing mA order of magnitude of electron beam with high polarization. The photocathode lifetime is one of the main factors of modern DC high voltage photogun, and long lifetime provides a necessary condition for photogun to provide a sustained and stable electron beam. Although it has been realized that the lifetime of photocathodes is primarily limited by ion back?bombardment, until now, no systematic studies of the effects of ion back-bombardment on photocathodes have been performed, of which many physical mechanisms are unclear. In this thesis, the sensitivity of QE decay (or lifetime) to ion back-bombardment is studied and evaluated in detail for the first time, giving the important conclusion that the best choice for a photogun using GaAs-based photocathodes would be surface cleave plane (110). This study provides an important theory for II photogun researchers to understand the ion back-bombardment and helps to prolong the operating lifetime of photogun in future. The ESP obtained from typical bulk unstrained GaAs photocathodes is usually considerably less than the theoretical maximum value of 50% because of depolarization (or spin relaxation) mechanisms that originate within the photocathode material and at the vacuum surface interface (i.e. activation layer). This thesis provides a comprehensive review of depolarization mechanisms and presents a systematic experimental evaluation of polarization sensitivities to temperature, dopant density, activation layer and crystal orientation. One of the key findings is that the bulk unstrained GaAs photocathode can provide the highest polarization ~50%, consistent with the maximum theoretical value, when the photocathode sample had relatively low dopant concentration and was cooled to 77 K. This study helps to better understand the mechanisms of polarization loss of electrons in the GaAs photocathode, and benefits to produce electron beam with higher ESP from GaAs photocathode. A novelstrained superlattice structure, GaAsSb/AlGaAs photocathode, is also proposed and studied in this thesis, and some experiments for it have been performed. Although the experimental results are not as good as our expectation, it provides a strong research foundation for future development of high polarization photocathodes. Finally, a brief summary of the work under preparation for generation of mA record-level high-current polarized electron beam from the Upgraded Injector Test Facility (UITF) at JLab is presented.