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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,315 records · Page 73
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Boron–oxygen complex yields n-type surface layer in semiconducting diamond

Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (~0.778 × 10 21 cm -3 ) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ~1–1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B–O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B 3 O and B 4 O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High-energy ballistic electrons in low-pressure radio-frequency plasmas

This study demonstrates the presence of a small number of high-energy ballistic electrons (HEBEs) that originate from secondary electrons in low-pressure radio-frequency (rf) plasmas. The kinetic behaviors of the HEBEs are illustrated through electron energy probability functions from the fully kinetic particle-in-cell simulations, showing two wavy high-energy tails and two bifurcations during one rf cycle. Test-particle simulations and a semi-analytical method associated with nonlocal electron kinetics are performed to characterize the HEBE trajectories, which reveal the ballistic nature of the HEBEs and their typical bouncing features between the rf sheaths. Parameter dependence of the HEBEs on the discharge conditions (e.g., gas pressure, gap distance, and rf frequency) are identified, which is relevant to the plasma collisionality. With a pronounced presence of HEBEs, the overall impacts of the secondary electron emission on discharge parameters, such as electron power absorption and ionization rate, are also illustrated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

First demonstration of a cryocooler conduction cooled superconducting radiofrequency cavity operating at practical cw accelerating gradients

Abstract We demonstrate practical accelerating gradients on a superconducting radiofrequency (SRF) accelerator cavity with cryocooler conduction cooling, a cooling technique that does not involve the complexities of the conventional liquid helium bath. A design is first presented that enables conduction cooling an elliptical-cell SRF cavity. Implementing this design, a single cell 650 MHz Nb 3 Sn cavity coupled using high purity aluminum thermal links to a 4 K pulse tube cryocooler generated accelerating gradients up to 6.6 MV m −1 at 100% duty cycle. The experiments were carried out with the cavity-cryocooler assembly in a simple vacuum vessel, completely free of circulating liquid cryogens. We anticipate that this cryocooling technique will make the SRF technology accessible to interested accelerator researchers who lack access to full-stack helium cryogenic systems. Furthermore, the technique can lead to SRF based compact sources of high average power electron beams for environmental protection and industrial applications. A concept of such an SRF compact accelerator is presented.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

The high-power helicon program at DIII-D: gearing up for first experiments

Helicon current drive, also called fast wave current drive in the lower hybrid range of frequencies, has long been regarded as a promising current drive tool for reactor grade plasmas. A newly installed MW-level system at DIII-D will be the first test of this technology in reactor-relevant plasmas, in the sense that full single-pass absorption is expected. A 30-module traveling wave antenna has been installed and optimized in-vessel in early 2020. The linear electromagnetic characteristics of the unloaded module array have been extensively tested both on the bench and in the vessel at instrumentation power levels. Excellent performance has been achieved, ~2% reflected power and ~1.5% dissipated power per module in air, in a 10 MHz band around 476 MHz. Stripline feeds on both ends of the antenna allow either co or counter current drive. The installation of a 1.2 MW klystron and associated high-power electronics was completed in Fall 2020. Commissioning of the antenna is ongoing. An important goal of this experiment is to validate the helicon current drive physics basis using an extensive set of new and upgraded diagnostics.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Studies in pulse shape discrimination for an optimized ASIC design

The continued advancements of Silicon Photomultipliers (SiPMs) have made them viable photosensors for low recoil energy Pulse Shape Discrimination (PSD) between fast neutron and gamma interactions when coupled to an appropriate scintillator. At the same time, the large number of channels in a typical array calls for the development of low-cost and low-power electronics. A custom integrated circuit (ASIC) is an ideal solution for this purpose. To assess the requirements for such an ASIC, studies were performed using two scintillators, Stilbene and EJ-276, coupled to a 6 x 6 mm SiPM from Onsemi. We demonstrate that both scintillators are viable for performing PSD for interaction energies from 100 keV to several MeV while optimizing the integration periods used in the PSD metric. These measurements inform the design parameters of the ASIC under development.

Si-PMTs↗
DOE OSTI2022

Thickness-dependent phase transition kinetics in lithium-intercalated MoS 2

The phase transitions of two-dimensional (2D) materials are key to the operation of many devices with applications including energy storage and low power electronics. Nanoscale confinement in the form of reduced thickness can modulate the phase transitions of 2D materials both in their thermodynamics and kinetics. Here, using in situ Raman spectroscopy we demonstrate that reducing the thickness of MoS 2 below five layers slows the kinetics of the phase transition from 2H- to 1T'-MoS 2 induced by the electrochemical intercalation of lithium. In this study, we observe that the growth rate of 1T' domains is suppressed in thin MoS 2 supported by SiO 2 , and attribute this growth suppression to increased interfacial effects as the thickness is reduced below 5 nm. In this study, the suppressed kinetics can be reversed by placing MoS 2 on a 2D hexagonal boron nitride ( h BN) support, which readily facilitates the release of strain induced by the phase transition. Additionally, we show that the irreversible conversion of intercalated 1T'-MoS 2 into Li2S and Mo is also thickness-dependent and the stability of 1T'-MoS 2 is significantly increased below five layers, requiring a much higher applied electrochemical potential to break down 1T'-MoS 2 into Li 2 S and Mo nanoclusters.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Diffusion of acceptor dopants in monoclinic 𝛽−Ga 2⁢ O 3

𝛽−Ga 2 ⁢O 3 is a promising material for next-generation power electronics because of its ultrawide band gap and high critical breakdown voltage. However, realizing its full potential requires precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the diffusion behavior of eight potential deep-level substitutional acceptors (Au, Ca, Co, Cu, Fe, Mg, Mn, and Ni) in 𝛽−Ga 2 ⁢O 3 . We consider two key diffusion mechanisms: (i) interstitial diffusion under nonequilibrium conditions relevant to ion implantation, and (ii) trap-limited diffusion (TLD) under near-equilibrium thermal annealing conditions. Our results reveal a strong diffusion anisotropy along the 𝑏 and 𝑐 axes, with dopant behavior governed by competition between diffusion and incorporation (or dissociation) activation energies. Under interstitial diffusion, Ca$^{2+}_{i}$ and Mg$^{2+}_{i}$ show the most favorable combination of low migration and incorporation barriers, making them promising candidates for efficient doping along the 𝑏 and 𝑐 axes, respectively. In contrast, Au$^{+}_{i}$ diffuses readily, but exhibits an incorporation barrier that exceeds 5 eV, rendering it ineffective as a dopant. From a thermal stability perspective, Co$^{2+}_{i}$ shows poor activation but high diffusion barriers, which may suppress undesirable migration at elevated temperatures. Under trap-limited diffusion, the dissociation of dopant-host complexes controls mobility. Mg$^{2+}_{i}$ again emerges as a leading candidate, exhibiting the lowest dissociation barriers along both axes, whereas Co$^{2+}_{i}$ and Fe$^{2+}_{i}$ display the highest barriers, suggesting improved dopant retention under thermal stress. In conclusion, our findings guide dopant selection by balancing activation and thermal stability, essential for robust semi-insulating substrates.

Defects↗
DOE OSTI2024

Heterostructural interface engineering for ultrawide-gap nitrides from first principles: Ta C / Al N and Ta C / Ga N rocksalt-wurtzite interfaces

Epitaxial lattice matching is an important condition for the formation of coherent interfaces with low defect densities. However, lattice-matched substrates with the same crystal structure as the active layer are often not available, suggesting opportunities for utilizing heterostructural interfaces. For example, at high Al contents that are interesting for ultrawide-gap applications in power electronics, Al x ⁢Ga 1-x ⁢N semiconductor alloys in the (0001) orientation of the wurtzite (wz) structure become lattice-matched to (111)-oriented rocksalt (rs) Ta⁢C substrates. To predict the expected interface atomic structures under different synthesis conditions, we perform high-throughput density-functional-theory calculations, using an algorithm for systematic sampling of the possible stacking sequences of the atomic layers on the in-plane hexagonal lattice. The approach considers octahedral, tetrahedral, and prismatic coordination motifs, and is generally applicable for the modeling of commensurate rs/wz heterostructural interfaces. Our results provide guidance for synthesis control of substrate-film bonding and the polarity of ultrawide-gap Al x⁢ Ga 1-x⁢ N alloys on Ta⁢C substrates.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Optimizing n -type doping of ZnGeN 2 and ZnSiN 2

In order for the wide-band-gap Zn-IV-nitrides to find applications in power electronics or optoelectronics, controlled n-type doping is required. In this work, we systematically explore group-V and group-VI dopants that can act as donors in ZnGeN 2 and ZnSiN 2 . We address compensation by native acceptors as well as self-compensation by formation of DX centers. For ZnGeN 2 , we find that S N , Se N , P Ge , and As Ge act as shallow donors. P Ge has the lowest formation energy and can be used to reach carrier concentrations up to n = 1.3 × 1019 cm –3 . PSi acts as a shallow donor in ZnSiN 2 ; however, because of strong compensation from native acceptors, we find that ZnSiN 2 cannot be doped n type.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Suppression of Alfven Modes on the National Spherical Torus Experiment Upgrade with Outboard Beam Injection [Suppression of Alfven Modes on the NSTX-U with Outboard Beam Injection]

In this paper we present data from experiments on the National Spherical Torus Experiment Upgrade, where it is shown for the first time that small amounts of high pitch-angle beam ions can strongly suppress the counterpropagating global Alfven eigenmodes (GAE). GAE have been implicated in the redistribution of fast ions and modification of the electron power balance in previous experiments on NSTX. The ability to predict the stability of Alfven modes, and developing methods to control them, is important for fusion reactors like the International Tokamak Experimental Reactor, which are heated by a large population of nonthermal, super-Alfvenic ions consisting of fusion generated alpha's and beam ions injected for current profile control. We present a qualitative interpretation of these observations using an analytic model of the Doppler-shifted ion-cyclotron resonance drive responsible for GAE instability which has an important dependence on k(perpendicular to rho L). A quantitative analysis of this data with the HYM stability code predicts both the frequencies and instability of the GAE prior to, and suppression of the GAE after the injection of high pitch-angle beam ions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Persistent Room-Temperature Photodarkening in Cu-Doped β - Ga 2 O 3

β–Ga 2 O 3 is an ultrawide band gap semiconductor with emerging applications in power electronics. Here, the introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped β–Ga 2 O 3 to UV light > 4 eV is shown to cause large, persistent photo-induced darkening at room temperature. Electron paramagnetic resonance spectroscopy indicates that light exposure converts Cu 2+ to Cu 3+ , a rare oxidation state that is responsible for the optical absorption. The photodarkening is accompanied by the appearance of O–H vibrational modes in the infrared spectrum. Hybrid function calculations show that Cu acceptors can favorably complex with hydrogen donors incorporated as interstitial (Hi) or substitutional (HO) defects. When Cu Ga –HO complexes absorb light, hydrogen is released, contributing to the observed Cu 3+ species and O–H modes.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Thermal conductivity of GaN, 71 GaN, and SiC from 150 K to 850 K

The thermal conductivity (Λ) of wide-band-gap semiconductors GaN and SiC is critical for their application in power devices and optoelectronics. Here, we report time-domain thermoreflectance measurements of Λ in GaN, 71 GaN, and SiC between 150 and 850 K. The samples include bulk c- and m-plane wurtzite GaN grown by hydride vapor phase epitaxy (HVPE) and ammonothermal methods; homoepitaxial natural isotope abundant GaN and isotopically enriched 71 GaN layers with thickness of 6–12 μm grown on c-, m-, and a-plane GaN substrates grown by HVPE; and bulk crystals of 4H and 6H SiC. In low dislocation density (<10 7 cm –2 ) bulk and homoepitaxial GaN, Λ is insensitive to crystal orientation and doping concentration (for doping <10 19 cm –3 ); Λ ≈ 200 W m –1 K –1 at 300 K and ≈ 50 W m –1 K –1 at 850 K. In 71 GaN epilayers at 300 K, Λ is ≈15% higher than in GaN with natural isotope abundance. The measured temperature dependence of Λ in GaN is stronger than predicted by first-principles based solutions of the Boltzmann transport equation that include anharmonicity up to third order. This discrepancy between theory and experiment suggests possible significant contributions to the thermal resistivity from higher-order phonon scattering that involve interactions between more than three phonons. The measured Λ of 4H and 6H SiC is anisotropic, in good agreement with first-principles calculations, and larger than GaN by a factor of ≈1.5 in the temperature range 300 < T < 850K. Furthermore, this paper provides benchmark knowledge about the thermal conductivity in wide-band-gap semiconductors of GaN, 71 GaN, and SiC over a wide temperature range for their applications in power electronics and optoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structural, optical, and thermal properties of BN thin films grown on diamond via pulsed laser deposition

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap > 4.0 eV), such as BN and diamond, hold significant importance for the development of high-power electronics in the next generation. However, achieving in situ heteroepitaxy of BN/diamond or vice versa remains exceptionally challenging due to the complex growth kinetics involved. In this work, we grew BN thin film on (100) single-crystal diamonds using pulsed laser deposition and investigated its structural, magnetic, optical, and thermal properties. Throughout this study, the structural analyses confirmed the growth of BN films, which exhibited diamagnetic behavior at room temperature. Notably, the film demonstrated anisotropic refractive index characteristics within the visible-to-near-infrared wavelength range. The room-temperature cross-plane thermal conductivity of BN is 1.53 ± 0.77 W/mK, while the thermal conductance of the BN/diamond interface is 20 ± 2 MW/m 2 ⁢K. These findings have significant implications for a range of device applications based on UWBG BN/diamond heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Valley-Coherent Quantum Anomalous Hall State in AB-Stacked MoTe 2 / W S e 2 Bilayers

Moiré materials provide fertile ground for the correlated and topological quantum phenomena. Among them, the quantum anomalous Hall (QAH) effect, in which the Hall resistance is quantized even under zero magnetic field, is a direct manifestation of the intrinsic topological properties of a material and an appealing attribute for low-power electronics applications. The QAH effect has been observed in both graphene and transition metal dichalcogenide (TMD) moiré materials. It is thought to arise from the interaction-driven valley polarization of the narrow moiré bands. Here, we show that the newly discovered QAH state in AB-stacked MoTe 2 / W S e 2 moiré bilayers is not valley polarized but valley coherent. The layer- and helicity-resolved optical spectroscopy measurement reveals that the QAH ground state possesses spontaneous spin (valley) polarization aligned (antialigned) in two TMD layers. In addition, saturation of the out-of-plane spin polarization in both layers occurs only under high magnetic fields, supporting a canted spin texture. Our results call for a new mechanism for the QAH effect and highlight the potential of TMD moiré materials with strong electronic correlations and spin-orbit interactions for exotic topological states. Published by the American Physical Society 2024

2-dimensional systems↗
DOE OSTI2020

Dynamic Phasor Modeling of Various Multipulse Rectifiers and a VSI Fed by 18-Pulse Asymmetrical Autotransformer Rectifier Unit for Fast Transient Analysis

To study the fast modelling of dynamic characteristics caused by power electronic switching, the dynamic phasor (DP) theory based on the time-varying Fourier decomposition and frequency shifting is firstly applied to the modelling of various multipulse rectifiers. The DP model for symmetrical 12-pulse phase-shifting reactor rectifier unit (PSR-RU) is derived with model order reduction, relations between ac and dc terminals, and Taylor series expansion. The DP model of asymmetrical 18-pulse autotransformer rectifier unit (AT-RU) is proposed based on the switching functions expressed in the DP domain. Meanwhile, the DP model of voltage source inverter (VSI) fed by asymmetrical 18-pulse AT-RU is built with the harmonic state-space (HSS) equations. Under both balanced and unbalanced conditions, the good calculation accuracy and rapid simulation speed of the developed DP models are validated by the detailed time-domain (TD) simulation.

42 ENGINEERING↗
DOE OSTI2016

Genetic Algorithm Design of a 3D Printed Heat Sink

In this paper, a genetic algorithm- (GA-) based approach is discussed for designing heat sinks based on total heat generation and dissipation for a pre-specified size andshape. This approach combines random iteration processesand genetic algorithms with finite element analysis (FEA) to design the optimized heat sink. With an approach that prefers survival of the fittest , a more powerful heat sink can bedesigned which can cool power electronics more efficiently. Some of the resulting designs can only be 3D printed due totheir complexity. In addition to describing the methodology, this paper also includes comparisons of different cases to evaluate the performance of the newly designed heat sinkcompared to commercially available heat sinks.

3D Printing↗
DOE OSTI2021

Standard Modular Architecture for Consumer End Plug and Play Interfaces

The growth in load and generation sources at the edge of the grid is driving the innovation in power electronic (PE) grid interfaces at the consumer end to improve the grid resiliency, reliability, security, and cost of the future infrastructure. Novel PE technologies are key enablers for the future grid infrastructure to handle the issues that arise because of the projected growth. This paper introduces a novel fundamental building block (FBB) architecture with plug-and play features. An example framework that enables co-ordination of multiple FBBs hierarchically to provide various grid functions is also presented. The FBBs are designed to be equipped with advanced features like online health monitoring, embedded intelligence, and decision-making capability for enhancing the metrics of consumer end plug and play interfaces. The paper elaborates on the proposed architecture and the developed framework i.e., the controls, communication, protection, and the corresponding timing requirements for the building blocks. The architecture and the framework have been validated through simulations and the communication framework has been validated with a control hardware in the loop platform.

Chinthavali, Madhu Sudhan↗