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A method of synthesizing a doped carbon composite includes preparing a solution having a carbon source material and a heteroatom containing additive, evaporating the solution to yield a plurality of powders, and subjecting the plurality of powders to a heat treatment for a duration of time effective to produce the doped carbon composite.
Quantum anomalous Hall effect has been observed in magnetically doped topological insulators. However, full quantization, up until now, is limited within the sub–1 K temperature regime, although the material’s magnetic ordering temperature can go beyond 100 K. Here, we study the temperature limiting factors of the effect in Cr-doped (BiSb)2Te3 systems using both transport and magneto-optical methods. By deliberate control of the thin-film thickness and doping profile, we revealed that the low occurring temperature of quantum anomalous Hall effect in current material system is a combined result of weak ferromagnetism and trivial band involvement. Our findings may provide important insights into the search for high-temperature quantum anomalous Hall insulator and other topologically related phenomena.
Highlights: • Alkali metal doped boron and aluminum phosphide nano-cages are evaluated for NLO properties. • The NLO response of phosphide nano-cages is compared with nitride nano-cages. • Phosphide nano-cages show better NLO properties than the corresponding nitride nano-cages. • Conductivity of doped nano-cages is much higher than pristine nano-cages. • MAl{sub 11}P{sub 12} and MB{sub 11}P{sub 12} show monotonic increase in hyperpolarizability with size of alkali metal. - Abstract: Phosphide nano-cages of MX{sub 12}P{sub 11} and MX{sub 11}P{sub 12} (where X = B or Al, M = Li, Na, K) are investigated theoretically for geometric, electronic and nonlinear optical (NLO) properties. Alkali metal is doped by replacing (a) aluminum or boron atom and (b) phosphorus atom. Alkali metal doping can remarkably alter the electronic and NLO properties of the nano-cages, regardless of doping site. HOMO-LUMO gap is decreased whereas first hyperpolarizability is enhanced significantly in doped AlP and BP nano-cages. PDOS (partial density of states) analysis suggests that diffuse excess electrons from alkali metal play important role in boosting NLO properties of phosphide nano-cages. TD-DFT calculations are performed to study the effect of alkali metal doping on absorption spectra. Red shift is observed in the UV–vis spectra of all considered nano-cages. Comparison of phosphide nano-cages with nitride nano-cages indicated that doping nitride nano-cages with alkali metal leads to greater hyperpolarizability and NLO response than doping phosphide nano-cages.
Highlights: • Effect of Mn-site doping by Ru has been studied in La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7}. • Electrical resistance, magnetoresistance and magnetic properties were measured. • Ru substitution enhances the ferromagnetism and metallicity. • Results were interpreted by the ferromagnetically coupled Ru with Mn ions in Mn–O–Ru network. - Abstract: The effect of Mn-site doping on magnetic and transport properties in the bilayer manganites La{sub 1.24}Sr{sub 1.76}Mn{sub 2-y}Ru{sub y}O{sub 7} (y = 0.0, 0.04, 0.08 and 0.15) has been studied. The undoped compound La{sub 1.24}Sr{sub 1.76}Mn{sub 2}O{sub 7} exhibits a ferromagnetic metal to paramagnetic insulator transition at T{sub C} = 130 K and the substitution of Ru shifts the transition temperatures to higher temperature values. The increased metal–insulator transition by Ru substitution, obtained from temperature dependence of resistivity measurements, indicates that the Ru substitution enhances the metallic state at low temperature regime and favours the Mn–Ru pairs in the Ru doped samples. Moreover, the activation energy values calculated from the temperature dependence of resistivity curves suggest that the Ru substitution weakens the formation of polarons. The increased magnetoresistance ratio from 108% to 136% by Ru substitution, measured at 5 K, points out that the Ru substitution also enhances the inter-grain tunneling magnetoresistance. Thus, the ferromagnetic order and metallic state in La{sub 1.24}Sr{sub 1.76}Mn{sub 2}O{sub 7} system have been enhanced by the presence of Ru in the Mn-site. These reinforcements of ferromagnetic metallic state and magnetoresistance have been interpreted by the ferromagnetically coupled high spin states of Ru with Mn ions in the Mn–O–Ru network.
Graphical abstract: - Highlights: • Samples synthesized by solid state reaction route successfully. • La and Pb substitutions significantly change the BiFeO{sub 3} crystal symmetry. • The presence of E(TO9) and E(LO9) modes indicates ferroelectric domain of BiFeO{sub 3}. • Doped ions and crystal structure affect the dielectric properties of the samples. • The observed value of conductivity for BPFO sample is 3.1 × 10{sup −9} σ{sup −1} cm{sup −1}. - Abstract: Single-phase BiFeO{sub 3}, Bi{sub 0.825}Pb{sub 0.175}FeO{sub 3} and Bi{sub 0.725}La{sub 0.1}Pb{sub 0.175}FeO{sub 3} ceramic samples were prepared via solid state reaction route to study the effects of co-doping (La/Pb) on their crystal structure and ferroelectromagnetic behaviour. X-ray diffraction data accompanied by Rietveld refinement showed that BiFeO{sub 3} crystallize in rhombohedral distorted perovskite structure (space group-R3c) while to that BPFO and BLPFO crystallize in tetragonal (P4/mmm) symmetry. Presence of E(TO9) and E(LO9) modes in Raman scattering spectra for BiFeO{sub 3} and Bi{sub 0.725}La{sub 0.1}Pb{sub 0.175}FeO{sub 3} infers ferroelectric nature. However, absence of both modes in Bi{sub 0.875}Pb{sub 0.175}FeO{sub 3} indicates the paraelectric nature. The room temperature dielectric constant (10 Hz–1 MHz) of BiFeO{sub 3}, Bi{sub 0.825}Pb{sub 0.175}FeO{sub 3} and Bi{sub 0.725}La{sub 0.1}Pb{sub 0.175}FeO{sub 3} is about 100, 60, and 200. Ferroelectromagnetic measurements revealed the existence of ferroelectricity with remnant polarization of 0.24 μC/cm{sup 2} in Bi{sub 0.725}La{sub 0.1}Pb{sub 0.175}FeO{sub 3}, paraelectricity in Bi{sub 0.875}Pb{sub 0.175}FeO{sub 3}, and weak (strong) ferromagnetism with remnant magnetizations of 0.25 (1.57) emu/g in Bi{sub 0.725}La{sub 0.1}Pb{sub 0.175}FeO{sub 3} (Bi{sub 0.825}Pb{sub 0.175}FeO{sub 3})
Dirac semimetals exhibiting nontrivial topological characteristics stand as exemplary parent compounds, offering great promise for the realization of novel electronic states. These materials also serve as a versatile platform for systematically investigating topological quantum phase transitions. In this study, we present compelling evidence of profound structural and transport phase shifts in a recently uncovered oxide Dirac semimetal, SrNbO3, achieved through effective in situ anion doping. Notably, a remarkable increase in resistivity of more than three orders of magnitude at room temperature is observed upon nitrogen-doping. The extent of electronic modulation in SrNbO3 is strongly correlated with the misfit strain, underscoring its phase instability to both chemical doping and crystallographic symmetry variations. Using first-principles calculations, we discern that elevating the level of nitrogen doping induces an upward shift in the conductive bands of SrNbO3-?N?. Consequently, a transition from a metallic state to an insulating state becomes apparent as the nitrogen concentration reaches a threshold of 1/3. This investigation sheds light on the potential of anion engineering in oxide Dirac semimetals, offering pathways for manipulating their physical properties. These insights hold promise for future applications that harness these materials for tailored functionalities.
We have studied spin dependent electron momentum density in CoGa{sub 0.3}Fe{sub 1.7}O{sub 4} at 300 K using magnetic Compton spectroscopy. It is observed that major contribution to total spin moment mainly arises from Co ions while itinerant electrons show negative polarization. Orbital contribution has been deduced by comparing the magnetic Compton spectroscopy with the magnetization data. It is revealed that the anisotropy in magnetization in the system increases with the Ga doping.
Highlights: • Upconversion mechanisms of transparent Er{sup 3+} doped tellurite glasses are discussed. • Sensitivity of the thermometer based on the FIR technique increases monotonously with the decreasing doping concentration. • Highly sensitive and accurate optical thermometer is achieved using low doping sample as the probe and high power laser as the pumping source. - Abstract: We investigate the thermal effects of Er{sup 3+} doped tellurite glasses on the upconversion properties. It is found that the sensitivity of the thermometer based on the FIR technique increases monotonously with the decreasing doping concentration. However, low doping leads to weak upconversion intensity and further decrease the sensing accuracy, which makes it difficult to achieve the high sensitivity and accuracy simultaneously. Influences of the irradiating laser power on the sensing behaviors were studied in the purpose of enhancing the signal intensity. It is found that the heating effect of incident laser (up to hundreds of mW) can be neglected, indicating the feasibility of using high laser power and low doping sample to produce both high sensitivity and high accuracy. In addition, this paper respectively discusses the mechanisms of the upconversion processes and the concentration dependent sensitivity.
Abstract TiO 2 material has gained significant attention for large‐scale energy storage due to its abundant, low‐cost, and environmentally friendly properties, as well as the availability of various nanostructures. Phosphorus doping has been established as an effective technique for improving electronic conductivity and managing the slow ionic diffusion kinetics of TiO 2 . In this study, non‐doped and phosphorus doped TiO 2 materials were synthesized using sodium alginate biopolymer as chelating agent. The prepared materials were evaluated as anode materials for lithium‐ion batteries (LIBs). The electrodes exhibit remarkable electrochemical performance, including a high reversible capacity of 235 mAh g −1 at 0.1 C and excellent first coulombic efficiency of 99 %. An integrated approach, combining operando XRD and ex‐situ XAS, comprehensively investigates the relationship between phosphorus doping, material structure, and electrochemical performance, reinforced by analytical tools and first principles calculations. Furthermore, a full cell was designed using 2 %P‐doped TiO 2 anode and LiFePO 4 cathode. The output voltage was about 1.6 V with high initial specific capacity of 148 mAh g −1 , high rate‐capability of 120 mAh g −1 at 1 C, and high‐capacity retention of 96 % after 1000 cycles at 1 C.
Grain boundaries are effective sinks for radiation-induced defects, ultimately impacting the radiation tolerance of nanocrystalline materials (dense materials with nanosized grains) against net defect accumulation. However, irradiation-induced grain growth leads to grain boundary area decrease, shortening potential benefits of nanostructures. A possible approach to mitigate this is the introduction of dopants to target a decrease in grain boundary mobility or a reduction in grain boundary energy to eliminate driving forces for grain growth (using similar strategies as to control thermal growth). Here, in this study, we tested this concept in nanocrystalline zirconia doped with lanthanum. Although the dopant is observed to segregate to the grain boundaries, causing grain boundary energy decrease and promoting dragging forces for thermally activated boundary movement, irradiation induced grain growth could not be avoided under heavy ion irradiation, suggesting a different growth mechanism as compared to thermal growth. Furthermore, it is apparent that reducing the grain boundary energy reduced the effectiveness of the grain boundary as sinks, and the number of defects in the doped material is higher than in undoped (La-free) YSZ.
SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interest due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the multivalley valence bands with a large effective mass on semiconducting SnSe crystals and reveal single-valley conduction bands through electron doping to provide a complete picture of the thermoelectric physics. Moreover, by electron doping through potassium deposition, the band gap of SnSe can be widely tuned from 1.2 eV to 0.4 eV, providing new opportunities for tunable electronic and optoelectronic devices.
Polycrystalline Bi{sub 1−x}Y{sub x}FeO{sub 3} films with varying x from 0 to 0.30 were prepared by pulsed laser deposition on surface oxidized Si (100) substrates with LaNiO{sub 3} as buffer layer. The influence of Y doping on the structure, ferroelectric properties, and exchange bias have been systematically investigated. X-ray diffraction and Raman spectroscopy studies revealed the structural transition from rhombohedral R3c to orthorhombic Pn2{sub 1}a with increasing x above 0.10. The leakage current density of BiFeO{sub 3} has been effectively suppressed by Y doping, and well saturated P–E loops have been observed in Bi{sub 1−x}Y{sub x}FeO{sub 3} (0.01 ≤ x ≤ 0.07). Exchange bias field with a 3.6 nm thick NiFe layer increases with increasing x to 0.01, then decreases with further increasing x.
The electronic coupling and photocatalytic activity of Ag{sub 2}CO{sub 3}–TiO{sub 2} nanocomposite can be optimized by the fine-tuning of the band position of titanium oxide with nitrogen doping. The increase of the valence band energy of TiO{sub 2} by N-doping leads not only to the enhanced absorption of visible light but also to the promoted hole transfer from Ag{sub 2}CO{sub 3} to TiO{sub 2}, resulting in the efficient spatial separation of photogenerated electrons and holes. While the undoped Ag{sub 2}CO{sub 3}–TiO{sub 2} nanocomposite shows an inferior photocatalytic activity to the pure Ag{sub 2}CO{sub 3}, the photocatalyst performance of N-doped nanocomposite is better than those of Ag{sub 2}CO{sub 3} and undoped Ag{sub 2}CO{sub 3}–TiO{sub 2} nanocomposite. This observation underscores a significant enhancement of the photocatalytic activity of nanocomposite upon N-doping, a result of enhanced electronic coupling between the hybridized species. The present results clearly demonstrate the importance of the fine-tuning of band position in optimizing the photocatalytic activity of hybrid-type photocatalysts. - Highlights: • The band position of Ag{sub 2}CO{sub 3}–TiO{sub 2} can be effectively tailored by nitrogen doping. • The N-doping leads to the improvement of charge separation. • The N-doped Ag{sub 2}CO{sub 3}–TiO{sub 2} shows high photocatalytic activity.
We present the spin momentum density of Ga doped CoFe{sub 2}O{sub 4} at 100 K using magnetic Compton scattering. The measurement has been performed using circularly polarized synchrotron radiations of 182.65 keV at SPring8, Japan. The experimental profile is decomposed into its constituent profile to determine the spin moment at individual sites. Co atom has the maximum contribution (about 58%) in the total spin moment of the doped CoFe{sub 2}O{sub 4}.
Here, we report the effect of multivalent Cr-ion doping on the structural, optical, magnetic, and resistive switching properties of BiFe 1-x Cr x O 3 (BFCO) thin films (where, 0 ≤ x ≤ 0.15). BFCO thin films were deposited on Pt/TiO 2 /SiO 2 /Si (100) substrate using pulsed laser deposition technique. X-ray diffraction and micro-Raman analysis revealed the presence of a secondary phase in BFCO thin films, above 5% Cr doping concentrations. Enhanced magnetization was observed in BFCO films owing to ferromagnetic superexchange interaction between Fe and Cr-ions. X-ray photoelectron spectroscopy measurements revealed the multivalent states of Cr and Fe-ions, where suppression of oxygen vacancies due to Cr-ion doping in BFCO films was discussed based on the defect chemistry viewpoint. Moreover, current conduction and resistive switching properties were studied and the dominant switching mechanism was explained in the light of oxygen vacancies assisted filamentary conduction model.
The authors investigated the characteristics of Nb-doped In{sub 2}O{sub 3} (INbO) films prepared by co-sputtering of Nb{sub 2}O{sub 5} and In{sub 2}O{sub 3} for use in transparent anodes for organic solar cells (OSCs). To optimize the Nb dopant composition in the In{sub 2}O{sub 3} matrix, the effect of the Nb doping power on the resistivity and transparency of the INbO films were examined. The electronic structure and microstructure of the INbO films were also investigated using synchrotron x-ray absorption spectroscopy and x-ray diffraction examinations in detail. At the optimized Nb co-sputtering power of 30 W, the INbO film exhibited a sheet resistance of 15 Ω/sq, and an optical transmittance of 86.04% at 550 nm, which are highly acceptable for the use as transparent electrodes in the fabrication of OSCs. More importantly, the comparable power conversion efficiency (3.34%) of the OSC with an INbO anode with that (3.31%) of an OSC with a commercial ITO anode indicates that INbO films are promising as a transparent electrode for high performance OSCs.
Here, laser pyrolyzed SnO 2 nanoparticles with an option of nitrogen (N) doping are prepared using a cost-effective method. The electrochemical performance of N-doped samples is tested for the first time in Li-ion batteries where the sample with 3% of N-dopant exhibits optimum performance with a capacity of 522 mAh g active material –1 that can be obtained at 10 A g –1 (6.7C).
We report thermoelectric measurements over a temperature range of 80 K to 300 K of heavily boron-doped nanocrystalline silicon films prepared by hot-wire and plasma-enhanced chemical-vapor depositions. The nanocrystalline silicon films were doped by either gaseous deposition precursors or post-deposition ion implantation, resulting in boron concentrations ranging from 1 -2 x 10 20 cm -3 to 3 x 10 21 cm -3 . Reasonable values of the Seebeck coefficient and electrical conductivity were obtained at 300 K, comparable to many other research work. We also report thermal conductivity measurements on these films before doping, which we use to estimate their prospective thermoelectric efficiency. These measurements show values as low as 0.76 W/mK at 300 K which depend highly upon the grain sizes of the nc-Si films. We find that post-deposition doping by ion-implantation is more effective at enhancing the power factor than gaseous doping, and the power factor is only weakly dependent upon doping concentration for the films doped by ion implantation. We conclude that improvements of the thermoelectric efficiency of nc -Si films may depend more on a reduction of their thermal conductivity than doping optimization. The small grain sizes and the low thermal conductivity of the undoped nc -Si films accomplished in this work are therefore encouraging developments.