Anomalous Hall Effect in Epitaxial Ni–Mn–Ga Thin Films Grown on MgO(001) Substrate during the Martensitic Transformation
Epitaxial Ni–Mn–Ga thin films had been grown on MgO (001) by DC magnetron sputtering. And the anomalous Hall effect (AHE), microstructures, magnetism, and magnetoresistance (MR) were investigated. The AHE was measured in the film of Ni{sub 47.8}Mn{sub 30.8}Ga{sub 21.4} during the martensitic transformation. Meanwhile, the mechanism of the AHE was explained which indicates that the hall resistivity measured in our sample is primarily determined by AHE. The microstructures of the austenite phase and 7M martensite plates at room temperature had been observed on the film of Ni{sub 46.7}Mn{sub 31.7}Ga{sub 21.6} and Ni{sub 47.8}Mn{sub 30.8}Ga{sub 21.4}, respectively. Magnetic measurements reveal that all films possessed the martensitic transformation during the heating and cooling processes. In addition, the MR showed a negative value during the martensitic transformation which is mainly due to the reduction of spin-dependent scattering.