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At least 1,351 records · Page 75

The effect of alkali metal on the surface properties of potassium doped Au-Beta zeolites

Graphical abstract: Display Omitted Highlights: ► Interaction of gold with K leads to the change of electronic state and redox properties of gold. ► The amount of potassium incorporated into Au-zeolites determines the size of gold particles. ► K(0.2 wt.%)/Au-Beta exhibits the best performance in decomposition of N{sub 2}O and removal of Bu{sub 2}S. -- Abstract: Beta zeolite was applied as support for gold introduced by gold-precipitation method and potassium added by impregnation or adsorption. The effect of zeolite composition and the amount of potassium introduced on the surface properties of the final materials was considered. Moreover, the interaction of gold and potassium species was found to be related to the adsorptive and catalytic behaviour of zeolites in NO reduction with propene and deodorization. K/Au-Beta(Impregnated) exhibits the best performance in the above mentioned processes because of the small gold particles (between 2 and 5 nm) and interaction of gold with potassium species leading to the change of electronic properties of the surface (the appearance of cationic gold species). Potassium added as a promoter improves the catalytic properties of Au-zeolite in N{sub 2}O decomposition and also in deodorization (increase of the ability to dibutyl sulphide oxidation). The catalysts prepared were characterized by XRD, XPS, UV–vis, TEM, pyridine adsorption combined with FTIR and test reaction (2-propanol transformation).

36 MATERIALS SCIENCE↗

Final Technical Report for DE-FG02-86ER45268

This work addresses several key issues for understanding the unusual superconductivity in IBS, already shown to be technologically useful materials. 1a). Are reactive gasses like fluorine, chlorine, or water vapor behaving simply as electron donors to cause the superconductivity (at T conset =21 K) in undoped IBS like BaFe 2 As 2 ? 1b). Does exposure to fluorine increase T c in electron-doped IBS materials that are underdoped, e. g. Ba(Fe 0.96 Co 0.04 ) 2 As 2 ? 1c). Can fluorine as a reactive electron-donor, with its relatively greater ease of introduction into the lattice, be used as a rapid tool to search for superconductivity in new materials under investigation? Method of investigation: Using electron probe microanalysis, x-ray photoemission spectroscopy, and dynamical mean field theory calculations, we found that fluorine substitutes for As in the BaFe 2 As 2 lattice, and should therefore behave as an electron donor. We will F-dope Ba(Fe 0.96 Co 0.04 ) 2 As 2 and several new compounds under investigation for superconductivity upon doping to determine fluorine’s effect. Potential impact: If – like for fluorine - a brief exposure to hydrogen indeed causes superconductivity to a depth of 10 microns, this technique could be useful in creating long lengths of superconducting tape without the chemical aggressiveness of fluorine. Using the F ion, which substitutes for As - away from the Fe planes, in underdoped IBS like Ba(Fe 0.96 Co 0.04 ) 2 As 2 may form optimally doped IBS with less impurity scattering of the superconducting Fe 3d electrons resulting in improved superconducting properties. Another potential impact is the speed of checking for superconductivity in new materials under investigation for superconductivity upon doping. 2. What are the effects of Be substitution into IBS, beginning with FeSe and its derivatives (FeSe 1-x S x and FeSe 1-x Te x ) and BaFe 2-x Co x As 2 ? Method of investigation: We recently succeeded in adding Be to the FeSe lattice and found, surprisingly, a factor of four improvement of the low temperature residual resistivity ratio, consistent with improved electronic ordering. Using single crystal x-ray diffraction and x-ray dispersive spectroscopy, determine the concentration and location of the Be dopant. Using resistivity, determine if there is improvement in the residual resistivity achieved by Be doping in the FeSe derivatives (using AlCl 3 :KCl flux growth) and Co-doped BaFe 2 As 2 (using self-flux single crystal growth). Measuring resistivity under strain, determine the changes of the nematic susceptibility at the structural ordering transition causes by the increase in electronic order caused by Be doping in FeSe. Potential impact: Further understanding of IBS, including FeSe which - under physical pressure - has a T c increase to 40 K and -prepared as a monolayer - has a T c reported to be over 100 K. 3. In collaboration, prepare light atom compounds involving Be and look for high pressure-induced superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evolution of Dissipative Regimes in Atomically Thin Bi 2 Sr 2 CaCu 2 O 8 + x Superconductor

Thermoelectric transport is widely used to study Abrikosov vortex dynamics in unconventional superconductors. However, only a few thermoelectric studies have been conducted near the dimensional crossover that occurs when the vortex-vortex interaction length scale becomes comparable to the sample size. Here, the effects of finite size on the dissipation mechanisms of the Nernst effect in the optimally doped Bi 2 Sr 2 CaCu 2 O 8 + x high-temperature superconductor are reported, down to the atomic length limit. To access this regime, a new generation of thermoelectric chips based on silicon nitride microprinted circuit boards is developed. These chips ensure optimized signals while preventing sample deterioration. The results demonstrate that lateral confinement at the nanoscale can effectively reduce vortex dissipation. Investigating vortex dissipation at the micro- and nano-scale is essential for creating stable, miniaturized superconducting circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Kinetic Simulations of Cu Doping in Chlorinated CdSeTe PV Absorbers

This paper reports on 1D kinetic modeling of p-type doping formation in Cu-doped chlorinated CdSeTe photovoltaic (PV) absorbers with graded Se profiles. Following the recent progress in kinetic simulations of the defect chemistry in stoichiometric CdTe films, this work extends simulation capabilities to a domain of semiconductor alloy films with graded stoichiometries. The defect formation energies and ionization levels, as well as the diffusion and reaction barriers used in the reaction-diffusion equations are calculated from the first principles. A new formalism is employed to account for the uncertainty of the defect formation energies in semiconductor alloys caused by unknown local surrounding. Finally, the developed methodology is used to model a practical fabrication process of p-type doping formation in graded CdSeTe absorbers and to study the effect of alloy stoichiometry on the doping activation.

14 SOLAR ENERGY↗

Controlled Dy-doping to nickel-rich cathode materials in high temperature aerosol synthesis

Layered nickel-rich materials are promising next-generation cathode materials for lithium ion batteries due to their high capacity and low cost. However, the poor thermal stability and longtime cycling performance hinders the commercial applications of high nickel materials. Doping with heteroatoms has been an effective approach for improving electrochemical performance of cathode materials. Controlling doping concentration and geometrical distribution is desired for optimal electrochemical performance, but it is challenging in traditional co-precipitation methods. In this work, controlled dysprosium (Dy) doping to NCM811 was studied in an aerosol synthesis method by controlling the precursor concentrations and heating parameters. The obtained materials were characterized by SEM, XRD, and XPS, and their electrochemical properties and thermal stability were evaluated. By controlling the doping concentration (1.5%), Dy-doped NCM811 was improved simultaneously in long-term cycling and high-rate performance. Here, the thermal-chemical stability of the Dy-doped cathode materials was examined in a microflow reactor with a mass spectrometer. The results showed that Dy-doping shifted the O 2 onset temperature to a higher temperature and reduced O 2 release by 80%, thus dramatically increasing the thermal-chemical stability and improving the fire safety of cathode materials. Since high temperature aerosol synthesis is a low-cost and scalable method, the findings in this work have broad implications for commercial synthesis of novel materials with controlled doping modification to achieve high electrochemical performance and safety in lithium ion batteries.

25 ENERGY STORAGE↗

Infrared-optical spectroscopy of transparent conducting perovskite (La,Ba)SnO{sub 3} thin films

We have performed optical transmission, reflection, spectroscopic ellipsometry, and Hall effect measurements on the electron-doped La{sub x}Ba{sub 1–x}SnO{sub 3} (x = 0.04) transparent thin films. From the infrared Drude response and plasma frequency analysis we determine the effective mass of the conducting electron m* = 0.35m{sub 0}. In the visible-UV region the optical band gap shifts to high energy in (La,Ba)SnO{sub 3} by 0.18 eV compared with undoped BaSnO{sub 3} which, in the context of the Burstein-Moss analysis, is consistent with the infrared-m*. m* of BaSnO{sub 3} is compared with other existing transparent conducting oxides (TCO), and implication on search for high-mobility TCO compounds is discussed.

36 MATERIALS SCIENCE↗

Critical boron-doping levels for generation of dislocations in synthetic diamond

Defects induced by boron doping in diamond layers were studied by transmission electron microscopy. The existence of a critical boron doping level above which defects are generated is reported. This level is found to be dependent on the CH{sub 4}/H{sub 2} molar ratios and on growth directions. The critical boron concentration lied in the 6.5–17.0 × 10{sup 20}at/cm{sup 3} range in the 〈111〉 direction and at 3.2 × 10{sup 21 }at/cm{sup 3} for the 〈001〉 one. Strain related effects induced by the doping are shown not to be responsible. From the location of dislocations and their Burger vectors, a model is proposed, together with their generation mechanism.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Optical characterization of Mg-doped ZnO thin films deposited by RF magnetron sputtering technique

This paper reports the in-depth analysis on optical characteristics of magnesium (Mg) doped zinc oxide (ZnO) thin films grown on p-silicon (Si) substrates by RF magnetron sputtering technique. The variable angle ellipsometer is used for the optical characterization of as-deposited thin films. The optical reflectance, transmission spectra and thickness of as-deposited thin films are measured in the spectral range of 300-800 nm with the help of the spectroscopic ellipsometer. The effect of Mg-doping on optical parameters such as optical bandgap, absorption coefficient, absorbance, extinction coefficient, refractive Index and dielectric constant for as-deposited thin films are extracted to show its application in optoelectronic and photonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Unidirectional Magneto-Resistance in Modulation-Doped Magnetic Topological Insulators

Nonlinear unidirectional spin Hall magnetoresistance (USMR) has been reported in heavy metal/ferromagnet bilayers, which could be employed as an effective method in detecting the magnetization orientation in spintronic devices with 2-terminal geometry. Recently, another unidirectional magnetoresistance (UMR) was reported in magnetic topological insulator (TI)-based heterostructures at cryogenic temperature, whose amplitude is orders of magnitude larger than the USMR measured in heavy metal-based magnetic heterostructures at room temperature. Here, we report the UMR effect in the modulation-doped magnetic TI structures. This UMR arises due to the interplay between the magnetic dopant’s magnetization and the current-induced surface spin polarization, when they are parallel or antiparallel to each other in the TI material. By varying the dopant’s position in the structure, we reveal that the UMR is mainly originating from the interaction between the magnetization and the surface spin-polarized carriers (not bulk carriers). Furthermore, from the magnetic field-, the angular rotation-, and the temperature-dependence, we highlight the correlation between the UMR effect and the magnetism in the structures. The large UMR versus current ratio in TI-based magnetic bilayers promises the easy readout in TI-based spintronic devices with 2-terminal geometry.

42 ENGINEERING↗

Nitrogen-doped char as a catalyst for wet oxidation of phenol-contaminated water

Catalytic wet oxidation (CWO) of aqueous effluents rich in organic compounds is a very promising technology for the treatment of liquid wastes from biomass conversion processes. CWO reactions occur through the formation of free radical species, produced in the presence of an oxidant, which act on organic contaminates in the effluent. Although the reaction is well known, there exists a lack of affordable catalysts to conduct this process at the lower temperatures and pressures in novel bioenergy processes. Here, this study assessed the catalytic effect of nitrogen-doped chars as such an option. Phenol in aqueous solution was used as a model waste effluent. Treatment was conducted at moderate temperatures (190 to 260 °C), oxygen partial pressure of 1 MPa, and reaction times of 15, 30, and 45 min in stainless steel and glass-lined tube reactors. High pressure liquid chromatography (HPLC) analyses of the products quantified phenol and by-product concentrations used in the calculation of reaction activation energy. The char catalyst was studied by X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and scanning electron microscopy (SEM) in order to gain insight into its structure and surface composition. The results indicate that nitrogen-doped char catalysts accelerate the oxidation of phenol by decreasing its reaction activation energy from 82.2 kJ/mol (non-catalyzed) to 40.4 kJ/mol (catalyzed). An analysis from first principles using density functional theory (DFT) was conducted to ascertain which N functional group has the most significant impact on free radical formation in the presence of oxygen. Among all the N functional groups studied, the dipyridinic functional groups showed the most promising characteristics to facilitate the formation of hydroxyl free radicals.

Advanced Oxidation Processes for Organic Pollutant↗

Atomic-scale 3D structural dynamics and functional degradation of Pt alloy nanocatalysts during the oxygen reduction reaction

Pt-based electrocatalysts are the primary choice for fuel cells due to their superior oxygen reduction reaction (ORR) activity. To enhance ORR performance and durability, extensive studies have investigated transition metal alloying, doping, and shape control to optimize the three key governing factors for ORR: geometry, local chemistry, and strain of their surface and subsurface. However, systematic optimization remains incomplete, as it requires an atomic-scale understanding of these factors and their dynamics over potential cycling, as well as their relationship to ORR activity. Here, we implement neural network-assisted atomic electron tomography to measure the 3D atomic structural dynamics and their effects on the functional degradation of PtNi alloy catalysts. Our results reveal that PtNi catalysts undergo shape changes, surface alloying, and strain relaxation during cycling, which can be effectively mitigated by Ga doping. By combining geometry, local chemistry, and strain analysis, we calculated the changes in ORR activity over thousands of cycles and observed that Ga doping leads to higher initial activity and greater stability. These findings offer a pathway to understanding 3D atomic structural dynamics and their relation to ORR activity during cycling, paving the way for the systematic design of durable, high-efficiency nanocatalysts.

Jeong, Chaehwa↗

Microstructure, crystallization and shape memory behavior of titania and yttria co-doped zirconia

Small volume zirconia ceramics with few or no grain boundaries have been demonstrated recently to exhibit the shape memory effect. To explore the shape memory properties of yttria doped zirconia (YDZ), it is desirable to develop large, microscale grains, instead of submicron grains that result from typical processing of YDZ. In this paper, we have successfully produced single crystal micro-pillars from microscale grains encouraged by the addition of titania during processing. Titania has been doped into YDZ ceramics and its effect on the grain growth, crystallization and microscale elemental distribution of the ceramics have been systematically studied. With 5 mol% titania doping, the grain size can be increased up to ~4 μm, while retaining a large quantity of the desired tetragonal phase of zirconia. Finally, micro-pillars machined from tetragonal grains exhibit the expected shape memory effects where pillars made from titania-free YDZ would not.

36 MATERIALS SCIENCE↗

Enhancement‐Mode PEDOT:PSS Organic Electrochemical Transistors Using Molecular De‐Doping

Abstract Organic electrochemical transistors (OECTs) show great promise for flexible, low‐cost, and low‐voltage sensors for aqueous solutions. The majority of OECT devices are made using the polymer blend poly(ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS), in which PEDOT is intrinsically doped due to inclusion of PSS. Because of this intrinsic doping, PEDOT:PSS OECTs generally operate in depletion mode, which results in a higher power consumption and limits stability. Here, a straightforward method to de‐dope PEDOT:PSS using commercially available amine‐based molecular de‐dopants to achieve stable enhancement‐mode OECTs is presented. The enhancement‐mode OECTs show mobilities near that of pristine PEDOT:PSS (≈2 cm 2 V −1 s −1 ) with stable operation over 1000 on/off cycles. The electron and proton exchange among PEDOT, PSS, and the molecular de‐dopants are characterized to reveal the underlying chemical mechanism of the threshold voltage shift to negative voltages. Finally, the effect of the de‐doping on the microstructure of the spin‐cast PEDOT:PSS films is investigated.

Keene, Scott T.↗

Room temperature de Haas–van Alphen effect in silicon nanosandwiches

The negative-U impurity stripes confining the edge channels of semiconductor quantum wells are shown to allow the effective cooling inside in the process of the spin-dependent transport. The aforesaid also promotes the creation of composite bosons and fermions by the capture of single magnetic flux quanta at the edge channels under the conditions of low sheet density of carriers, thus opening new opportunities for the registration of quantum kinetic phenomena in weak magnetic fields at high temperatures up to the room temperature. As a certain version noted above, we present the first findings of the high temperature de Haas–van Alphen (300 K) and quantum Hall (77 K) effects in the silicon sandwich structure that represents the ultranarrow, 2 nm, p-type quantum well (Si-QW) confined by the delta barriers heavily doped with boron on the n-type Si (100) surface. These data appear to result from the low density of single holes that are of small effective mass in the edge channels of p-type Si-QW because of the impurity confinement by the stripes consisting of the negative-U dipole boron centers which seems to give rise to the efficiency reduction of the electron–electron interaction.

36 MATERIALS SCIENCE↗

Confirmation of Incorporation of Cu and Se Ions in Applied p- and n-Type-Doped Sb2S3 by Photoemission Spectroscopy

The effect of incorporating copper (Cu) and selenium (Se) ions into stibnite (Sb2S3) lattice was investigated using x-ray photoelectron spectroscopy (XPS). The incorporation of Cu and Se ions was verified by comparing the XPS spectra of the undoped (amorphous Sb2S3), doped (p and n-doped) and pure Se and Cu-acetate powders. The main photoelectron Cu 2p(1/2) (951.8 eV) and Cu 2p(3/2) (932.1 eV) lines derived from the Cu-doped and Cu-acetate powder samples were clearly observed, whereas in the undoped sample, none of the characteristic lines of Cu were detected. The Se Auger line (138.6 eV), the only line of Se which does not coincide with the lines of Sb and S, was successfully detected in an Se-doped XPS sample and the spectrum of pure Se, while Se in the undoped sample was not found. Further, the XPS measurements revealed the relative amounts of Cu and Se in antimony sulfide, as well as the oxidation state of copper incorporated into the matrix.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The Photorefractive and Photovoltaic Properties of a Composite Based on Ferroelectric Polymer Doped with Carbon Nanotubes

The photorefractive effect is obtained in a composite of a ferroelectric polymer (polyvinylidene fluoride with trifluoroethylene (P(VDF/TrFE)) and single-walled carbon nanotubes (SWCNTs), which serve simultaneously as non-linear optical chromophores and spectral sensitizers to a 1064-nm laser beam. It is established that the presence of internal field in the ferroelectric makes it possible to measure the photorefractive effect in the absence of applied external field. Undoped films of VDF/TrFE copolymer are not photosensitive and do not exhibit the bulk photovoltaic effect (BPE). BPE is observed (along with the photosensitivity) in polarized samples, when carbon nanotubes are introduced into the copolymer.

36 MATERIALS SCIENCE↗

Strongly Correlated Charge Density Wave in La 2 – x Sr x CuO 4 Evidenced by Doping-Dependent Phonon Anomaly

The discovery of charge-density-wave-related effects in the resonant inelastic x-ray scattering spectra of cuprates holds the tantalizing promise of clarifying the interactions that stabilize the electronic order. In this paper, we report a comprehensive resonant inelastic x-ray scattering study of La 2 – x Sr x CuO 4 finding that charge-density wave effects persist up to a remarkably high doping level of x = 0.21 before disappearing at x = 0.25 . The inelastic excitation spectra remain essentially unchanged with doping despite crossing a topological transition in the Fermi surface. This indicates that the spectra contain little or no direct coupling to electronic excitations near the Fermi surface, rather they are dominated by the resonant cross section for phonons and charge-density-wave-induced phonon softening. We interpret our results in terms of a charge-density wave that is generated by strong correlations and a phonon response that is driven by the charge-density-wave-induced modification of the lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ohmic contact formation in semi-insulating GaAs using shallow heavily doped p-type layers

The paper describes a simple, safe, and effective method for forming shallow zinc-doped p-type layers on chromium-doped semiinsulating GaAs, using an open-tube diffusion technique. The resulting peak dopant concentration for the 850-C diffusion was 10 to the 20th/cu cm. The contact resistance of ohmic contacts fabricated on these layers was found to be about 0.00005 ohm/sq cm. The variation of the contact resistance across the wafer reflected the variation of the doping concentration.

Bose, Amitava↗