Spontaneous Phase Balancing in Delta-Connected Single-Phase Droop-Controlled Inverters
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Engineering↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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A Novel Interfacing Technique for Distributed Hybrid Simulations Combining EMT and Transient Stability Models
With steady increase of power electronic devices and nonlinear dynamic loads in large scale AC/DC systems, the traditional hybrid simulation method, which incorporates these components into a single EMT subsystem and hence causes great difficulty for network partitioning and significant deterioration in simulation efficiency. To resolve these issues, a novel distributed hybrid simulation method is proposed in this paper. The key to realize this method is a distinct interfacing technique, which includes: i) a new approach based on the two-level Schur complement to update the interfaces by taking full consideration of the couplings between different EMT subsystems; and ii) a combined interaction protocol to further improve the efficiency while guaranteeing the simulation accuracy. The advantages of the proposed method in terms of both efficiency and accuracy have been verified by using it for the simulation study of an AC/DC hybrid system including a two-terminal VSC-HVDC and nonlinear dynamic loads.
Distributed hybrid simulation↗
A study on the impact of mid-gap defects on vertical GaN diodes
GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. Here, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically.
42 ENGINEERING↗
Developing of Quaternary Pumped Storage Hydropower for Dynamic Studies
Quaternary pumped storage hydropower (Q-PSH) technology, as one of the new advanced-PSH technology, has been developed by taking advantage of Conventional-PSH (C-PSH) and Adjustable Speed-PSH (AS-PSH). By combining adjustable-speed pump unit and conventional hydropower turbine unit in the quaternary configuration, Q-PSH has the more competitive capability of providing fast power support in the future high renewable penetrated power system. Acting as energy storage (ES), Q-PSH provides promising power supply to deal with the uncertainty and variability from renewable energy generation. This paper focuses on the dynamic modeling of Q-PSH technology employing full-converter machine and the impact of Q-PSH on the frequency response in a system. The detailed model of Q-PSH is developed and implemented in the IEEE 14-bus system based on GE Positive Sequence Load Flow (PSLF) platform, which captures the dynamic of multiple operation modes, especially hydraulic short-circuit (HSC) operation mode. Several cases are set up to reveal the advantages of Q-PSH technology when power electronic based renewable energy generation is deployed in the system. Sensitivity studies of the controller in pump governor show the impact of parameters in pump response performance. The comparison case illustrates the impact of frequency response provided by the Q-PSH in the system.
dynamic modeling↗
Oxygen vacancy migration and impact on high voltage DC polarization in 0.8BaTiO 3 –0.2BiZn 0.5 Ti 0.5 O 3
Electrical polarization and defect transport are examined in 0.8BaTiO 3 –0.2BiZn 0.5 Ti 0.5 O 3 , an attractive capacitor material for high power electronics. Oxygen vacancies are suggested to be the majority charge carrier at or below 250°C with a grain conduction hopping activation energy of 0.97 eV and 0.92 eV for thermally stimulated depolarization current (TSDC) and impedance spectroscopy measurements, respectively. At higher temperature, thermally generated electronic conduction with an activation energy of 1.6 eV is dominant. Significant oxygen vacancy concentration is indicated (up to ~1%) due to cation vacancy formation (i.e., acceptor defects) from observed Bi (and likely Zn) volatility. Oxygen vacancy diffusivity is estimated to be 10 -12.8 cm 2 /s at 250°C. Low diffusivity and high activation energies are indicative of significant defect interactions. Dipolar oxygen vacancy defects are also indicated, with an activation energy of 0.59 eV from TSDC measurements. In conclusion, the large oxygen vacancy content leads to a short lifetime during high voltage (30 kV/cm), high temperature (250°C) direct current (DC) electrical measurements.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Hybrid-Electric Turbocharger and High-Speed SiC Variable-Frequency Drive Using Sensorless Control Algorithm
Electrically assisted engine boosting systems lend themselves to better throttle response, wider effective operating ranges, and can provide the ability to extract excess energy during deceleration and high-load events (and store it in a vehicle's onboard batteries). This can lead to better overall vehicle performance, emissions, and efficiency while allowing for further engine downsizing and increased power density. In this research effort, a hybrid-electric turbocharger, variable-frequency drive (VFD), and novel sensorless control algorithm were developed. An 11 kW permanent-magnet (PM) machine was coupled to a commercial turbocharger via an in-line, bolt-on housing attached to the compressor inlet. A high-efficiency, high-temperature VFD, consisting of custom control and power electronics, was also developed. The VFD uses SiC MOSFETS to achieve high-switching frequency and can be cooled using an existing engine coolant loop operating at up to 105 °C at an efficiency greater than 98%. A digital sliding mode-observer sensorless speed control algorithm was created to command and regulate speed and achieved ramp rates of over 68,000 rpm/s. A two-machine benchtop motor/generator test stand was constructed for initial testing and tuning of the VFD and sensorless control algorithm. A gas blow-down test stand was constructed to test the mechanical operation of the hybrid-electric turbocharger and speed control using the VFD. In addition, a liquid-pump cart was assembled for high-temperature testing of the VFD. Initial on-engine testing is planned for later this year. This paper intends to present a design overview of the in-line, hybrid-electric device, VFD, and performance characterization of the electronics and sensorless control algorithm.
Engineering↗
Physics-Informed Neural Networks for Heat Transfer Problems
Abstract Physics-informed neural networks (PINNs) have gained popularity across different engineering fields due to their effectiveness in solving realistic problems with noisy data and often partially missing physics. In PINNs, automatic differentiation is leveraged to evaluate differential operators without discretization errors, and a multitask learning problem is defined in order to simultaneously fit observed data while respecting the underlying governing laws of physics. Here, we present applications of PINNs to various prototype heat transfer problems, targeting in particular realistic conditions not readily tackled with traditional computational methods. To this end, we first consider forced and mixed convection with unknown thermal boundary conditions on the heated surfaces and aim to obtain the temperature and velocity fields everywhere in the domain, including the boundaries, given some sparse temperature measurements. We also consider the prototype Stefan problem for two-phase flow, aiming to infer the moving interface, the velocity and temperature fields everywhere as well as the different conductivities of a solid and a liquid phase, given a few temperature measurements inside the domain. Finally, we present some realistic industrial applications related to power electronics to highlight the practicality of PINNs as well as the effective use of neural networks in solving general heat transfer problems of industrial complexity. Taken together, the results presented herein demonstrate that PINNs not only can solve ill-posed problems, which are beyond the reach of traditional computational methods, but they can also bridge the gap between computational and experimental heat transfer.
Engineering↗
Performance and reliability of β-Ga 2 O 3 Schottky barrier diodes at high temperature
Beta-gallium oxide (ß-Ga 2 O 3 ) is an ultrawide bandgap semiconductor that has potential for power electronic applications and devices operating at high temperatures. Particularly important for these applications are its 4.9 eV bandgap, facile electron doping, and the ability to grow ß-Ga 2 O 3 crystals from the melt. In this work, vertical ß-Ga 2 O 3 Schottky barrier diodes were fabricated using Pt Schottky and Ti-based Ohmic contacts and Au contact pads on unintentionally doped n-type, (2¯01)-oriented single crystal substrates. The diode’s temperature-dependent electrical properties up to 400°C were investigated, and the Pt/Ga 2 O 3 Schottky barrier height was determined to be close to 1.2 eV. The degradation of the contacts over multiple cycles up to 400°C was observed, resulting in a significant increase in series resistance of the diodes by 1000× at ambient temperature after they were cycled. According to electron microscopy measurements, this degradation is likely due in part to the migration and oxidation of Ti at the top surface of the Au contact pads. This degradation highlights the need for further research and development to ensure stable Ohmic and Schottky contacts to Ga 2 O 3 at temperatures above 400°C.
36 MATERIALS SCIENCE↗
Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
Atomic layer etching driven by self-limiting thermal reactions has recently been developed as a highly conformal and isotropic technique for low damage atomic scale material removal by sequential exposures of vapor phase reactants. Gallium oxide (Ga2O3) is currently among the materials of interest due to a large variety of applications including power electronics, solar cells, gas sensors, and photon detectors. In this study, Ga2O3 was deposited by plasma enhanced atomic layer deposition using trimethylgallium [TMG, Ga(CH3)3] and O2 plasma at a substrate temperature of 200 °C. We report a newly developed method for Ga2O3 thermal atomic layer etching, in which surface modification is achieved through HF exposure resulting in a gallium fluoride surface layer, and then removed through volatile product formation via ligand exchange with TMG. Saturation of the precursor exposure at a substrate temperature of 300 °C resulted in an etch rate of 1.0 ± 0.1 Å/cycle for amorphous Ga2O3. Uniformity and conformality of the atomic layer etching process were confirmed via atomic force microscopy with a measured surface roughness of 0.55 ± 0.05 nm that remains unchanged after etching. The use of TMG for etching may expand available precursors for atomic layer etching processes, while allowing for both etching and deposition of Ga2O3 using the same metalorganic precursor.
Hatch, Kevin A. (ORCID:0000000283118623)↗
Gallium Oxide Techno-Economic Analysis for the Wide Bandgap Semiconductor Market
More than 30% of electrical energy passes through power electronics today with speculation that in the next decade this could grow to 80%. The wide bandgap semiconductor market is already approaching $1 billon USD in 2019 and is projected to be almost $7 billion USD in 2028. Even with its high cost, SiC, is starting to dislodge the incumbent Si technology in some applications, such as hybrid and electric vehicles, due to smaller size, and higher efficiency. We review and report the IHS Markit’s market predictions for wide bandgap semiconductor technologies, and highlight the technoeconomic analysis results for the manufacturing cost of Ga2O3 wafers. Specifically, we focus on the potential for Ga2O3 to be more economically advantageous than SiC using current manufacturing methods and then identify opportunities where research can further reduce the volume cost of Ga2O3 wafers.
28 EE - Advanced Manufacturing Office (EE-5A)↗
Deep-ultraviolet transparent conducting SrSnO 3 via heterostructure design
Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO 3 /La:SrSnO 3 /GdScO 3 (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO 3 from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO 3 . This led to a modulation of carrier density from 10 18 to 10 20 cm −3 , with room temperature mobilities ranging from 40 to 140 cm 2 V −1 s −1 . The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime.
Science & Technology - Other Topics↗
Electrical power generation from moderate-temperature radiative thermal sources
Moderate-temperature thermal sources (100° to 400°C) which radiate waste heat are often the by-product of mechanical work, chemical or nuclear reactions, or information processing. We demonstrate conversion of thermal radiation into electrical power using a bipolar grating-coupled complementary metal-oxide-silicon (CMOS) tunnel diode. A two-step photon-assisted tunneling charge pumping mechanism results in separation of charge carriers in pn-junction wells leading to a large open-circuit voltage developed across a load. Electrical power generation from a broadband blackbody thermal source has been experimentally demonstrated with converted power densities of 27 to 61 microwatts per square centimeter for thermal sources between 250° and 400°C. Scalable, efficient conversion of radiated waste heat into electrical power can be used to reduce energy consumption or to power electronics and sensors.
30 DIRECT ENERGY CONVERSION↗
Suppression of Alfvén modes on NSTX-U with outboard beam injection
In this paper we present data from experiments on NSTX-U where it is shown for the first time that small amounts of high pitch-angle beam ions can strongly suppress the counter-propagating Global Alfvén Eigenmodes (GAE). GAE have been implicated in the redistribution of fast ions and modification of the electron power balance in previous experiments on NSTX. The ability to predict the stability of Alfvén modes, and developing methods to control them, is important for fusion reactor like the International Tokamak Experimental Reactor (ITER) which are heated by a large population of non-thermal, super-Alfvénic ions consisting of fusion generated alphas and beam ions injected for current profile control. We present a qualitative interpretation of these observations using an analytic model of the Doppler-shifted ion-cyclotron resonance drive responsible for GAE instability which has an important dependence on k⊥ρL. A quantitative analysis of this data with the HYM stability code predicts both the frequencies and instability of the GAE prior to, and suppression of the GAE after the injection of high pitch-angle beam ions.
Energetic particles↗
Dual Active Bridge based DC Transformer LabVIEW FPGA Control Code [SWR-16-25]
In the area of power electronics control, Field Programmable Gate Arrays (FPGAs) have the capability to outperform their Digital Signal Processor (DSP) counterparts due to the FPGA’s ability to implement true parallel processing and therefore facilitate higher switching frequencies, higher control bandwidth, and/or enhanced functionality. National Instruments (NI) has developed two platforms, Compact RIO (cRIO) and Single Board RIO (sbRIO), which combine a real-time processor with an FPGA. The FPGA can be programmed with a subset of the well-known LabVIEW graphical programming language. The candidate software implements complete control algorithms in LabVIEW FPGA for a DC Transformer (DCX) based on a dual active bridge (DAB). A DCX is an isolated bi-directional DC-DC converter designed to operate at unity conversion ratio, M, defined by where Vin is the primary-side DC bus voltage, Vout is the secondary-side DC bus voltage, and n is the turns ratio of the embedded high frequency transformer (HFX). The DCX based on a DAB incorporates two H-bridges, a resonant inductor, and an HFX to provide this functionality. The candidate software employs phase-shift modulation of the two H-bridges and a feedback loop to regulate the conversion ratio at unity. The software also includes alarm-handling capabilities as well as debugging and tuning tools. The software fits on the Xilinx Virtex V LX110 FPGA embedded in the NI cRIO-9118 FPGA chassis, and with a 40 MHz base clock, supports a modulation update rate of 40 MHz, and user-settable switching frequencies and synchronized control loop update rates of tens of kHz.
Source record↗
AGILE GETRS
AGILE GETRS provides an optimized implementation of DETRS that is faster than vendor optimized libraries for small (< 4000) problem sizes. These small problems sizes are of interest to researchers in the Grid Research Integration and Deployment Center (GRID-C) researching real-time power electronics simulations. In addition to our implementation of DETRS, this code provides a test using Google Benchmark which generates matrices of various sizes, fills them with random numbers, runs GETRS, verifies the solution is correct and reports average runtime and other performance metrics.
Hahn, Steven [Oak Ridge National Laboratory (ORNL)↗
Continual Load Modelling
Lack of harmonic rich datasets limits the ability to have fine grained load models at grid edge. We aim to develop mathematical models for power electronic based load combinations at grid edge to help replicate current and future evolving load conditions
Vasios, Orestis↗
System Validation Platform Working Directories
A suite of software tools used to interface with power electronic equipment for laboratory testing and device certification. They are typically used as equipment drivers with using the System Validation Platform (SVP) graphical user interface (GUI). Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525. SAND2021-1185 O
Johnson, JayT↗
Ard [SWR-25-18]
A wind farm optimization suite for wind energy that is built for modular, gradient-enabled multi-disciplinary and multi-fidelity optimizations. Dig into wind farm design. An ard is a type of simple and lightweight plow, used through the single-digit centuries to prepare a farm for planting. The intent of Ard is to be a modular, full-stack multi-disciplinary optimization tool for wind farms. The problem with wind farms is that they are complicated, multi-disciplinary objects. They are aerodynamic machines, with complicated control systems, power electronic devices, social and political objects, and the core value (and cost) of complicated financial instruments. Moreover, the design of one of these aspects affects all the rest! Ard seeks to make plant-level design choices that can incorporate these different aspects and their interactions to make wind energy projects more successful.
Frontin, Cory [National Renewable Energy Laborator↗