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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,369 records · Page 76
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Incorporation of La in epitaxial SrTiO{sub 3} thin films grown by atomic layer deposition on SrTiO{sub 3}-buffered Si (001) substrates

Strontium titanate, SrTiO{sub 3} (STO), thin films incorporated with lanthanum are grown on Si (001) substrates at a thickness range of 5–25 nm. Atomic layer deposition (ALD) is used to grow the La{sub x}Sr{sub 1−x}TiO{sub 3} (La:STO) films after buffering the Si (001) substrate with four-unit-cells of STO deposited by molecular beam epitaxy. The crystalline structure and orientation of the La:STO films are confirmed via reflection high-energy electron diffraction, X-ray diffraction, and cross-sectional transmission electron microscopy. The low temperature ALD growth (∼225 °C) and post-deposition annealing at 550 °C for 5 min maintains an abrupt interface between Si (001) and the crystalline oxide. Higher annealing temperatures (650 °C) show more complete La activation with film resistivities of ∼2.0 × 10{sup −2} Ω cm for 20-nm-thick La:STO (x ∼ 0.15); however, the STO-Si interface is slightly degraded due to the increased annealing temperature. To demonstrate the selective incorporation of lanthanum by ALD, a layered heterostructure is grown with an undoped STO layer sandwiched between two conductive La:STO layers. Based on this work, an epitaxial oxide stack centered on La:STO and BaTiO{sub 3} integrated with Si is envisioned as a material candidate for a ferroelectric field-effect transistor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The electronic and magnetic properties of La{sub 0.85}Zr{sub 0.15}MnO{sub 3} deposited on SrTiO{sub 3} and MgO substrates

The electronic and magnetic properties of tetravalent-ion-doped La{sub 0.85}Zr{sub 0.15}MnO{sub 3} (LZMO) thin films that were epitaxially grown on SrTiO{sub 3} (STO) and MgO substrates were studied using temperature-dependent x-ray diffraction (XRD), x-ray absorption near-edge structure, x-ray linear dichroism, and x-ray magnetic circular dichroism at the Mn L{sub 3,2}- and K-edge. XRD studies reveal that the LZMO thin films have compressive and tensile strains (along the c-axis) on the STO and MgO substrates, respectively. As the temperature is reduced from room temperature to below magnetic transition temperature, the preferentially occupied Mn majority-spin e{sub g} orbital changes from the in-plane d{sub x}{sup 2}{sub -y}{sup 2} to the out-of-plane d{sub 3z}{sup 2}{sub -r}{sup 2} orbital for LZMO/STO, and vice versa for LZMO/MgO. Experimental results suggest that the new hopping path that is mediated by the Mn{sup 2+} ions triggers a stronger d{sub 3z}{sup 2}{sub -r}{sup 2} orbital ordering of Mn{sup 3+} ions and enhances the ferromagnetic coupling between the Mn spin moments of t{sub 2g} electrons in LZMO/STO, whereas the strong tensile strain stabilizes the d{sub x}{sup 2}{sub -y}{sup 2} orbital by inducing lattice distortions of the MnO{sub 6} octahedra in LZMO/MgO.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Growth of InGaAs/GaAsP multiple quantum well solar cells on mis-orientated GaAs substrates

The effects of growth temperature on the properties of InGaAs/GaAsP multiple quantum well (MQW) solar cells on various mis-orientated GaAs substrates were studied using metalorganic vapor phase epitaxy. Thickness modulation effect caused by mismatch strain of InGaAs/GaAsP could be suppressed by low growth temperature. Consequently, abrupt MQWs with strong light absorption could be deposited on mis-oriented substrates. However, degradation in crystal quality and impurity incorporation are the main drawbacks with low temperature growth because they tend to strongly degraded carrier transport and collection efficiency. MQW solar cells grown at optimized temperature showed the better conversion efficiency. The further investigation should focus on improvement of crystal quality and background impurities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Cost effective nanostructured copper substrates prepared with ultrafast laser pulses for explosives detection using surface enhanced Raman scattering

Ultrafast laser pulses induced surface nanostructures were fabricated on a copper (Cu) target through ablation in acetone, dichloromethane, acetonitrile, and chloroform. Surface morphological information accomplished from the field emission scanning electron microscopic data demonstrated the diversities of ablation mechanism in each case. Fabricated Cu substrates were utilized exultantly to investigate the surface plasmon (localized and propagating) mediated enhancements of different analytes using surface enhance Raman scattering (SERS) studies. Multiple utility of these substrates were efficiently demonstrated by collecting the SERS data of Rhodamine 6G molecule and two different secondary explosive molecules such as 5-amino-3-nitro-l,2,4-triazole and trinitrotoluene on different days which were weeks apart. We achieved significant enhancement factors of >10{sup 5} through an easily adoptable cleaning procedure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Influence of composition and substrate miscut on the evolution of (105)-terminated in-plane Si{sub 1−x}Ge{sub x} quantum wires on Si(001)

Isolated in-plane wires on Si(001) are promising nanostructures for quantum transport applications. They can be fabricated in a catalyst-free process by thermal annealing of self-organized Si{sub 1−x}Ge{sub x} hut clusters. Here, we report on the influence of composition and small substrate miscuts on the unilateral wire growth during annealing at 570 °C. The addition of up to 20% of Si mainly affects the growth kinetics in the presence of energetically favorable sinks for diffusing Ge atoms, but does not significantly change the wire base width. For the investigated substrate miscuts of <0.12°, we find geometry-induced wire tapering, but no strong influence on the wire lengths. Miscuts <0.02° lead to almost perfect quantum wires terminated by virtually step-free (105) and (001) facets over lengths of several 100 nm. Generally, the investigated Si{sub 1−x}Ge{sub x} wires are metastable: Annealing at ≥600 °C under otherwise identical conditions leads to the well-known coexistence of Si{sub 1−x}Ge{sub x} pyramids and domes.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Alumina nanoparticle/polymer nanocomposite dielectric for flexible amorphous indium-gallium-zinc oxide thin film transistors on plastic substrate with superior stability

In this study, the Al{sub 2}O{sub 3} nanoparticles were incorporated into polymer as a nono-composite dielectric for used in a flexible amorphous Indium-Gallium-Zinc Oxide (a-IGZO) thin-film transistor (TFT) on a polyethylene naphthalate substrate by solution process. The process temperature was well below 100 °C. The a-IGZO TFT exhibit a mobility of 5.13 cm{sup 2}/V s on the flexible substrate. After bending at a radius of 4 mm (strain = 1.56%) for more than 100 times, the performance of this a-IGZO TFT was nearly unchanged. In addition, the electrical characteristics are less altered after positive gate bias stress at 10 V for 1500 s. Thus, this technology is suitable for use in flexible displays.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Towards large size substrates for III-V co-integration made by direct wafer bonding on Si

We report the first demonstration of 200 mm InGaAs-on-insulator (InGaAs-o-I) fabricated by the direct wafer bonding technique with a donor wafer made of III-V heteroepitaxial structure grown on 200 mm silicon wafer. The measured threading dislocation density of the In{sub 0.53}Ga{sub 0.47}As (InGaAs) active layer is equal to 3.5 × 10{sup 9} cm{sup −2}, and it does not degrade after the bonding and the layer transfer steps. The surface roughness of the InGaAs layer can be improved by chemical-mechanical-polishing step, reaching values as low as 0.4 nm root-mean-square. The electron Hall mobility in 450 nm thick InGaAs-o-I layer reaches values of up to 6000 cm{sup 2}/Vs, and working pseudo-MOS transistors are demonstrated with an extracted electron mobility in the range of 2000–3000 cm{sup 2}/Vs. Finally, the fabrication of an InGaAs-o-I substrate with the active layer as thin as 90 nm is achieved with a Buried Oxide of 50 nm. These results open the way to very large scale production of III-V-o-I advanced substrates for future CMOS technology nodes.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Solution-processed high-performance colloidal quantum dot tandem photodetectors on flexible substrates

We report a high-performance colloidal quantum dot (CQD)-based near-infrared tandem photodetector fabricated on flexible substrates via solution-processed method. The tandem photodetector on poly(ethylene terephthalate) substrates exhibited low dark current and high detectivities over ∼8.8 × 10{sup 11} Jones at near infrared range at −0.5 V bias and over ∼10{sup 13} Jones near 0 bias. The critical bend radii of ∼8 mm and ∼3 mm have been demonstrated for tensile and compressive bending, respectively. The performance of photodetectors remains stable under mechanical stress, making PbSe CQD material a promise candidate for flexible infrared sensing applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Tuning nucleation density of metal island with charge doping of graphene substrate

We have demonstrated that the island nucleation in the initial stage of epitaxial thin film growth can be tuned by substrate surface charge doping. This charge effect was investigated using spin density functional theory calculation in Fe-deposition on graphene substrate as an example. It was found that hole-doping can noticeably increase both Fe-adatom diffusion barrier and Fe inter-adatom repulsion energy occurring at intermediate separation, whereas electron-doping can decrease Fe-adatom diffusion barrier but only slightly modify inter-adatom repulsion energy. Further kinetic Monte Carlo simulation showed that the nucleation island number density can be increased up to six times larger under hole-doping and can be decreased down to ten times smaller under electron doping than that without doping. Our findings indicate a route to tailor the growth morphology of magnetic metal nanostructure for spintronics and plasmonic applications via surface charge doping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1 μs, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Effects of confinements on morphology of In{sub x}Ga{sub 1–x}As thin film grown on sub-micron patterned GaAs substrate: Elastoplastic phase field model

An elastoplastic phase field model is developed to investigate the role of lateral confinement on morphology of thin films grown heteroepitaxially on patterned substrates. Parameters of the model are chosen to represent In{sub x}Ga{sub 1-x}As thin films growing on GaAs patterned with SiO₂. We determined the effect of misfit strain on morphology of thin films grown in 0.5 μm patterns with non-uniform deposition flux. Growth of islands inside patterns can be controlled by non-uniformity of deposition flux, misfit strain between film and the substrate, and also strain energy relaxation due to plastic deformation. Our results show that the evolution of island morphology depends non-monotonically on indium content and associated misfit strain due to coupling between the plastic relaxation and the confinements effects. Low indium concentration (0%–40%) causes formation of instabilities with relatively long wavelengths across the width of the pattern. Low surface diffusion (due to low indium concentration) and fewer islands across the pattern (due to small misfit strain) lead to formation and growth of islands near the walls driven by overflow flux. Further increase in indium concentration (40%–75%) increases the lattice mismatch and surface diffusivity of the film, and also activates plastic deformation mechanism, which leads to coalescence of islands usually away from the edges. By further increasing the indium concentration (up to 100%), plastic deformation relaxes most of the strain energy density of the film, which prevents formation of instabilities in the film. Hence, in this case, islands are only formed near the walls.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Graphene folding on flat substrates

We present a combined experimental-theoretical study of graphene folding on flat substrates. The structure and deformation of the folded graphene sheet are experimentally characterized by atomic force microscopy. The local graphene folding behaviors are interpreted based on nonlinear continuum mechanics modeling and molecular dynamics simulations. Our study on self-folding of a trilayer graphene sheet reports a bending stiffness of about 6.57 eV, which is about four times the reported values for monolayer graphene. Our results reveal that an intriguing free sliding phenomenon occurs at the interlayer van der Waals interfaces during the graphene folding process. This work demonstrates that it is a plausible venue to quantify the bending stiffness of graphene based on its self-folding conformation on flat substrates. The findings reported in this work are useful to a better understanding of the mechanical properties of graphene and in the pursuit of its applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Photocatalytic and magnetic behaviors of BiFeO{sub 3} thin films deposited on different substrates

Single phase polycrystalline BiFeO{sub 3} thin films were grown on three different substrates via chemical solution deposition. Our results indicate that the band gap of as-prepared BiFeO{sub 3} films can be tuned (2.02–2.67 eV) by the grain size effects caused by the substrates. These BiFeO{sub 3} films show good photocatalytic properties by the degradation of Congo red solution under visible-light irradiation (λ{sub }> 400 nm). Additionally, weak ferromagnetic behaviors can be observed at room temperature in all the films, which should be correlated to the destruction of the incommensurate cycloid spin structure of BiFeO{sub 3} phase and the coexistence of Fe{sup 3+} and Fe{sup 2+} as confirmed by X-ray photoelectron spectroscopy.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Preparation and electrical transport properties of quasi free standing bilayer graphene on SiC (0001) substrate by H intercalation

We investigate the temperature dependent electrical transport properties of quasi-free standing bilayer graphene on 4H-SiC (0001) substrate. Three groups of monolayer epitaxial graphene and corresponding quasi-free standing bilayer graphene with different crystal quality and layer number homogeneity are prepared. Raman spectroscopy and atomic-force microscopy are used to obtain their morphologies and layer number, and verify the complete translation of buffer layer into graphene. The highest room temperature mobility reaches 3700 cm{sup 2}/V·s for the quasi-free standing graphene. The scattering mechanism analysis shows that poor crystal quality and layer number inhomogeneity introduce stronger interacting of SiC substrate to the graphene layer and more impurities, which limit the carrier mobility of the quasi-free standing bilayer graphene samples.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN

We fabricated AlGaN/GaN high electron mobility transistors (HEMTs) on h-BN/sapphire substrates and transferred them from the host substrates to copper plates using h-BN as a release layer. In current–voltage characteristics, the saturation drain current decreased by about 30% under a high-bias condition before release by self-heating effect. In contrast, after transfer, the current decrement was as small as 8% owing to improved heat dissipation: the device temperature increased to 50 °C in the as-prepared HEMT, but only by several degrees in the transferred HEMT. An effective way to improve AlGaN/GaN HEMT performance by a suppression of self-heating effect has been demonstrated.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗