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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,387 records · Page 77
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Atomic structure and bonding of the interfacial bilayer between Au nanoparticles and epitaxially regrown MgAl{sub 2}O{sub 4} substrates

A unique metal/oxide interfacial bilayer formed between Au nanoparticles and MgAl{sub 2}O{sub 4} substrates following thermal treatment is reported. Associated with the formation of the bilayer was the onset of an abnormal epitaxial growth of the substrate under the nanoparticle. According to the redistribution of atoms and the changes of their electronic structure probed across the interface by a transmission electron microscopy, we suggest two possible atomic models of the interfacial bilayer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature

In this paper, we report on investigation concerning the substrate-dependent thermal conductivity (k) of Aluminum Nitride (AlN) thin-films processed at low temperature by reactive magnetron sputtering. The thermal conductivity of AlN films grown at low temperature (<200 °C) on single-crystal silicon (Si) and amorphous silicon nitride (SiN) with thicknesses ranging from 100 nm to 4000 nm was measured with the transient hot-strip technique. The k values for AlN films on SiN were found significantly lower than those on Silicon consistently with their microstructures revealed by X-ray diffraction, high resolution scanning electron microscopy, and transmission electron microscopy. The change in k was due to the thermal boundary resistance found to be equal to 10 × 10{sup −9} Km{sup 2}W{sup −1} on SiN against 3.5 × 10{sup −9} Km{sup 2}W{sup −1} on Si. However, the intrinsic thermal conductivity was determined with a value as high as 200 Wm{sup −1}K{sup −1} whatever the substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25 nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850 °C for 10 min under atmospheric conditions, the resistivity of the ITO film was 5.2 mΩ cm. The fabricated LED up to 3 mm square surface emitted red light when the on-voltage was exceeded.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Preferred orientations of laterally grown silicon films over amorphous substrates using the vapor–liquid–solid technique

A novel method has been optimized so that adhesion layers are no longer needed to reliably deposit patterned gold structures on amorphous substrates. Using this technique allows for the fabrication of amorphous oxide templates known as micro-crucibles, which confine a vapor–liquid–solid (VLS) catalyst of nominally pure gold to a specific geometry. Within these confined templates of amorphous materials, faceted silicon crystals have been grown laterally. The novel deposition technique, which enables the nominally pure gold catalyst, involves the undercutting of an initial chromium adhesion layer. Using electron backscatter diffraction it was found that silicon nucleated in these micro-crucibles were 30% single crystals, 45% potentially twinned crystals and 25% polycrystals for the experimental conditions used. Single, potentially twinned, and polycrystals all had an aversion to growth with the (1 0 0) surface parallel to the amorphous substrate. Closer analysis of grain boundaries of potentially twinned and polycrystalline samples revealed that the overwhelming majority of them were of the 60° Σ3 coherent twin boundary type. The large amount of coherent twin boundaries present in the grown, two-dimensional silicon crystals suggest that lateral VLS growth occurs very close to thermodynamic equilibrium. It is suggested that free energy fluctuations during growth or cooling, and impurities were the causes for this twinning.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Large-sized out-of-plane stretchable electrodes based on poly-dimethylsiloxane substrate

This paper describes a reliable fabrication method of stretchable electrodes based on poly-dimethylsiloxane (PDMS) substrate. The electrode traces and pads were formed in out-of-plane structures to improve the flexibility and stretchability of the electrode array. The suspended traces and pads were attached to the PDMS substrate via parylene posts that were located nearby the traces and under the pads. As only conventional micro-electro-mechanical systems techniques were used, the out-of-plane electrode arrays were clearly fabricated at wafer level with high yield and reliability. Also, bi-layer out-of-plane electrodes were formed through additional fabrication steps in addition to mono-layer out-of-plane electrodes. The mechanical characteristics such as the stretchability, flexibility, and foldability of the fabricated electrodes were evaluated, resulting in stable electrical connection of the metal traces with up to 32.4% strain and up to 360° twist angle over 25 mm. The durability in stretched condition was validated by cyclic stretch test with 10% and 20% strain, resulting in electrical disconnection at 8600 cycles when subjected to 20% strain. From these results, it is concluded that the proposed fabrication method produced highly reliable, out-of-plane and stretchable electrodes, which would be used in various flexible and stretchable electronics applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Theoretical study of the interparticle interaction of nanoparticles randomly dispersed on a substrate

Metal nanoparticles exhibit the phenomenon of localized surface plasmon resonance (LSPR) due to the collective oscillation of their conduction electrons, which is induced by external electromagnetic radiation. The finite-differential time-domain (FDTD) method is widely used as an electromagnetic field analysis tool for nanoparticles. Although the influence of interparticle interactions is taken into consideration in the FDTD calculation for the plural particles configuration, the FDTD calculation of a random configuration is very difficult, particularly in the case of non-spherical particles. In this study, a theoretical calculation method incorporating interparticle interactions on a substrate with various particle shapes and sizes on a subwavelength scale is developed. The interparticle interaction is incorporated following FDTD calculation with an isolated single particle. This is explained systematically using a signal flow graph. Moreover, the mirror image effect of the substrate and the retardation effect are also taken into account in this method. The validity of this method is verified by calculations for simple arrangements of nanoparticles. In addition, it is confirmed that the method can improve the accuracy of predicted experimental results for Au nanoparticles prepared by the sputtering method, in terms of the plasmon peak wavelength. This method may enable the design of LSPR devices by controlling nanoparticle characteristics, such as the size, shape, and distribution density.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Transition among failure modes of the bending system with a stiff film on a soft substrate

Growing interest is being attracted by stretchable and flexible electronics recently due to their attractive characteristics, commercial potentials, and engineering challenges. In comparison with the system on a macroscopic scale, different failure modes are observed in a system with a thin film bonded on an elastomeric substrate. Furthermore, the experimental observations reveal that failure modes occur in turn with the increasing of thickness ratio of the film to substrate. In this paper, theoretical analysis is performed on the failure mechanism in this system with the focus on transitions among these failure modes based on the theory of fracture mechanics. The present theoretical predictions are coincident with related experiment results and can be used to guide the related structural design.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Fabrication of self-healing super-hydrophobic surfaces on aluminium alloy substrates

We present a method to fabricate a super-hydrophobic surface with a self-healing ability on an aluminium alloy substrate. The coatings are obtained by combining a two-step process (first, the substrate is immersed in a solution of HCl, HF and H{sub 2}O, and then in boiling water) and succeeding surface fluorination with a solution of poly(vinylidene-fluoride-co-hexafluoropropylene) and a fluoroalkyl silane. The morphological features and chemical composition were studied by scanning electron micrometry and energy-dispersive X-ray spectroscopy. The prepared super-hydrophobic aluminium surfaces showed hierarchical structures forming pores, petals and particles with a contact angle of 161° and a sliding angle of 3°.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Anisotropic surroundings effects on photo absorption of partially embedded Au nanospheroids in silica glass substrate

The influence of a directly adjacent or an anisotropic surrounding medium alters the plasmonic properties of a nanoparticle because it provides a mechanism for symmetry breaking of the scattering. Given the success of ion irradiation induced embedment of rigid metallic nanospheroids into amorphous substrate, it is possible to examine the effect of the silica glass substrate on the plasmonic properties of these embedded nanospheroids. In this work presented here, discrete dipole approximation (DDA) calculations for the Au nanospheroids’ optical properties were performed based on 3–dimensional (3D) configuration extracted from planar SEM micrographs and cross–sectional TEM micrographs of the Au nanospheroids partially embedded in the silica glass, and the well–matched simulations with respect to the experimental measurements could demonstrate the dielectric constant at the near surface of silica glass decreased after Ar–ion irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Structural and magnetic properties of FeNi thin films fabricated on amorphous substrates

FeNi films were fabricated by sputtering and rapid thermal annealing on thermally amorphous substrates to realize the formation of an L1{sub 0}-FeNi phase by a simple method. Structural and magnetic properties of FeNi films were investigated by varying the annealing temperature. L1{sub 0}-FeNi superlattice peaks were not observed in X-ray diffraction patterns, indicating no formation of L1{sub 0}-ordered phase, however, the surface structure systematically changed with the annealing temperature. Magnetization curves also revealed a drastic change depending on the annealing temperature, which indicates the close relation between the morphology and magnetic properties of FeNi films fabricated on amorphous substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

A single layer of graphene with dimensions of 20 mm × 20 mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50 nm to 200 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Modifying the chemistry of graphene with substrate selection: A study of gold nanoparticle formation

Graphene and metal nanoparticle composites are a promising class of materials with unique electronic, optical, and chemical properties. In this work, graphene is used as a reducing surface to grow gold nanoparticles out of solution-based metal precursors. The nanoparticle formation is found to strongly depend upon the graphene substrate selection. The studied substrates include diamond, p-type silicon, aluminum oxide, lithium niobate, and copper. Our results indicate that the chemical properties of graphene depend upon this selection. For example, for the same reaction times and concentration, the reduction of gold chloride to gold nanoparticles on graphene/lithium niobate results in 3% nanoparticle coverage compared to 20% coverage on graphene/silicon and 60% on graphene/copper. On insulators, nanoparticles preferentially form on folds and edges. Energy dispersive X-ray analysis is used to confirm the nanoparticle elemental makeup.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Absence of low temperature phase transitions and enhancement of ferroelectric transition temperature in highly strained BaTiO{sub 3} epitaxial films grown on MgO Substrates

Recently, a large enhancement in the ferroelectric transition temperature of several oxides is reported by growing the respective thin films on appropriate substrates. This phenomenon is correlated with high residual strain in thin films often leading to large increase in the tetragonality of their crystal structure. However, such an enhancement of transition temperature is usually limited to very thin films of ∼10 nm thickness. Here, we report growth of fully strained epitaxial thin films of BaTiO{sub 3} of 400 nm thickness, which are coherently grown on MgO substrates by pulsed laser deposition technique. Conventional high resolution x-ray diffraction and also the reciprocal space map measurements confirm that the film is fully strained with in-plane tensile strain of 5.5% that dramatically increases the tetragonality to 1.05. Raman measurements reveal that the tetragonal to cubic structural phase transition is observed at 583 K, which results in an enhancement of ∼200 K. Furthermore, temperature dependent Raman studies on these films corroborate absence of all the low temperature phase transitions. Numerical calculations based on thermodynamical model predict a value of the transition temperature that is greater than 1500 °C. Our experimental results are therefore in clear deviation from the existing strain dependent phase diagrams.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Influence of hydrogen on the structure and stability of ultra-thin ZnO on metal substrates

We investigate the atomic and electronic structure of ultra-thin ZnO films (1 to 4 layers) on the (111) surfaces of Ag, Cu, Pd, Pt, Ni, and Rh by means of density-functional theory. The ZnO monolayer is found to adopt an α-BN structure on the metal substrates with coincidence structures in good agreement with experiment. Thicker ZnO layers change into a wurtzite structure. The films exhibit a strong corrugation, which can be smoothed by hydrogen (H) adsorption. An H over-layer with 50% coverage is formed at chemical potentials that range from low to ultra-high vacuum H{sub 2} pressures. For the Ag substrate, both α-BN and wurtzite ZnO films are accessible in this pressure range, while for Cu, Pd, Pt, Rh, and Ni wurtzite films are favored. The surface structure and the density of states of these H passivated ZnO thin films agree well with those of the bulk ZnO(0001{sup ¯})-2×1-H surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Studies on VO{sub x} thin films deposited over Si{sub 3}N{sub 4} coated Si substrates

Vanadium oxide (VO{sub x}) thin films were deposited on to the silicon nitride (Si{sub 3}N{sub 4}) coated silicon (Si) substrate using reactive direct current magnetron sputtering at different substrate temperatures (T{sub s}). The deposited films were characterized for their structural, morphological, optical and electrical properties. The average grain size of the deposited films was in the range of 95 to 178 nm and the strain varied from 0.071 to 0.054 %. The optical bandgap values of the films were evaluated using UV-Vis spectroscopy and lies in the range of 2.46 to 3.88 eV. The temperature coefficient of resistance (TCR) for the film deposited at 125 °C was -1.23%/°C with the sheet resistivity of 2.7 Ω.cm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Direct evidence of strain transfer for InAs island growth on compliant Si substrates

Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evidences of strain transfer for InAs islands on freestanding Si thin films (7 nm). Synchrotron X-ray diffraction measurements using a beam size of 300 × 700 nm{sup 2} can directly probe the strain status of the compliant substrate underneath deposited islands. Using a recently developed diffraction mapping technique, three-dimensional reciprocal space maps were reconstructed around the Si (004) peak for specific illuminated positions of the sample. The strain retrieved was analyzed using continuous elasticity theory via Finite-element simulations. The comparison of experiment and simulations yields the amount of strain from the InAs islands, which is transferred to the compliant Si thin film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

An experimental investigation on the mechanical properties of the interface between large-sized graphene and a flexible substrate

In this paper, the interfacial mechanical properties of large-sized monolayer graphene attached to a flexible polyethylene terephthalate (PET) substrate are investigated. Using a micro-tensile test and Raman spectroscopy, in situ measurements are taken to obtain the full-field deformation of graphene subjected to a uniaxial tensile loading and unloading cycle. The results of the full-field deformation are subsequently used to identify the status of the interface between the graphene and the substrate as one of perfect adhesion, one showing slide or partial debonding, and one that is fully debonded. The interfacial stress/strain transfer and the evolution of the interface from one status to another during the loading and unloading processes are discussed and the mechanical parameters, such as interfacial strength and interfacial shear strength, are obtained quantitatively demonstrating a relatively weak interface between large-sized graphene and PET.

36 MATERIALS SCIENCE↗
DOE OSTI2015

The atomic details of the interfacial interaction between the bottom electrode of Al/AlO{sub x}/Al Josephson junctions and HF-treated Si substrates

The interface between the Al bottom contact layer and Si substrates in Al based Josephson junctions is believed to have a significant effect on the noise observed in Al based superconducting devices. We have studied the atomic structure of it by transmission electron microscopy. An amorphous layer with a thickness of ∼5 nm was found between the bottom Al electrode and HF-treated Si substrate. It results from intermixing between Al, Si, and O. We also studied the chemical bonding states among the different species using energy loss near edge structure. The observations are of importance for the understanding of the origin of decoherence mechanisms in qubits based on these junctions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗