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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,405 records · Page 78
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Vortex Lattices in Active Nematics with Periodic Obstacle Arrays

Here, we numerically model a two-dimensional active nematic confined by a periodic array of fixed obstacles. Even in the passive nematic, the appearance of topological defects is unavoidable due to planar anchoring by the obstacle surfaces. We show that a vortex lattice state emerges as activity is increased, and that this lattice may be tuned from “ferromagnetic” to “antiferromagnetic” by varying the gap size between obstacles. We map the rich variety of states exhibited by the system as a function of distance between obstacles and activity, including a pinned defect state, motile defects, the vortex lattice, and active turbulence. We demonstrate that the flows in the active turbulent phase can be tuned by the presence of obstacles, and explore the effects of a frustrated lattice geometry on the vortex lattice phase.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Microfluidic electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

Porous, high-surface-area electrode architectures are described that allow structural characterization of interfacial amorphous thin films with high spatial resolution under device-relevant functional electrochemical conditions using high-energy X-ray (>50 keV) scattering and pair distribution function (PDF) analysis. Porous electrodes were fabricated from glass-capillary array membranes coated with conformal transparent conductive oxide layers, consisting of either a 40 nm–50 nm crystalline indium tin oxide or a 100 nm–150 nm-thick amorphous indium zinc oxide deposited by atomic layer deposition. These porous electrodes solve the problem of insufficient interaction volumes for catalyst thin films in two-dimensional working electrode designs and provide sufficiently low scattering backgrounds to enable high-resolution signal collection from interfacial thin-film catalysts. For example, PDF measurements were readily obtained with 0.2 Å spatial resolution for amorphous cobalt oxide films with thicknesses down to 60 nm when deposited on a porous electrode with 40 µm-diameter pores. This level of resolution resolves the cobaltate domain size and structure, the presence of defect sites assigned to the domain edges, and the changes in fine structure upon redox state change that are relevant to quantitative structure–function modeling. The results suggest the opportunity to leverage the porous, electrode architectures for PDF analysis of nanometre-scale surface-supported molecular catalysts. In addition, a compact 3D-printed electrochemical cell in a three-electrode configuration is described which is designed to allow for simultaneous X-ray transmission and electrolyte flow through the porous working electrode.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Temperature Controlled Glass Additive Manufacturing

Glass additive manufacturing (AM) is an emerging technology with a wide range of applications in chemistry, biology, optical science, and engineering. A custom laser-based glass 3D printer was developed by a group of engineers at Los Alamos National Laboratory (LANL) and is being optimized to produce hardware for chemical processing equipment, microfluidic systems, as well as optical elements. AM glass using a filament deposition modeling (FDM) approach allows for generation of parts with high optical quality. The quality of the glass can be affected by the generation of defects such as bubbles and vaporization which affect the optical quality of the glass. The defects can also affect the mechanical performance of the glass and lead to sample cracking.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

The Baseline Performance Reference for Irradiance in PV System Applications

This report proposes the definition of a new baseline performance reference (BPR). The definition goes beyond existing standards pertaining to photovoltaic (PV) reference cells and devices to define the response under all possible operating conditions in the field. Field evaluations using BPR devices will be more sensitive to performance anomalies than pyranometers because they track PV system power output more closely. At the same time, they will be able to detect a broader range of performance anomalies than traditional matched reference devices, which might have matching defects. The BPR definition also opens the door to new practices in resource assessment and yield prediction. Solar resource data can be collected or modeled and validated directly as BPR irradiance, and PV system simulations based on BPR irradiance need fewer assumptions and less processing to obtain the effective irradiance on modules. As a result, lower uncertainty in yield assessments can be expected.

14 SOLAR ENERGY↗
NASA NTRS1978

Theoretical and experimental study of the drag of multielement airfoils

The viscous/potential flow past single-element and multielement airfoils is studied theoretically and experimentally. A computerized analysis, based on iteratively coupled potential-flow and boundary-layer analysis, is used to predict the flow field of the airfoil. The method yields detailed characteristics of conventional laminar and turbulent boundary layers, turbulent wakes, and confluent boundary layers. The viscous flows are analyzed with a method that uses finite-difference solutions of the boundary-layer equations. Reynolds stress in the boundary layers and wakes is simulated with eddy viscosity models for the various flow zones. The viscous calculations are carried into the wake of the airfoil where the drag is found from the defect in the wake momentum.

Olson, L. E.↗
NASA NTRS1984

Track damage and erosion of insulators by ion-induced electronic processes

Track damage and the associated ejection of atoms and molecules from insulators, which occur as a result of ion-induced electronic excitation, are of interest both in their own right and because of the mechanisms through which the energy in the excited electrons is transformed into atomic motion. In this paper an overview is given of the phenomena that are observed. We show that there is a remarkable similarity between the damage profile along the ion's track in the solid and the yield of ejected atoms at the energy that corresponds to each point on the track. It is also seen that the density of extended defects (or, correspondingly, the ejected particle yield) appears to have a 'universal' form that is weakly dependent on the type of material. In the model presented this is a consequence of the inner-shell ionization of light elements in the solid by the incident ion; the resulting Auger decay produces an intense ionization spike that locally triggers the track formation/erosion process. This model allows the estimation of erosion yields/damage profiles for different ions and materials.

Tombrello, T. A.↗
NASA NTRS1985

EL2 and related defects in GaAs - Challenges and pitfalls

The incorporation process of nonequilibrium vacancies in melt-grown GaAs is strongly complicated by deviations from stoichiometry and the presence of two sublattices. Many of the microdefects originating in these vacancies and their interactions introduce energy levels (shallow and deep) within the energy gap. The direct identification of the chemical or structural signature of these defects and its direct correlation to their electronic behavior is not generally possible. It is necessary, therefore, to rely on indirect methods and phenomenological models and deal with the associated pitfalls. EL2, a microdefect introducing a deep donor level, has been in the limelight in recent years because it is believed to be responsible for the semi-insulating behavior of undoped GaAs. Although much progress has been made towards understanding its origin and nature, some relevant questions remain unanswered. An attempt is made to assess the present status of understanding of EL2 in the light of most recent results.

Gatos, H. C.↗
NASA NTRS1985

EL2 and related defects in GaAs - Challenges and pitfalls

The incorporation process of nonequilibrium vacancies in melt-grown GaAs is strongly complicated by deviations from stoichiometry, and the presence of two sublattices. Many of the microdefects originating in these vacancies and their interactions introduce energy levels (shallow and deep) within the energy gap. The direct identification of the chemical or structural signature of these defects and its direct correlation to their electronic behavior is not generally possible. It is therefore necessary to rely on indirect methods and phenomenological models and be confronted with the associated pitfalls. EL2, a microdefect introducing a deep donor level, has been in the limelight in recent years because it is believed to be responsible for the semi-insulating behavior of undoped GaAs. Although much progress has been made towards understanding its origin and nature, some relevant questions remain unanswered. An attempt is made to assess the present status of understanding of EL2 in the light of the most recent results.

Gatos, H. C.↗
NASA NTRS1990

The growth of short cracks in 4340 steel and aluminum-lithium 2090

The objectives were to investigate crack initiation characteristics and short crack growth behavior for Al-Li 2090 and for 4340 steel and to evaluate the ability of a closure-based crack-growth model to predict fatigue crack growth rates and total fatigue lives for the steel. Single-edge-notched tension specimens of each alloy were used to obtain the short crack growth rate information via an acetate replica technique. In addition to constant amplitude loading, tests on the steel were conducted using the Felix/28 variable amplitude spectrum (a shortened form of a standard loading sequence for fixed or semi-rigid helicopter rotors). The short crack growth rates were compared to those for long cracks grown under similar loading conditions. Metallurgical features associated with crack initiation are discussed. For Al-Li 2090 under R = -1 loading, the short cracks grew well below the long crack threshold and grew at acute angles to the loading axis. For 4340 steel under constant amplitude loading at R = 0.5 and 0 and for the Felix/28 spectrum loading, short-crack growth rates agreed well with long-crack growth rates, even near the long-crack threshold. A slight short-crack effect, growth below the long-crack threshold, was observed at R = -1. Fatigue lives were found to depend on the size and type of initiation site, especially for the Felix/28 loading sequence. A semi-empirical crack-growth model incorporating crack-closure effects was used to predict crack growth rates and total fatigue lives of notched 4340 steel specimens. An initial defect size and shape typical of those identified in this steel was assumed for the life predictions. For all loading conditions, reasonable agreement was found between measured and predicted values for both crack growth rates and fatigue lives.

Swain, M. H.↗
NASA NTRS1990

Estimability of geodetic parameters from space VLBI observables

The feasibility of space very long base interferometry (VLBI) observables for geodesy and geodynamics is investigated. A brief review of space VLBI systems from the point of view of potential geodetic application is given. A selected notational convention is used to jointly treat the VLBI observables of different types of baselines within a combined ground/space VLBI network. The basic equations of the space VLBI observables appropriate for convariance analysis are derived and included. The corresponding equations for the ground-to-ground baseline VLBI observables are also given for a comparison. The simplified expression of the mathematical models for both space VLBI observables (time delay and delay rate) include the ground station coordinates, the satellite orbital elements, the earth rotation parameters, the radio source coordinates, and clock parameters. The observation equations with these parameters were examined in order to determine which of them are separable or nonseparable. Singularity problems arising from coordinate system definition and critical configuration are studied. Linear dependencies between partials are analytically derived. The mathematical models for ground-space baseline VLBI observables were tested with simulation data in the frame of some numerical experiments. Singularity due to datum defect is confirmed.

Adam, Jozsef↗
NASA NTRS1993

Quartz dissolution. I - Negative crystal experiments and a rate law. II - Theory of rough and smooth surfaces

The range of the measured quartz dissolution rates, as a function of temperature and pOH, extent of saturation, and ionic strength, is extended to cover a wider range of solution chemistries, using the negative crystal methodology of Gratz et al. (1990) to measure the dissolution rate. A simple rate law describing the quartz dissolution kinetics above the point of zero charge of quartz is derived for ionic strengths above 0.003 m. Measurements were performed on some defective crystals, and the mathematics of step motion was developed for quartz dissolution and was compared with rough-face behavior using two different models.

Gratz, Andrew J.↗
NASA NTRS1995

The control of purity and stoichiometry of compound semiconductors by high vapor pressure transport

In this report we summarize the results of a three year research program on high pressure vapor transport (HPVT) of compound semiconductors. Most of our work focused onto pnictides, in particular ZnGeP2, as a model system. Access to single crystals of well controlled composition of this material is desired for advancing the understanding and control of its point defect chemistry in the contest of remote, real-time sensing of trace impurities, e.g., greenhouse gases, in the atmosphere by ZnGeP2 optical parametric oscillators (OPO's).

Bachmann, Klaus J.↗
NASA NTRS1994

Molecular Dynamics of a Water-Lipid Bilayer Interface

We present results of molecular dynamics simulations of a glycerol 1-monooleate bilayer in water. The total length of analyzed trajectories is 5ns. The calculated width of the bilayer agrees well with the experimentally measured value. The interior of the membrane is in a highly disordered fluid state. Atomic density profile, orientational and conformational distribution functions, and order parameters indicate that disorder increases toward the center of the bilayer. Analysis of out-of-plane thermal fluctuations of the bilayer surfaces occurring at the time scale of the present calculations reveals that the distribution of modes agrees with predictions of the capillary wave model. Fluctuations of both bilayer surfaces are uncorrelated, yielding Gaussian distribution of instantaneous widths of the membrane. Fluctuations of the width produce transient thinning defects in the bilayer which occasionally span almost half of the membrane. The leading mechanism of these fluctuations is the orientational and conformational motion of head groups rather than vertical motion of the whole molecules. Water considerably penetrates the head group region of the bilayer but not its hydrocarbon core. The total net excess dipole moment of the interfacial water points toward the aqueous phase, but the water polarization profile is non-monotonic. Both water and head groups significantly contribute to the surface potential across the interface. The calculated sign of the surface potential is in agreement with that from experimental measurements, but the value is markedly overestimated. The structural and electrical properties of the water-bilayer system are discussed in relation to membrane functions, in particular transport of ions and nonelectrolytes across membranes.

Wilson, Michael A.↗
NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗
NASA NTRSDate not supplied

Quadrupole Simulations of Thermographic Responses of Composites

Thermography has been shown to be a viable technique for inspection of composites. The quadrupole method has been shown as a viable technique for rapidedly simulating the thermal repsonse of layered systems. Often, the effort has focused on a one-dimentional models, in particular for improved analysis of thermal data. For composites, the in-plane heat diffusion often significantly impacts the thermal response of defects of interest, therefore three-dimensional simulations are desirable. This paper discusses the extension of the quadrupole methodology to perform simulations of thermographic responses in three-dimensional configuration. This enables the more realistic simulations of the thermal response of delaminiations in composites. The simulations are compared to finite element simulations of the same inspection configurations. The simulations are also compared to the thermographic measurements on composites where shape and depth of the delaminations are known obtained from other sources.

Thermography↗
NASA NTRSDate not supplied

Simulation of Thermographic Responses of Delaminations in Composites with Quadrupole Method

Thermography has been shown to be a viable technique for inspection of composites. The quadrupole method is a valuable technique for rapidly simulating the thermal response of layered systems. Often, the effort has focused on a one-dimensional model, in particular for improved analysis of thermal data. For composites, the in-plane heat diffusion often significantly impacts the thermal response of defects of interest, therefore three-dimensional simulations are desirable. This paper discusses the extension of the quadrupole methodology to perform simulations of thermographic responses in three-dimensional configurations. This enables the more realistic simulations of the thermal response of delaminations in composites. The simulations are compared to finite element simulations of the same inspection configurations.

Thermography↗
DOE OSTI2022

Dynamic Measurements of the Structural Evolution of Material Defects at the Mesoscale

This is a technical report to be published as part of the FY2021 annual overview package. We have designed experiments and developed analytical methods using images from x-ray and electron microscopy in order to quantify the behavior of crystal dislocation defects at their native nanometer-length and micro-length scales. The results of these analyses are used to directly inform theoretical physics models and guide interpretation of dark field x-ray microscopy (DFXM) images that offer spatial resolution surpassing the resolution of beamline optics. Additionally, we developed new analytical methods to automate the alignment of optics hardware used in both synchrotron and x-ray free electron laser beamline facilities. The tools and workflows developed for this project are now being deployed as proof-of-concept in reaction history analysis (RHA) for future programmatic integration.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Observation of single-defect memristor in an MoS2 atomic sheet

Non-volatile resistive switching, also known as memristor effect, where an electric field switches the resistance states of a two-terminal device, has emerged as an important concept in the development of high-density information storage, computing and reconfigurable systems. The past decade has witnessed substantial advances in non-volatile resistive switching materials such as metal oxides and solid electrolytes. It was long believed that leakage currents would prevent the observation of this phenomenon for nanometre-thin insulating layers. However, the recent discovery of non-volatile resistive switching in two-dimensional monolayers of transition metal dichalcogenide and hexagonal boron nitride sandwich structures (also known as atomristors) has refuted this belief and added a new materials dimension owing to the benefits of size scaling. Here we elucidate the origin of the switching mechanism in atomic sheets using monolayer MoS 2 as a model system. Atomistic imaging and spectroscopy reveal that metal substitution into a sulfur vacancy results in a non-volatile change in the resistance, which is corroborated by computational studies of defect structures and electronic states. These findings provide an atomistic understanding of non-volatile switching and open a new direction in precision defect engineering, down to a single defect, towards achieving the smallest memristor for applications in ultra-dense memory, neuromorphic computing and radio-frequency communication systems.

77 NANOSCIENCE AND NANOTECHNOLOGY↗