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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,423 records · Page 79
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Correlation of the nanostructure with optoelectronic properties during rapid thermal annealing of Ga(NAsP) quantum wells grown on Si(001) substrates

Ga(NAsP) quantum wells grown pseudomorphically on Si substrate are promising candidates for optically active light sources in future optoelectronically integrated circuits on Si substrates. As the material is typically grown at low temperatures, it has to be thermally annealed after growth to remove defects and optimize optoelectronic properties. Here we show by quantitative transmission electron microscopy that two different kinds of structural development are associated with the annealing. First of all, the quantum well homogeneity improves with increasing annealing temperature. For annealing temperatures above 925 °C the composition becomes less homogeneous again. Second, voids form in the quantum well for annealing temperatures above 850 °C. Their density and size increase continuously with increasing annealing temperature. These results are correlated to the optical properties of the samples, where we find from temperature-dependent photoluminescence measurements two scales of disorder, which show the same temperature dependence as the structural properties.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Origins of large light induced voltage in magnetic tunnel junctions grown on semiconductor substrates

Recently, the study of interactions between electron spins and heat currents has given rise to the field of “Spin Caloritronics”. Experimental studies of these interactions have shown a possibility to combine the use of heat and light to power magnetic tunnel junction (MTJ) devices. Here we present a careful study of an MTJ device on Si substrate that can be powered entirely by light. We analyze the influence of the material properties, device geometry, and laser characteristics on the electric response of the sample. We demonstrate that by engineering the MTJ and its electrical contact, a large photovoltage reaching 100 mV can be generated. This voltage originates from the Si substrate and depends on the MTJ magnetic configuration. Finally, we discuss the origin of the photo-voltage in terms of Seebeck and photovoltaic effects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of (111) planes and an apex formed by (137) and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Study of the oxidation effects on isothermal solidification based high temperature stable Pt/In/Au and Pt/In/Ag thick film interconnections on LTCC substrate

The objective of the presented paper is to determine the oxidized phase compositions of indium lead-free solders during solidification at 190 ° C under room environment with the help of X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDX). Many lead-free solders alloys available oxidizes and have poor wetting properties. The oxidation of pure indium solder foil, Au, Pt, and Ag alloys were identified and investigated, in the process of isothermal solidification based solder joints construction at room environment and humidity. Both EDX and XRD characterization techniques were performed to trace out the amount of oxide levels and variety of oxide formations at solder interface respectively. The paper also aims to report the isothermal solidification technique to provide interconnections to pads on Low temperature co-fired ceramic (LTCC) substrate. It also elaborates advantages of isothermal solidification over the other methods of interconnection. Scanning electron microscope (SEM) used to identify the oxidized spots on the surface of Pt, Ag substrates and In solder. The identified oxides were reported.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Mid-infrared intersubband absorption from p-Ge quantum wells grown on Si substrates

Mid-infrared intersubband absorption from p-Ge quantum wells with Si{sub 0.5}Ge{sub 0.5} barriers grown on a Si substrate is demonstrated from 6 to 9 μm wavelength at room temperature and can be tuned by adjusting the quantum well thickness. Fourier transform infra-red transmission and photoluminescence measurements demonstrate clear absorption peaks corresponding to intersubband transitions among confined hole states. The work indicates an approach that will allow quantum well intersubband photodetectors to be realized on Si substrates in the important atmospheric transmission window of 8–13 μm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Preliminary design of betavoltaic battery using Co-60 and Pm-147 with GaAs substrate

Battery is very important for the present daily life, especially for portable devices. The longer utilization time the better performance of battery. Betavoltaic battery is a device that converts energy from beta decays of radioactive nuclide into electric current. One of merits of the later battery is the life time that can be more than ten years without recharging. To develop the betavoltaic battery for energy source of portable devices we have performed a preliminary simulation design of betavoltaic battery using Pm-147 and Co-60 a beta emitter radionuclides with n-GaAs substrate. From the results we found that the combination of Pm-147 with n-GaAs substrate results in 9.0% of efficiency and higher output current compared to references.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Semiconductor- to metallic-like behavior in Bi thin films on KCl substrate

Bi thin films, with a thickness of 100 nm, are deposited by electron-beam evaporation on a freshly cleaved (100) KCl substrate. The substrate temperature during film growth (T{sub dep}) ranges from room temperature up to 170 °C. Films deposited at room temperature exhibit a maze-like microstructure typical of the rhombohedral (110) texture, as confirmed by X-ray diffraction. For T{sub dep} above 80 °C, a different microstructure appears, characterized by concentric triangular shapes corresponding to the trigonal (111) texture. Temperature dependence of the resistivity shows a transition from a semiconductor-like behavior for films deposited at room temperature to a metallic-like behavior for T{sub dep} above 80 °C. From magnetoresistance measurements between room temperature and 1.6 K, we extract the electron and hole mobilities, concentrations, and mean free paths, which allow to draw a complete picture of the transport properties of both types of films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Design and fabrication of non silicon substrate based MEMS energy harvester for arbitrary surface applications

Internet of Things (IoT) uses MEMS sensor nodes and actuators to sense and control objects through Internet. IOT deploys millions of chemical battery driven sensors at different locations which are not reliable many times because of frequent requirement of charging & battery replacement in case of underground laying, placement at harsh environmental conditions, huge count and difference between demand (24 % per year) and availability (energy density growing rate 8% per year). Energy harvester fabricated on silicon wafers have been widely used in manufacturing MEMS structures. These devices require complex fabrication processes, costly chemicals & clean room. In addition to this silicon wafer based devices are not suitable for curved surfaces like pipes, human bodies, organisms, or other arbitrary surface like clothes, structure surfaces which does not have flat and smooth surface always. Therefore, devices based on rigid silicon wafers are not suitable for these applications. Flexible structures are the key solution for this problems. Energy transduction mechanism generates power from free surrounding vibrations or impact. Sensor nodes application has been purposefully selected due to discrete power requirement at low duty cycle. Such nodes require an average power budget in the range of about 0.1 microwatt to 1 mW over a period of 3-5 seconds. Energy harvester is the best alternate source in contrast with battery for sensor node application. Novel design of Energy Harvester based on cheapest flexible non silicon substrate i.e. cellulose acetate substrate have been modeled, simulated and analyzed on COMSOL multiphysics and fabricated using sol-gel spin coating setup. Single cantilever based harvester generates 60-75 mV peak electric potential at 22Hz frequency and approximately 22 µW power at 1K-Ohm load. Cantilever array can be employed for generating higher voltage by replicating this structure. This work covers design, optimization, fabrication of harvester and schottky diodes based voltage multiplier.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Optical and morphological characterizations of pyronin dye-poly (vinyl alcohol) thin films formed on glass substrates

Thin films of pyronin dye mixed with poly(vinyl alcohol) (PVA) on glass substrate were prepared by using spin-coating technique. The optical and morphological properties of the thin films were studied by UV-Vis., steady-state fluorescence spectroscopies and atomic force microscopy (AFM). The thin films on glass substrate were fabricated at various [PVA]/[dye] (P/D) ratios. Hence, the monomeric and H-aggregates thin films of pyronin dye mixed with PVA were formed as a function of the dye and PVA concentration. It was determined that while the monomeric thin films showed strong fluorescence, the formation of H-aggregates in the thin film caused to decreasing the fluorescence intensity. AFM studies demonstrated that the morphology of the thin film was drastically varied with changing the optical property of the thin film such as monomeric and H-aggregates thin films.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Deformation of nanotubes in peeling contact with flat substrate: An in situ electron microscopy nanomechanical study

Peeling of one-dimensional (1D) nanostructures from flat substrates is an essential technique in studying their adhesion properties. The mechanical deformation of the nanostructure in the peeling experiment is critical to the understanding of the peeling process and the interpretation of the peeling measurements, but it is challenging to measure directly and quantitatively at the nanoscale. Here, we investigate the peeling deformation of a bundled carbon nanotube (CNT) fiber by using an in situ scanning electron microscopy nanomechanical peeling technique. A pre-calibrated atomic force microscopy cantilever is utilized as the peeling force sensor, and its back surface acts as the peeling contact substrate. The nanomechanical peeling scheme enables a quantitative characterization of the deformational behaviors of the CNT fiber in both positive and negative peeling configurations with sub-10 nm spatial and sub-nN force resolutions. Nonlinear continuum mechanics models and finite element simulations are employed to interpret the peeling measurements. The measurements and analysis reveal that the structural imperfections in the CNT fiber may have a substantial influence on its peeling deformations and the corresponding peeling forces. The research findings reported in this work are useful to the study of mechanical and adhesion properties of 1D nanostructures by using nanomechanical peeling techniques.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Theoretical study of optical dielectric response of ZnO nanostructure film deposited on silica substrate using Maxwell-Garnett effective medium theory

In the present study the dielectric optical response of various nanostructures of ZnO deposited on silica substrate has been studied using Maxwell-Garnett Effective Medium Theory. Using the volume filling factors for different nanostructures of ZnO the effective dielectric constant has been evaluated. The variation of this effective dielectric constant with the frequency of applied signal has been investigated. Moreover, the reflectance of the film, power absorption and variation of refractive index with frequency has been studied. The results obtained show that the quantum confinement effects in ZnO nano-structural films deposited on silica substrate give rise to distinct optical properties making it an ideal choice for high power THz generation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Structural properties of Bi{sub 2}Te{sub 3} topological insulator thin films grown by molecular beam epitaxy on (111) BaF{sub 2} substrates

Structural properties of topological insulator bismuth telluride films grown epitaxially on (111) BaF{sub 2} with a fixed Bi{sub 2}Te{sub 3} beam flux were systematically investigated as a function of substrate temperature and additional Te flux. A layer-by-layer growth mode is observed since the early stages of epitaxy and remains throughout the whole deposition. Composition of the epitaxial films produced here stays between Bi{sub 2}Te{sub 3} and Bi{sub 4}Te{sub 5}, as determined from the comparison of the measured x-ray diffraction curves with calculations. The substrate temperature region, where the growth rate remains constant, is found to be the most appropriate to obtain ordered Bi{sub 2}Te{sub 3} films. Line width of the L = 18 Bi{sub 2}Te{sub 3} diffraction peaks as low as 140 arcsec was obtained, indicating high crystalline quality. Twinning domains density rises with increasing growth temperature and reducing Te extra flux. X-ray reflectivity curves of pure Bi{sub 2}Te{sub 3} films with thickness from 165 to 8 nm exhibited well defined interference fringes, evidencing homogeneous layers with smooth surface. Our results demonstrate that Bi{sub 2}Te{sub 3} films with very well controlled structural parameters can be obtained. High structural quality Bi{sub 2}Te{sub 3} films as thin as only eight quintuple layers grown here are promising candidates for intrinsic topological insulator.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Topotaxial growth of α-Fe{sub 2}O{sub 3} nanowires on iron substrate

α-Fe{sub 2}O{sub 3} (hematite) nanowires have been grown by simple thermal oxidation of iron foil at 700°C in a moist oxygen flow. It was observed that the growth of nanowires highly depends on the texture of the iron substrate, in particular the presence of [110] oriented iron grains. Cross-sectional Transmission Electron Microscopy (TEM) investigation of as-grown sample revealed that the growth of nanowires has definite orientation relation with the underlying oxide grains Fe{sub 3}O{sub 4} (magnetite) and FeO (wustite), which can be interpreted by the primary orientation relationships of topotaxial growth of iron oxides. The observation can pave the way for patterning of the nanowire growth by controlling the texture of original substrate. Samples were also characterized with Scanning Electron Microscope (SEM) and X-ray diffraction (XRD).

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Preparation of GaN on GaAs (100) substrate by annealing and post-nitridation

Preparation of GaN on GaAs (100) substrate by annealing and post-nitridation process has been studied. X-ray diffraction analysis confirmed the formation β-Ga{sub 2}O{sub 3} phase on annealed substrate. Nitridation of annealed samples resulted in formation hexagonal structure of GaN. Morphological changes of annealed and nitridated samples were analyzed using optical microscopy, scanning electron microscopy, atomic force microscopy. Chemical composition and elemental impurities were analysed by energy dispersive x-ray diffraction. The room-temperature photoluminescence study of annealed samples shows broad emission from 300 nm to 500 nm related to of β-Ga{sub 2}O{sub 3}, whereas nitridated samples show near band edge emission at 370 nm (3.36 eV) which corresponds to GaN.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Nanopatterning of swinging substrates by ion-beam sputtering

Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electrical characteristic of spin coated Fe-Porphyrin on Cu substrates

This paper describes the electrical-characteristics of Fe-Porphyrin thin films on Cu substrates. The thin layer samples used were deposited by spin coating methods on Cu-substrates at room temperature with and without induced magnetic field in the plane direction of the surface films. Fe-porphyrin was dissolved in chloroform and mixed with a magnetic stirrer for 60 min at a rotational speed of 200 rpm. The experimental results show that the mobility carrier charge of the Fe-Porphyrin layer with induced magnetic field during deposition has lower value than that without induced magnetic field case. The decrease of the mobility can be attribute to the change of the surface morphology in Fe-porphyrin films by means of increase in the nano-granular/nano-molecular size caused by the induce magnetic field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large I{sub c}R{sub N} product of 3.8 mV, a sharp quasiparticle current rise with a ΔV{sub g} of 0.4 mV, and a small subgap leakage current. The junction quality factor R{sub sg}/R{sub N} was about 23 for the junction with a J{sub c} of 47 A/cm{sup 2} and was about 6 for the junction with a J{sub c} of 3.0 kA/cm{sup 2}. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Topotaxial growth of α-Fe{sub 2}O{sub 3} nanowires on iron substrate in thermal annealing method

A detail cross-sectional transmission electron microscopy of as-grown α-Fe{sub 2}O{sub 3} nanowire sample, synthesized on iron substrate by thermal annealing method, was carried out to understand the mechanism of growth in this system. Iron undergoes sequential oxidation to form a layered structure of Fe/FeO/Fe{sub 3}O{sub 4}/α-Fe{sub 2}O{sub 3}. α-Fe{sub 2}O{sub 3} nanowires grow on to the top of α-Fe{sub 2}O{sub 3} layer. It was found that subsequent oxide layers grow topotaxially on the grains of iron, which results in a direct orientation relationship between the α-Fe{sub 2}O{sub 3} nanowire and the parent grain of iron. The results also showed that the grains of α-Fe{sub 2}O{sub 3} layer, which were uniquely oriented in [110] direction, undergo highly anisotropic growth to form the nanowire. This anisotropic growth occurs at a twin interface, given by (−11−1), in the α-Fe{sub 2}O{sub 3} layer. It was concluded that the growth at twin interface could be the main driving factor for such anisotropic growth. These observations are not only helpful in understanding the growth mechanism of α-Fe{sub 2}O{sub 3} nanowires, but it also demonstrates a way of patterning the nanowires by controlling the texture of iron substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗