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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

The stress corrosion resistance and the cryogenic temperature mechanical properties of annealed Nitronic 60 bar material

Ambient and cryogenic temperature mechanical properties and the ambient temperature stress corrosion properties of annealed, straightened, and centerless ground Nitronic 60 stainless steel alloy bar material are presented. The mechanical properties of longitudinal specimens were evaluated at test temperatures from ambient to liquid hydrogen. The tensile test data indicated increasing strength with decreasing temperature to -196 C. Below liquid nitrogen temperature the smooth tensile and notched tensile strengths decreased slightly while the elongation and reduction of area decreased drastically. The Charpy V-notched impact energy decreased steadily with decreasing test temperature. Stress corrosion tests were performed on longitudinal tensile specimens and transverse C-ring specimens exposed to: alternate immersion in a 3.5% NaCl bath; humidity cabinet; and a 5% salt spray atmosphere. The longitudinal tensile specimens experienced no corrosive attack. Approximately 3/4 of the transverse C-rings exposed to alternate immersion and to salt spray experienced a pitting attack on the top and bottom ends. Additional stress corrosion tests were performed on transverse tensile specimens. No failures occurred in the 90% stressed specimens exposed for 90 days in the alternate immersion and salt spray environments

Montano, J. W. L.↗
NASA NTRS1986

Physical aging in epoxy matrices and composites

Postcured specimens of Thornell 300 carbon-fiber/Fiberite 934 epoxy as well as Fiberite 934 epoxy resin were quenched from above the glass transition temperature and annealed at 140, 110, or 80 C for times up to 100,000 min. No weight gain or loss was observed during annealing at these temperatures, but significant time-dependent variations were observed in density, modulus, hardness, damping, moisture absorption ability, and thermal expansion characteristics. The relations between the excess thermodynamic properties of epoxy glasses and their time-dependent behavior are discussed. The discussion is illustrated by results obtained by differential scanning calorimetry, dynamic mechanical analysis, tensile testing, solid state nuclear magnetic resonance spectroscopy, and small-angle X-ray scattering.

Kong, Eric Siu-Wai↗
NASA NTRS1998

Buried Oxide Densification for Low Power, Low Voltage CMOS Applications

Special technology and circuit architecture are of growing interest for implementation of circuits which operate at low supply voltages and consume low power levels without sacrificing performance[1]. Use of thin buried oxide SOI substrates is a primary approach to simultaneously achieve these goals. A significant aspect regarding SIMOX SOI for low voltage, low power applications is the reliability and performance of the thin buried oxide. In addition, when subjected to high total dose irradiation, the silicon islands within the BOX layer of SIMOX can store charges and significantly effect the back channel threshold voltages of devices. Thus, elimination of the islands within the buried oxide (BOX) layer is preferred in order to prevent leakage through these conductive islands and charge build-up within the buried oxide layer. A differential (2-step) ramp rate as applied to full and 100 nm BOX SIMOX was previously reported to play a significant role in the stoichiometry and island formation within the buried layer[2]. This paper focus is on the properties of a thin (120nm) buried oxide as a function of the anneal ramp rate and the temperature of anneal. In this research, we have found an improvement in the buried oxide stoichiometry with the use of a slower, singular ramp rate for specified thin buried oxides, with slower ramp rates and higher temperatures of anneal suggested for reducing the presence of Si islands within the BOX layer.

Allen, L. P.↗
NASA NTRS1991

Proton-induced radiation damage in germanium detectors

High-purity germanium (HPGe) detectors will be used in future space missions for gamma-ray measurements and will be subject to interactions with energetic particles. To simulate this process, several large-volume n-type HPGe detectors were incrementally exposed to a particle fluence of up to 10 to the 8th protons/sq cm (proton energy: 1.5 GeV) at different operating temperatures (90 to 120 K) to induce radiation damage. Basic scientific and engineering data on detector performance were collected. During the incremental irradiation, the peak shape produced by the detectors showed a significant change from a Gaussian shape to a broad complex structure. After the irradiation, all detectors were thoroughly characterized by measuring many parameters. To remove the accumulated radiation damage, the detectors were stepwise-annealed at temperatures below 110 C, while kept in their specially designed cryostats. This study shows that n-type HPGe detectors can be used in charged-particle environments as high-energy resolution devices until a certain level of radiation damage is accumulated and that the damage can be removed at moderate annealing temperatures and the detector returned to operating condition.

Brueckner, J.↗
NASA NTRS1990

Characterization of LaRC-TPI 1500 powders - A new version with controlled molecular weight

The crystallization behavior and the melt flow properties of two batches of 1500 series LaRC-TPI polymers have been investigated. The characterization methods include DSC, XRD, and melt rheology. The as-received materials posses initial crystalline melting peak temperatures of 295 and 305 C, respectively. These materials are less readily recrystallizable at elevated temperatures when compared to other semicrystalline thermoplastics. For the samples annealed at temperatures below 330 C, a semicrystalline polymer can be obtained. On the other hand, a purely amorphous structure is realized in samples annealed at temperatures above 330 C. The viscoelastic properties at elevated temperatures below and above T(g)s of the polymers were measured. Information with regard to the molecule sizes and distributions in these polymers were also extracted from melt rheology.

Hou, T. H.↗
NASA NTRS1990

LaRC TPI 1500 series polymers

The crystallization behavior and the melt flow properties of two batches of 1500 series LaRC-TPI polymers from Mitsui Toatsu Chemicals (MTC) were investigated. The characterization methods include Differential Scanning Calorimetry, the x ray diffractography and the melt rheology. The as-received materials possess initial crystalline melting peak temperatures of 295 and 305 C, respectively. These materials are less readily recrystallizable at elevated temperatures when compared to other semicrystalline thermoplastics. For the samples annealed at temperatures below 330 C, a semicrystalline polymer can be obtained. On the other hand, a purely amorphous structure is realized in the samples annealed at temperatures above 330 C. Isothermal crystallization kinetics were studied by means of the simple Avrami equation. The viscoelastic properties at elevated temperatures below and above glass transition temperature of the polymers were measured. Information with regard to the molecule sizes and distributions in these polymers were also extracted from melt rheology.

Hou, Tan-Hung↗
NASA NTRS1979

Effect of dopants on annealing performance of silicon solar cells

The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.

Scott-Monck, J. A.↗
NASA NTRS1981

Sub-T/g/ annealing studies of advanced epoxy-matrix graphite-fiber-reinforced composites

Annealing at temperatures below the glass transition temperature (sub-T/g/ annealing) in structural epoxy network glasses is found to affect long-term mechanical properties of symmetrically (+ or - 45 deg) reinforced 16-lamina graphite/epoxy composites. Post-cured specimens of Thornel 300 graphite/Narmco 5208 epoxy are sub-T(g) annealed at 140 C for about 10, 100, 1000, 10,000, and 100,000 min with a prior quenching above T(g). The ultimate tensile strength, strain-to-break, and static toughness of the composite materials are found to decrease as a function of sub-T(g) annealing time, while no weight loss is observed. Time-dependent changes in properties are explained by a physical aging concept based on free-volume decreases in the nonequilibrium glassy state of network epoxies, and results imply that changes in composite properties may occur with the service time.

Kong, E. S. W.↗
NASA NTRS1989

Glass-derived superconducting ceramics with zero resistance at 107 K in the Bi(1.5)Pb(0.5)Sr2Ca2Cu3O(x) system

A melt of composition Bi(1.5)Pb(0.5)Sr2Ca2Cu3O(x) was fast quenched to form a glass. This was subsequently air annealed and the influence of annealing time and temperature on the formation of various crystalline phases was investigated. X-ray powder diffraction indicate that none of the resulting samples were single phase. However, for an annealing temperature of 840 C, the volume fraction of the high Tc phase (isostructural with Bi2Sr2Ca2Cu3O10) increased with annealing time. A specimen annealed at this temperature for 243 h followed by slow cooling showed a sharp transition and Tc (R = 0) = 107.2 K.

Bansal, Narottam P.↗
NASA NTRS1974

GaAs transistors formed by Be or Mg ion implantation

N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures.

Hunsperger, R. G.↗
NASA NTRS1982

New implantation techniques for improved solar cell junctions

Ion implantation techniques offering improved cell performance and reduced cost have been studied. These techniques include non-mass-analyzed phosphorus implantation, argon implantation gettering, and low temperature boron annealing. It is found that cells produced by non-mass-analyzed implantation perform as well as mass-analyzed controls, and that the cell performance is largely independent of process parameters. A study of argon implantation gettering shows no improvement over non-gettered controls. Results of low temperature boron annealing experiments are presented.

Spitzer, M. B.↗
NASA NTRS1986

Ultrasonic determination of recrystallization

Ultrasonic attenuation was measured for cold worked Nickel 200 samples annealed at increasing temperatures. Localized dislocation density variations, crystalline order and colume percent of recrystallized phase were determined over the anneal temperature range using transmission electron microscopy, X-ray diffraction, and metallurgy. The exponent of the frequency dependence of the attenuation was found to be a key variable relating ultrasonic attenuation to the thermal kinetics of the recrystallization process. Identification of this key variable allows for the ultrasonic determination of onset, degree, and completion of recrystallization.

Generazio, E. R.↗
NASA NTRS1988

Ultrasonic attenuation measurements determine onset, degree, and completion of recrystallization

Ultrasonic attenuation was measured for cold worked Nickel 200 samples annealed at increasing temperatures. Localized dislocation density variations, crystalline order and volume percent of recrystallized phase were determined over the anneal temperature range using transmission electron microscopy, X-ray diffraction, and metallurgy. The exponent of the frequency dependence of the attenuation was found to be a key variable relating ultrasonic attenuation to the thermal kinetics of the recrystallization process. Identification of this key variable allows for the ultrasonic determination of onset, degree, and completion of recrystallization.

Generazio, E. R.↗
NASA NTRS1973

High voltage electron microscopy of lunar samples

Lunar pyroxenes from Apollo 11, 12, 14, and 15 were investigated. The iron-rich and magnesium-rich pyroxene specimens were crushed to a grain size of ca. 50 microns and studied by a combination of X-ray and electron diffraction, electron microscopy, 57 Fe Mossbauer spectroscopy and X-ray crystallography techniques. Highly ordered, uniform electron-dense bands, corresponding to exsolution lamellae, with average widths of ca. 230A to 1000A dependent on the source specimen were observed. These were?qr separated by wider, less-dense interband spacings with average widths of ca. 330A to 3100A. In heating experiments, splitting of the dense bands into finer structures, leading finally to obliteration of the exsolution lamellae was recorded. The extensive exsolution is evidence for significantly slower cooling rates, or possibly annealing, at temperatures in the subsolidus range, adding evidence that annealing of rock from the surface of the moon took place at ca. 600 C. Correlation of the band structure with magnetic ordering at low temperatures and iron clustering within the bands was studied.

Fernandez-Moran, H.↗
NASA NTRS2000

The Formation Age of Comets: Predicted Physical and Chemical Trends

Dust grains in Herbig Ae/Be stars are continuously replenished by infalling comets. The IR spectra of these cometary grains appear to evolve temporally from initially amorphous astronomical silicates in young protostars to crystalline olivine in much older sources. Crystalline olivine can only be produced from amorphous silicates on a time scale of months-to-years via thermal annealing at temperatures near 1000 K. Since such sustained high temperatures only occur near the central star, dust annealed at 1000 K in inner nebular regions must be continuously transported beyond the nebular snowline to be incorporated into the next generation of cometesimals. The average formation age of a comet can therefore be measured as a ratio of the annealed crystalline olivine dust component to the total dust content of the comet. Comets formed from nearly pristine interstellar materials early in the protostellar nebula stage will contain very little crystalline dust whereas comets formed towards the end of the accretion period will incorporate a much higher percentage of annealed silicate. It is unlikely that only dust grains circulate from the inner to the outer nebula; the gas associated with such dust should also find its way beyond the snowline. Since this gas and dust will have equilibrated in the higher pressure-temperature regime of the inner nebula, it will contain a much higher proportion of hydrocarbons and ammonia than more pristine interstellar ices. Therefore, in addition to a higher fraction of crystalline dust, later forming comets should also contain higher ratios of hydrocarbons to CO and ammonia to N2 than do those formed early in the history of the nebula.

Nuth, Joseph A., III↗
NASA NTRS1993

Catalytic crystallization of ices by small silicate smokes at temperatures less than 20K

Samples of methanol and water ices condensed from the vapor onto aluminum substrates at low temperatures (below approximately 80 K) form amorphous ices; annealing at temperatures in excess of 140-155 K is usually required to convert such amorphous samples to crystalline ices. However, we have found that when either methanol or water vapor is deposited on to aluminum substrates that have been coated with a thin (0.1-0.5 mm) layer of amorphous silicate smoke, the ices condense in crystalline form. We believe that crystalline ice forms as the result of energy liberated at the ice/silicate interface perhaps due to weak bonding of the ice at defect sites on the grains and the very high surface to volume ratio and defect density of these smokes. Annealing of amorphous water ice mixed with more volatile components such as methane, carbon monoxide, etc., has been suggested as an efficient way to produce clatherates in the outer solar nebula and thus explain the volatile content of comets and icy satellites of the outer planets. This hypothesis may need to be re-examined if amorphous ice does not form on cold silicate grains.

Moore, M.↗
NASA NTRS1981

Thermal stability of GaAs heteroface solar cells with differing contact materials

GaAlAs/GaAs heteroface solar cells used in space offer advantages of higher operating temperatures and recovery from radiation damage using thermal annealing. Elevated temperature experiments were conducted to evaluate the electrical stability of cells with different contact materials. These experiments indicate that for operation of GaAs heteroface solar cells at elevated temperatures, front contact metals must be carefully chosen. The short circuit current varied by only about 3% for cells with Pd/Ag contacts that were heated to 240 C for a total of 500 hours. However, a total decrease in the open circuit voltage of about 20% was observed for these cells. After heating cells to 400 C, large changes in open circuit voltage were observed for cells with Pd/Ag, Pd/Au, Pd, Ag, and Ti contacts; however, preliminary results indicate more stable open circuit voltages for cells with Au, Cr, Zn, and Cr/Au contacts.

Friesen, W. J.↗
NASA NTRS1951

Resolution of annealing experiments for the study of nonequilibrium states

The two techniques for conducting annealing experiments for the purpose of determining the distribution of atoms of a solid among non equilibrium states are considered. Related definitions for resolving power for annealing with steadily rising temperature and for annealing at a series of fixed temperatures are given. The necessary separation of activation energies for the resolution of two different non equilibrium states is found to be greater in the case of a steadily rising temperature, but of the order of 10 percent of the activation energy for both techniques. The resolving power in the case of a steadily rising temperature is independent of the rate of temperature rise.

SOLIDS↗