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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

High-$Q_0$ treatment of CEBAF 1.5 GHz SRF cavities

The Continuous Electron Beam Accelerator Facility (CEBAF) was the first large-scale accelerator to employ superconducting radiofrequency (SRF) cavities for continuous-wave operation. Ongoing research and development efforts continue to focus on increasing the intrinsic quality factor (Q 0 ) of these cavities in order to reduce cryogenic losses while maintaining operational gradients. Here, in this work, we report on the application of high-Q 0 surface treatments to single-cell and multicell C100 and C75 style 1.5 GHz niobium cavities used in the CEBAF accelerator. Nitrogen infusion and oxygen alloying via medium-temperature baking were applied under heat-treatment constraints relevant to existing cavity hardware. Both processes yielded substantial improvements in Q 0 at moderate accelerating gradients, achieving values of approximately 2 × 10 10 at 2.07 K and 20 MV/m. The effectiveness of nitrogen infusion at reduced annealing temperatures and the successful extension of oxygen alloying to multicell cavities are demonstrated. These results establish viable pathways for implementing high-Q 0 treatments in CEBAF-compatible cavities and support future integration into cryomodules for reduced operational cryogenic load.

Dhakal, Pashupati [Thomas Jefferson National Accel↗
DOE OSTI2021

Chalcogenide perovskite BaZrS 3 thin-film electronic and optoelectronic devices by low temperature processing

Owing to its superior visible light absorption and high chemical stability, chalcogenide perovskite barium zirconium sulfide (BaZrS 3 ) has attracted significant attention in the past few years as a potential alternative to hybrid halide perovskites for optoelectronics. However, the high processing temperatures of BaZrS 3 thin films at above 1000 °C severely limits their potential for device applications. Herein, we report the synthesis of BaZrS 3 thin films at temperatures as low as 500 °C, by changing the chemical reaction pathway. The single phase BaZrS 3 thin film was confirmed by X-ray diffraction and Raman spectroscopy. Atomic force microscopy and scanning electron microscopy show that crystalline size and surface roughness were consistently reduced with decreasing annealing temperature. The lower temperatures further eliminate sulfur vacancies and carbon contaminations associated with high temperature processing. The ability to synthesize chalcogenide perovskite thin films at lower temperatures removes a major hurdle for their device fabrication. The photodetectors demonstrate fast response and an on/off ratio of 80. Finally, the fabricated field effect transistors show an ambipolar behavior with electron and hole mobilities of 16.8 cm 2 /Vs and 2.6 cm 2 /Vs, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Property Measurements of the NaCl-PuCl 3 Molten Salt System

Thermal properties of several compositions of the binary NaCl-PuCl 3 salt were measured to confirm the eutectic composition and provide high quality data for use by MSR developers. The PuCl 3 was generated by reducing PuO 2 to plutonium metal in the presence of calcium metal and then chlorinating the metallic plutonium with NH 4 Cl. The resulting PuCl 3 was used to make seven binary NaCl-PuCl 3 compositions with between 59.9 mol % PuCl 3 (Salt 1) and 20.0 mol % PuCl 3 (Salt 7). The eutectic temperature was measured to be 457 ± 4 °C by onset determination in DSC analyses of the seven mixtures, which is consistent with the values in the literature. Additional transitions were observed at approximately 332 and 363 °C in analyses of the PuCl 3 -rich compositions (Salts 1-3) at about 376 and 439 °C in analyses the Na-rich compositions (Salts 4-7). The solid state heat capacity decreased with increasing PuCl 3 content. The liquid state heat capacity was measured for Salt 3 (37.4 mol % PuCl 3 ) and Salt 4 (38.3 mol % PuCl 3 ). A higher heat capacity was measured for Salt 4 and measurements with both salts showed a positive correlation with temperature between 520 and 730 °C. Cells fabricated from nickel and molybdenum for use in DSC measurements at high temperatures could not be adequately sealed because these materials are not sufficiently malleable, even after high temperature annealing. It is recommended that future development focus on corrosion-resistant materials that have mechanical and thermal properties similar to the commercially available gold cells, such as Pt-Rh (80–20) and pure platinum. Those materials are chemically inert, soft, and malleable like gold, but have melting temperatures higher than 1000 °C (Rakhtsaum, 2013). Use of the Pt-Rh alloy should be evaluated first based on superior machinability for making precision parts and its current use in commercial DSC high temperature crucibles. The commercial Pt-Rh cells are not hermetically sealable, but it is expected that cells made from thinner stock can be sealed.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2023

Aggregation of Size-Selected Oxide Clusters Deposited onto Au(111)

Kinetic Monte Carlo (kMC) simulations along with density functional theory (DFT) calculations were used to investigate the aggregation of size-selected Nb 3 O y (y = 5, 6, 7) clusters deposited onto the Au(111) surface. Recent STM experiments showed that the cluster binding sites and sizes of the cluster assemblies on the Nb 3 O y /Au(111) surfaces strongly depend on the stoichiometry of the clusters, i.e., the oxygen-to-niobium ratio. To better understand the origins of these differences, kMC simulations of the nucleation and growth of cluster assemblies were performed using energy barriers for diffusion and intercluster interactions estimated from DFT calculations of cluster binding and dimerization energies, respectively. Comparisons of the kMC simulations with STM images of the as-deposited Nb 3 O y /Au(111) surfaces at RT and after high temperature annealing were used to further optimize the energetics and gauge the importance of nearest neighbor interactions. The kMC simulations demonstrate that the assembly of Nb 3 O y clusters on Au(111) are largely controlled by the magnitude of the barriers for diffusion and interparticle-bond formation, while changes at higher temperatures are sensitive to the binding energies between nearest neighbors. Simulations for the Nb 3 O 5 and Nb 3 O 6 clusters, which exhibit smaller cluster assembly sizes in STM, required larger diffusion barriers as well as different barriers for interparticle binding, which reflected differences in DFT calculated dimerization energies. Furthermore, the results demonstrate the effectiveness of combined DFT and kMC calculations for understanding how the stoichiometry affects the aggregation of small oxide clusters on a metal surface.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Nanoscale Photoexcited Carrier Dynamics in Perovskites

The optoelectronic properties of lead halide perovskite thin films can be tuned through compositional variations and strain, but the associated nanocrystalline structure makes it difficult to untangle the link between composition, processing conditions, and ultimately material properties and degradation. Here, we study the effect of processing conditions and degradation on the local photoconductivity dynamics in [(CsPbI 3 ) 0.05 (FAPbI 3 ) 0.85 (MAPbBr 3 ) 0.15 ] and (FA 0.7 Cs 0.3 PbI 3 ) perovskite thin films using temporally and spectrally resolved microwave near-field microscopy with a temporal resolution as high as 5 ns and a spatial resolution better than 50 nm. For the latter FACs formulation, we find a clear effect of the process annealing temperature on film morphology, stability, and spatial photoconductivity distribution. After exposure of samples to ambient conditions and illumination, we find spectral evidence of halide segregation-induced degradation below the instrument resolution limit for the mixed halide formulation, while we find a clear spatially inhomogeneous increase in the carrier lifetime for the FACs formulation annealed at 180 degrees C.

14 SOLAR ENERGY↗
DOE OSTI2020

Ultrathin silicon oxide prepared by in-line plasma-assisted N 2 O oxidation (PANO) and the application for n-type polysilicon passivated contact

We develop a plasma-assisted nitrous-oxide (N 2 O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiO x ) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiO x into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiO x on the n-type c-Si wafer is achieved by 880 °C annealing, which shows competitive passivation quality to the one with NASO SiO x . Champion implied open-circuit voltage (iV oc ) and single-sided recombination saturated current (J 0 ) reach 730 mV and 4.3 fA/cm 2 after crystallization; and they are further improved to 747 mV and 2.0 fA/cm 2 (3 × 10 15 cm -3 ) after subsequent AlO x /SiN x hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiO x ranges 1.1–2.4 nm and the controlled nitric acid oxidized SiO x (NAOS) ranges 1.3–1.8 nm. The contact resistivity (ρ c ) is typically <10 mΩ cm 2 with the annealing temperature of >820 °C. Also, the crystallinity, phosphorous in-diffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiO x and in-situ doping amorphous silicon precursor can be fabricated in one PECVD system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.

14 SOLAR ENERGY↗
DOE OSTI2020

Sequential Doping of Ladder-Type Conjugated Polymers for Thermally Stable n-Type Organic Conductors

Doping of organic semiconductors is a powerful tool to optimize the performance of various organic (opto)electronic and bioelectronic devices. Despite recent advances, the low thermal stability of the electronic properties of doped polymers still represents a significant obstacle to implementing these materials into practical applications. Hence, the development of conducting doped polymers with excellent long-term stability at elevated temperatures is highly desirable. Here, we report on the sequential doping of the ladder-type polymer poly(benzimidazobenzophenanthroline) (BBL) with a benzimidazole-based dopant (i.e., N-DMBI). By combining electrical, UV–vis/infrared, X-ray diffraction, and electron paramagnetic resonance measurements, we quantitatively characterized the conductivity, Seebeck coefficient, spin density, and microstructure of the sequentially doped polymer films as a function of the thermal annealing temperature. Importantly, we observed that the electrical conductivity of N-DMBI-doped BBL remains unchanged even after 20 h of heating at 190 °C. This finding is remarkable and of particular interest for organic thermoelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High-surface-area corundum nanoparticles by resistive hotspot-induced phase transformation

Abstract High-surface-area α-Al 2 O 3 nanoparticles are used in high-strength ceramics and stable catalyst supports. The production of α-Al 2 O 3 by phase transformation from γ-Al 2 O 3 is hampered by a high activation energy barrier, which usually requires extended high-temperature annealing (~1500 K, > 10 h) and suffers from aggregation. Here, we report the synthesis of dehydrated α-Al 2 O 3 nanoparticles (phase purity ~100%, particle size ~23 nm, surface area ~65 m 2 g −1 ) by a pulsed direct current Joule heating of γ-Al 2 O 3 . The phase transformation is completed at a reduced bulk temperature and duration (~573 K, < 1 s) via an intermediate δʹ-Al 2 O 3 phase. Numerical simulations reveal the resistive hotspot-induced local heating in the pulsed current process enables the rapid transformation. Theoretical calculations show the topotactic transition (from γ- to δʹ- to α-Al 2 O 3 ) is driven by their surface energy differences. The α-Al 2 O 3 nanoparticles are sintered to nanograined ceramics with hardness superior to commercial alumina and approaching that of sapphire.

Deng, Bing (ORCID:0000000305308410)↗
DOE OSTI2020

In situ and ex situ studies of anomalous eutectic formation in undercooled Ni–Sn alloys

Anomalous eutectic formation in undercooled Ni-Sn alloys was investigated by in situ X-ray diffraction and ex situ remelting and annealing experiments. Dynamic recrystallization and partial remelting of primary solids followed by repeated nucleation and growth of eutectic grains in the mushy zone were revealed by time-resolved X-ray diffraction. Ex situ experiments demonstrated that partial remelting of near-equilibrium solidified alloys of eutectic or near-eutectic composition can convert regular lamellar eutectic into anomalous eutectic, whereas high-temperature annealing of splat-quenched alloys of similar composition can convert eutectic or two-phase dendrites into anomalous eutectic. It is concluded that compared to ripening in solid-states, partial remelting of eutectic or two-phase dendrites in a mushy zone provides a more realistic mechanism for anomalous eutectic formation in undercooled solidification of Ni-Sn eutectic alloys. (C) 2020 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Crystal growth↗
DOE OSTI2020

Materials and technological processes for High-Gradient accelerating structures: new results from mechanical tests of an innovative braze-free cavity.

Pure oxygen-free high-conductivity copper is a widely used material for manufacturing accelerating cavities working at room temperature. Several studies attempted to explain limitations associated with the maximum allowed field gradients and the behaviour of vacuum RF breakdown in copper accelerating structures through generation and movement of dislocations under stresses associated with RF electric and magnetic fields. Pure copper and also copper alloys undergo mechanical and thermal treatments to be hardened and strengthened during manufacturing, although their mechanical properties significantly change after heating above 590°C. High temperature brazing and diffusion bonding are assembly methods widely used to manufacture ultra-high vacuum accelerating devices. However, these processes, occurring at about 800–1000°C, significantly affect the mechanical properties of copper and copper alloys. We introduce here a novel Tungsten Inert Gas welding procedure, which is fast and keeps the high-gradient surfaces of the cavity and other components well below the copper annealing temperature. This process may be successfully used to manufacture copper-based accelerating components. This technology further preserves the hardness and cleanliness of copper in order to achieve the maximum accelerating gradient.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Synthesis of Nano-Oxide Precipitates by Implantation of Ti, Y and O Ions in Fe-10%Cr: Towards an Understanding of Precipitation in Oxide Dispersion-Strengthened (ODS) Steels

The properties of oxide dispersion-strengthened steels are highly dependent on the nature and size distribution of their constituting nano-oxide precipitates. A fine control of the processes of synthesis would enable the optimization of pertinent properties for use in various energy systems. This control, however, requires knowledge of the precise mechanisms of nucleation and growth of the nanoprecipitates, which are still a matter of debate. In the present study, nano-oxide precipitates were produced via the implantation of Y, Ti, and O ions in two different sequential orders in an Fe-10%Cr matrix that was subsequently thermally annealed. The results show that the oxides that precipitate are not necessarily favoured thermodynamically, but rather result from complex kinetics aspects related to the interaction between the implanted elements and induced defects. When Y is implanted first, the formation of nanoprecipitates with characteristics similar to those in conventionally produced ODS steels, especially with a core/shell structure, is evidenced. In contrast, when implantation starts with Ti, the precipitation of yttria during subsequent high-temperature annealing is totally suppressed, and corundum Cr 2 O 3 precipitates instead. Moreover, the systematic involvement of {110} matrix planes in orientation relationships with the precipitates, independently of the precipitate nature, suggests matrix restriction effects on the early stages of precipitation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Structural evolution and magnetic hardness of (Sm,Zr)(Fe,Co,Ti) 12 alloy particles via reduction-diffusion

The quest for achieving high coercivity in Sm(Fe,Co,Ti) 12 alloys, despite their inherent strong magnetocrystalline anisotropy, has posed significant challenges. Recently, (Sm,Zr)(Fe,Co,Ti) 12 monocrystalline particles have exhibited coercivity μ 0 H c > 1.2 T, showcasing promising prospects and significant potential for both manufacturing and research endeavors. This study delves into the structural evolution of (Sm,Zr)(Fe,Co,Ti) 12 (1:12) alloy particles made via the calciothermic reduction-diffusion synthesis process as influenced by the molar ratios of Ca atoms to O 2- ions (Ca/O), annealing time and annealing temperature. Critical insight that informs conditions to optimize the magnetic response is gained via systematic experimentation and advanced electron microscopy. Complex structural features, including core-shell morphologies and intricate multiphase compositions within individual particles, are unveiled. An optimal Ca/O ratio of 1.30 produces particles with a coercivity up to μ 0 H c = 1.63 T, while higher Ca/O ratios induce the formation of a Sm-rich TbCu 7 -type (1: 7 ) phase, which only partially transforms into the desired 1:12 phase during annealing. Persistent remnants of the 1:7 phase locally impact atomic structure, particle morphology, and coercivity. Furthermore, these findings underscore the complex interplay between synthesis parameters, resulting structures, and magnetic properties, informing the design and optimization of high-performance permanent magnets comprised of the (1:12) compound.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

The study investigates the mitigation of radiation damage on p‐type SnO thin‐film transistors (TFTs) with a fast, room‐temperature annealing process. Atomic layer deposition is utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au 4+ irradiation at a fluence level of 5.2 × 10 12 ions cm −2 , the output drain current and on/off current ratio ( I on / I off ) decrease by more than one order of magnitude, field‐effect mobility ( μ FE ) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high‐resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low‐duty‐cycle high‐density pulsed current. At a pulsed current density of 4.0 × 10 5 A cm −2 , approximately four times increase in I on / I off is observed, 41% increase in μ FE , and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique.

Al-Mamun, Nahid Sultan↗
DOE OSTI2021

Atomic Structure Evolution of Pt–Co Binary Catalysts: Single Metal Sites versus Intermetallic Nanocrystals

Due to their exceptional catalytic properties for the oxygen reduction reaction (ORR) and other crucial electrochemical reactions, PtCo intermetallic nanoparticle (NP) and single atomic (SA) Pt metal site catalysts have received considerable attention. However, their formation mechanisms at the atomic level during high-temperature annealing processes remain elusive. Furthermore, the thermally driven structure evolution of Pt–Co binary catalyst systems is investigated using advanced in situ electron microscopy, including PtCo intermetallic alloys and single Pt/Co metal sites. The pre-doping of CoN 4 sites in carbon supports and the initial Pt NP sizes play essential roles in forming either Pt 3 Co intermetallics or single Pt/Co metal sites. Importantly, the initial Pt NP loadings against the carbon support are critical to whether alloying to L1 2 -ordered Pt 3 Co NPs or atomizing to SA Pt sites at high temperatures. High Pt NP loadings (e.g., 20%) tend to lead to the formation of highly ordered Pt 3 Co intermetallic NPs with excellent activity and enhanced stability toward the ORR. In contrast, at a relatively low Pt loading (<6 wt%), the formation of single Pt sites in the form of PtC 3 N is thermodynamically favorable, in which a synergy between the PtC 3 N and the CoN 4 sites could enhance the catalytic activity for the ORR, but showing insufficient stability.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Thermal stability of dopants in boron carbide

Undoped (B 4 C), B rich (B 5.5 C), and B/Si co-doped (Si-B 6.5 C) boron carbides were annealed at 500 °C for up to 21 days to investigate the thermal stability of primary dopants, B and Si. Structural changes associated with dedoping were investigated by X-ray diffraction (XRD) and Raman spectroscopy. The stable phase B 4 C showed no microstructural or lattice parameter changes. Similarly, lattice parameters of B 5.5 C remained constant, suggesting that B dopant is stable at the given conditions. However, the shortened lattice parameters and reduced Si content of Si-B 6.5 C over the annealing time indicated that Si dopant was in a metastable state at the annealing temperature. Consequently, Si dedoping led to an increase in amorphization (a loss of local crystalline order) which degrades the ballistic performance of boron carbide. The insight highlights the importance of Si dopant in boron carbide and suggests that rapid processing may be necessary to retain more silicon for better performance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Growth, sintering, and chemical states of Co supported on reducible CeO 2 (111) thin films: The effects of the metal coverage and the nature of the support

The growth, sintering, and interaction of cobalt with ceria were studied under ultrahigh vacuum conditions by vapor-deposition of Co onto well-defined CeOx(111) (1.5 < x < 2) thin films grown on Ru(0001). Charge transfer from Co to ceria occurs upon deposition of Co on CeO 1.96 and partially reduced CeO 1.83 at 300 K. X-ray photoelectron spectroscopy studies show that Co is oxidized to Co 2+ species at the cost of the reduction of Ce 4+ to Ce 3+ , at a lesser extent on reduced ceria. Co 2+ is the predominant species on CeO 1.96 at low Co coverages (e.g., ≤0.20 ML). The ratio of metallic Co/Co 2+ increases with the increase in the Co coverage. However, both metallic Co and Co 2+ species are present on CeO 1.83 even at low Co coverages with metallic Co as the major species. Scanning tunneling microscopy results demonstrate that Co tends to wet the CeO 1.96 surface at very low Co coverages at room temperature forming one-atomic layer high structures of Co–O–Ce. The increase in the Co coverage can cause the particle growth into three-dimensional structures. The formation of slightly flatter Co particles was observed on reduced CeO 1.83 . In comparison with other transition metals including Ni, Rh, Pt, and Au, our studies demonstrate that Co on ceria exhibits a smaller particle size and higher thermal stability, likely arising from strong metal–support interactions. The formed particles upon Co deposition at 300 K are present on the ceria surface after heating to 1000 K. The Co–ceria interface can be tuned by varying the Co metal coverage, the annealing temperature, and the nature of the ceria surface.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Wafer-Scale Synthesis of 2D Materials by an Amorphous Phase-Mediated Crystallization Approach

The interest in the wafer-scale growth of two-dimensional (2D) materials, including transition metal dichalcogenides (TMDCs), has been rising for transitioning from lab-scale devices to commercial-scale systems. Among various synthesis techniques, physical vapor deposition, such as pulsed laser deposition (PLD), has shown promise for the wafer-scale growth of 2D materials. However, due to the high volatility of chalcogen atoms (e.g., S and Se), films deposited by PLD usually suffer from a lack of stoichiometry and chalcogen deficiency. To mitigate this issue, excess chalcogen is necessary during the deposition, which results in problems like uniformity or not being repeatable. This study demonstrates a condensed-phase or amorphous phase-mediated crystallization (APMC) approach for the wafer-scale synthesis of 2D materials. This method uses a room-temperature PLD process for the deposition and formation of amorphous precursors with controlled thicknesses, followed by a post-deposition crystallization process to convert the amorphous materials to crystalline structures. This approach maintains the stoichiometry of the deposited materials throughout the deposition and crystallization process and enables the large-scale synthesis of crystalline 2D materials (e.g., MoS 2 and WSe 2 ) on Si/SiO 2 substrates, which is critical for future wafer-scale electronics. We show that the thickness of the layers can be digitally controlled by the number of laser pulses during the PLD phase. Optical spectroscopy is used to monitor the crystallization dynamics of amorphous layers as a function of annealing temperature. The crystalline quality, domain sizes, and the number of layers were explored using nanoscale and atomistic characterization (e.g., AFM, STEM, and EDS) along with electrical characterization to explore process–structure–performance relationships. Finally, this growth technique is a promising method that could potentially be adopted in conventional semiconductor industries for wafer-scale manufacturing of next-generation electronic and optoelectronic devices.

2D electronics↗
DOE OSTI2021

Texture Formation in Polycrystalline Thin Films of All‐Inorganic Lead Halide Perovskite

Abstract Controlling grain orientations within polycrystalline all‐inorganic halide perovskite solar cells can help increase conversion efficiencies toward their thermodynamic limits; however, the forces governing texture formation are ambiguous. Using synchrotron X‐ray diffraction, mesostructure formation within polycrystalline CsPbI 2.85 Br 0.15 powders as they cool from a high‐temperature cubic perovskite (α‐phase) is reported. Tetragonal distortions (β‐phase) trigger preferential crystallographic alignment within polycrystalline ensembles, a feature that is suggested here to be coordinated across multiple neighboring grains via interfacial forces that select for certain lattice distortions over others. External anisotropy is then imposed on polycrystalline thin films of orthorhombic (γ‐phase) CsPbI 3‐ x Br x perovskite via substrate clamping, revealing two fundamental uniaxial texture formations; i) I‐rich films possess orthorhombic‐like texture (<100> out‐of‐plane; <010> and <001> in‐plane), while ii) Br‐rich films form tetragonal‐like texture (<110> out‐of‐plane; <110> and <001> in‐plane). In contrast to relatively uninfluential factors like the choice of substrate, film thickness, and annealing temperature, Br incorporation modifies the γ‐CsPbI 3− x Br x crystal structure by reducing the orthorhombic lattice distortion (making it more tetragonal‐like) and governs the formation of the different, energetically favored textures within polycrystalline thin films.

Steele, Julian A.↗