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At least 145 records · Page 8

Buffer layers for high-Tc thin films on sapphire

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Wu, X. D.↗

Electron Beam Induced Luminescence of SiO2 Optical Coatings

Optical coatings of disordered thin film SiO,/SiO, samples undergoing electron beam bombardment exhibited a cathodoluminescence effect. Measurements were made of the absolute illuminance and emission spectra as functions of incident electron energy (0.2 keV to 30 keV). flux (approx. 0.1 nA/sq cm to > 100 nA/sq cm) and power (<50 nW/sq cm to > 3mW/sq cm) for coatings (approx.60 nm to approx.200 nm thick) on reflective metal substrates over a range of sample temperatures (approx.40 K to approx.400 K) and emission wavelengths (approx.260 nm to approx.5000 nm). Illuminance reached a plateau saturation intensity I(sub sat) approx. 10(exp -4)W/sq cm. scaling as [I(sub mc)/(I + I(sub mc)/I(sub sat)] as incident power I(sub mc) approached I(sub sat). Well below I(sub sat), illuminance scaled linearly with incident power for lower-energy non-penetrating radiation that deposited all of its energy in the dielectric film. At higher incident energies (> 1-5 keV) electrons penetrate the dielectric, depositing only a fraction of their energy in the dielectric film, where deposited energy scales as the ratio of film thickness to penetration range. Since electron range exhibits a peak below approx. 1 keV, the illuminance decreased with increasing energy for penetrating radiation. The temperature dependence of the illuminance. in general, increased with decreasing temperature. Changes in apparent color with temperature were also observed. Four bands in the UV/VIS/NIR range from 300 nm to 1000 nm were observed in spectral measurements; no significant luminescence was detected in a range from approx. 1000 nm to approx. 5000 nm. These different bands either increased or decreased in intensity and shifted slightly in energy with decreasing temperature. Our measurements are explained in terms of simple disordered band theory models based on atomic-scale stochastic transport of electrons in highly disordered insulating materials. The theoretical models provide a fundamental basis for understanding the dependence of cathodoluminescence on irradiation time, incident flux and energy. and sample thickness and temperature. The observed luminescence occurs when an incident high energy electron excites a valence band electron into the conduction band. Following the excitation. a complex series of transitions take place between the extended conduction states and the long-lived localized trapped states (or chromophores) associated with structural or compositional defects in the dielectric materials. Thc transport equations and models of thc spatial and energy distribution of the trapped states below the mobility edge, their occupancy, and transitions provide microscopic scale insights into this macroscopic phenomenon. Our observations and theoretical models are also compared with similar previous room temperature studies of similar SiO2 films.

Dennison, J. R.↗

Ion-beam-induced topography and surface diffusion

It is pointed out that the development of surface topography along with enhanced surface and bulk diffusion processes accompanying ion bombardment have generated growing interest among users of ion beams and plasmas for thin film or material processing. Interest in these processes stems both from attempts to generate topographic changes for specific studies or applications and from the need to suppress or control undesirable changes. The present investigation provides a summary of the current status of impurity-induced texturing, with emphasis on recent developments. Particular attention is given to the texturing accompanying deposition of an impurity material onto a solid surface while simultaneously etching the surface with an ion beam. A description of experimental considerations is provided, and a thermal-diffusion model is discussed along with the development of sputter cones, and aspects of impact-enhanced surface diffusion.

Robinson, R. S.↗

The role of damage-softened material behavior in the fracture of composites and adhesives

Failure mechanisms of materials under very high strains experienced at and ahead of the crack tip such as formation, growth, and interaction of microvoids in ductile materials, microcracks in brittle solids or crazes in polymers and adhesives are represented by one-dimensional, nonlinear stress-strain relations possessing different ways by which the material loses capacity to carry load up to fracture or total separation. A double cantilever beam (DCB) type specimen is considered. The nonlinear material is confined to a thin strip between the two elastic beams loaded by a wedge. The problem is first modeled as a beam on a nonlinear foundation. The pertinent equation is solved numerically as a two-point boundary value problem for both the stationary and the quasi-stationay propagating crack. A finite element model is then used to model the problem in more detail in order to assess the adequacy of the beam model for the reduction of experimental data to determine in-situ properties of the thin interlayer.

Ungsuwarungsri, T.↗

Aligning Three Off-Axis Mirrors with Help of a DOE

A proposed method based on the use of a special-purpose diffractive optical element (DOE) would simplify (relative to prior methods) the alignment of three off-axis mirrors that constitute an imaging optical system. The method would exploit the fact that a DOE can be fabricated lithographically with high accuracy by electron-beam lithography in a thin film of poly(methyl methacrylate). The method would effectively transfer much of the problem of obtaining the needed accuracy from the mechanical-mirror-alignment domain to the lithographic domain. Unlike other methods that depend on specific symmetries (e.g., sphericity and/or concentricity), this method is expected to apply with equal ease and accuracy to mirrors of any configuration including aspherical, decentered mirrors. Assuming that one of the mirrors of a general three-mirror imaging optical system can serve as a reference for the alignment of the other two mirrors, such a system has 12 degrees of freedom in alignment. In the proposed method, one would use an interferometer in combination with a DOE to effect precise and relatively rapid and easy alignment of two of the mirrors with respect to each other, thus reducing the alignment task to that of the six degrees of freedom of the remaining mirror. The figure depicts a representative three-mirror off-axis imaging system, wherein the primary and tertiary mirrors (M1 and M3, respectively) are concave and the secondary mirror (M2) is convex. The DOE for aligning this system would be fabricated on the right surface of an optical flat and could be made to have either negative or positive focusing power, depending on the requirements of the specific application. The DOE could be designed to be placed at any convenient distance from M1 and M3 - again, depending on the application. The DOE would be illuminated with light coming from the left, generated by an interferometer. First, assuming the optical flat is of high quality, the plane of the DOE would be aligned perpendicular to the collimated beam by use of light reflected from the left face of the optical flat. The DOE would comprise two independent areas: one dedicated to M1, the other to M3. The portions of the collimated beam passing through those areas would be diffracted towards the corresponding mirrors. A mask, not shown in the figure, could be used to prevent light from passing through the rest of the area of the optical flat. Light rays reflected from M1 and M3 would retrace their paths through the DOE and would propagate leftward to the interferometer.

Mouroulis, Pantazis↗

Process for High-Rate Fabrication of Alumina Nanotemplates

An anodizing process, at an early stage of development at the time of reporting the information for this article, has shown promise as a means of fabricating alumina nanotemplates integrated with silicon wafers. Alumina nanotemplates are basically layers of alumina, typically several microns thick, in which are formed approximately regular hexagonal arrays of holes having typical diameters of the order of 10 to 100 nm. Interest in alumina nanotemplates has grown in recent years because they have been found to be useful as templates in the fabrication of nanoscale magnetic, electronic, optoelectronic, and other devices. The present anodizing process is attractive for the fabrication of alumina nanotemplates integrated with silicon wafers in two respects: (1) the process involves self-ordering of the holes; that is, the holes as formed by the process are spontaneously arranged in approximately regular hexagonal arrays; and (2) the rates of growth (that is, elongation) of the holes are high enough to make the process compatible with other processes used in the mass production of integrated circuits. In preparation for fabrication of alumina nanotemplates in this process, one first uses electron-beam evaporation to deposit thin films of titanium, followed by thin films of aluminum, on silicon wafers. Then the alumina nanotemplates are formed by anodizing the aluminum layers, as described below. In experiments in which the process was partially developed, the titanium films were 200 A thick and the aluminum films were 5 m thick. The aluminum films were oxidized to alumina, and the arrays of holes were formed by anodizing the aluminum in aqueous solutions of sulfuric and/or oxalic acid at room temperature (see figure). The diameters, spacings, and rates of growth of the holes were found to depend, variously, on the composition of the anodizing solution, the applied current, or the applied potential, as follows: In galvanostatically controlled anodizing, regardless of the chemical composition of the solution, relatively high current densities (50 to 100 mA/cm2) resulted in arrays of holes that were more nearly regular than were those formed at lower current densities. . The rates of elongation of the holes were found to depend linearly on the applied current density: the observed factor of proportionality was 1.2 (m/h)/(mA/cm2). For a given fixed current density and room temperature, the hole diameters were found to depend mainly on the chemical compositions of the anodizing solutions. The holes produced in sulfuric acid solutions were smaller than those produced in oxalic acid solutions. The arrays of holes produced in sulfuric acid were more ordered than were those produced in oxalic acid. . The breakdown voltage was found to decrease logarithmically with increasing concentration of sulfuric acid. The breakdown voltage was also found to decrease with temperature and to be accompanied by a decrease in hole diameter. The hole diameter was found to vary linearly with applied potential, with a slope of 2.1 nm/V. This slope differs from slopes (2.2 and 2.77 nm/V) reported for similar prior measurements on nanotemplates made from bulk aluminum. The differences among these slopes may be attributable to differences among impurities and defects in bulk and electron-beam-evaporated aluminum specimens.

Myung, Nosang↗

Beam-foil-gas spectroscopy - A technique for studying steady-state non-equilibrium processes.

When a thin foil is inserted in the beam of a beam-gas experiment, the beam particle state populations are driven far from their beam-gas equilibrium values. Downstream from the foil, the 'new beam' and gas species interact to produce a new equilibrium, usually different from the beam-gas equilibrium. Experimental results are presented to demonstrate this effect and to show how relative cross-section measurements can be used to study the beam-foil interaction.

Bickel, W. S.↗

ASDTIC duty-cycle control for power converters

The application of analog signal to discrete interval converter (ASDTIC), a hybrid micromodule, two loop control subsystem, to a switching, stepdown dc to dc converter is described. The power circuitry, interface and ASDTIC subsystems used in this switching regulator were developed to exhibit the improved regulation, transient performance, regulator stability and freedom from the effects of variations in parts characteristics due to environmental changes and aging. ASDTIC can be used with other types of power circuits that use duty-cycle control techniques by simple changes in the interface subsystem. The circuitry and performance characteristics of a +10V dc switching converter as well as that of the ASDTIC micromodule are described. Realization of the ASDTIC hybrid micromodule has been accomplished with a hermetically sealed, beam-lead, bonded/deposited nichrome thin film resistors, discrete capacitors and integrated circuits on dilithic, glazed alumina substrates using 22 feed through terminals in an integrated package.

Lalli, V. R.↗

ASDTIC duty-cycle control for power converters.

The application of analog signal to discrete interval converter (ASDTIC), a hybrid micromodule, two-loop control subsystem, to a switching, stepdown dc-to-dc converter is described. The power circuitry, interface and ASDTIC subsystems used in this switching regulator were developed to exhibit the improved regulation, transient performance, regulator stability, and freedom from the effects of variations in parts characteristics due to environmental changes and aging. The circuitry and performance characteristics of a +10-V dc switching converter as well as that of the ASDTIC micromodule are described. Realization of the ASDTIC hybrid micromodule has been accomplished with hermetically sealed, beam-lead, bonded/deposited nichrome thin film resistors, discrete capacitors, and integrated circuits on dilithic, glazed alumina substrates, using 22 feed through terminals in an integrated package.

Lalli, V. R.↗

Efficient solar cells by space processing

Thin films of electron beam evaporated silicon were deposited on molybdenum, tantalum, tungsten and molybdenum disilicide under ultrahigh vacuum conditions. Mass spectra from a quadrapole residual gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry. The presence of phosphorus in the silicon was responsible for attaining elevated temperatures with silicide formations. Heteroepitaxial silicon growth was sensitive to the presence of oxygen during deposition, the rate and length of deposition as well as the substrate orientation.

Schmidt, F. A.↗

Photocurrent Imaging Detects Solar-Module Defects

Raster-scanned laser beam excites photocurrents in thin-film amorphous silicon devices. Solar-cell laser scanner uses two galvanometer-driven mirrors to scan laser-beam spot over surface of module or cell under test. Position signals from scan controllers used to index storage of photocurrent signal data in scan-converter image memory. Stored image displayed on television monitor.

Kim, Q.↗

Earth to space dc to dc power transmission system utilizing a microwave beam as source of energy for electric propelled interorbital vehicles

The paper contributes to the credibility of an electric propelled interorbital transportation system by introducing a new low-mass source of continuous dc power for electric propulsion and illustrating how the source can be economically tied to an electric utility on earth by an electronically steered microwave beam. The new thin-film rectenna, which functions as the receiving end of an earth-to-space microwave power transmission system is described. It is easily fabricated, is over 80 percent efficient, has a specific mass of no more than 2 kilograms per kilowatt of continuous dc power output, and is well adapted for deployment in space. The paper then describes a complete system consisting of the interorbital vehicle and the microwave power transmission system that supplies it with power. A design scenario is used to obtain performance data from the system in terms of vehicle transfer times, payload fractions, and costs. Electric energy costs are found to be less than $1000 per kilogram of payload delivered to geosynchronous orbit from low-earth orbit.

Brown, W. C.↗

Recent developments in materials and detectors for the infrared; Proceedings of the Meeting, Cannes, France, November 25, 26, 1985

The present conference on advancements in IR-sensitive materials and detector technologies employing them gives attention to thermal detectors, focal plane array processing detectors, novel detector designs, general properties of IR optics materials, and preparation methods for such materials. Specific topics encompass the fabrication of InSb MIS structures prepared by photochemical vapor deposition, IR heterodyne detectors employing cadmium mercury telluride, low microphony pyroelectric arrays, IR detection based on minority carrier extrusion, longwave reststrahl in IR crystals, and molecular beam techniques for optical thin film fabrication.

Morten, F. D.↗

An investigation of the second negative system of O2(+) by electron impact

Emission spectrum of O2 from 115 to 300 nm induced by electron impact at 200 eV was obtained using a crossed-beam configuration under optically thin conditions. The second negative system of O2(+) was observed in the range 186-300 nm. Model calculations were performed to derive the contribution made by the second negative system of O2(+) to auroral spectra in the same wavelength range. Observations of the spectral region from 140 to 185 nm, carried out to verify the report of Erdman and Zipf (1986) on the O or O(+) transitions showed no detectable O or O(+) transitions with a cross section upper limit of 10 to the -21 sq cm.

James, G. K.↗

Self-Injection Locking Of Diode Lasers

Simple optical coupling scheme locks array of gain-guided diode lasers into oscillation in single mode and with single-lobed output beam. Selective feedback from thin etalon self-injection-locks array into desired mode. One application of new scheme for pumping of neodymium: yttrium aluminum garnet lasers with diode-laser arrays.

Hemmati, H.↗