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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Multiple pulse charge transfer for capacitive deionization of a fluid

The present disclosure relates to a capacitive deionization system which makes use of a controller, a first capacitor acting as a first electrode, a second capacitor acting as a second electrode, and a first inductor for storing energy received from the first capacitor, and transferring the stored energy to the second capacitor. A first plurality of electronic switches are controlled by the controller to control communication between the first inductor and the first capacitor, and between the first inductor and the second capacitor. An additional energy transfer subsystem is included which has a second inductor for receiving energy from the first capacitor while the first inductor is transferring stored energy to the second capacitor.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Pulsed source for driving non-linear current dependent loads

A pulsed current source comprises a power source, a discharge capacitor, and an inductive element. The discharge capacitor is selectively coupled to either of the power source or the inductive element. When coupled to the power source, the discharge capacitor is charged. The inductive element can be connected to a load. The load can have a current-dependent impedance. When the discharge capacitor is coupled to the inductive element, the discharge capacitor discharges through the inductive element and the load. The discharge capacitor and the inductive element are configured so that the current through the load exhibits a substantially linear rise in a linear operational region. The inductive element is configured to saturate during discharge of the capacitor through the load, so that the saturation of the inductive element causes the current through the load to continue to rise in a substantially linear fashion.

Curtis, III, William C.↗
DOE OSTI2023

Effects of oxidant gas for atomic layer deposition on crystal structure and fatigue of ferroelectric Hf x Zr 1-x O 2 thin films

TiN/Hf x Zr 1-x O 2 (HZO)/TiN capacitors were prepared using two types of HZO films fabricated by atomic layer deposition using H 2 O or O 2 plasma as an oxidant gas, and post-deposition annealing at 400 °C was performed before the TiN top-electrode fabrication. The ferroelectric orthorhombic phase was dominantly formed for the O 2 plasma-based capacitor due to the strongly oxidizing source of O 2 plasma, resulted in higher remanent polarization (2P r = 20 µC/cm 2 ) than that (13 µC/cm 2 ) of the H 2 O-based capacitor. The fatigue properties for the O 2 plasma-based capacitor were improved by 14 % after 106 cycles compared to the H 2 O-based capacitor. This could be attributed to an oxygen-rich interface reaction layer (IRL) including TiO x between the HZO film and TiN bottom-electrode for the O 2 plasma-based capacitor. In conclusion, based on these results, superior 2P r and fatigue properties can be obtained using O 2 plasma-based HZO films.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Pulse charging system

A system, method, and apparatus for pulsed charging applications comprises a bulk capacitor operably connected to a power source, an inductor connected to the bulk capacitor with a charge switch, a pulse capacitor connected to the inductor, a freewheeling diode connecting a point between the charge switch and the inductor to a point after the pulse capacitor, a second diode connecting the inductor to the pulse capacitor, and a pulse switch connecting the pulse capacitor to a load.

42 ENGINEERING↗
DOE OSTI2023

Programmable delay device enabling large delay in small package

A programmable delay device that provides delays of more than 100 ns over a broad bandwidth is disclosed. The device includes an input stage that employs M sampling switched capacitor elements such that each sampling switched capacitor element samples at a rate of only 1/M of the fundamental sampling rate. The device includes a programmable delay stage with M programmable switched capacitor banks, each programmable switched capacitor bank having N delay switched capacitor storage elements. Thus, the programmable delay stage includes a total of M×N delay switched capacitor storage elements, thereby reducing the sampling rate by a factor of M×N. This reduced sampling rate permits much smaller sampling switches, resulting in reduced leakage current and enabling far longer programmable delay times. Lastly, the device includes an output reconstruction stage that reconstructs a delayed version of the input RF signal by combining signals from the programmable delay stage.

Forbes, Travis↗
DOE OSTI2024

Systems and methods for assessing cable insulation

Methods for assessing cable insulation are provided that can include engaging a first tine gap interdigital capacitor assembly with the exterior of the cable jacket to determine a first capacitance and dissipation factor value of the insulation using the first tine gap interdigital capacitor assembly; engaging a second tine gap interdigital capacitor assembly with the exterior of the cable jacket to determine a second capacitance and dissipation factor value of the insulation using the second tine gap interdigital capacitor assembly.Systems for assessing cable insulation are also provided. The systems can include a cable jacket encompassing cable insulation and conductive material; at least two tine gap interdigital capacitor assemblies engaged with the cable jacket; and processing circuitry operatively engaged with the capacitor assemblies.

Glass, III, Samuel W.↗
DOE OSTI2025

Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs

Ferroelectric random access memory (FeRAM) is a promising candidate for energy-efficient nonvolatile memory, particularly for logic-in-memory and compute-in-memory (CIM) applications. Among the available cell architectures, One-Transistor–n-Capacitor (1T-nC) and two-transistor–n-capacitor (2T-nC) FeRAMs each offer distinct trade-offs in density, scalability, and reliability. In this work, we present a comparative study of these two architectures under both dimensional scaling ( XY/Z shrinkage) and vertical integration (increasing stacked capacitors per cell). Using technology computer-aided design (TCAD) and circuit-level simulations, we analyze how scaling impacts ferroelectric capacitance, parasitic coupling, and floating-node (FN) dynamics, which together dictate sense margin (SM) and read stability. A key mitigation strategy—floating unselected capacitors—is applied to both architectures, effectively decoupling the SM from the number of stacked capacitors and enabling tractable analysis across scaling regimes. Results show that 1T-nC suffers more from charge sharing with the bitline (BL), while 2T-nC benefits from transistor isolation and stronger low-voltage sensing at the cost of increased area. By systematically evaluating these behaviors across scaling directions, this work establishes the reliability trade-offs of 1T-nC and 2T-nC cells and provides design guidelines for high-density, vertically integrated FeRAM systems.

1T-nC↗
DOE OSTI2024

AI-assisted discovery of high-temperature dielectrics for energy storage

Abstract Electrostatic capacitors play a crucial role as energy storage devices in modern electrical systems. Energy density, the figure of merit for electrostatic capacitors, is primarily determined by the choice of dielectric material. Most industry-grade polymer dielectrics are flexible polyolefins or rigid aromatics, possessing high energy density or high thermal stability, but not both. Here, we employ artificial intelligence (AI), established polymer chemistry, and molecular engineering to discover a suite of dielectrics in the polynorbornene and polyimide families. Many of the discovered dielectrics exhibit high thermal stability and high energy density over a broad temperature range. One such dielectric displays an energy density of 8.3 J cc −1 at 200 °C, a value 11 × that of any commercially available polymer dielectric at this temperature. We also evaluate pathways to further enhance the polynorbornene and polyimide families, enabling these capacitors to perform well in demanding applications (e.g., aerospace) while being environmentally sustainable. These findings expand the potential applications of electrostatic capacitors within the 85–200 °C temperature range, at which there is presently no good commercial solution. More broadly, this research demonstrates the impact of AI on chemical structure generation and property prediction, highlighting the potential for materials design advancement beyond electrostatic capacitors.

25 ENERGY STORAGE↗