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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Understanding ERE and iVOC Metrics for Graded CdSeTe Absorbers

PL-based external radiative efficiency (ERE) and implied open-circuit voltage (iVOC) metrics were introduced for thin-film solar absorbers to better understand the voltage deficit and diagnose losses in solar cells. Traditionally, elevated ERE and iVOC measurements are associated with diminished recombination within the solar device, a rationale heavily reliant on the assumption of a uniform bandgap and high carrier mobilities in the absorber. Recently, very low mobilities in CdSeTe absorbers (< 1 cm2/(V.s)) were measured using the light-induced transient grading technique. In this study, we use a detailed numerical model of iVOC to investigate the possible reasons of elevated iVOC in realistic CdSeTe absorbers with a graded Se profile. In particular, we examine how the bandgap nonuniformity and the reduced hole mobility in graded CdSeTe absorbers affect iVOC measurements. We show that high iVOC may result from inflated quasi-Fermi level splitting in the high-Se region in the front part of a CdSeTe absorber with slow hole transport. We reproduce the experimentally reported 360 mV increase in iVOC-VOC gap with reduced doping using a model with sub-1 cm2/(V.s) hole mobility in the high-Se region. Based on our results, we conclude that the iVOC metric (or ERE metric) should not be used as a sole metric of CdSeTe absorber quality. We discuss possible ways to extract useful information from the iVOC-VOC gap by supplementing the front-side illumination measurements with back-side illumination measurements.

14 SOLAR ENERGY↗
DOE OSTI2021

Correlating conductivity and Seebeck coefficient to doping within crystalline and amorphous domains in poly(3-(methoxyethoxyethoxy)thiophene)

Molecular doping of conjugated polymers (CPs) plays a vital role in optimizing organic electronic and energy applications. For the case of organic thermoelectrics, it is commonly believed that doping CPs with a strong dopant could result in higher conductivity (σ) and thus better power factor (PF). Herein, by investigating thermoelectric performance of a polar side-chain bearing CP, poly(3- (methoxyethoxyethoxy)thiophene) (P3MEET), vapor doped with fluorinatedderivative of tetracyanoquinodimethane FnTCNQ (n = 1, 2, 4), we show that using strong dopants can in fact have detrimental effects on the thermoelectric performance of CPs. Despite possessing higher electron affinity, doping P3MEET with F4TCNQ only results in a σ (27.0 S/cm) comparable to samples doped with other two weaker dopants F2TCNQ and F1TCNQ (26.4 and 20.1 S/cm). Interestingly, F4TCNQ-doped samples display a marked reduction in the Seebeck coefficient (α) compared to F1TCNQ- and F2TCNQ-doped samples from 42 to 13 μV/ K, leading to an undesirable suppression of the PF. Additionally, structural characterizations coupled with Kang-Snyder modeling of the α–σ relation show that the reduction of α in F4TCNQ-doped P3MEET samples originates from the generation of low mobility carrier within P3MEET's amorphous domain. Our results demonstrate that factors such as dopant distribution and doping efficiency within the crystalline and amorphous domains of CPs should play a crucial role in advancing rational design for organic thermoelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Charge Transfer Properties of Heterostructures Formed by Bi 2 O 2 Se and Transition Metal Dichalcogenide Monolayers

Atomically thin bismuth oxyselenide (Bi 2 O 2 Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi 2 O 2 Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi 2 O 2 Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi 2 O 2 Se and representative transition metal dichalcogenides (namely, WS 2 /Bi 2 O 2 Se and MoS 2 /Bi 2 O 2 Se) is reported. In this work, Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump–probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi 2 O 2 Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Large-Area (Ag,Cu)(In,Ga)Se 2 Thin-Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front-Grading of the Absorber Bandgap

The 1.24 eV bandgap, 18.8% power conversion efficiency Ag-alloyed chalcopyrite (Ag,Cu)(In,Ga)Se 2 (ACIGS) solar cells are characterized to relate voltage and efficiency improvements to electro-optical (EO) characteristics. Shockley-Read-Hall recombination center defect density, identified and characterized through deep level transient spectroscopy and time-resolved photoluminescence (TRPL), is reduced through potassium and copper treatment optimization. Concomitantly, longer minority carrier lifetimes are achieved, which increases open-circuit voltage (V OC ). Near-conduction band defects associated in earlier studies with light-induced current instability are also mitigated. Analysis of charge-carrier dynamics after single- and two-photon excitation is used to separate recombination at the front interface and in the absorber bulk. From TRPL decay simulations, the authors estimate ranges of key solar cell material characteristics: bulk carrier lifetime T bulk = 110-210 ns, charge-carrier mobility u = 110-160 cm 2 V -1 s -1 , and front interface recombination velocity S front = 700-1050 cm s -1 . This lowest-reported S front for ACIGS absorbers originates from the notched conduction band grading, which also makes the impact of the back interface recombination negligible. It is suggested in the results that solar cell performance enhancements can be made most readily with two distinct strategies: improving device architecture and reducing semiconductor defect densities. Using these approaches, power conversion efficiency in large-area solar cells is improved by 1.1% absolute.

14 SOLAR ENERGY↗
DOE OSTI2022

Enhance the performance of organic solar cells by nonfused ring electron acceptors bearing a pendent perylenediimide group

A new nonfused ring electron acceptor PDI-DO-2F is designed and synthesized by attaching perylenediimide (PDI) unit as a pendent group to the central donor core. Compared with the control molecule DO-2F, the introduction of PDI lateral substituent can greatly enhance the solubility and decrease the crystallinity of the resulted acceptor. The PBDB-T:PDI-DO-2F blend film exhibits a much better morphology with higher and more balanced carrier mobility in contrast to PBDB-T:DO-2F one. PDI-DO-2F based organic solar cells (OSCs) give a power conversion efficiency (PCE) of 11.78%, higher than DO-2F based ones (9.82%). Furthermore, PDI-DO-2F based OSCs shows a ΔE non-rad value of 0.23 eV, which is significantly lower than the DO-2F based ones (0.28 eV). More importantly, the addition of PDI-DO-2F as the third component to the PBDB-T:DO-2F binary system can optimize the morphology of blend films and improve the shelf stability of devices. Finally, the PBDB-T:DO-2F:PDI-DO-2F based ternary OSCs achieve a higher PCE of 13.82%.

14 SOLAR ENERGY↗
DOE OSTI2022

Understanding the p-doping of spiroOMeTAD by tris(pentafluorophenyl)borane

The solid-state organization of photoabsorber, hole and electron transporting layers, and interfaces between them plays an important role in governing the performance and stability of emerging optoelectronic devices such as perovskite solar cells (PSCs). The molecular organic semiconductor (OSC) 2,2' ,7,7' -tetrakis [N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiroOMeTAD) is a promising hole-transporting material (HTM) for PSCs, which is p-doped by molecular dopants to augment the charge carrier mobility. Here, the p-type doping of spiroOMeTAD by tris(pentafluorophenyl)borane (BCF) is investigated by a combination of techniques including optical spectroscopy, X-ray diffraction, Fourier transform infrared (FTIR), solid-state (ss)NMR, and electron paramagnetic resonance (EPR) spectroscopy. BCF molecules interact with traces of water molecules to form BCF-water complexes. Optical spectroscopy analysis suggests that the BCF/BCF-water complexes oxidize spiroOMeTAD molecules and facilitate p-type doping of spiroOMeTAD molecules. The different distributions of BCF and BCF-water molecules in doped spiroOMeTAD are characterized by FTIR and 11B NMR spectroscopy. An NMR crystallography approach which combines two-dimensional (2D) ssNMR and crystallography modeling is employed to unravel the packing interactions in spiroOMeTAD, and this analysis is extended to probe the morphological and structural changes in spiroOMeTAD:BCF blends. The hyperfine interactions are characterized by 2D hyperfine sub-level correlation (HYSCORE) spectroscopy. In this way, insight into the complex spiroOMeTAD:BCF blend morphology is obtained and compared for different dopant concentrations. Further, molecular-level analysis of doped HTMs enabled by this study has much wider relevance for further investigation, for example, chemical design and interfacial engineering of p-type doped HTMs for stable and efficient hybrid perovskite photovoltaics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Magnetic and transport properties of Fe-doped Weyl semimetal Co 3 Sn 2 S 2

Ferromagnetic Weyl semimetal Co 3 Sn 2 S 2 has recently attracted a lot of interest on account of its large non-saturating magnetoresistance and the high carrier mobility common to topological semimetals. Moreover, the material also provides a platform for studying the interplay between the intrinsic magnetism and topological band structures, which generates a significant anomalous Hall effect. Chemical doping is the usual approach to adjust materials’ properties, and it can lead to fascinating results. Here, we present the influence of Fe-doping on the magnetic and transport properties of polycrystalline Co 3 Sn 2 S 2 . The Fe-doping suppresses the sample’s magnetic order, increases the electrical resistivity, results in a skew-scattering contribution to the anomalous Hall effect and Fe impurities cause the Kondo effect. In addition, we report on the impact of Fe-doping on the magnetoresistance of Co 3 Sn 2 S 2 , where Fe-doping leads to a dramatic decline in magnetoresistance. Furthermore, the hysteresis behavior in the low magnetic field region, detected previously in nanoflake samples only, is observed in both pure and Fe-doped Co 3 Sn 2 S 2 bulk samples. Finally, our findings serve as a reference and source of inspiration for future chemical doping research on topological semimetals.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Homoepitaxial growth of 9,10-diphenylanthracene

Organic single crystals are often shown to have significantly improved optoelectronic properties over polycrystalline thin films such as exciton diffusivity and carrier mobility. There is growing interest in incorporating such crystals in organic electronics despite a number of challenges. In this work, the homoepitaxial vapor phase growth modes for 9,10-diphenylanthracene (DPA) homoepitaxy are mapped as a function of growth rate and temperature using in situ ultra-low current reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), and atomic force microscopy (AFM). Vapor phase deposition was performed on free-standing single crystal DPA substrates, which show clear Kikuchi patterns. At room temperature, a transition from Frank-Van der Merwe layer-by-layer growth to step-flow growth is observed as the deposition rate is decreased, while at lower temperatures a Stranski-Krastanov layer-plus-island growth is observed. This is the first demonstration of true step-flow growth from room temperature vapor phase deposition for organic semiconductors and is reminiscent of traditional semiconductor growth regimes. Accordingly, these results could lead to improved control over growth and doping of organic single crystals, and lead to enhanced single crystal organic optoelectronic applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Enhancing the performance of the perovskite solar cells by modifying the SnO 2 electron transport layer

The tin oxide (SnO 2 ) electron transport layer (ETL) plays a vital role in the photo-conversion efficiency (PCE) and stability of organic-inorganic perovskite solar cells (PSCs). However, SnO 2 ETL-induced defects such as hydroxyl groups, oxygen vacancies, exposed Sn atoms, and dangling bonds hinder device performance. In this study, rubidium chloride (RbCl) has been used to modify the SnO 2 ETL. Perovskite film formed on the RbCl-modified SnO 2 ETL exhibits improved crystallinity with enlarged grain size and reduced grain boundaries and enhanced optical absorption. Further, the Hall-effect measurements indicate the improved carrier mobility, and the dark J-V curve shows the increment of electrical conductivity for the RbCl-modified SnO 2 ETL. X-ray photoelectron spectroscopy (XPS) results demonstrate the surface defects passivation of the perovskite layer by modifying the SnO 2 ETL. A champion PCE of 19.35% has been achieved for the RbCl-modified SnO 2 ETL-based devices with improved stability, while the control devices with unmodified SnO 2 ETL show a PCE of 17.18%.

14 SOLAR ENERGY↗
DOE OSTI2022

Perturbing the spin state and conduction of Fe (II) spin crossover complexes with TCNQ

In this study, we investigated modifications driven by 7,7,8,8-tetracyanoquinodimethane (TCNQ) to the spin state configuration of [Fe(3-bpp) 2 ](TCNQ) 2 co-crystal and both spin state and electric conductivity of [Fe{H 2 B(pz) 2 } 2 (bipy)] and TCNQ mixtures. The Fe 2+ site in the [Fe(3-bpp) 2 ](TCNQ) 2 co-crystal has a sizable orbital moment. During X-ray absorption measurements, the iron ion is partially excited to the high spin state and strong surface effects are indicated. Mixing TCNQ with the [Fe{H 2 B(pz) 2 } 2 (bipy)] spin crossover complex leads to a molecular combination with increased conductivity and drift carrier lifetimes. [Fe{H 2 B(pz) 2 } 2 (bipy)] thin films with TCNQ, grown using dimethylformamide (DMF), are to great extent locked mainly in the low spin (LS) state across a broad temperature range and exhibit drift carrier lifetimes approaching 0.5 s. When deposited onto a ferroelectric polyvinylidenefluoride-hexafluoropropylene thin film substrate, [Fe{H 2 B(pz) 2 } 2 (bipy)], shows enhanced transistor carrier mobility, likely associated with the increasing cationic character of [Fe{H 2 B(pz) 2 } 2 (bipy)] thin films with TCNQ.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Nanostructures evolution assessment and spectroscopic properties modification induced by electronic energy loss in KTaO 3 crystal

Modifications of micro/nanostructure and photoelectric properties under swift ion irradiation (645 MeV Xe 35+ ) of KTaO 3 crystal with varying electronic energy losses (7.2–31.4 keV/nm) and ion velocities (0.18–5.00 MeV/u) have been studied by combining experimental and calculated approaches. The i-TS calculations combined with molecular dynamics simulations are compared with the experimental observations, revealing the inner track fine structures from individual spherical defects to continuous ion tracks with core–shell morphologies, and a quantitative relationship, including the melting (0.42 eV/atom), damage (0.75 eV/atom), and amorphous (1.71 eV/atom) thresholds, is established to successfully predict the inner disorder/amorphous proportions and track damage morphologies. The surface nanostructures of nanohillocks (isolated or partial overlaps) and nanopits (serious overlaps) directly depend on the combined action of the deposited potential and kinetic energies of incident ions, which induce local melting and sublimation in the near-surface region. Owing to the decreased recombination and the increased separation efficiency between electrons and holes, the higher photogenerated charge carrier mobility enhanced the photocurrent effect, further optimizing the photoconductivity performance in Xe 35+ -irradiated KTaO 3 . Therefore, controlled defect engineering using the ion irradiation technique, as an effective strategy, could design tailored nanostructure systems and regulate photoelectric properties, further promoting the development of novel technological applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

A universal and facile approach for building multifunctional conjugated polymers for human-integrated electronics

Polymer semiconductors have shown distinct promise for the development of human- integrated electronics, owing to their solution processability and mechanical softness. However, numerous functional properties required for this application domain face synthetic challenges to be imparted onto conjugated polymers and thus combined with efficient charge- transport property. Here, we develop a “click-to-polymer” (CLIP) synthesis strategy for conjugated polymers, which uses a click reaction for the facile and versatile attachment of diverse types of functional units to a pre-synthesized conjugated-polymer precursor. With four types of functional groups, we show that functionalized polymers from this CLIP method can still retain good charge-carrier mobility. Here, we take two realized polymers to showcase the photo-patternable property and biochemical sensing function, both of which advance the state of the art of realizing these two types of functions on conjugated polymers. We expect the expanded use of this synthesis approach can largely enrich the functional properties from conjugated polymers.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Supported ionic liquid membranes (SILMs) with exceptional selectivity and permeability for dilute CO 2 separations

Supported ionic liquid membranes (SILMs), containing phosphonium ionic liquids with aprotic N-heterocyclic anions (AHA ILs) in an inert inorganic support, were tested under both dry and humidified (40 % RH) mixed-gas conditions down to 420 ppm CO 2 in N 2 at 35 °C. In the dry case, the best performing IL, triethyl(octyl)phosphonium 4-bromopyrazolide ([P 2228 ][4-BrPyra]) exhibited mixed-gas CO 2 permeabilities and CO 2 /N 2 permeability selectivities as high as 26,800 barrer and 7,000, respectively. In the presence of humidity, the CO 2 permeability and CO 2 /N 2 selectivity increased to 49,100 barrer and 13,200, respectively, and these are the highest reported combination in the literature. Humidity amplifies CO 2 permeabilities and CO 2 /N 2 permeability selectivities through increases in CO 2 capacity due to bicarbonate formation and through faster mobility of the mobile carrier from decreased viscosity. Furthermore, N 2 permeability stayed roughly invariant in the presence of humidity, likely from competing effects of viscosity reduction and lower N 2 solubility.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Compromise between band structure and phonon scattering in efficient n-Mg 3 Sb 2-x Bi x thermoelectrics

n-type Mg 3 Sb 2 -based materials have become a top candidate for efficient thermoelectric applications within 300–700 K, due to its high band degeneracy, inherently high carrier mobility and low lattice thermal conductivity, as well as its advantages of less toxicity and abundance. Existing works showed that Mg 3 Bi 2 -alloying largely help ensure the exceptional performance, leaving a key issue to be uncovered on the primary mechanisms favoring or limiting the thermoelectric performance of Mg 3 Sb 2-x Bi x alloys. Furthermore we focus on the alloy composition dependent transport properties at various temperatures, with a large volume of experimental data. It is revealed that, with increasing x, the reduction in both inertial mass and lattice thermal conductivity is significantly beneficial, but the closure in band gap leads to a strong compensation due to the bipolar effect. Such a compromise between band structure and phonon scattering results in optimal Mg 3 Bi 2 -alloying concentrations to be about 50%–75% at 300 K, 50%–60% at 450 K and 50% at 600 K, which successfully guiding this work to realize extraordinary thermoelectric figure of merit at these temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Origin of ultralow phonon transport and strong anharmonicity in lead-free halide perovskites

All-inorganic lead-free halide double perovskites offer a promising avenue toward non-toxic, stable optoelectronic materials, properties that are missing in their prominent lead-containing counterparts. Their large thermopowers and high carrier mobilities also make them promising for thermoelectric applications. Here, in this work, we present a first-principles study of the lattice vibrations and thermal transport behaviors of Cs 2 SnI 6 and γ-CsSnI 3 , two prototypical compounds in this materials class. We show that conventional static zero temperature density functional theory (DFT) calculations severely underestimate the lattice thermal conductivities (κ l ) of these compounds, indicating the importance of dynamical effects. By calculating anharmonic renormalized phonon dispersions, we show that some optic phonons significantly harden with increasing temperature (T), which reduces the scattering of heat carrying phonons and enhances calculated κ l values when compared with standard zero temperature DFT. Furthermore, we demonstrate that coherence contributions to κ l , arising from wave like phonon tunneling, are important in both compounds. Overall, calculated κ l with temperature-dependent interatomic force constants, built from particle and coherence contributions, are in good agreement with available measured data, for both magnitude and temperature dependence. Large anharmonicity combined with low phonon group velocities yield ultralow values, with room temperature values of 0.26 W/m-K and 0.72 W/m-K predicted for Cs 2 SnI 6 and γ-CsSnI 3 , respectively. We further show that the lattice dynamics of these compounds are highly anharmonic, largely mediated by rotation of the SnI6 octahedra and localized modes originating from Cs rattling motion. These thermal characteristics combined with their previously computed excellent electronic properties make these perovskites promising candidates for optoelectronic and room temperature thermoelectric applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Enhanced thermoelectric performance of PbSe-graphene nanocomposite manufactured with acoustic cavitation induced defects

An order of magnitude rise in the thermoelectric (TE) performance of the PbSe, a scalable and easy-to-manufacture TE material, has been achieved by incorporating reduced graphene oxide (Gr) nanoplatelets in a PbSe/PbSeO 3 heterostructure formed by acoustic cavitation-assisted oxidation. The fabricated Gr/PbSe/PbSeO 3 nanocomposites exhibit high TE performance with an exceptionally high Seebeck coefficient coupled with low thermal conductivity. The variation in the Seebeck coefficient has been attributed to a reduction in charge carrier mobility due to the ferroelectric polarization effect. Furthermore, the increase in electrical resistivity is minimized by adding graphene. At an optimal weight fraction (0.2 wt%), graphene nano-inclusions lead to superior Seebeck coefficient values as high as ~2000 μV/K at ~500 K, providing high overall TE performance. This study shows substantial changes in the TE properties of PbSe through the incorporation of graphene and PbSeO 3 . The understanding and methodology developed in this study can be exploited for the scalable manufacturing of high-performance TE materials.

Structure-property correlations↗