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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1996

Some Aspects of PVT Low Supersaturation Nucleation and Contactless Crystal Growth

The basic principles of the contactless growth of crystals from the vapor in combination with the process of low-supersaturation nucleation are discussed. The mathematical formulation of the morphological stability criterion in vapor growth systems is given and its implications for contactless growth technique are analyzed. A diagram for selection of proper temperature conditions for growth of CdTe crystals is presented.

Grasza, K.↗
NASA NTRS1998

Experimental Study of the Low Supersaturation Nucleation in Crystal Growth by Contactless Physical Vapor Transport

The process of the development of the nuclei and of subsequent seeding in 'contactless' physical vapor transport is investigated experimentally. Consecutive stages of the Low Supersaturation Nucleation in 'contactless' geometry for growth of CdTe crystals from the vapor are shown. The effects of the temperature field, geometry of the system, and experimental procedures on the process are presented and discussed. The experimental results are found to be consistent with our earlier numerical modeling results.

Grasza, K.↗
NASA NTRS1998

Numerical Modeling of Physical Vapor Transport in Contactless Crystal Growth Geometry

Growth from the vapor under conditions of limited contact with the walls of the growth ampoule is beneficial for the quality of the growing crystal due to reduced stress and contamination which may be caused by interactions with the growth container. The technique may be of a particular interest for studies on crystal growth under microgravity conditions: elimination of some factors affecting the crystal quality may make interpretation of space-conducted processes more conclusive and meaningful. For that reason, and as a part of our continuing studies on 'contactless' growth technique, we have developed a computational model of crystal growth process in such system. The theoretical model was built, and simulations were performed using the commercial computational fluid dynamics code, (CFD) ACE. The code uses an implicit finite volume formulation with a gray discrete ordinate method radiation model which accounts for the diffuse absorption and reflection of radiation throughout the furnace. The three-dimensional model computes the heat transfer through the crystal, quartz, and gas both inside and outside the ampoule, and mass transport from the source to the crystal and the sink. The heat transport mechanisms by conduction, natural convection, and radiation, and mass transport by diffusion and convection are modeled simultaneously and include the heat of the phase transition at the solid-vapor interfaces. As the thermal boundary condition, temperature profile along the walls of the furnace is used. For different thermal profiles and furnace and ampoule dimensions, the crystal growth rate and development of the crystal-vapor and source-vapor interfaces (change of the interface shape and location with time) are obtained. Super/under-saturation in the ampoule is determined and critical factors determining the 'contactless' growth conditions are identified and discussed. The relative importance of the ampoule dimensions and geometry, the furnace dimensions and its temperature, and the properties of the grown material are analyzed. The results of the simulations are compared with related experimental results on growth of CdTe, CdZnTe, ZnTe, PbTe, and PbSnTe crystals by this technique.

Palosz, W.↗
NASA NTRS1998

The Origin and Time Dependence of the Amount and Composition of Non-Constituent Gases Present in Crystal Growth Systems

Presence of different, non-constituent gases may be a critical factor in crystal growth systems. In Physical Vapor Transport processes the cras(es) can be used intentionally (to prevent excessively high, unstable growth conditions), or can evolve unintentionally during the course of the process (which may lead to undesired reduction in the -rowth rate). In melt growth, particularly under low gravity conditions (reduced hydrostatic pressure) the gas present in the system may contribute to formation of voids in the growing crystals and even to a separation of the crystal and the liquid phase [1]. On the other hand, some amount of gas may facilitate 'contactless' crystal growth particularly under reduced gravity conditions [2 - 6]. Different non-constituent gases may be present in growth ampoules, and their amount and composition may change during the crystallization process. Some gases can appear even in empty ampoules sealed originally under high vacuum: they may diffuse in from the outside, and/or desorb from the ampoule walls. Residual gases can also be generated by the source materials: even very high purity commercial elements and compounds may contain trace amounts of impurities, particularly oxides. The oxides may have low volatilities themselves but their reaction with other species, particularly carbon and hydrogen, may produce volatile compounds like water or carbon oxides. The non-constituent gases, either added initially to the system or evolved during the material processing, may diffuse out of the ampoule during the course of the experiment. Gases present outside (e.g. as a protective atmosphere or thermal conductor) may diffuse into the ampoule. In either case the growth conditions and the quality of the crystals may be affected. The problem is of a particular importance in sealed systems where the amount of the gases cannot be directly controlled. Therefore a reasonable knowledge and understanding of the origin, composition, magnitude, and change with time of gases present in sealed ampoules may be important for a meaningful control and interpretation of crystal growth processes. This problem is of a particular importance for processing of electronic materials in space because (i) safety considerations require using sealed systems only, and (ii) high cost of crystal growth experiments in microgravity calls for a throughout, accurate description of the processing conditions necessary for a meaningful, efficient, and conclusive interpretation of the space results. In this paper we present the results of our extensive studies on gases in closed crystal growth systems which include: (a) Degassing properties of fused silica; (b) Generation of inert gases by source materials (CdTe, ZnTe, CdZnTe, ZnSe, PbTe, PbSe, PbSeTe); (c) Diffusive cas losses from silica glass ampoules.

Palosz, Witold↗
NASA NTRS1998

3-D Modeling of Directional Solidification of a Non-Dilute Alloy with Temperature and Concentration Fields Coupling via Materials Properties Dependence and via Double Diffusive Convection

Numerical simulation of the HgCdTe growth by the vertical Bridgman method was performed using FIDAP finite element code. Double-diffusive melt convection is analyzed, as the primary factor at controls inhomogeneity of the solidified material. Temperature and concentration fields in the model are also coupled via material properties, such as thermal and solutal expansion coefficients with the dependence on both temperature and concentration, and melting temperature evaluation from pseudobinary CdTe-HgTe phase diagram. Experimental measurements were used to obtain temperature boundary conditions. Parametric study of the melt convection dependence on the gravity conditions was undertaken. It was found, that the maximum convection velocity in the melt can be reduced under certain conditions. Optimal conditions to obtain a near flat solidified interface are discussed. The predicted interface shape is in agreement with one obtained experimentally by quenching. The results of 3-D calculations are compared with previous 2- D findings. A video film featuring 3-D melt convection will be presented.

Bune, Andris V.↗
NASA NTRS2001

Kelvin Probe Measurements on Solar Cells and Other Thin Film Devices

The Kelvin Probe (KP) has been used for years to measure the surface potential of metals and semiconductors. The KP is an elegantly simple but powerful tool invented by Lord Kelvin around the turn of the century. Using changes in surface potentials as a result of changing the intensity and wavelength of illumination, the KP returns data on material parameters such as band gap energies and the energy levels of interface states. We have employed the KP in the study of CdTe-based solar cells and quantum dot-based solar cells, as well as other thin-film devices. We hope eventually that the KP will be used as an in-line testing station for a fabrication process so that unfinished devices that will not meet requirements can be thrown out before the processing is completed, thus saving resources. Results of these studies will be presented.

Delk, John↗
NASA NTRS2001

Characterization and In-Situ Monitoring of ZnSe Crystal Growth by Seeded PVT for Microgravity Applications

Crystal growth from the vapor phase continues to play a significant role in the production of II-VI semiconductor compounds (ZnO, ZnTe, CdTe, etc.) and SiC. As compared to melt growth methods (where available) the advantages are: (1) lower growth temperature(s); (2) reduction in defect concentration; (3) additional purification; and (4) enhanced crystal perfection. A powerful tool in determining the mechanism of PVT is microgravity. Under normal gravity conditions the transport mechanism is a superposition of diffusive and convective fluxes. Microgravity offers the possibility of studying the transport properties without the influence of convective effects. Research on the crystal growth of ZnSe by PVT (P.I.: Su of NASA/MSFC) will help to clarify the effects of convection on crystal growth. A crystal growth furnace with in-situ and real time optical monitoring capabilities was constructed and used to monitor the vapor composition and growing crystal surface morphology during the PVT growth of ZnSe. Using photoluminescence and SIMS, ex-situ, the incorporation of point defects (Zn vacancy) and impurities was found to be correlated to the gravity vector due to the influence of the convective flow. A summary of the results to date will be presented.

Feth, Shari T.↗
NASA NTRS2002

Space and Terrestrial Photovoltaics: Synergy and Diversity

A historical view of the research and development in photovoltaics from the perspective of both the terrestrial and the space communities is presented from the early days through the '70s and '80s and the '90s and beyond. The synergy of both communities in the beginning and once again in the present and hopefully future are highlighted, with examples of the important features in each program. The space community which was impressed by the light-weight and reliability of photovoltaics drove much of the early development. Even up to today, nearly every satellites and other scientific space probe that has been launched has included some solar power. However, since the cost of these power systems were only a small fraction of the satellite and launch cost, the use of much of this technology for the terrestrial marketplace was not feasible. It was clear that the focus of the terrestrial community would be best served by reducing costs. This would include addressing a variety of manufacturing issues and raising the rate of production. Success in these programs and a resulting globalization of effort resulted in major strides in the reduction of PV module costs and increased production. Although, the space community derived benefit from some of these advancements, its focus was on pushing the envelope with regard to cell efficiency. The gap between theoretical efficiencies and experimental efficiencies for silicon, gallium arsenide and indium phosphide became almost non-existent. Recent work by both communities have focused on the development thin film cells of amorphous silicon, CuInSe2 and CdTe. These cells hold the promise of lower costs for the terrestrial community as well as possible flexible substrates, better radiation resistance, and higher specific power for the space community. It is predicted that future trends in both communities will be directed toward advances through the application of nanotechnology. A picture is emerging in which the space and terrestrial solar cell communities shall once again share many common goals and, in fact, companies may manufacture both space and terrestrial solar cells in III-V materials and thin film materials. Basic photovoltaics research including these current trends in nanotechnology provides a valuable service for both worlds in that fundamental understanding of cell processes is still vitally important, particularly with new materials or new cell structures. It is entirely possible that one day we might have one solar array design that will meet the criteria for success in both space and on the Earth or perhaps the Moon or Mars.

Bailey, Sheila↗
NASA NTRS2003

Uses of Computed Tomography for Characterizing Materials Grown Terrestrially and in Microgravity

Tomography (CT) has proved to be of inestimable use in providing a rapid evaluation of a variety of samples from Mechanics of Granular Materials (MGM) to electronic materials (Ge-Si alloys) to space grown materials such as meteorites. The system at Kennedy Space Center (KSC), because of its convenient geographical location, is ideal for examining samples before launch and immediately after returning to Earth. It also has the advantage of the choice of fluxes, and in particular the use of a radioactive cobalt source, which is basically monochromatic. This permits a reasonable measurement of density to be made from which chemical composition can be determined. Due to the current dearth of long duration space grown materials, the CT instrument has been used: (1) to characterize materials in preparation for flight, (2) to determine thermal expansion values, and (3) to examine long duration space grown materials, i.e. meteorites. This work will first describe the establishment of the protocol for obtaining the optimum density readings for any material. Included will be the effects of the hardware or instrumental parameters that can be controlled, and the techniques used to process the CT data. Examples will be given of the compositional variation along a single crystal of Ge-Si alloy. Density variation with temperature has been measured in preparation for future materials science experiments; this involved the fabrication at MSFC and installation of a single zone furnace at KSC incorporating a heat pipe to ensure high temperature uniformity. At the time of writing the thermal expansion of lead (Pb) has been measured from room temperature to 900 C. Three methods are available. Digital radiography enables length changes to be determined. Prior to melting the sample is smaller than the container and the diameter change can be measured. Most critical, however, is the density change in solid, through the melting region, and in the liquid state. These data are needed for engineering purposes to aid in the design of containment cartridges, and for enabling fluid flow calculations. A second sample, with the Pb alloyed with Sb is ready for scanning. This corresponds to the planned composition of Dr. Poirier s flight experiment. Other materials pertinent to NASA programs such as Al-Cu (Trivedi), CdTe (Banish), HgCdTe (Lehoczky) will be examined below and above the melting point. Finally, three-dimensional results will be shown of the structure of a two-phase metallic meteorite of metal and sulfide, in which the Fe-Ni phase has coarsened during slow cooling over hundreds of millions of years.

Source record↗
NASA NTRS2004

Combining Hard with Soft Materials in Nanoscale Under High-Pressure High-Temperature Conditions

Nano-composites with a primary nanocrystalline ceramic matrix and a secondary nanocrystalline material (metal or semiconductor) were synthesized by infiltration of an appropriate liquid into ceramic compacts under pressures of up to 8 GPa and temperatures of up to 2000 K. The purpose of our work is to obtain nanocomposites which constitute homoger?ous mixtures of two phases, both forming nano- grains of about 10 nm in size. The high pressure is used to bring the porosity of the compacted powders down to the nano-scale and force a given liquid into the nano-sized pores. The advantage of the infiltration technique is that, in a single, continuous process, we start with a nanocrystalline powder, compress it to form the matrix of the composite, and crystallize and/or synthesize a second nanomaterial in the matrix pores. The key limitation of this technology is, that the pores in the matrix need to stay open during the entire process of infiltration. Thus the initial powder should form a rigid skeleton, otherwise the so-called self-stop process can limit cr block a further flow of the liquid phase and hinder the process of the composite formation. Therefore powders of only very hard ceramic materials like diamond, Sic, or Alz03, which can withstand a substantial external load without undesired deformation, can be used as the primary phase. With this technique, using diamond and S i c ceramic powders infiltrated by liquid metals (AI, Zn, Sn, Ag, Au) and semiconductors (Si, Ge, GaAs, CdTe), we obtained nano-composites with the grain size in the range of 10 - 30 nm. Our work addresses the key problem in manufacturing bulk nanocrystalline materials, i.e. preservation of nano-scale during the fabrication process. In this paper we discuss basic technical and methodological problems associated with nano-infiltration based on the results obtained for Zn-Sic composites.

Palosz, B.↗
NASA NTRS2005

Composition-Temperature-Partial Pressures Data for Cd(sub 0.8)Zn(sub 0.2)Te by Optical Absorption Measurements

Known weights of Cd, Zn and Te were reacted in silica optical cells of known volume and the partial pressure of Te2 and Zn between 485 and 1160 C were determined by measuring the optical density of the vapor in the ultra-violet to visible range. The composition of the condensed phase or phases was calculated from the original weights and the amount of material in the vapor phase. The corresponding composition - temperature - partial pressures, x(sub Te)-T-P(sub Te2), data, including five Te-rich solidus points, were established. The solubility range for the Te-rich Cd(sub 0.8)Zn(sub 0.2)Te(s) is similar to that of CdTe(s) with x(sub Te) = 0.50005 at 809 C and an estimated maximum solubility of x(sub Te) = 0.50012 at about 1000 C. The partial pressure of Cd and Te(sub 2) measured over the Cd(sub 0.8)Zn(sub 0.2)Te melt at 1140 C were about 1.55 and 0.02 atm, respectively, and the corresponding P(Sub Zn) was estimated to be 0.05 atm. It was recommended that a Cd reservoir maintaining at 800 to 820 C should be used during directional solidification of Cd(sub o.8)Zn(sub 0.2)Te to prevent the preferential loss of Cd to the vapor phase.

Su, Ching-Hua↗
NASA NTRS2004

Thin-Film Solar Cells on Polymer Substrates for Space Power

Photovoltaic arrays have played a key role in power generation in space. The current technology will continue to evolve but is limited in the important mass specific power metric (MSP or power/weight ratio) because it is based on bulk crystal technology. Solar cells based on thin-film materials offer the promise of much higher MSP and much lower cost. However, for many space applications, a 20% or greater AM0 efficiency (eta) may be required. The leading thin-film materials, amorphous Si, CuInSe, and CdTe have seen significant advances in efficiency over the last decade but will not achieve the required efficiency in the near future. Several new technologies are herein described to maximize both device eta and MSP. We will discuss these technologies in the context of space exploration and commercialization. One novel approach involves the use of very lightweight polyimide substrates. We describe efforts to enable this advance including materials processing and device fabrication and characterization. Another approach involves stacking two cells on top of each other. These tandem devices more effectively utilize solar radiation by passing through non-absorbed longer wavelength light to a narrow-bandgap bottom cell material. Modeling of current devices in tandem format indicates that AM0 efficiencies near 20% can be achieved with potential for 25% in the near future. Several important technical issues need to be resolved to realize the benefits of lightweight technologies for solar arrays, such as: monolithic interconnects, lightweight array structures, and new ultra-light support and deployment mechanisms. Recent advances will be stressed.

Hepps, A. F.↗
NASA NTRS2005

Recent Progress in CuInS2 Thin-Film Solar Cell Research at NASA Glenn

The National Aeronautics and Space Administration (NASA) is interested in developing low-cost highly efficient solar cells on light-weight flexible substrates, which will ultimately lower the mass-specific power (W/kg) of the cell allowing extra payload for missions in space as well as cost reduction. In addition, thin film cells are anticipated to have greater resistance to radiation damage in space, prolonging their lifetime. The flexibility of the substrate has the added benefit of enabling roll-to-roll processing. The first major thin film solar cell was the "CdS solar cell" - a heterojunction between p-type CuxS and n-type CdS. The research on CdS cells started in the late 1950s and the efficiency in the laboratory was up to about 10 % in the 1980s. Today, three different thin film materials are leading the field. They include amorphous Si, CdTe, and Cu(In,Ga)Se2 (CIGS). The best thin film solar cell efficiency of 19.2 % was recently set by CIGS on glass. Typical module efficiencies, however, remain below 15 %.

Jin, M. H.-C.↗
NASA NTRS1993

Photorefractive Semiconductors and Applications

Photorefractive semiconductors are attractive for information processing, becuase of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ration. This paper presents recent experimental results on information processing using photorefractive GaAs, InP and CdTe, including image processing with semiconductor lasers.

Photorefractive Semiconductors↗
NASA NTRS1983

Visible light to electrical energy conversion using photoelectrochemical cells

Sustained conversion of low energy visible or near i.r. light (>1.25 eV) to electrical energy has been obtained using wet photoelectrochemical cells where there are no net chemical changes in the system. Stabilization of n-type semi-conductor anodes of CdS, CdSe, CdTe, GaP, GaAs and InP to photoanodic dissolution is achieved by employing selected alkaline solutions of Na.sub.2 S, Na.sub.2 S/S, Na.sub.2 Se, Na.sub.2 Se/Se, Na.sub.2 Te and Na.sub.2 Te/Te as the electrolyte. The oxidation of (poly) sulfide, (poly)selenide or (poly)telluride species occurs at the irradiated anode, and reduction of polysulfide, polyselenide or polytelluride species occurs at the dark Pt cathode of the photoelectrochemical cell. Optical to electrical energy conversion efficiencies approaching 15% at selected frequencies have been observed in some cells. The wavelength for the onset of photocurrent corresponds to the band gap of the particular anode material used in the cell.

Wrighton, Mark S.↗
NASA NTRS1977

Reflective liquid crystal light valve with hybrid field effect mode

There is disclosed a high performance reflective mode liquid crystal light valve suitable for general image processing and projection and particularly suited for application to real-time coherent optical data processing. A preferred example of the device uses a CdS photoconductor, a CdTe light absorbing layer, a dielectric mirror, and a liquid crystal layer sandwiched between indium-tin-oxide transparent electrodes deposited on optical quality glass flats. The non-coherent light image is directed onto the photoconductor; this reduces the impedance of the photoconductor, thereby switching the AC voltage that is impressed across the electrodes onto the liquid crystal to activate the device. The liquid crystal is operated in a hybrid field effect mode. It utilizes the twisted nematic effect to create a dark off-state (voltage off the liquid crystal) and the optical birefringence effect to create the bright on-state. The liquid crystal thus modulates the polarization of the coherent read-out or projection light responsively to the non-coherent image. An analyzer is used to create an intensity modulated output beam.

Boswell, Donald D.↗
NASA NTRS2009

On Favorable Thermal Fields for Detached Bridgman Growth

The thermal fields of two Bridgman-like configurations, representative of real systems used in prior experiments for the detached growth of CdTe and Ge crystals, are studied. These detailed heat transfer computations are performed using the CrysMAS code and expand upon our previous analyses [14] that posited a new mechanism involving the thermal field and meniscus position to explain stable conditions for dewetted Bridgman growth. Computational results indicate that heat transfer conditions that led to successful detached growth in both of these systems are in accordance with our prior assertion, namely that the prevention of crystal reattachment to the crucible wall requires the avoidance of any undercooling of the melt meniscus during the growth run. Significantly, relatively simple process modifications that promote favorable thermal conditions for detached growth may overcome detrimental factors associated with meniscus shape and crucible wetting. Thus, these ideas may be important to advance the practice of detached growth for many materials.

Stelian, Carmen↗
NASA NTRS2009

Gamma ray detector modules

A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

Capote, M. Albert↗