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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Investigation of nickel-silicon metallization process

The metallization of silicon solar cells passivated with silicon nitride coating was investigated by using commercial Ni pastes #5517 from Thick Film Systems, #7028-5 from Cermalloy, experimental formulation # X-A by Sollos, Inc. and evaporated Ti-Ni film. Comparative and reference tests were done with the Dupont Ag paste #7095 and with a mixture of Ni paste #5517 with Ag paste #7095 in the respective ratio of 9 to 1 by weight. The evaluation criteria for the metallization was the mechanical bond strength of the contact, solderability, copper plating ability and electrical characteristics in terms of Voc, Isc values and shape of the V-I curve. The results revealed that the Dupont Ag paste #7095 mt all required criteria, while the quality of the cells metalized with the commercial Ni paste #5517 from Thick Film Systems, #7028-5 from Cermalloy as well as the experimental paste # X-A from Sollos, Inc. was below the acceptable standards. A significant improvement was obtained with the mixture of Ni paste #5517 from Thick Film Systems with 10% addition of Dupont paste # 7095.

Macha, M.↗
NASA NTRS1994

Fracture Behavior of Ceramics Under Displacement Controlled Loading

A Mode I fracture specimen and loading method has been developed which permits the observation of stable crack extension in monolithic and in situ toughened ceramics. The developed technique was used to conduct room temperature tests on commercial grade alumina (Coors' AD-995) and silicon nitride (Norton NC-132). The results of these tests are reported. Crack growth for the alumina remained subcritical throughout testing revealing possible effects of environmental stress corrosion. The crack growth resistance curve for the alumina is presented. The silicon nitride tests displayed a series of stable (slow) crack growth segments interrupted by dynamic (rapid) crack extension. Crack initiation and arrest stress intensity factors, K(sub Ic) and K(sub Ia), for silicon nitride are reported. The evolution of the specimen design through testing is briefly discussed.

Calomino, Anthony↗
NASA NTRS2004

Current Status of Hybrid Bearing Damage Detection

Advances in material development and processing have led to the introduction of ceramic hybrid bearings for many applications. The introduction of silicon nitride hybrid bearings into the high pressure oxidizer turbopump, on the space shuttle main engine, led NASA to solve a highly persistent and troublesome bearing problem. Hybrid bearings consist of ceramic balls and steel races. The majority of hybrid bearings utilize Si3N4 balls. The aerospace industry is currently studying the use of hybrid bearings and naturally the failure modes of these bearings become an issue in light of the limited data available. In today s turbine engines and helicopter transmissions, the health of the bearings is detected by the properties of the debris found in the lubrication line when damage begins to occur. Current oil debris sensor technology relies on the magnetic properties of the debris to detect damage. Since the ceramic rolling elements of hybrid bearings have no metallic properties, a new sensing system must be developed to indicate the system health if ceramic components are to be safely implemented in aerospace applications. The ceramic oil debris sensor must be capable of detecting ceramic and metallic component damage with sufficient reliability and forewarning to prevent a catastrophic failure. The objective of this research is to provide a background summary on what is currently known about hybrid bearing failure modes and to report preliminary results on the detection of silicon nitride debris, in oil, using a commercial particle counter.

Dempsey, Paula J.↗
NASA NTRS2005

PDSOI and Radiation Effects: An Overview

Bulk silicon substrates are a common characteristic of nearly all commercial, Complementary Metal-Oxide-Semiconductor (CMOS), integrated circuits. These devices operate well on Earth, but are not so well received in the space environment. An alternative to bulk CMOS is the Silicon-On-Insulator (SOI), in which a &electric isolates the device layer from the substrate. SO1 behavior in the space environment has certain inherent advantages over bulk, a primary factor in its long-time appeal to space-flight IC designers. The discussion will investigate the behavior of the Partially-Depleted SO1 (PDSOI) device with respect to some of the more common space radiation effects: Total Ionized Dose (TID), Single-Event Upsets (SEUs), and Single-Event Latchup (SEL). Test and simulation results from the literature, bulk and epitaxial comparisons facilitate reinforcement of PDSOI radiation characteristics.

Forgione, Joshua B.↗
NASA NTRS2008

Disturb testing in flash memories

Non-volatile memory technology as defined by NAND architecture flash memory continues to lead the process scaling and device shrinking efforts of the entire integrated circuit industry. 45- nm technology nodes are now producing commercial 32Gb devices. These latest 32Gb devices are pioneering new charge trapping memory cell technologies using metal gates and high-k dielectric materials. These cells are called TANOS and consist of tantalum-nitride, aluminum oxide (high k material), nitride, oxide, and silicon. Such high-density memories continue to revolutionize commercial electronics in terms of new high-speed data architectures and significant reductions in overall power and weight consumption. In stark contrast, nearly all science-based interplanetary and earth-orbiting NASA spacecraft are still designing in and around mid-1980s-level non-volatile technology with 1Mb Electrically Erasable Read-Only Memory (EEPROM) devices. NASA has typically shunned the use of modern flash devices because of radiation and reliability concerns due to the commercial-offthe– shelf (COTS) nature of the NAND flash technology. Given the significant potential increases in overall system capability these modern flash devices could bring to NASA missions, it is important to continue to investigate these devices. This report will investigate certain portions of the reliability performance of NAND flash devices, specifically the disturb properties. Understanding the possible limitations such new non-volatile memory technology presents to NASA is the goal of this report.

Freie, Michael↗
NASA NTRS1986

Sensitivity analysis for solar plates

Economic evaluation methods and analyses of emerging photovoltaic (PV) technology since 1976 was prepared. This type of analysis was applied to the silicon research portion of the PV Program in order to determine the importance of this research effort in relationship to the successful development of commercial PV systems. All four generic types of PV that use silicon were addressed: crystal ingots grown either by the Czochralski method or an ingot casting method; ribbons pulled directly from molten silicon; an amorphous silicon thin film; and use of high concentration lenses. Three technologies were analyzed: the Union Carbide fluidized bed reactor process, the Hemlock process, and the Union Carbide Komatsu process. The major components of each process were assessed in terms of the costs of capital equipment, labor, materials, and utilities. These assessments were encoded as the probabilities assigned by experts for achieving various cost values or production rates.

Aster, R. W.↗
NASA NTRS1984

Sinterability, strength and oxidation of alpha silicon carbide powders

An investigation is made of pressureless sintering of commercially available alpha-SiC powders at temperatures between 1900 and 2150 C for periods of 10 to 240 min under one atmosphere of argon pressure. It is found that alpha-SiC powder containing boron and carbon sintering aids is sinterable at 2150 C for a period of 30 min to a high final density (greater than 96 percent of theoretical). In alpha-SiC powder containing aluminum and carbon sintering aids, the final density achieved is only about 80 percent of theoretical. Determinations are made of room temperature and high temperature (1370 C) flexure strength and oxidation resistance on sintered high density (more than 96 percent of theoretical) alpha-SiC (boron, carbon) material. It is found that both the strength and the resistance to oxidation are equivalent and comparable to those of the sintered alpha-SiC which represents the state of the art.

Dutta, S.↗
NASA NTRS1991

Crack healing in silicon nitride due to oxidation

The crack healing behavior of a commercial, MgO-containing, hot pressed Si3N4 was studied as a function of temperature in oxidizing and inert annealing environments. Crack healing occurred at a temperature 800 C or higher due to oxidation regardless of crack size, which ranged from 100 microns (indentation crack) to 1.7 mm (SEPB precrack). The resulting strength and apparent fracture toughness increased at crack healing temperature by 100 percent and 300 percent, respectively. The oxide layer present in the crack plane was found to be highly fatigue resistant, indicating that the oxide is not solely silicate glass, but a mixture of glass, enstatite, and/or cristobalite that was insensitive to fatigue in a room temperature water environment.

Choi, Sung R.↗
NASA NTRS1995

A new RF package suitable for aeronautical commercial and DSCS satellite applications

Higher levels of integration through the use of GaAs and silicon MMIC devices, a die-cast housing, and the reduction of the number of subassemblies has enabled a large reduction of the size and weight of the electronics package for commercial and military satellite communications. This paper presents an electronics architecture and hardware that utilizes many new integrated circuits and design techniques, and allows flexibility for future satellite frequency changes and expansion. Key features of the radio are extended C-band, InSat, Defense Satellite Communications System (DSCS), and Ku-band coverage options; 70 (or 140) MHz transponder bandwidth or L-band block bandwidth IFs; integrated RS-232 control through local handheld terminal or remote computer; remote control of crystal reference oscillator for aging and temperature compensation; integrated 2 or 5 watt solid-state power amplifiers (SSPA); optional integrated solid-state booster amplifiers to 40 watts; optional external amplifiers to 100 watts; integral beacon tracking with second integrated downcoverter for antenna positioning; radio, including low-noise block converter (LNB) and SSPA, weighs 8.5 kg and measures 32 x 23 x 16.5 cm; environmentally ruggedized for -40 to +60 C; O-ring sealed for waterproofing; passive (convection) cooling; and simple cabling and installation, with a single cable between radio and LNB, and two cables between radio and IF interface. The small size and light weight of the radio make it ideal for mounting on stabilized antenna platforms (gyroscopic or servo). Several input power options (110 or 220 VAC; +48, +12, or -24 VDC) facilitate operation on multiple platforms.

Hamilton, Robert J., Jr.↗
NASA NTRS1978

Endurance testing of first generation /Block I/ commercial solar cell modules

NASA-LeRC has conducted outdoor endurance tests on modules commercially produced as part of the 46-kW purchase of first generation (Block I) modules by the JPL Low Cost Silicon Solar Array Project. Block I modules from four manufacturers were installed at commercial testing sites in Florida, Puerto Rico, and Arizona and at noncommercial sites in Cleveland, Ohio. The conditions endured by these modules included hot and dry, hot and humid, tropical rain forest, sea-air, urban industrial and urban clean; exposures were for periods up to one year. Test results are presented and discussed.

Anagnostou, E.↗
NASA NTRS2003

Advanced Packaging Technology Used in Fabricating a High-Temperature Silicon Carbide Pressure Sensor

The development of new aircraft engines requires the measurement of pressures in hot areas such as the combustor and the final stages of the compressor. The needs of the aircraft engine industry are not fully met by commercially available high-temperature pressure sensors, which are fabricated using silicon. Kulite Semiconductor Products and the NASA Glenn Research Center have been working together to develop silicon carbide (SiC) pressure sensors for use at high temperatures. At temperatures above 850 F, silicon begins to lose its nearly ideal elastic properties, so the output of a silicon pressure sensor will drift. SiC, however, maintains its nearly ideal mechanical properties to extremely high temperatures. Given a suitable sensor material, a key to the development of a practical high-temperature pressure sensor is the package. A SiC pressure sensor capable of operating at 930 F was fabricated using a newly developed package. The durability of this sensor was demonstrated in an on-engine test. The SiC pressure sensor uses a SiC diaphragm, which is fabricated using deep reactive ion etching. SiC strain gauges on the surface of the diaphragm sense the pressure difference across the diaphragm. Conventionally, the SiC chip is mounted to the package with the strain gauges outward, which exposes the sensitive metal contacts on the chip to the hostile measurement environment. In the new Kulite leadless package, the SiC chip is flipped over so that the metal contacts are protected from oxidation by a hermetic seal around the perimeter of the chip. In the leadless package, a conductive glass provides the electrical connection between the pins of the package and the chip, which eliminates the fragile gold wires used previously. The durability of the leadless SiC pressure sensor was demonstrated when two 930 F sensors were tested in the combustor of a Pratt & Whitney PW4000 series engine. Since the gas temperatures in these locations reach 1200 to 1300 F, the sensors were installed in water-cooled jackets, as shown. This was a severe test because the pressure-sensing chips were exposed to the hot combustion gases. Prior to the installation of the SiC pressure sensors, two high-temperature silicon sensors, installed in the same locations, did not survive a single engine run. The durability of the leadless SiC pressure sensor was demonstrated when both SiC sensors operated properly throughout the two runs that were conducted.

Beheim, Glenn M.↗
NASA NTRS1980

Operational tests of a solar-energy system in Georgia

Seventy three page report describes one year performance of commercial solar-energy hot-water system. Silicone oil is heat-exchange fluid in tested system, designed to meet needs of family of four. Roll-bend heat exchanger is wrapped around hot-water storage tank. Oil circulates through exchanger and flat-plat solar collectors. Auxiliary energy, to maintain temperature in storage tank, is supplied by 4,500-watt resistance-heating element.

Source record↗
NASA NTRS1982

Process research on non-CZ silicon material

High risk, high payoff research areas associated with he process for producing photovoltaic modules using non-CZ sheet material are investigated. All investigations are being performed using dendritic web silicon, but all processes are directly applicable to other ribbon forms of sheet material. The technical feasibility of forming front and back junctions in non-CZ silicon using liquid dopant techniques was determined. Numerous commercially available liquid phosphorus and boron dopant solutions are investigated. Temperature-time profiles to achieve N(+) and P(+) sheet resistivities of 60 + or - 10 and 40 + or - s10 ohms per square centimeter respectively are established. A study of the optimal method of liquid dopant application is performed. The technical feasibility of forming a liquid applied diffusion mask to replace the more costly chemical vapor deposited SiO2 diffusion mask was also determined.

Source record↗
NASA NTRS1986

Development of the silane process for the production of low-cost polysilicon

It was recognized that the traditional hot rod type deposition process for decomposing silane is energy intensive, and a different approach for converting silane to silicon was chosen. A 1200 metric tons/year capacity commercial plant was constructed in Moses Lake, Washington. A fluidized bed processor was chosen as the most promising technology and several encouraging test runs were conducted. This technology continues to be very promising in producing low cost polysilicon. The Union Carbide silane process and the research development on the fluidized bed silane decomposition are discussed.

Iya, S. K.↗
NASA NTRS1986

Increased sensitivity of a vidicon optical multichannel analyzer with a detachable electrostatic image intensifier

A substantial gain in sensitivity is reported through the addition of a commercially available electrostatic image intensifier to a silicon-intensified target vidicon system. This comparatively low cost modification allows cooled or room temperature operation, CW or pulsed detection, and ease of removal or attachment. A 40-mm, first-generation technology image intensifier was used in a configuration in which the photocathode end was at negative high voltage and the phosphor end was at ground. Cooling the vidicon detector did not result in improved SNR; more generally, a 50-fold sensitivity increase was observed for the image intensifier/vidicon system.

Snow, J. B.↗
NASA NTRS2002

Human Motion Tracking and Glove-Based User Interfaces for Virtual Environments in ANVIL

The Army/NASA Virtual Innovations Laboratory (ANVIL) at Marshall Space Flight Center (MSFC) provides an environment where engineers and other personnel can investigate novel applications of computer simulation and Virtual Reality (VR) technologies. Among the many hardware and software resources in ANVIL are several high-performance Silicon Graphics computer systems and a number of commercial software packages, such as Division MockUp by Parametric Technology Corporation (PTC) and Jack by Unigraphics Solutions, Inc. These hardware and software platforms are used in conjunction with various VR peripheral I/O (input / output) devices, CAD (computer aided design) models, etc. to support the objectives of the MSFC Engineering Systems Department/Systems Engineering Support Group (ED42) by studying engineering designs, chiefly from the standpoint of human factors and ergonomics. One of the more time-consuming tasks facing ANVIL personnel involves the testing and evaluation of peripheral I/O devices and the integration of new devices with existing hardware and software platforms. Another important challenge is the development of innovative user interfaces to allow efficient, intuitive interaction between simulation users and the virtual environments they are investigating. As part of his Summer Faculty Fellowship, the author was tasked with verifying the operation of some recently acquired peripheral interface devices and developing new, easy-to-use interfaces that could be used with existing VR hardware and software to better support ANVIL projects.

Joseph D. Dumas, II↗
NASA NTRS2003

Thermoelectric microdevice fabricated by a MEMS-like electrochemical process

Microelectromechanical systems (MEMS) are the basis of many rapidly growing technologies, because they combine miniature sensors and actuators with communications and electronics at low cost. Commercial MEMS fabrication processes are limited to silicon-based materials or two-dimensional structures. Here we show an inexpensive, electrochemical technique to build MEMS-like structures that contain several different metals and semiconductors with three-dimensional bridging structures. We demonstrate this technique by building a working microthermoelectric device. Using repeated exposure and development of multiple photoresist layers, several different metals and thermoelectric materials are fabricated in a three-dimensional structure. A device containing 126 n-type and p-type (Bi, Sb)2Te3 thermoelectric elements, 20 microm tall and 60 microm in diameter with bridging metal interconnects, was fabricated and cooling demonstrated. Such a device should be of technological importance for precise thermal control when operating as a cooler, and for portable power when operating as a micro power generator.

Evaluation Studies↗
NASA NTRS2002

Knowledge of Pest Resistance in SiC/BN/SiC Composites Improved

Ceramic-matrix composites (CMC's) consisting of a silicon carbide matrix reinforced with boron-nitride- (BN-) coated silicon carbide (SiC) fibers are strong contenders for commercial and aerospace applications (in particular, the hot sections of high-performance turbine engines in advanced aircraft and generators). They have very good mechanical properties below approximately 600 C and above approximately 1000 C. Between those temperatures, however, the BN coating oxidizes easily, and the oxidation of the SiC matrix is too sluggish to seal off the composite with a protective layer of silica. In that temperature interval, the preferential oxidation of the BN weakens and embrittles the composite. That phenomenon, referred to as "pest" degradation, is the focus of this work, which aims to identify the causes of and remedies for pesting. Previous work established that pesting in Hi-Nicalon (Nippon Carbon Co., Ltd., Japan)/SiC composites was caused by a layer of free carbon that undermined the oxidation resistance of the BN. New work suggests that composites containing a source of carbon are prone to severe pesting and that those that are free of elemental carbon are resistant pesting. Pest resistance was assessed by exposing machined samples for 100 to 150 hr in an atmospheric burner rig at 600 to 1100 C, followed by a tensile fracture test to measure residual mechanical properties and by characterization of the interphase microstructure. Whether the elemental carbon came from intrinsic or extrinsic sources, its presence induced the tensile strength to drop by over 50 percent in the burner rig, with an even more severe loss of fracture strain. A likely mechanism by which burnoff of the carbon layer exposes the BN to accelerated flank attack by ambient oxidants is shown. The BN is replaced with borosilicates that attack the fiber, and ultimately with silica that embrittles the composites by rigidly bonding components. Thus, the study has shown that pesting can be prevented in SiC/BN/SiC, or at least reduced, by simply excluding free carbon. These studies continue, and plans for future work include investigating the role that carbon may play elsewhere in the interphase region.

Thomas-Ogbuji, Linus U.↗