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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Detection of tanker defects with infrared thermography

Infrared scanning technique for finding defects in secondary barrier of liquid natural gas (LNG) tank has been successfully tested on ship under construction at Newport News Shipbuilding and Dry Dock Company. Technique determines defects with minimal expenditure of time and manpower. Tests could be repeated during life of tanker and make more complicated testing unnecessary. Tests also confirmed that tank did not have any major defects, and tank was certified.

Kantsios, A. G.↗
NASA NTRS1979

Influence of alignment and surface defects on the performance of X-ray telescopes

The effects of misalignment and surface deformations on the image quality of a grazing incidence telescope with six nested subsystems are investigated. The axial rms-spot size serves as a measure for the image quality. The surface deformations are simulated by ellipsoidal and sinusoidal deviations from the ideal surface. Misalignments are tilts, decenters, and despaces of the individual elements. The effects of each type of defect are analyzed in a single two-element system. The full nested system is then analyzed in the presence of all possible defects on all 12 elements, whereby the magnitude of the defects is randomized within a given upper limit.

Korsch, D.↗
NASA NTRS1982

Processed-induced defects in EFG ribbons

The defect structure of processed edge defined film-fed growth (EFG) silicon ribbons was studied using a variety of electron microscopic techniques. Comparison between the present results and previous studies on as-grown ribbons has shown that solar cell processing introduces additional defects into the ribbons. The creation of point defects during high temperature phosphorus diffusion induces dislocation climb, resulting in the formation of dislocation helices in the diffused layer.

Cunningham, B.↗
NASA NTRS1981

Defect design of insulation systems for photovoltaic modules

A defect-design approach to sizing electrical insulation systems for terrestrial photovoltaic modules is presented. It consists of gathering voltage-breakdown statistics on various thicknesses of candidate insulation films where, for a designated voltage, module failure probabilities for enumerated thickness and number-of-layer film combinations are calculated. Cost analysis then selects the most economical insulation system. A manufacturing yield problem is solved to exemplify the technique. Results for unaged Mylar suggest using fewer layers of thicker films. Defect design incorporates effects of flaws in optimal insulation system selection, and obviates choosing a tolerable failure rate, since the optimization process accomplishes that. Exposure to weathering and voltage stress reduces the voltage-withstanding capability of module insulation films. Defect design, applied to aged polyester films, promises to yield reliable, cost-optimal insulation systems.

Mon, G. R.↗
NASA NTRS1982

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗
NASA NTRS1983

Current collection from the space plasma through defects in high voltage solar array insulation

For spacecraft operation in the near Earth environment, solar cell arrays constitute the major source of reliable long term power. Optimization of mass and power efficiency results in a general requirement for high voltage solar arrays. The space plasma environment, though, can result in large currents being collected by exposed solar cells. The solution of a protective covering of transparent insulation is not a complete solution, inasmuch as defects in the insulation result in anomalously large currents being collected through the defects. Tests simulating the electron collection from small defects in an insulation have shown that there are two major collection modes. The first mode involves current enhancement by means of a surface phenomenon involving the surrounding insulator. In the second mode the current collection is enhanced by vaporization and ionization of the insulators materials, in addition to the surface enhancement of the first mode. A model for the electron collection is the surface enhanced collection mode was developed. The model relates the secondary electron emission yield to the electron collection. It correctly predicts the qualitative effects of hole size, sample temperature and roughening of sample surface. The theory was also shown to predict electron collection within a factor of two for the polymers teflon and polyimide.

Stillwell, R. P.↗
NASA NTRS1983

Effects of defects in composite structures

The effect of defects in composite structures is addressed. Defects in laminates such as wrinkles, foreign particles, scratches and breaks are discussed. Effects of plygap plywaviness and machining defects are also studied.

Sendeckyj, G. P.↗
NASA NTRS1981

Detection of strength limiting defects in cellular glasses by dielectric measurements

The foamed glasses that are being considered for structural support in solar thermal energy system silvered glass concentrator mirrors are assessed for strength-limiting defects by a nondestructive technique which measures the capacitance of well defined regions. The feasibility of locating large defects is demonstrated for the case of one type of cellular mass. Observed capacitance variations are believed to be due to small voids or other irregularities in the material. If the defects are equal to or greater than approximately 20 times the glass matrix pore size, they can be resolved with sufficient accuracy to delineate their spatial extent.

Gammell, P. M.↗
NASA NTRS1982

Recognizing defects in carbon-fiber reinforced plastics

The damage tolerance of structures made of carbon-fiber-reinforced plastic is tested under various loads. Test laminate (73/1/1, 24/9/1, 1465 A) specimens of thickness 1.5-3.2 mm with various defects were subjected to static and dynamic loads. Special attention was given to delamination, and ultrasonic C-scans were made on the specimens. It was shown that cracks from even small defects are detected with great accuracy. The same probes were also X rayed; defects that could not be detected under ordinary X rays were bored and studied under vacuum by a contrast technique. The nondestructive ultrasonic and X ray tests were controlled by partially destructive tests, and good agreement was observed.

Schuetze, R.↗
NASA NTRS1985

Oxygen and carbon impurities and related defects in silicon

Oxygen and carbon are the predominant impurities in Czochralski-grown silicon. The incorporation of oxygen and carbon during crystal growth is reviewed and device effects are discussed. Methods for controlling oxygen and carbon incorporation during crystal growth are discussed and results supporting a segregation coefficient of k=0.5 for oxygen are presented. The nucleation and precipitation behavior of oxygen is complex. Temperature and doping level effects which add insight into the role of point defects in the nucleation process are highlighted. In general, precipitation is found to be retarded in N+ and P+ silicon. The types and quantities of defects resulting from the oxygen precipitates is of interest as they are technologically useful in the process called intrinsic gettering. A comparison is made between the available defect sites and the quantities of metallic impurities present in a typical wafer which need to be gettered. Finally, a discussion of the denuded-zone, intrinsic-gettered (DZ-IG) structure on device properties is presented.

Pearce, C. W.↗
NASA NTRS1985

Nonstoichiometric defects in GaAs and the EL2 bandwagon

In the present paper, an attempt is made to formulate a common framework for a discussion of nonstoichiometric defects, especially EL2 and dislocations. An outline is provided of the most important settled and unsettled issues, taking into account not only fundamental interests, but also urgent needs in advancing IC technology. Attention is given to stoichiometry-controlled compensation, the expected role of melt stoichiometry in electrical conductivity for the basic atomic disorders, defect equilibria-dislocations and EL2, and current issues pertaining to the identification of EL2. It is concluded that nonstoichiometric defects play a critical role in the electronic properties of GaAs and its electronic applications. Very significant progress has been recently made in learning how to adjust melt stoichiometry in order to maximize its beneficial effects and minimize its detrimental ones.

Lagowski, J.↗
NASA NTRS1985

Defects in silicon effect on device performance and relationship to crystal growth conditions

A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

Jastrzebski, L.↗
NASA NTRS1986

The influence of defects of the fatigue resistance of butt and girth welds in A106B steel

This three-phase study was directed at developing a fitness for service defect acceptance criteria for welds with defect indications. The study focussed on A106 Gr. B steel pipe. The first phase involved a literature search and critical review to develop the preliminary acceptance criteria to the extent permitted by the data. The second phase developed data for flat plate, wall segment, and vessel specimens containing artificial or natural planar or volumetric defects. The final phase developed acceptance criteria from the test data.

Leis, B. N.↗
NASA NTRS1986

The continuing battle against defects in nickel-base superalloys

In the six decades since the identification of age hardenable nickel-base superalloys their compositions and microstructures have changed markedly. Current alloys are tailored for specific applications. Thus their microstructures are defined for that application. This paper briefly reviews the evolution of superalloy microstructures and comments on the appearance and implications of microstructural defects in high performance superalloys. It is seen that new alloys and proceses have generated new types of defects. Thus as the industry continues to develop new alloys and processes it must remain vigilant toward the identification and control of new types of defects.

Dreshfield, R. L.↗
NASA NTRS1985

Metastability of the midgap level EL 2 in GaAs - Relationship with the As antisite defect

It is found that the rate of the photoinduced transition of the GaAs midgap level EL 2 to its metastable state increases as its occupation increases. High-resolution optical spectra of this transition exhibit a sharp peak very similar to the no-phonon line of the intracenter absorption of the As antisite defect. These findings show that the transition to the metastable state is initiated from the ground state 1A1, and it is finalized via the excited state 1T2 of the neutral As antisite defect. They thus provide a new basis for the critical assessment of the EL 2 metastability models and further confirmation of the association of EL 2 with the isolated As antisite defect.

Skowronski, M.↗
NASA NTRS1986

A point defect model for nickel electrode structures

The Raman spectra for nickel electrode active mass indicate a single formula-unit crystallographic unit cell of the layered NiOOH-type. Empirical stoichiometric formulas require that extensive point defects, cation dopants and nickel vacancies, be incorporated on nickel sites. Structural differences between the alpha/gamma and beta/beta cycles, and the influence of cobalt addition on the structure will be discussed in terms of the point defect model. Other empirical data supporting the point defect model will be considered.

Loyselle, Patricia L.↗
NASA NTRS1990

Topological defects in extended inflation

The production of topological defects, especially cosmic strings, in extended inflation models was considered. In extended inflation, the Universe passes through a first-order phase transition via bubble percolation, which naturally allows defects to form at the end of inflation. The correlation length, which determines the number density of the defects, is related to the mean size of bubbles when they collide. This mechanism allows a natural combination of inflation and large scale structure via cosmic strings.

Copeland, Edmund J.↗
NASA NTRS1992

Templates Aid Removal Of Defects From Castings

Templates used to correlate defects in castings with local wall thicknesses. Placed on part to be inspected after coated with penetrant dye. Positions of colored spots (indicative of defects) noted. Ultrasonic inspector measures thickness of wall at unacceptable defects only - overall inspection not necessary.

Hendrickson, Robert G.↗