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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Nanoscale pressure sensors realized from suspended graphene membrane devices

We study the transport properties of graphene layers placed over ∼200 nm triangular holes via attached electrodes under applied pressure. We find that the injected current division between counter electrodes depends on pressure and can be used to realize a nanoscale pressure sensor. Estimating various potential contributions to the resistivity change of the deflected graphene membrane including piezoresistivity, changing gate capacitance, and the valley Hall effect due to the pressure-induced synthetic magnetic field, we find that the valley Hall effect yields the largest expected contribution to the longitudinal resistivity modulation for accessible device parameters. Such devices in the ballistic transport regime may enable the realization of tunable valley polarized electron sources.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Development of core ion temperature gradients and edge sheared flows in a helicon plasma device investigated by laser induced fluorescence measurements

We report experimental observation of ion heating and subsequent development of a prominent ion temperature gradient in the core of a linear magnetized plasma device, and the controlled shear de-correlation experiment. Simultaneously, we also observe the development of strong sheared flows at the edge of the device. Both the ion temperature and the azimuthal velocity profiles are quite flat at low magnetic fields. As the magnetic field is increased, the core ion temperature increases, producing centrally peaked ion temperature profiles and therefore strong radial gradients in the ion temperature. Similarly, we observe the development of large azimuthal flows at the edge, with increasing magnetic field, leading to strong radially sheared plasma flows. The ion velocities and temperatures are derived from laser induced fluorescence measurements of Doppler resolved velocity distribution functions of argon ions. These features are consistent with the previous observations of simultaneously existing radially separated multiple plasma instabilities that exhibit complex plasma dynamics in a very simple plasma system. The ion temperature gradients in the core and the radially sheared azimuthal velocities at the edge point to mechanisms that can drive the multiple plasma instabilities, that were reported earlier.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Parallel Reconstruction of Three Dimensional Magnetohydrodynamic Equilibria in Plasma Confinement Devices

Fast, accurate three dimensional reconstructions of plasma equilibria, crucial for physics interpretation of fusion data generated within confinement devices like stellarators/ tokamaks, are computationally very expensive and routinely require days, even weeks, to complete using serial approaches. Here, we present a parallel implementation of the three dimensional plasma reconstruction code, V3FIT. A formal analysis to identify the performance bottlenecks and scalability limits of this new parallel implementation, which combines both task and data parallelism, is presented. The theoretical findings are supported by empirical performance results on several thousands of processor cores of a Cray XC30 supercomputer. Parallel V3FIT is shown to deliver over 40X speedup, enabling fusion scientists to carry out three dimensional plasma equilibrium reconstructions at unprecedented scales in only a few hours (instead of in days/weeks) for the first time.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Modeling DNP3 Traffic Characteristics of Field Devices in SCADA Systems of the Smart Grid

In the generation, transmission, and distribution sectors of the smart grid, intelligence of field devices is realized by programmable logic controllers (PLCs). Many smart-grid subsystems are essentially cyber-physical energy systems (CPES): For instance, the power system process (i.e., the physical part) within a substation is monitored and controlled by a SCADA network with hosts running miscellaneous applications (i.e., the cyber part). To study the interactions between the cyber and physical components of a CPES, several co-simulation platforms have been proposed. However, the network simulators/emulators of these platforms do not include a detailed traffic model that takes into account the impacts of the execution model of PLCs on traffic characteristics. As a result, network traces generated by co-simulation only reveal the impacts of the physical process on the contents of the traffic generated by SCADA hosts, whereas the distinction between PLCs and computing nodes (e.g., a hardened computer running a process visualization application) has been overlooked. To generate realistic network traces using co-simulation for the design and evaluation of applications relying on accurate traffic profiles, it is necessary to establish a traffic model for PLCs. In this work, we propose a parameterized model for PLCs that can be incorporated into existing co-simulation platforms. We focus on the DNP3 subsystem of slave PLCs, which automates the processing of packets from the DNP3 master. To validate our approach, we extract model parameters from both the configuration and network traces of real PLCs. Simulated network traces are generated and compared against those from PLCs. Our evaluation shows that our proposed model captures the essential traffic characteristics of DNP3 slave PLCs, which can be used to extend existing co-simulation platforms and gain further insights into the behaviors of CPES.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2021

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗
DOE OSTI2023

A Novel Spatial-Temporal Variational Quantum Circuit to Enable Deep Learning on NISQ Devices

Quantum computing presents a promising approach for machine learning with its capability for extremely parallel computation in high-dimension through superposition and entanglement. Despite its potential, existing quantum learning algorithms, such as Variational Quantum Circuits (VQCs), face challenges in handling more complex datasets, particularly those that are not linearly separable. What’s more, it encounters the deployability issue, making the learning models suffer a drastic accuracy drop after deploying them to the actual quantum devices. To overcome these limitations, this paper proposes a novel spatial-temporal design, namely “ST-VQC”, to integrate nonlinearity in quantum learning and improve the robustness of the learning model to noise. Specifically, ST-VQC can extract spatial features via a novel block-based encoding quantum sub-circuit coupled with a layer-wise computation quantum sub-circuit to enable temporal-wise deep learning. Additionally, a SWAP-Free physical circuit design is devised to improve robustness. These designs bring a number of hyperparameters. After a systematic analysis of the design space for each design component, an automated optimization framework is proposed to generate the ST-VQC quantum circuit. The proposed ST-VQC has been evaluated on two IBM quantum processors, ibm-cairo with 27 qubits and ibmq-lima with 7 qubits to assess its effectiveness. The results of the evaluation on the standard dataset for binary classification show that ST-VQC can achieve over 30% accuracy improvement compared with existing VQCs on actual quantum computers. Moreover, on a non-linear synthetic dataset, the STVQC outperforms a linear classifier by 27.9%, while the linear classifier using classical computing outperforms the existing VQC by 15.58%.

Li, Jinyang↗
DOE OSTI2017

Analysis of Multilayer Devices for Superconducting Electronics by High-Resolution Scanning Transmission Electron Microscopy and Energy Dispersive Spectroscopy

We used a focused ion beam to obtain cross-sectional specimens from both magnetic multilayer and Nb/Al-AlOx/Nb Josephson junction devices for characterization by scanning transmission electron microscopy (STEM) and energy dispersive X-ray spectroscopy (EDX). An automated multivariate statistical analysis of the EDX spectral images produced chemically unique component images of individual layers within the multilayer structures. STEM imaging elucidated distinct variations in film morphology, interface quality, and/or etch artifacts that could be correlated to magnetic and/or electrical properties measured on the same devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Investigation of interfacial impurities in m-plane GaN regrown p-n junctions for high-power vertical electronic devices

GaN is an attractive material for high-power electronics due to its wide bandgap and large breakdown field. Verticalgeometry devices are of interest due to their high blocking voltage and small form factor. One challenge for realizing complex vertical devices is the regrowth of low-leakage-current p-n junctions within selectively defined regions of the wafer. Presently, regrown p-n junctions exhibit higher leakage current than continuously grown p-n junctions, possibly due to impurity incorporation at the regrowth interfaces, which consist of c-plane and non-basal planes. Here, we study the interfacial impurity incorporation induced by various growth interruptions and regrowth conditions on m-plane p-n junctions on free-standing GaN substrates. The following interruption types were investigated: (1) sample in the main MOCVD chamber for 10 min, (2) sample in the MOCVD load lock for 10 min, (3) sample outside the MOCVD for 10 min, and (4) sample outside the MOCVD for one week. Regrowth after the interruptions was performed on two different samples under n-GaN and p-GaN growth conditions, respectively. Secondary ion mass spectrometry (SIMS) analysis indicated interfacial silicon spikes with concentrations ranging from 5e16 cm -3 to 2e18 cm -3 for the n-GaN growth conditions and 2e16 cm -3 to 5e18 cm-3 for the p-GaN growth conditions. Oxygen spikes with concentrations ~1e17 cm -3 were observed at the regrowth interfaces. Carbon impurity levels did not spike at the regrowth interfaces under either set of growth conditions. We have correlated the effects of these interfacial impurities with the reverse leakage current and breakdown voltage of regrown m-plane p-n junctions.

42 ENGINEERING↗
DOE OSTI2017

Liquefied gas electrolytes for electrochemical energy storage devices

Electrochemical capacitors and lithium-ion batteries have seen little change in their electrolyte chemistry since their commercialization, which has limited improvements in device performance. Combining superior physical and chemical properties and a high dielectric-fluidity factor, the use of electrolytes based on solvent systems that exclusively use components that are typically gaseous under standard conditions show a wide potential window of stability and excellent performance over an extended temperature range. Electrochemical capacitors using difluoromethane show outstanding performance from –78° to +65°C, with an increased operation voltage. The use of fluoromethane shows a high coulombic efficiency of ~97% for cycling lithium metal anodes, together with good cyclability of a 4-volt lithium cobalt oxide cathode and operation as low as –60°C, with excellent capacity retention.

Science & Technology - Other Topics↗
DOE OSTI2016

Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices

“Ultra” wide-bandgap semiconductors are an emerging class of materials with bandgaps greater than that of gallium nitride (EG > 3.4 eV) that may ultimately benefit a wide range of applications, including switching power conversion, pulsed power, RF electronics, UV optoelectronics, and quantum information. This paper describes the progress made to date at Sandia National Laboratories to develop one of these materials, aluminum gallium nitride, targeted toward high-power devices. The advantageous material properties of AlGaN are reviewed, questions concerning epitaxial growth and defect physics are covered, and the processing and performance of vertical- and lateral-geometry devices are described. The paper concludes with an assessment of the outlook for AlGaN, including outstanding research opportunities and a brief discussion of other potential applications.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A Modular and Flexible High-Frequency-Link Transformer with a Reduced Device Count and Zero High-Side Devices

In general, large power transformers (LPTs) are not interchangeable with each other and their high costs prohibit extensive spare inventories more so considering that on an average only 1.3 LPTs are manufactured for individual design. The latter pose a further challenge since given that the several existing LPTs are reaching their end of service lives, loss of plurality of such LPTs, that form the backbone of U.S. power grid, will clearly run into the problem of energy security related to the non-availability of sufficient spares (and extended lead time) exacerbated further by the fact that these spares are not interchangeable for installations at different locations. Conventional LPT cost millions of dollars and weighs significantly between approximately 100 and 400 tons. Two raw materials—copper and electrical steel—account for over 50 percent of the total cost of an LPT. In recent years, the price volatility of these two commodities in the global market has affected the manufacturing conditions and procurement strategy for LPTs. Transportation is also an important element of the total LPT cost, because an LPT can weigh significantly and often requires long-distance transport. Transporting an LPT is challenging—its large dimensions and heavy weight pose unique requirements to ensure safe and efficient transportation. Current road, rail, and port conditions are such that transportation is taking more time and becoming more expensive. Conventional low-frequency LPTs typically follow a monolithic approach to design due to historical reasons that need to transition to more modular and flexible (e.g., in voltage, impedance, and power flow) designs with ability to seamlessly/near-seamlessly scale. They should also have the ability to incorporate new technologies without in all cases redoing a LPT design from scratch. Given that the cost of raw materials has continued to increase, next-generation LPTs need to pursue avenues for reducing these costs. An added necessity is to reduce the transportability cost, which is significant in conventional LPTs. Further, given that LPTs are for the long term, they need to be durable, efficient, and fault tolerant with overloading capability. Given this backdrop, the objective and accomplishment of this one-year DOE (SPONSOR) R&D project, led by small business NextWatt LLC (PRIME, Lead PI: Dr. Sudip K. Mazumder) and University of Arkansas at Fayetteville (SUBAWARDEE, PI: Dr. Juan Balda) were to explore the design of a (8 – 20 kHz) high-frequency-link (HFL) based 100-MVA LPT with nominal voltage of 115/69 kV, with $15 - $22 dollars US per kVA when manufactured in “moderate” volume, with 99% energy-conversion efficiency, with 300% reduction in both volume and weight compared to a conventional LPT with the same electrical ratings, with impedance variation greater than 5%, with direct AC/AC power conversion capability, with very-high energy-conversion efficiency (using wide-bandgap SiC based field effect MOSFET devices) over a wide operating temperature, with reduction in both volume and weight with regard to conventional low frequency LPT, and with significant reduction in number of devices compared to state of the art solid state transformer topology.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS1933

Wind tunnel research comparing lateral control devices, particularly at high angles of attack X : various control devices on a wing with a fixed auxiliary airfoil

Results are given of a series of systemic tests comparing lateral control devices with particular reference to their effectiveness at high angles of attack. These tests were made with two sizes of ordinary ailerons and different sizes of spoilers on a Clark Y wing model having a narrow auxiliary airfoil fixed ahead and above the leading edge, the chords of the main and auxiliary airfoils being parallel. In addition, the auxiliary airfoil itself was given angular deflection. The purpose was to provide rolling moments for lateral control. The tests were made in a 7 by 10 foot wind tunnel. They included both force and rotation tests to show the effect of the devices on the lift and drag characteristics of the wing and on the lateral stability characteristics, as well as lateral control. They showed that none of the aileron arrangements tried would give rolling control of an assumed satisfactory value at all angles of attack up to the stall. However, they would give satisfactory values, but at the expense of abnormally high deflections and very heavy hinge moments. The most effective combination of ailerons and spoilers gave satisfactory values of rolling moment at angles of attack below the stall, and the values did not fall off as rapidly above the stall as with ailerons alone. With an arrangement of this type having the proper relative proportions and linkage, it should be possible to obtain reasonably satisfactory yawing moments and control forces. Deflecting one-half of the auxiliary airfoil downward for the purpose of control gave strong favorable yawing moments at all angles of attack, but gave very small rolling moments at the low angles of attack.

Weick, Fred E↗
NASA NTRS2004

Measurement of Device Parameters Using Image Recovery Techniques in Large-Scale IC Devices

Devices that respond to radiation on a cell level will produce histograms showing the relative frequency of cell damage as a function of damage. The measured distribution is the convolution of distributions from radiation responses, measurement noise, and manufacturing parameters. A method of extracting device characteristics and parameters from measured distributions via mathematical and image subtraction techniques is described.

radiation↗
NASA NTRS2012

Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices

Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures.

Akturk, Akin↗