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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

High-resolution high-throughput spatiotemporal strain imaging reveals loss mechanisms in a surface acoustic wave device

Surface acoustic wave devices are key components for processing radio frequency signals in wireless communication because these devices offer simultaneously high performance, compact size and low cost. The optimization of the device structure requires a quantitative understanding of energy conversion and loss mechanisms. Here we use stroboscopic full-field diffraction x-ray microscopy to reveal an unanticipated acoustic loss in a prototypical one-port resonator device. A non-uniform acoustic excitation in the active area was responsible for the substantial end and side leakages observed at the design frequency. Quantitative analysis of the strain amplitude using a wave decomposition method allowed the determination of several key device parameters. This high-resolution high-throughput spatiotemporal strain imaging technique is more generally applicable to the study of dynamic strain modulation in nanoscale acoustic, electronic, optical and quantum devices. The high sensitivity allows precise measurement of the strain modulation with picometer-scale amplitude.

Zhou, Tao [ESRF - The European Synchrotron, Grenob↗
DOE OSTI2025

Integration of multiple coinflip devices for high-quality random sampling

Artificial intelligence, scientific computing, and probabilistic computing use random sampling to approximate solutions to various problems, with larger models requiring a substantial quantity of random numbers. To generate the required vast quantity of random numbers at high rates, we explore so-called “coinflip” devices, which are stochastic microelectronic devices ideally capable of independently generating random bits with a tunable weight at a high rate. However, coinflip devices are inherently analog and demonstrate nonidealities, like temperature dependence and drift, that can introduce determinism into the outputs. We present important considerations for building systems of multiple coinflip devices to produce high-quality bitstreams with low error and little dependency on previous bits. Using tunnel diodes as coinflip devices, we implement a control loop to adapt to temperature dependence and generate fair bitstreams with each device. While this can lead to dependencies between bits in a single bitstream, we demonstrate that combining results generated in parallel with individual tunnel diodes can produce fair and unpredictable bitstreams. The suitability of these bitstreams for use in probabilistic computing is then demonstrated through a Monte Carlo approximation of π.

Taylor, Brady Garland [Sandia National Laboratorie↗
DOE OSTI2024

Countering Weapons of Mass Destruction Office (CWMD) Data Categorization Study: Chemical, Biological, Radiological, and Nuclear (CBRN) Detection Device Data

Pacific Northwest National Laboratory (PNNL) seeks to address critical questions related to chemical, biological, radiological, and nuclear (CBRN) detection devices. This research aims to enhance the security and understanding of these devices by investigating various aspects of their identification, communication, and functionality. The primary focus is on network security, malware detection, device identification, and intelligence gathering. CBRN data can be categorized in various ways depending on the purpose of CBRN detection devices and the specific context of the applications for analysis. Criteria that can be used to assist in this effort include but are not limited to data type, data protocol, source/destination, application, time, security, and content. This study will inform additional paths for data classification, data profiling, data mapping, and data modeling. This will help the Countering Weapons of Mass Destruction Office (CWMD) better understand their data and make informed decisions based on the insights gained from this study and their application. The CBRN Data Categorization study will include the identification of 5–10 different CBRN detection devices with unique characteristics for assessing and analyzing the data that is being produced by and transmitted from these devices.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗
DOE OSTI2025

Heavy-Duty Hydrogen Station Equipment Performance Device (HD HyStEP) Specifications and Design Considerations

The original Hydrogen Station Equipment Performance (HyStEP) device was commissioned in 2015 and was critical for the rapid validation of light-duty (LD) hydrogen fueling stations. As applications for hydrogen as a heavy-duty (HD) transportation fuel continue to grow, new heavy-duty stations are being developed to fuel these vehicles that require larger onboard storage tank systems to meet HD transportation demands and drive cycles. The differences in size and geometry from LD vehicles have driven the creation of new hydrogen fueling protocols that will enable safe and economical fueling of HD vehicles. With the new requirements that are set out in HD fueling protocols like SAE J601-5, a new HyStEP-like device is needed to evaluate the capabilities of high-flow hydrogen stations to fuel HD vehicles to the new protocol standard. To create a heavy-duty HyStEP (HD HyStEP) device, an effort has been undertaken to evaluate the requirements that would form the basis for the design of a successful HD HyStEP device. The primary design goal of this HD HyStEP device is its capability of following a test methodology similar to what is outlined in CSA HGV 4.3, which guides the validation of LD fueling dispensers but with adjustments to verify adherence to the HD fueling protocols (SAE J2601-5) for 70 MPa and 35 MPa pressure class vehicles rather than the LD fueling protocols (SAE J2601). The design presented here aims to provide information that enables the creation of an HD HyStEP device that achieves the primary design goal while being informed by the years of experience from the current HyStEP operators.

08 HYDROGEN↗
NASA NTRS1982

Electrical properties of multi p-n junction devices

The electrical properties of multi p-n junction devices are analyzed. It is found that this type of device possesses bistable characteristics similar to that of a Shockley diode and thus provides an alternative realization of devices for switching applications. The inherently greater current gains involved in the operations of such a device yield in principle higher breakover voltages and higher holding currents. Furthermore, the incorporation of heterostructures in this device introduces a new degree of freedom in tailoring their switching characteristics. Multi p-n heterojunction devices operating as SCR lasers were fabricated, and the experimental results are presented.

Katz, J.↗
NASA NTRS1983

Crystal growth of device quality GaAs in space

GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

Gatos, H. C.↗
NASA NTRS1986

Device research task (processing and high-efficiency solar cells)

This task has been expanded since the last 25th Project Integration Meeting (PIM) to include process research in addition to device research. The objective of this task is to assist the Flat-plate Solar Array (FSA) Project in meeting its near- and long-term goals by identifying and implementing research in the areas of device physics, device structures, measurement techniques, material-device interactions, and cell processing. The research efforts of this task are described and reflect the deversity of device research being conducted. All of the contracts being reported are either completed or near completion and culminate the device research efforts of the FSA Project. Optimazation methods and silicon solar cell numerical models, carrier transport and recombination parameters in heavily doped silicon, development and analysis of silicon solar cells of near 20% efficiency, and SiN sub x passivation of silicon surfaces are discussed.

Source record↗
NASA NTRS1984

Analytic investigation of helicopter rotor blade appended aeroelastic devices

Analytic evaluations of four different passive aeroelastic devices appended to helicopter rotor blades are presented. The devices consist of a passive tuned tab, a control coupled tab, an all-flying tip and a harmonic dilational airfoil tip. Each device was conceived for improving either aerodynamic performance or reducing vibratory control loads or hub shears. The evaluation was performed using a comprehensive rotor aeroelastic analysis (the G400PA code with appropriate modifications), together with data for a realistic helicopter rotor blade (the UH-60A Blackhawk), in high speed flight (90 m/s, 175 kts). The results of this study show that significant performance (L/(D sub e)) gains can be achieved with the all-flying free tip. Results from the harmonic dilational airfoil tip show the potential for moderate improvements in L/(D sub e). Finally, the results for the passive tuned tab and the control coupled tab, as configured for this study, show these devices to be impractical. Sections are included which describe the operation of each device, the required G400PA modifications, and the detailed results obtained for each device.

Bielawa, Richard L.↗
NASA NTRS1987

Pressure field due to drag reducing outer layer devices in turbulent boundary layers

The wall static pressure in the vicinity of drag reducing outer layer devices in flat wall turbulent boundary layers has been measured and compared with an inviscid theory. Symmetric and cambered airfoil devices have been examined at small angles of attack and very low chord Reynolds numbers. Airfoil devices impose a sequence of strong favorable and adverse pressure gradients on the boundary layer whose drag is to be reduced. At very small angles of attack (+ or - 2 deg), this pressure field extends up to about three chord lengths downstream of the trailing edge of an airfoil device. Also examined are the pressures on the upper and lower surfaces of a symmetric airfoil device in the freestream and near the wall. The freestream pressure distribution around an airfoil section is altered by the wall proximity. The relevance of lift enhancement caused by wall proximity to drag reduction has been discussed. The pressure distributions on the flat wall beneath the symmetric airfoil devices are predicted well by the inviscid theory. However, the remaining pressure distributions are predicted only qualitatively, presumably because of strong viscous effects.

Bandyopadhyay, P. R.↗
NASA NTRS1988

Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.

Mehdi, I.↗
NASA NTRS1989

Computer analysis of the negative differential resistance switching phenomenon of double-injection devices

By directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a great differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no big improvement in the fate of DI devices is expected in the near future.

Shieh, Tsay-Jiu↗
NASA NTRS1990

Experimental investigation of a new device to control the asymmetric flowfield on forebodies at large angles of attack

An exploratory experimental investigation of a new device to control the asymmetric flowfield on forebodies at large angles of attack has been conducted. The device is a rotatable forebody tip, which varies in cross section from circular at its base to elliptic at its tip. The device itself extends over a small portion of the aircraft or missile forebody. The device provides two important improvements. First, it replaced the normally random behavior of the nose side force as a function of nose tip orientation with a predictable and generally sinusoidal distribution and, second, the device showed promise for use as part of a vehicle control system, to be deflected in a prescribed manner to provide additional directional control for the vehicle. The device was tested on a cone/cylinder model having a 10 deg semiapex angle and on a 3.0 caliber tangent ogive model, each with a base diameter of 3.5 in, for angles of attack from 30 to 60 deg. Data were taken from 3 circumferential rows of pressure taps on each model at a Reynolds number of 84,000 based on cylinder diameter and by a helium-bubble flow visualization technique at a Reynolds number of 24,000.

Moskovitz, Cary A.↗
NASA NTRS1990

Liquid acquisition devices for superfluid helium transfer

To transfer superfluid helium (He II) in the milli-g or micro-g environment in orbit, it is necessary to provide a reasonably steady supply of liquid to the inlet of the pump in the supply dewar. To accomplish this without providing an artificial gravity through acceleration requires a liquid acquisition device. Fluid swirl and electrostatic devices have been proposed to orientate the fluid. However, the simplest mechanisms appear to be the use of surface tension or the thermomechanical effect. This paper examines four concepts for providing He II to the inlet of a thermomechanical pump. The devices are a distributed thermomechanical pump, a distributed pump with a main thermomechanical pump, a screened channel system and a vane/sponge combination. Calculations on the efficiency of these types of liquid acquisition devices are made using laboratory data from tests involving small scale devices where applicable. These calculations show that the latter two types of liquid acquisition devices are the most efficient. Questions as to the probability of cavitation and the effect of the residual shuttle acceleration on their operation remain to be answered, however.

Dipirro, M. J.↗
NASA NTRS1990

Single event induced transients in I/O devices - A characterization

The results of single-event upset (SEU) testing performed to evaluate the parametric transients, i.e., amplitude and duration, in several I/O devices, and the impact of these transients are discussed. The failure rate of these devices is dependent on the susceptibility of interconnected devices to the resulting transient change in the output of the I/O device. This failure rate, which is a function of the susceptibility of the interconnected device as well as the SEU response of the I/O device itself, may be significantly different from an upset rate calculated without taking these factors into account. The impact at the system level is discussed by way of an example.

Newberry, D. M.↗
NASA NTRS1991

YBa2Cu3O(7-x)/Au/Nb device structures

Fabrication and testing of planar and edge geometry YBaCuO/Au/Nb superconductor/normal-metal/superconductor (SNS) device structures is described. Weak-link devices of this type serve as sensitive probes of the electrical quality of the YBaCuO/Au interface. The devices are fabricated using laser-ablated, in situ, c-axis-oriented YBaCuO thin films, with both annealed and unannealed YBaCuO/Au interfaces. The planar SNS structures are formed by sequential, in situ deposition of YBaCuO, Au, and Nb, followed by etching, planarization, and wiring electrode definition to produce junctions ranging from 5 to 20 micron on a side. Resulting RnA products are 1-10 x 10 to the -8th ohm-sq cm with critical current densities up to 5 kA/sq cm. For the edge geometry devices, the YBaCuO film edges are patterned using Ar ion milling, followed by a low energy ion cleaning step and in situ deposition of Au and Nb. Devices with areas in the 10 to the -7th to 10 to the -8th sq cm range have been fabricated with RnA products lower than 10 to the -8th ohm-sq cm and critical current densities up to 3kA/sq cm. Both types of devices show ac Josephson steps under microwave irradiation. The best results have been obtained with annealed YBaCuO/Au interfaces.

Hunt, B. D.↗
NASA NTRS1991

Technique for calibrating angular measurement devices when calibration standards are unavailable

A calibration technique is proposed that will allow the calibration of certain angular measurement devices without requiring the use of absolute standard. The technique assumes that the device to be calibrated has deterministic bias errors. A comparison device must be available that meets the same requirements. The two devices are compared; one device is then rotated with respect to the other, and a second comparison is performed. If the data are reduced using the described technique, the individual errors of the two devices can be determined.

Finley, Tom D.↗
NASA NTRS1991

The Application of a Cylindrical-spherical Floating Ring Bearing as a Device to Control Stability of Turbogenerators

The development of a new device to control stability of turbogenerators is described. The device comprises a floating ring installed between the journal and bearing housing of a fluid film bearing. The journal and the inner surface of the ring are cylindrical while the outer surface of the ring and bearing surface are spherical providing axial location of the ring and self-alignment of the bearing. The employment of this device would lead to a consistent machine performance. System stability may be controlled by changing a number of bearing and floating ring parameters. This device also offers an additional advantage of having a very low frictional characteristic. A feasibility study was carried out to investigate the suitability of the new device to turbogenerator applications. Both theoretical analysis and experimental observations were carried out. Initial results suggest that the new floating ring device is a competitive alternative to other conventional arrangements.

Leung, P. S.↗
NASA NTRS1992

Microwave properties of peeled HEMT devices sapphire substrates

The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.

Young, Paul G.↗