Destructive breakdown in thin films of SiO, MgF sub 2, CaF sub 2, CeF sub 3, CeO sub 2, and Teflon.
Prebreakdown and breakdown electrical properties of thin film capacitors with certain oxides, fluorides and Teflon dielectrics
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Prebreakdown and breakdown electrical properties of thin film capacitors with certain oxides, fluorides and Teflon dielectrics
The Galileo spacecraft which will orbit Jupiter in 1988 will encounter a very harsh environment of energetic electrons. These electrons will have sufficient energy to penetrate the spacecraft shielding, consequently depositing charges in the dielectric insulating materials or ungrounded conductors. The resulting electric field could exceed the breakdown strength of the insulating materials, producing discharges. The transients produced from these Internal Electrostatic Discharges (IESD) could, depending on their relative location, be coupled to nearby cables and circuits. These transients could change the state of logic circuits or degrade or even damage spacecraft components, consequently disrupting the operation of subsystems and systems of the Galileo spacecraft during its expected mission life. An extensive testing program was initiated for the purpose of understanding the potential threats associated with these IESD events. Data obtained from these tests were used to define design guidelines.
This paper presents measurements of the electromagnetic radiation pulses and the replacement current pulses which result from the breakdown of Mylar and Kapton samples. The observed dependence of the characteristics of the replacement current pulse as a function of electron beam energy is discussed. The characteristics of the electromagnetic radiation pulses are also analyzed in the text of this paper. The source of the irradiating electrons is a monoenergetic electron beam whose energy was varied from 12.5 KeV to 25 KeV.
Non-brittle dielectric films are formed by blending a cyanoresin such as cyanoethyl, hydroxyethyl cellulose (CRE) with a compatible, more crystalline resin such as cellulose triacetate. The electrical breakdown strength of the blend is increased by orienting the films by uniaxial or biaxial stretching. Blends of high molecular weight CRE with high molecular weight cyanoethyl cellulose (CRC) provide films with high dielectric constants.
Non brittle dielectric films are formed by blending a cyanoresin such as cyanoethyl, hydroxyethyl cellulose (CRE) with a compatible, more crystalline resin such as cellulose triacetate. The electrical breakdown strength of the blend is increased by orienting the films by uniaxial or biaxial stretching. Blends of high molecular weight CRE with high molecular weight cyanoethyl cellulose (CRC) provide films with high dielectric constants.
The irradiation encountered in space environments causes high insulation materials to discharge, either through electrical breakdown or surface voltage effect mechanisms. Attention is presently given to polymers which, serving as 'leaky' insulators, avoid this problem by means of conduction mechanisms that are acceptable in space applications. The class of conductive polymers encompasses polyvinylcarbazole, polyacrylonitrile, Kapton, and polythiazil. A testing procedure useful in the qualification of such polymers is outlined.
Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.
Very thin films of cellulose triacetate are cast from a solution containing a small amount of high boiling temperature, non-solvent which evaporates last and lifts the film from the casting surface. Stretched, oriented, crystallized films have high electrical breakdown properties. Metallized films less than about 2 microns in thickness form self-healing electrodes for high energy density, pulsed power capacitors. Thicker films can be utilized as a dielectric for a capacitor.
Emission of high-current electron beams that was proposed for some Spacelab payloads required substantial return currents to the orbiter skin in order to neutralize the beam charge. Since the outer skin of the vehicle was covered with approximately 1200 sq m of thermal insulation which has the dielectric quality of air and an electrical conductivity that was estimated by NASA at 10 to the -9 power to 10 to the -10 power mhos/m, considerable transient charging and local potential differences were anticipated across the insulation. The theory for induced charging of spacecraft due to operation of electron guns was only developed for spherical metal vehicles and constant emission currents, which were not directly applicable to the orbiter situation. Field-aligned collection of electron return current from the ambient ionosphere at orbiter altitudes provides up to approximately 150 mA on the conducting surfaces and approximately 2.4 A on the dielectric thermal insulation. Local ionization of the neutral atmosphere by energetic electron bombardment or electrical breakdown may provide somewhat more return current.
Deep dielectric charging and subsequent electrostatic discharge in composite materials used on spacecraft have become greater concerns since composite materials are being used more extensively as main structural components. Deep dielectric charging occurs when high energy particles penetrate and deposit themselves in the insulating material of spacecraft components. These deposited particles induce an electric field in the material, which causes the particles to move and thus changes the electric field. The electric field continues to change until a steady state is reached between the incoming particles from the space environment and the particles moving away due to the electric field. An electrostatic discharge occurs when the electric field is greater than the dielectric strength of the composite material. The goal of the current investigation is to investigate deep dielectric charging in composite materials and ascertain what modifications have to be made to the composite properties to alleviate any breakdown issues. A 1-D model was created. The space environment, which is calculated using the Environmental Workbench software, the composite material properties, and the electric field and voltage boundary conditions are input into the model. The output from the model is the charge density, electric field, and voltage distributions as functions of the depth into the material and time. Analysis using the model show that there should be no deep dielectric charging problem with conductive composites such as carbon fiber/epoxy. With insulating materials such as glass fiber/epoxy, Kevlar, and polymers, there is also no concern of deep dielectric charging problems with average day-to-day particle fluxes. However, problems can arise during geomagnetic substorms and solar particle events where particle flux levels increase by several orders of magnitude, and thus increase the electric field in the material by several orders of magnitude. Therefore, the second part of this investigation was an experimental attempt to measure the continuum electrical properties of a carbon fiber/epoxy composite, and to create a composite with tailorable conductivity without affecting its mechanical properties. The measurement of the conductivity and dielectric strength of carbon fiber/epoxy composites showed that these properties are surface layer dominated and difficult to measure. In the second experimental task, the conductivity of a glass fiber/epoxy composite was increased by 3 orders of magnitude, dielectric constant was increased approximately by a factor of 16, with minimal change to the mechanical properties, by adding conductive carbon black to the epoxy.
Considerable efforts have been devoted for the development of low cost ferroelectric and clean energy storage multifunctional materials. Modification in design and production of a low cost material with well proven process provides pathway for high energy density dielectric energy storage. We studied fluorine doped a commercially well-established material system barium strontium titanate with two different concentrations of dopants and studied the morphological transition and its effect on properties. It was observed that sample with higher concentration transitioned much faster into glassy state, followed by growth of fibers which turned into a self-arranged bird nest type shape. The sample with lower concentration changed slowly into glassy state and only few fibers were farmed. Dielectric was highly dependent on processing methods and shows variation with crystallinity of material, temperature and cooling conditions during processing. In the higher concentration range, we observed nano-scale interface breakdown very similar to that of solid-liquid interface breakdown during crystal growth.
Estimates of short and long term solar activity are required for calculating variations in the environment with regard to spacecraft charging, radiation effects, and orbital lifetime. Correlations appear to exist between the time of solar activity and the time of operational anomalies due to electrical discharges when the dielectric surfaces of geosynchronous spacecraft are charged by interaction with the ambient plasma to levels above breakdown voltage. An ability to predict the solar induced variation variability of the plasmas could permit refinement of design criteria. The influence of the radiation on spacecraft materials, systems, and manned operations is summarized. Solar radition effects on the orbital altitude atmospheric density environment and spacecraft lifetimes are also considered.
Thin films of LaF3 were e-gun and thermally deposited on several substrates. The e-gun deposited films are fluorine deficient, have high ionic conductivities that persist to 77 K, and high effective dielectric constants. The thermally deposited material tends to be closer to stoichiometric, and have higher effective breakdown field strengths. Thermally deposited LaF3 films with resistivities in excess of 10 to the 12th power ohms - cm were deposited on metal coated glass substrates. The LaF3 films were shown to adhere well to PbSnTe, surviving repeated cycles between room temperature and 77 K. The LaF3 films on GaAs were also studied.
NASA has planned a mission to study Jupiter’s moon, Europa. The mission would place a spacecraft into orbit around Jupiter, performing nominally 45 flybys of the moon. The suite of instruments onboard the spacecraft would investigate Europa’s potential to sustain life, studying the moon’s atmosphere, water-ice crust, suspected subsurface ocean, and rocky interior. The radiation environment at Europa’s orbit is severe and presents a significant threat to the spacecraft. There are several radiation effects that could be problematic, one of which is internal charging. Problems due to internal charging arise when high energy electrons penetrate the spacecraft and deposit within onboard dielectrics or floating metals. These charges can build up over time, generating electric fields that exceed the breakdown strength of materials in the region. A rapid discharge of the stored charges may occur, sending current pulses into electronics and potentially damaging them. An Internal Electrostatic Discharge (IESD) design environment was created for the planned Europa mission [Kim et al, in press]. The IESD design environment is meant to characterize the part of the radiation environment that poses the largest threat to the spacecraft with respect to internal charging. The environment was based off of electron data gathered by the Galileo spacecraft. Over the past year, the internal charging threat to several hardware components of the planned Europa Clipper spacecraft have been characterized using simulations and/or tests. The subject report documents one such test on Micro-D connectors.
A dielectric model of waveguide arcs is presented to relate measurable electromagnetic quantities to the physical parameters characterizing the breakdown process.
We report on the design methodology of a fix-tuned split-block waveguide balanced frequency tripler working nominally at 300 GHz. It features six GaAs Schottky planar diodes in a balanced configuration. The circuit will be fabricated with JPL membrane technology in order to minimize dielectric loading and insure an accurate and uniform thickness of the substrate. The multiplier power handling is limited by the breakdown voltage of the diodes that depends on the doping level of the active layer. With six diodes, the current choice for the doping level leads to medium power handling capabilities of about 50 mW. Increasing the number of diodes to eight would be an option but would lead to increased difficulties in design and fabrication.
Polymers have been widely used as wiring electrical insulation materials in space/air-craft. The dielectric properties of insulation polymers can change over time, however, due to various aging processes such as exposure to heat, humidity and mechanical stress. Therefore, the study of polymers used in electrical insulation of wiring is important to the aerospace industry due to potential loss of life and aircraft in the event of an electrical fire caused by breakdown of wiring insulation. Part of this research is focused on studying the mechanisms of various environmental aging process of the polymers used in electrical wiring insulation and the ways in which their dielectric properties change as the material is subject to the aging processes. The other part of the project is to determine the feasibility of a new capacitive nondestructive testing method to indicate degradation in the wiring insulation, by measuring its permittivity.
Solid tantalum capacitors are widely used in space applications to filter low-frequency ripple currents in power supply circuits and stabilize DC voltages in the system. Tantalum capacitors manufactured per military specifications (MIL-PRF-55365) are established reliability components and have less than 0.001% of failures per 1000 hours (the failure rate is less than 10 FIT) for grades D or S, thus positioning these parts among electronic components with the highest reliability characteristics. Still, failures of tantalum capacitors do happen and when it occurs it might have catastrophic consequences for the system. This is due to a short-circuit failure mode, which might be damaging to a power supply, and also to the capability of tantalum capacitors with manganese cathodes to self-ignite when a failure occurs in low-impedance applications. During such a failure, a substantial amount of energy is released by exothermic reaction of the tantalum pellet with oxygen generated by the overheated manganese oxide cathode, resulting not only in destruction of the part, but also in damage of the board and surrounding components. A specific feature of tantalum capacitors, compared to ceramic parts, is a relatively large value of capacitance, which in contemporary low-size chip capacitors reaches dozens and hundreds of microfarads. This might result in so-called surge current or turn-on failures in the parts when the board is first powered up. Such a failure, which is considered as the most prevalent type of failures in tantalum capacitors [I], is due to fast changes of the voltage in the circuit, dV/dt, producing high surge current spikes, I(sub sp) = Cx(dV/dt), when current in the circuit is unrestricted. These spikes can reach hundreds of amperes and cause catastrophic failures in the system. The mechanism of surge current failures has not been understood completely yet, and different hypotheses were discussed in relevant literature. These include a sustained scintillation breakdown model [1-3]; electrical oscillations in circuits with a relatively high inductance [4-6]; local overheating of the cathode [5,7, 8]; mechanical damage to tantalum pentoxide dielectric caused by the impact of MnO2 crystals [2,9, 10]; or stress-induced-generation of electron traps caused by electromagnetic forces developed during current spikes [11]. A commonly accepted explanation of the surge current failures is that at unlimited current supply during surge current conditions, the self-healing mechanism in tantalum capacitors does not work, and what would be a minor scintillation spike if the current were limited, becomes a catastrophic failure of the part [l, 12]. However, our data show that the scintillation breakdown voltages are significantly greater that the surge current breakdown voltages, so it is still not clear why the part, which has no scintillations, would fail at the same voltage during surge current testing (SCT).