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NASA NTRS2009

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process.

Choi, Sang↗

NASA NTRS1995

Modeling the Role of Dislocation Substructure During Class M and Exponential Creep

The different substructures that form in the power-law and exponential creep regimes for single phase crystalline materials under various conditions of stress, temperature and strain are reviewed. The microstructure is correlated both qualitatively and quantitatively with power-law and exponential creep as well as with steady state and non-steady state deformation behavior. These observations suggest that creep is influenced by a complex interaction between several elements of the microstructure, such as dislocations, cells and subgrains. The stability of the creep substructure is examined in both of these creep regimes during stress and temperature change experiments. These observations are rationalized on the basis of a phenomenological model, where normal primary creep is interpreted as a series of constant structure exponential creep rate-stress relationships. The implications of this viewpoint on the magnitude of the stress exponent and steady state behavior are discussed. A theory is developed to predict the macroscopic creep behavior of a single phase material using quantitative microstructural data. In this technique the thermally activated deformation mechanisms proposed by dislocation physics are interlinked with a previously developed multiphase, three-dimensional. dislocation substructure creep model. This procedure leads to several coupled differential equations interrelating macroscopic creep plasticity with microstructural evolution.

Raj, S. V.↗

NASA NTRS1984

Influence of clinostat rotation on fertilized amphibian egg pattern specification

Pattern specification in fertile Xenopus eggs rotated on horizontal clinostats was monitored with respect to primary embryonic axis formation, subsequent morphogenesis, and compartmentalization of the cytoplasm. At the speeds of 1 to 24 rpm (which are believed to simulate microgravity) a large percentage of eggs developed normal axial structures. Eggs clinostated at 12 rpm showed a randomization of dorsal/ventral polarity. The cytoplasmic compartments showed some clinostat effects but no abnormal mixing, disruption or dislocation of compartments. It is predicted that Xenopus eggs fertilized and allowed to develop in space will retain normal cytoplasmic density compartments, establish primary axes and undergo normal morphogenesis in space. Their dorsal/ventral polarity may not, however, be determined by the sperm entrance site (as is the case for 1 g eggs).

Neff, A. W.↗

NASA NTRS1990

Pinning, flow and plastic deformation of flux vortices in high T(sub c) superconductors

In high temperature superconductor (HTSC) materials the vortices are highly mobile and flexible. This is reflected in different models of melt of a vortex lattice. Another aspect of the problem is stressed: an easy nucleation and high mobility of dislocations in the vortex lattice. Some models of plastic deformation of vortex lattice are considered as a result of its interaction with a real crystal structure. Depinning is interpreted as yield of plastic flow is vortex medium. Effect of macroscopic defects in crystal structures (pores, inclusions, grain and domain boundaries) is being considered in detail. Available experimental facts on magnetization and a critical current in HTSC and conventional superconductors are discussed from the points of view of depinning to vortices vs. plastic flow of vortices vs. plastic flow of vortices medium.

Roytburd, A.↗

NASA NTRS1999

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

Neudeck, Philip G.↗

NASA NTRS1983

TEM and SEM (EBIC) investigations of silicon bicrystals

The electrical and structural properties of low and medium angle tilt grain boundaries in silicon bicrystals were studied in order to obtain insight into the mechanisms determining the recombination activity. The electrical behavior of these grain boundaries was studied with the EBIC technique. Schottky barriers rather than p-n junctions were used to avoid annealing induced changes of the structure and impurity content of the as-grown crystals. Transmission electron spectroscopy reveals that the 20 deg boundary is straight, homogeneous, and free of extrinsic dislocations. It is concluded that, in the samples studied, the electrical effect of grain boundaries appears to be independent of the boundary misorientation. The dominant influence appears to be impurity segregation effects to the boundary. Cleaner bicrystals are required to study intrinsic differences in the electrical activity of the two boundaries.

Gleichmann, R.↗

NASA NTRS1987

The microstructure and tensile properties of extruded melt-spun ribbons of iron-rich B2 FeAl

The microstructure of extruded rods of iron-rich FeAl(B2-structure), as characterized by TEM, SEM, optical microscopy and x-ray diffractometry, consisted of elongated grains with a 111-line fibre texture containing a high dislocation density. Numerous oxide particles were found, mostly in lines which reflected the matrix flow during extrusion. In addition, some large inclusions were present. Tensile testing of annealed, relatively dislocation-free specimens as a function of increasing temperature found increasing ductility up to 900K, above which a ductility drop occurred accompanied by a change in fracture mode, from transgranular cleavage to intergranular fracture. The yield strength, which was independent of temperature up to 800K (at about 500MPa), also decreased rapidly as diffusion became more important. The predominant slip vector changed from 111-line to 100-line around 700K.

Baker, I.↗

NASA NTRS2014

Structural Characterization of Lateral-grown 6H-SiC am-plane Seed Crystals by Hot Wall CVD Epitaxy

The performance of commercially available silicon carbide (SiC) power devices is limited due to inherently high density of screw dislocations (SD), which are necessary for maintaining polytype during boule growth and commercially viable growth rates. The NASA Glenn Research Center (GRC) has recently proposed a new bulk growth process based on axial fiber growth (parallel to the c-axis) followed by lateral expansion (perpendicular to the c-axis) for producing multi-faceted m-plane SiC boules that can potentially produce wafers with as few as one SD per wafer. In order to implement this novel growth technique, the lateral homoepitaxial growth expansion of a SiC fiber without introducing a significant number of additional defects is critical. Lateral expansion is being investigated by hot wall chemical vapor deposition (HWCVD) growth of 6H-SiC am-plane seed crystals (0.8mm x 0.5mm x 15mm) designed to replicate axially grown SiC single crystal fibers. The post-growth crystals exhibit hexagonal morphology with approximately 1500 m (1.5 mm) of total lateral expansion. Preliminary analysis by synchrotron white beam x-ray topography (SWBXT) confirms that the growth was homoepitaxial, matching the polytype of the respective underlying region of the seed crystal. Axial and transverse sections from the as grown crystal samples were characterized in detail by a combination of SWBXT, transmission electron microscopy (TEM) and Raman spectroscopy to map defect types and distribution. X-ray diffraction analysis indicates the seed crystal contained stacking disorders and this appears to have been reproduced in the lateral growth sections. Analysis of the relative intensity for folded transverse acoustic (FTA) and optical (FTO) modes on the Raman spectra indicate the existence of stacking faults. Further, the density of stacking faults is higher in the seed than in the grown crystal. Bundles of dislocations are observed propagating from the seed in m-axis lateral directions. Contrast extinction analysis of these dislocation lines reveals they are edge type basal plane dislocations that track the growth direction. Polytype phase transition and stacking faults were observed by high-resolution TEM (HRTEM), in agreement with SWBXT and Raman scattering.

Single Crystal↗

NASA NTRS1985

Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures

GaAs/InAs(100) multiple interface structures involving 7.4 percent lattice mismatch have been fabricated via molecular beam epitaxy and examined via transmission electron microscopy. It is found that high-quality, dislocation-free interfaces involving such high lattice mismatch can indeed be experimentally realized for very thin layers provided proper care is given to achieve a balance between the growth kinetics and the thermodynamics leading to the equilibrium ground state of the strained layer. The compressive strain is homogeneously accommodated and a tetragonal distortion is induced in the InAs layer with a perpendicular lattice constant in close agreement with that expected on the basis of the continuum theory and elastic constants of bulk InAs.

Grunthaner, F. J.↗

NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗

NASA NTRS1973

Tensile properties to 650 C and deformation structures in a precipitation strengthened titanium-aluminum alloy

Appreciable strength levels were retained to 650 C in a Ti-10Al-1Si alloy aged in the (alpha + alpha sub 2) phase field to yield optimum room temperature strength and ductility. The aging treatment precipitated a uniform distribution of alpha sub 2-particles such that, at room temperature, dislocations bypassed instead of shearing the particles at low strains. Specimens fractured at room temperature exhibited fine uniform dimples even for those aging conditions that imparted no macroscopic ductility. The main crack appeared to propagate through the planar slip bands that had cut through the alpha sub 2-particles. A two-step aging process produced a higher volume fraction of bimodally distributed alpha sub 2-particles that led to higher strength levels at elevated temperatures. Both for the single size and the bimodal alpha sub 2-particle distributions, elevated-temperature deformation structures consisted mainly of planar slip bands that sheared through the alpha sub 2-particles.

Mendiratta, M. G.↗

NASA NTRS2006

CFD Growth of 3C-SiC on 4H/6H Mesas

This article describes growth and characterization of the highest quality reproducible 3C-SiC heteroepitaxial films ever reported. By properly nucleating 3C-SiC growth on top of perfectly on-axis (0001) 4H-SiC mesa surfaces completely free of atomic scale steps and extended defects, growth of 3C-SiC mesa heterofilms completely free of extended crystal defects can be achieved. In contrast, nucleation and growth of 3C-SiC mesa heterofilms on top of 4H-SiC mesas with atomic-scale steps always results in numerous observable dislocations threading through the 3C-SiC epilayer. High-resolution X-ray diffraction and transmission electron microscopy measurements indicate non-trivial in-plane lattice mismatch between the 3C and 4H layers. This mismatch is somewhat relieved in the step-free mesa case via misfit dislocations confined to the 3C/4H interfacial region without dislocations threading into the overlying 3C-SiC layer. These results indicate that the presence or absence of steps at the 3C/4H heteroepitaxial interface critically impacts the quality, defect structure, and relaxation mechanisms of single-crystal heteroepitaxial 3C-SiC films.

Neudeck, Philip G.↗

NASA NTRS1974

Interfaces in directionally solidified eutectics

Consideration of the interface between the phases in directionally solidified eutectic structures with respect to its morphology, crystallography, stability, and overall response to internal and external stress fields. Yielding behavior in such eutectic structures is shown to be controlled by several possible mechanisms. Two that can be related to the interface in directionally-solidified eutectic alloys are: (1) the interaction of slip dislocations with interface dislocations of the semicoherent boundaries, and (2) restrictions of allowable deformation mechanisms in two contiguous phases due to orientation effects. Evidence found thus far for elastic-plastic eutectic composites indicates that interfaces are capable of diverting fatigue cracks parallel to the loading axis.

Hertzberg, R. W.↗

NASA NTRS1983

Stress studies in EFG

Stress distributions were calculated for a creep law to predict a rate of plastic deformation. The expected reduction in stresses is obtained. Improved schemes for calculating growth system temperature distributions were evaluated. Temperature field modeling examined the possibility of using horizontal temperature gradients to influence stress distribution in ribbon. The defect structure of 10 cm wide ribbon grown in the cartridge system was examined. A new feature is identified from an examination of cross sectional micrographs. It consists of high density dislocation bands extending through the ribbon thickness. A four point bending apparatus was constructed for high temperature study of the creep response of silicon, to be used to generate defects for comparison with as grown defects in ribbon. The feasibility of laser interferometric techniques for sheet residual stress distribution measurement is examined. The mathematical formalism for calculating residual stress from changes in surface topology caused by an applied stress in a rectangular specimen was developed, and the system for laser interferometric measurement to obtain surface topology data was tested on CZ silicon.

Source record↗

NASA NTRS1986

Parquet: Regions of areal plastic dislocations (on Venus)

The extensive flat elevations of the Northern Hemisphere of Venus are covered with frequently intersecting lines of dislocations, resembling the outline of a giant parquet. In the internal sections of these regions we find grabens and regions of extension, and on the periphery lobe-shaped flow structures. The parquet was formed after the beginning of the formation of the lava plains, but covered by the youngest lava. These structures apparently arose partly because of the dragging of blocks of crust by the asthenospheric flows, and partly in the gravitational sliding of such heated blocks in the partial melting of their base. It is possible that these elevations occupy on Venus the place of the Earth's rift systems.

Sukhanov, A. L.↗

NASA NTRS1994

Lithospheric-scale buckling and thrust structures on Mars: The Coprates rise and south Tharsis ridge belt

Detailed photogeologic mapping documents for the first time the deformation sequence of the Coprates rise. Materials of Middle Noachian through perhaps Early Hesperian age were involved in the horizontal shortening of crustal and lithospheric rocks that produced uplift and asymmetric, east-vergent folding of these layers during the Late Noachian and perhaps Early Hesperian. Previous suggestions of normal faulting as the deforming mechanism are not supported by the new mapping or by dislocation models of rise topography. The most likely mechanism for producing the Coprates rise is folding due to buckling instability and perhaps thrust faulting. An extensive ridge belt concentric to south Tharsis is defined by a newly recognized system of approximately coeval long-wavelength topogtaphic ridges and swales that include the Coprates rise. Horizontal shortening of crust and lithosphere is manifested by periodically spaced structures at two different scales: wrinkle ridges spaced tens of kilometers apart and the south Tharsis system of ridges spaced hundreds of kilometers apart. Both types of structures may be associated with early volcanotectonic activity and crustal thickening in south Tharsis. These and other large ridges indicate that lithospheric buckling and thrust faulting may have been common on early Mars.

Schultz, Richard A.↗

NASA NTRS1986

Development of high-efficiency solar cells on silicon web

Achievement of higher efficiency cells by directing efforts toward identifying carrier loss mechanisms; design of cell structures; and development of processing techniques are described. Use of techniques such as deep-level transient spectroscopy (DLTS), laser-beam-induced current (LBIC), and transmission electron microscopy (TEM) indicated that dislocations in web material rather than twin planes were primarily responsible for limiting diffusion lengths in the web. Lifetimes and cell efficiencies can be improved from 19 to 120 microns, and 8 to 10.3% (no AR), respectively, by implanting hydrogen at 1500 eV and a beam current density of 2.0 mA/sq cm. Some of the processing improvements included use of a double-layer AR coating (ZnS and MgF2) and an addition of an aluminum back surface reflectors. Cells of more than 16% efficiency were achieved.

Meier, D. L.↗

NASA NTRS1990

A review of nonlinear constitutive models for metals

Over the past two decades a number of thermomechanical constitutive theories have been proposed for viscoplastic metals. These models are in most cases similar in that they utilize a set of internal state variables which provide locally averaged representations of microphysical phenomena such as dislocation rearrangement and grain boundary sliding. The state of development of several of these models is now at the point where accurate theoretical solutions can be obtained for a wide variety of structural problems at elevated temperatures. The fundamentals of viscoplasticity are briefly reviewed and a general framework is outlined. Several of the more prominent models are reviewed, and predictions from models are compared to experimental results.

Allen, David H.↗