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At least 145 records · Page 8

Weak antilocalization and universal conductance fluctuations in bismuth telluro-sulfide topological insulators

We report on van der Waals epitaxial growth, materials characterization, and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO{sub 2} and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness, and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Giant magnetoresistance in the cluster glass regime of Co-Ga alloys

A detailed study of low temperature electrical transport properties of Co{sub x}Ga{sub 100−x} (x = 54, 55.5, 57) alloy has been carried out. The origin of the resistivity anomalies and correlation between magnetic and electrical transport properties are identified through an elaborate analysis. The weak localization and enhanced electron-electron interaction effects partially support the electrical transport properties of the system. Further, the observed magnetoresistance can be well represented by localized model along with quantum corrections. The low temperature magnetoresistance value near critical composition is comparable to that reported in giant magnetoresistance materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Observability of localized magnetoplasmons in quantum dots: Scrutinizing the eligibility of far-infrared, Raman, and electron-energy-loss spectroscopies

We investigate a one-component, quasi-zero dimensional, quantum plasma exposed to a parabolic potential and an applied magnetic field in the symmetric gauge. If the size of such a system as can be realized in the semiconducting quantum dots is on the order of the de-Broglie wavelength, the electronic and optical properties become highly tunable. Then the quantum size effects challenge the observation of many-particle phenomena such as the magneto-optical absorption, Raman intensity, and electron energy-loss spectrum. An exact analytical solution of the problem leads us to infer that these many-particle phenomena are, in fact, dictated by the generalized Kohn’s theorem (GKT) in the long-wavelength limit. Maneuvering the confinement and/or the magnetic field furnishes the resonance energies capable of being explored with the FIR, Raman, and/or electron-energy-loss spectroscopy. This implies that either of these probes is competent in observing the localized magnetoplasmons in the system. As an application of the rigorous analytical diagnosis of the system, we have presented various pertinent single-particle, such as Fock-Darwin spectrum, Fermi energy, zigzag excitation spectrum, and magneto-optical transitions, and the many-particle phenomena, such as magneto-optical absorption, Raman intensity, and electron energy-loss probability. In the latter, the energy position of the resonance peaks is observed to be independent of the electron-electron interactions and hence of the number of electrons in the quantum dot in compliance with the GKT. It is found that both confinement potential and magnetic field play a decisive role in influencing the aforementioned many-particle phenomena. Specifically, increasing (decreasing) the strength of the confining potential is found to be analogous to shrinking (expanding) the size of the quantum dots and results into a blue (red) shift in the respective spectra. Intensifying the magnetic field has two-fold effects in the resonance spectra associated with all three spectroscopies considered here: the lower resonance peak observes a red shift, whereas the higher one experiences a blue shift. This is a unique and intriguing behavior observed in the quantum dots with complete confinement. A deeper insight into the physics of the quantum dots is paving the way for their implementation in such diverse fields as quantum computing and medical imaging.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetization of InAs parabolic quantum dot: An exact diagonalization approach

The magnetization of two electron InAs quantum dot has been studied as a function of magnetic field. The electron-electron interaction has been taken into account by using exact diagonalization method numerically. The magnetization at zero external magnetic field is zero and increases in the negative direction. There is also a paramagnetic peak where the energy levels cross from singlet state to triplet state. Finally, the magnetization falls again to even negative values and saturates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Specific heat of parabolic quantum dot with Dresselhaus spin-orbit interaction

The heat capacity of a two electron quantum dot with parabolic confinement in magnetic field in the presence of electron-electron interaction, Dresselhaus spin-orbit interaction (DSOI) has been studied. The electron-electron interaction has been treated by a model potential which makes the Hamiltonian to be soluble exactly. The RSOI has been treated by a unitary transformation and the terms up to second order in DSOI constants have been considered. The heat capacity is obtained by canonical averaging. So far no study has been reported in literature on the effect of DSOI on the heat capacity of quantum dot.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ab initio study of double perovskites Ba{sub 2}DySbO{sub 6}

First principle study of the electronic band structure of Ba2DySbO{sub 6} synthesied by the solid state reaction technique have been performed within the framework of density function theory using WIEN2K. It has been shown in the absence of electron-electron interaction (U=0), BaDySO{sub 6} behaves like a half-metal. Even in the presence of DFT+U, electron-electron interaction via the Hubbard term (from U = 0, 2.72e -7.02 eV), it still shows half metals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strong spin-orbit interaction and quadratic temperature dependence of electron-phonon scattering in disorder V{sub 75}X{sub 25} (X = Pd, Al) alloys at low temperature

The results of a comprehensive study of weak electron localization (WEL) and electron-electron interaction (EEI) effects in disordered V{sub 75}X{sub 25} (X = Pd, Al) alloys has been reported. The resistivity in absence of magnetic field shows a minimum at temperature T = T{sub m} and follows T{sup 1/2} law within the temperature range 5 K ≤ T ≤ T{sub m}, which suggests predominant EEI effect. Magnetoresistivity is positive due to strong spin-orbit interaction. The dephasing scattering time is dominated by the electron-phonon scattering. The electron-phonon scattering rate shows quadratic temperature dependence behavior, which is explained by the theory of incomplete dragging at the random scattering potential by phonons. The zero temperature scattering time strongly depends on the disorder and its magnitude decreases with increasing disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spin density waves predicted in zigzag puckered phosphorene, arsenene and antimonene nanoribbons

The pursuit of controlled magnetism in semiconductors has been a persisting goal in condensed matter physics. Recently, Vene (phosphorene, arsenene and antimonene) has been predicted as a new class of 2D-semiconductor with suitable band gap and high carrier mobility. In this work, we investigate the edge magnetism in zigzag puckered Vene nanoribbons (ZVNRs) based on the density functional theory. The band structures of ZVNRs show half-filled bands crossing the Fermi level at the midpoint of reciprocal lattice vectors, indicating a strong Peierls instability. To remove this instability, we consider two different mechanisms, namely, spin density wave (SDW) caused by electron-electron interaction and charge density wave (CDW) caused by electron-phonon coupling. We have found that an antiferromagnetic Mott-insulating state defined by SDW is the ground state of ZVNRs. In particular, SDW in ZVNRs displays several surprising characteristics:1) comparing with other nanoribbon systems, their magnetic moments are antiparallelly arranged at each zigzag edge and almost independent on the width of nanoribbons; 2) comparing with other SDW systems, its magnetic moments and band gap of SDW are unexpectedly large, indicating a higher SDW transition temperature in ZVNRs; 3) SDW can be effectively modified by strains and charge doping, which indicates that ZVNRs have bright prospects in nanoelectronic device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Long-lived nanosecond spin coherence in high-mobility 2DEGs confined in double and triple quantum wells

We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored by the sample parameters of structural symmetry (Rashba constant), width, and electron density (Dresselhaus linear and cubic constants) which allow us to attain long dephasing times in the nanoseconds range. The determination of the scales, namely, transport scattering time, single-electron scattering time, electron-electron scattering time, and spin polarization decay time further supports the possibility of using n-doped multilayer systems for developing spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Shift of optical absorption edge in SnO{sub 2} films with high concentrations of nitrogen grown by chemical vapor deposition

The optical and electrical properties of n-type SnO{sub 2} films with high concentrations of nitrogen (SnO{sub 2}:N) grown by chemical vapor deposition are studied. The carrier concentration increases from 4.1 × 10{sup 18} to 3.9 × 10{sup 19 }cm{sup −3} and the absorption edge shifts from 4.26 to 4.08 eV with increasing NH{sub 3} flow rate. Typical Urbach tails were observed from the absorption spectra and the Urbach energy increases from 0.321 to 0.526 eV with increasing NH{sub 3} flow rate. An “effective” absorption edge of about 4.61 eV was obtained for all investigated samples from fitting the extrapolations of the Urbach tails. Burstein-Moss effect, electron-impurity, and electron-electron interactions are shown to play a minor role for the shift of the absorption edges in SnO{sub 2}:N thin films.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Ultra-fast computation of electronic spectra for large systems by tight-binding based simplified Tamm-Dancoff approximation (sTDA-xTB)

The computational bottleneck of the extremely fast simplified Tamm-Dancoff approximated (sTDA) time-dependent density functional theory procedure [S. Grimme, J. Chem. Phys. 138, 244104 (2013)] for the computation of electronic spectra for large systems is the determination of the ground state Kohn-Sham orbitals and eigenvalues. This limits such treatments to single structures with a few hundred atoms and hence, e.g., sampling along molecular dynamics trajectories for flexible systems or the calculation of chromophore aggregates is often not possible. The aim of this work is to solve this problem by a specifically designed semi-empirical tight binding (TB) procedure similar to the well established self-consistent-charge density functional TB scheme. The new special purpose method provides orbitals and orbital energies of hybrid density functional character for a subsequent and basically unmodified sTDA procedure. Compared to many previous semi-empirical excited state methods, an advantage of the ansatz is that a general eigenvalue problem in a non-orthogonal, extended atomic orbital basis is solved and therefore correct occupied/virtual orbital energy splittings as well as Rydberg levels are obtained. A key idea for the success of the new model is that the determination of atomic charges (describing an effective electron-electron interaction) and the one-particle spectrum is decoupled and treated by two differently parametrized Hamiltonians/basis sets. The three-diagonalization-step composite procedure can routinely compute broad range electronic spectra (0-8 eV) within minutes of computation time for systems composed of 500-1000 atoms with an accuracy typical of standard time-dependent density functional theory (0.3-0.5 eV average error). An easily extendable parametrization based on coupled-cluster and density functional computed reference data for the elements H–Zn including transition metals is described. The accuracy of the method termed sTDA-xTB is first benchmarked for vertical excitation energies of open- and closed-shell systems in comparison to other semi-empirical methods and applied to exemplary problems in electronic spectroscopy. As side products of the development, a robust and efficient valence electron TB method for the accurate determination of atomic charges as well as a more accurate calculation scheme of dipole rotatory strengths within the Tamm-Dancoff approximation is proposed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Temperature-modulated electronic structure of graphene on SiC: Possible roles of electron-electron interaction and strain

We have iobserved the electron band structure of graphene epitaxially grown on an SiC substrate using angle-resolved photoemission spectroscopy. The conical energy spectrum of graphene exhibits a minimum slope at ~50 K, which is accompanied by the minimum separation between its two branches. These observations provide a viable route towards the engineering of the electronic properties of graphene using temperature, while the latter suggests a possible evidence of gap engineering via strain induced by the substrate and modulated by temperature.

36 MATERIALS SCIENCE↗

Unconventional large linear magnetoresistance in Cu 2- x Te

We report a large linear magnetoresistance in Cu 2-x Te, reaching Δρ/ρ(0) = 250% at 2 K in a 9 T field, for samples with x = 0.13 to 0.22. These results are comparable to those for Ag 2 X materials, though for Cu 2-x Te the carrier densities are considerably larger. Examining the magnitudes and the crossover from quadratic to high-field linear behavior, we show that models based on classical transport behavior best explain the observed results. The effects are traced to the misdirection of currents in high mobility transport channels, likely due to behavior at grain boundaries such as topological surface states or a high mobility interface phase. The resistivity also exhibits a T 2 dependence in the temperature range where the large linear MR appears, an indicator of electron-electron interaction effects within the high mobility states. Thus this is an example of a system in which electron-electron interactions dominate the low-temperature linear magnetoresistance.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Conservative algorithms for non-Maxwellian plasma kinetics

Here, we present a numerical model and a set of conservative algorithms for Non-Maxwellian plasma kinetics with inelastic collisions. These algorithms self-consistently solve for the time evolution of an isotropic electron energy distribution function interacting with an atomic state distribution function of an arbitrary number of levels through collisional excitation, deexcitation, as well as ionization and recombination. Electron-electron collisions, responsible for thermalization of the electron distribution, are also included in the model. The proposed algorithms guarantee mass/charge and energy conservation in a single step, and is applied to the case of non-uniform gridding of the energy axis in the phase space of the electron distribution function. Numerical test cases are shown to demonstrate the accuracy of the method and its conservation properties.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Epitaxial stabilization of Sr 3 Ir 2 O 7 thin films

Ruddlesden-Popper type Sr n+1 Ir n O 3n+1 compounds are a major focus of condensed matter physics, where the subtle balance between electron-electron correlation, spin–orbit interaction, and crystal field effect brings a host of emergent phenomena. While it is understandable that a canted antiferromagnetic insulating state with an easy-plane anisotropy is developed in Sr 2 IrO 4 as the two-dimensional limit of the series, it is intriguing that bilayer Sr 3 Ir 2 O 7 , with slightly higher effective dimensionality, stabilizes c-axis collinear antiferromagnetism. This also renders Sr 3 Ir 2 O 7 a unique playground to study exotic physics near a critical spin transition point. However, the epitaxial growth of Sr 3 Ir 2 O 7 is still a challenging task because of the narrow growth window. In our research, we have studied the thermodynamic process during the synthesis of Sr 3 Ir 2 O 7 thin films. We expanded the synthesis window by mapping out the relationship between the thin film crystal structure and the gas pressure. Furthermore, our work thus provides a more accessible avenue to stabilize metastable materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Detection of Rashba spin splitting in 2D organic-inorganic perovskite via precessional carrier spin relaxation

The strong spin-orbit interaction in the organic-inorganic perovskites tied to the incorporation of heavy elements (e.g., Pb and I) makes these materials interesting for applications in spintronics. In conjunction with a lack of inversion symmetry associated with distortions of the metal-halide octahedra, surfaces and interfaces, or the application of a bias, the Rashba effect (used in spin field-effect transistors and spin filters) has been predicted to be much larger in these materials than in traditional III-V semiconductors such as GaAs. Evidence of strong Rashba coupling has been observed in both 3D (bulk) and 2D perovskites, with the relative role of bulk and surface Rashba contributions in the former case under active debate. The varying size of the reported spin splittings points to the need for more experimental studies of Rashba effects in the organic-inorganic perovskite family of materials. Here, we apply time-resolved circular dichroism techniques to the study of carrier spin dynamics in a 2D perovskite thin film [(BA)2MAPb2I7; BA = CH3(CH2)3NH3, MA = CH3NH3]. Our findings confirm the presence of a Rashba spin splitting via the dominance of precessional spin relaxation induced by the Rashba effective magnetic field (also known as D’yakonov Perel spin relaxation). The size of the Rashba spin splitting in our system was extracted from simulations of the measured spin dynamics incorporating LO-phonon and electron-electron scattering, yielding a value of 10 meV at an electron energy of 50 meV above the band gap, representing a 20 times larger value than in GaAs quantum wells.

36 MATERIALS SCIENCE↗

Probing the electronic structure of graphene near and far from the Fermi level via planar tunneling spectroscopy

Scanning tunneling spectroscopy (STS) has yielded significant insight into the electronic structure of graphene and other two-dimensional (2D) materials. STS directly measures a fundamental and directly calculable quantity: single particle density of states (SPDOS). Due to experimental setup limitations, however, STS has been unable to explore 2D materials in ultrahigh magnetic fields where electron-electron interactions can drastically change the SPDOS. Recent developments in the assembly of heterostructures composed of graphene and hexagonal boron nitride have enabled a device-based alternative to potentially overcome these roadblocks. Thus far, however, these nascent efforts are incomplete in analyzing and understanding tunneling spectra and have yet to explore graphene at high magnetic fields. Here, we report an experiment at magnetic fields up to 18 T, which uses graphene tunneling field effect transistors (TFETs) to establish a clear benchmark for the measurement and analysis of graphene planar tunneling spectroscopy. We acquire gate tunable tunneling spectra of graphene and then use these data and electrostatic arguments to develop a systematic analysis scheme. This analysis reveals that TFET devices directly probe electronic structure features near and far from the Fermi level. In particular, our study yields identification of the Dirac point and numerous Landau levels as they fill and empty with charge via the application of a gate voltage. Our work demonstrates that TFET devices are a viable platform for directly probing the electronic structure of graphene and other 2D materials in high magnetic fields, where exotic electronic states emerge.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Low-temperature MnBi alloys: Electronic and magnetic properties, constitution, morphology and fabrication (Review article)

The article reviews the rich phenomena of physical properties of MnBi. The diverse phenomena include strong spin-orbit interaction, anomalous temperature dependence of the coercivity and the magneto-crystalline anisotropy field, unique magneto-optical properties. Issues addressed include the nature of the electronic ground states of MnBi, the electronic and magnetic structures, Fermi surface, magneto-crystalline anisotropy, x-ray magnetic dichroism. The discussion includes key experiments, such as optical and magneto-optical spectroscopic measurements, de Haas-van Alphen (dHvA) measurements, x-ray photoemission and x-ray absorption spectroscopy measurements as well as x-ray magnetic circular dichroism. The effect of the spin-orbit (SO) interaction and Coulomb repulsion U were found to be crucial for the Fermi surface, cyclotron masses, magneto-optical properties, and x-ray magnetic circular dichroism. The microscopic origin of unique magneto-crystalline anisotropy and giant Kerr effect in MnBi is analyzed in detail. The huge Kerr effect in MnBi is caused by the combination of a sizable magnetic moment on manganese, the large spin-orbit coupling of bismuth, and a strong hybridization between the manganese 3d and the bismuth 6p states. The magneto-optically active states are mainly the 6p states of Bi. We show that the observed temperature dependence of the magneto-crystalline anisotropy can be explained taking into account the spin-orbit interaction together with strong Coulomb electron-electron interaction. The SO coupling of Bi is equally responsible for the large magneto-crystalline anisotropy energy as is the exchange splitting of Mn. The fabrication, morphology, and constitution of low-temperature MnBi alloys in bulk, thin films, and nanoparticles are discussed. The nanocomposite permanent magnetic materials based on MnBi, (Co, Fe) and Nd 2 Fe 14 B are also discussed.

36 MATERIALS SCIENCE↗