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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8

Modeling of Radiative Transfer in Protostellar Disks

This program implements a spectral line, radiative transfer tool for interpreting Spitzer Space Telescope observations by matching them with models of protostellar disks for improved understanding of planet and star formation. The Spitzer Space Telescope detects gas phase molecules in the infrared spectra of protostellar disks, with spectral lines carrying information on the chemical composition of the material from which planets form. Input to the software includes chemical models developed at JPL. The products are synthetic images and spectra for comparison with Spitzer measurements. Radiative transfer in a protostellar disk is primarily affected by absorption and emission processes in the dust and in molecular gases such as H2, CO, and HCO. The magnitude of the optical absorption and emission is determined by the population of the electronic, vibrational, and rotational energy levels. The population of the molecular level is in turn determined by the intensity of the radiation field. Therefore, the intensity of the radiation field and the population of the molecular levels are inter-dependent quantities. To meet the computational challenges of solving for the coupled radiation field and electronic level populations in disks having wide ranges of optical depths and spatial scales, the tool runs in parallel on the JPL Dell Cluster supercomputer with C++ and Fortran compiler with a Message Passing Interface. Because this software has been developed on a distributed computing platform, the modeling of systems previously beyond the reach of available computational resources is possible.

VonAllmen, Paul↗

High-temperature thermodynamics.

High temperature thermodynamics requiring species and phases identification, crystal structures, molecular geometries and vibrational, rotational and electronic energy levels and equilibrium constants

Margrave, J. L.↗

Quantum limit studies in single crystal and pyrolytic graphite

The occupied regions of momentum space in graphite are confined to elongated volumes near the hexagonal Brillouin zone edges. The elongation is along the hexagonal axis (c-axis), so that cross sectional areas perpendicular to that axis are very small. When magnetic fields are applied parallel to the c-axis, only the n = 0 Landau levels remain below the Fermi energy for fields above 7 tesla. The energy bands in graphite can be described by a set of seven parameters (including the Fermi energy as a parameter). In a quantizing magnetic field the Landau levels are described by a secular equation determined by diagonalizing the Hamiltonian. A major feature for the levels along the Brillouin zone edge is that the n = 0 Landau level for electrons is independent of magnetic field, while that for holes is field-dependent.

Woollam, J. A.↗

Pitch-angle diffusion of radiation belt electrons within the plasmasphere.

Study of the formation of the quiet-time electron slot, which divides the radiation belt electrons into an inner and an outer zone. The pitch-angle diffusion of radiation belt electrons resulting from resonant interactions with the observed plasmaspheric whistler-mode wave band is quantitatively investigated. The effects of wave propagation obliquely to the geomagnetic field direction with the resulting diffusion at all cyclotron-harmonic resonances and the Landau resonance are evaluated along with the effects of interactions occuring at all geomagnetic latitudes. The results obtained account for the long-term stability of the inner radiation zone, the location of its outer edge as a function of electron energy, and the removal of electrons to levels near zero throughout the slot. Computed pitch-angle distributions and precipitation decay rates are in good agreement with slot-region observations.

Lyons, L. R.↗

Correlation of materials properties with the atomic density concept

Based on the hypothesis that the number of atoms per unit volume, accurately calculable for any substance of known real density and chemical composition, various characterizing parameters (energy levels of electrons interacting among atoms of the same or different kinds, atomic mass, bond intensity) were chosen for study. A multiple exponential equation was derived to express the relationship. Various properties were examined, and correlated with the various parameters. Some of the properties considered were: (1) heat of atomization, (2) boiling point, (3) melting point, (4) shear elastic modulus of cubic crystals, (5) thermal conductivity, and (6) refractive index for transparent substances. The solid elements and alkali halides were the materials studied. It is concluded that the number of different properties can quantitively be described by a common group of parameters for the solid elements, and a wide variety of compounds.

Source record↗

Quantum limit studies in single-crystal and pyrolytic graphite

The occupied regions of momentum space in graphite are confined to very elongated volumes near the hexagonal Brillouin zone edges. The elongation is along the hexagonal axis (c axis) so that cross-sectional areas perpendicular to that axis are very small. Hence, when magnetic fields are applied parallel to the c axis only the n = 0 Landau levels remain below the Fermi energy for fields above 7 T (Woollam, 1971). The energy bands in graphite can be described by a set of seven parameters (McClure, 1971) (including the Fermi energy as a parameter). In a quantizing magnetic field the Landau levels are described by a secular equation determined by diagonalizing the Hamiltonian (McClure, 1960). A major unusual feature for the levels along the Brillouin zone edge is that the n = 0 Landau level for electrons is independent of magnetic field, while that for holes is field dependent.

Woollam, J. A.↗

IECM calibration and data reduction requirements

The induced environment contamination monitor (IECM) tape recorder format, as it relates to the ouput of meaningful data from the IECM instrument, is explained. Eight-bit words (or bytes) generate numbers that represent voltage levels of electronic detection probes for each experiment. This information is amalgamated by the IECM Data Acquisition and Control System (DACS). In some cases bits represent certain status situations concerning an experiment, such as whether a valve is opened or closed. Voltages are transformed into meaningful physical phenomena through equations of calibration. Data formats and plots are generated as requested for each IECM experimenter.

Wills, F. D.↗

Electron reflection and secondary emission characteristics of sputter-textured pyrolytic graphite surfaces

Low secondary and reflected primary electron emission from the collector electrode surfaces is important for optimum collector efficiency and hence for high overall efficiency of microwave amplifier tubes used in communication satellites and in military systems. Ion sputter texturing of the surface effectively suppresses electron emission from pyrolytic graphite, which is a promising collector electrode material. Secondary and reflected primary electron emission characteristics of sputter textured pyrolytic graphite surfaces with microstructures of various sizes and densities are presented. The microstructure with the lowest electron emission levels, less than those of soot, consists of a dense array of tall, thin spires.

Wintucky, E. G.↗

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗

Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling

Thin-oxide (40-50 A) metal oxide semiconductor (MOS) structures are shown to exhibit, before large levels of electron tunnel injection, the near-ideal behavior predicted for a uniform trapezoidal barrier with thick-oxide properties. The oscillatory field dependence caused by electron-wave interference at the Si/SiO2 interface suggests an abrupt, one-monolayer barrier transition (approximately 2.5 A) consistent with earlier work. After tunnel injection of 10 to the 17th - 5 x 10 to the 18th electrons/sq cm, the barrier undergoes appreciable degradation, leading to enhanced tunneling conductance. Reproducible behavior is observed among different samples. This effect is found to be consistent with the generation of positive states in the region of the oxide near the Si/SiO2 interface (less than 20 A), where the tunneling electrons emerge into the oxide conduction band.

Maserjian, J.↗

An investigation of impurity centers in semiconductors of variable composition. Part 1: General theory and some applications

A theory of deep point defects imbedded in otherwise perfect semiconductor crystals is developed with the aid of pseudopotentials. The dominant short-range forces engendered by the impurity are sufficiently weakened in all cases where the cancellation theorem of the pseudopotential formalism is operative. Thus, effective-mass-like equations exhibiting local effective potentials derived from nonlocal pseudopotentials are shown to be valid for a large class of defects. A two-band secular determinant for the energy eigenvalues of deep defects is also derived from the set of integral equations which corresponds to the set of differential equations of the effective-mass type. Subsequently, the theory in its simplest form, is applied to the system Al(x)Ga(1-x)As:Se. It is shown that the one-electron donor level of Se within the forbidden gap of Al(x)Ga(1-x)As as a function of the AlAs mole fraction x reaches its maximum of about 300 meV (as measured from the conduction band edge) at the cross-over from the direct to the indirect band-gap at x = 0.44 in agreement with experiments.

Vonroos, O. H.↗

Antarctic Meteorite Newsletter, volume 8, number 1

Preliminary descriptions and classifications of meteorites examined since the July 1984 newsletter are presented. Each macroscopic description summarizes features that were visible to the eye (with, at most, 50X magnification). Each thin section description represents features that were found in a survey-level examination of a polished thin section that was prepared from a small (usually extrior) chip of the meteorite. Classification is based on microscopic petrography and reconnaissance-level electron-probe microanalyses.

Source record↗

Equivalent electron fluence for space qualification of shallow junction heteroface GaAs solar cells

It is desirable to perform qualification tests prior to deployment of solar cells in space power applications. Such test procedures are complicated by the complex mixture of differing radiation components in space which are difficult to simulate in ground test facilities. Although it has been shown that an equivalent electron fluence ratio cannot be uniquely defined for monoenergetic proton exposure of GaAs shallow junction cells, an equivalent electron fluence test can be defined for common spectral components of protons found in space. Equivalent electron fluence levels for the geosynchronous environment are presented.

Wilson, J. W.↗