Resistance of contact materials to electric wear
Electric wear resistance of silver and cermet contacts
ELECTRIC CONTACT↗
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Kilauea Magnetotelluric Dataset
In 2002 and 2003 a collaborative effort was undertaken between Lawrence Berkeley National Laboratory, Sandia National Laboratories, the USGS Menlo Park, the USGS Hawaiian Volcano Observatory, and Electromagnetic Instruments Inc. to study the Kilauea volcano in Hawaii using the magnetotelluric (MT) technique. The work was motivated by a desire to improve understanding of the magma reservoirs and conduits within Kilauea and the East and Southwest Rift zones, which has implications for understanding Kilaueas plumbing system. An improved understanding of the rift zones has implications in understanding large-scale landslides that are generated in the Hilina Slump, which produce significant impacts on coastal communities. Up to eight stations operated simultaneously, with multiple remote reference sites, and data were processed using multi-station robust processing techniques. In total, data were acquired at 70 sites over the Southwest and East rift zones. Good to excellent quality data were obtained even in the harshest conditions, such as those encountered on the fresh lava flows of the East Rift Zone (ERZ), where electrical contact resistances are on the order of 100 kOhm. This data supports the continuing efforts to increase geothermal power on the island of Hawaii. Each of the 70 EDI files are the MT impedance tensors for 1 site. There is also a description of the processing of the data and a site map showing the locations of each site.
15 GEOTHERMAL ENERGY↗
Friction and wear of potentiometer contacts in vacuum.
Friction and wear of wire wound potentiometers sliding electric contacts in vacuum, evaluating lubricative powders and conductive composites
Jones, J. R.↗
Preserving the Josephson Coupling of Twisted Cuprate Junctions via Tailored Silicon Nitride Circuits Boards
Controlled fabrication of twisted van der Waals heterostructures is essential to unlock the full potential of moiré materials. However, achieving reproducibility remains a major challenge, particularly for air-sensitive materials such as Bi 2 Sr 2 CaCu 2 O 8 + δ (BSCCO), where it is crucial to preserve the intrinsic and delicate superconducting properties of the interface throughout the entire fabrication process. Here, a dry, inert and cryogenic assembly method is presented that combines silicon nitride nanomembranes (NMBs) with pre-patterned electrodes and the cryogenic stacking technique (CST) to fabricate high-quality twisted BSCCO Josephson junctions (JJs). This protocol prevents thermal and chemical degradation during both interface formation and electrical contact integration. It is also found that asymmetric membrane designs, such as a double cantilever, effectively suppress vibration-induced disorder due to wire bonding, resulting in sharp and hysteretic current–voltage characteristics. The junctions exhibit a twist-angle-dependent Josephson coupling with magnitudes comparable to the highest-performing devices reported to date, but achieved through a straightforward and versatile contact method, offering a scalable and adaptable platform for future applications. These findings highlight the importance of both interface and contact engineering in addressing reproducibility in superconducting van der Waals heterostructures.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Movement of Cracked Silicon Solar Cells During Module Temperature Changes
Cracks in crystalline silicon solar cells can lead to substantial power loss. While the cells' metal contacts can initially bridge these cracks and maintain electrical connections, the bridges are damaged by mechanical loads, including those due to temperature changes. We investigated the metallization bridges that form over cracks in encapsulated silicon solar cells. Microscopic characterization showed that the crack in the silicon can immediately propagate through the metal grid, but the grid can maintain electrical contact once the load is removed. We also quantified the movement of the cell fragments separated by a crack as a function of temperature. Cell fragments are free to move diagonally and to rotate, so the change in gap across the crack during a temperature change varies along the length of the crack. In one sample, we showed that a 10 degrees C temperature change, causing a 2 um increase in the separation of cell fragments, was sufficient to cause a reversible electrical disconnection of metallization bridging a crack.
14 SOLAR ENERGY↗
Formation Of Ohmic Gold Contacts On Epitaxial GaAs
New low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.
Hecht, Michael H.↗
Electrically Conductive Anodized Aluminum Surfaces
Anodized aluminum components can be treated to make them sufficiently electrically conductive to suppress discharges of static electricity. The treatment was conceived as a means of preventing static electric discharges on exterior satin-anodized aluminum (SAA) surfaces of spacecraft without adversely affecting the thermal-control/optical properties of the SAA and without need to apply electrically conductive paints, which eventually peel off in the harsh environment of outer space. The treatment can also be used to impart electrical conductivity to anodized housings of computers, medical electronic instruments, telephoneexchange equipment, and other terrestrial electronic equipment vulnerable to electrostatic discharge. The electrical resistivity of a typical anodized aluminum surface layer lies between 10(exp 11) and 10(exp 13) Omega-cm. To suppress electrostatic discharge, it is necessary to reduce the electrical resistivity significantly - preferably to < or = 10(exp 9) Omega-cm. The present treatment does this. The treatment is a direct electrodeposition process in which the outer anodized surface becomes covered and the pores in the surface filled with a transparent, electrically conductive metal oxide nanocomposite. Filling the pores with the nanocomposite reduces the transverse electrical resistivity and, in the original intended outer-space application, the exterior covering portion of the nanocomposite would afford the requisite electrical contact with the outer-space plasma. The electrical resistivity of the nanocomposite can be tailored to a value between 10(exp 7) and 10(exp 12) Omega-cm. Unlike electrically conductive paint, the nanocomposite becomes an integral part of the anodized aluminum substrate, without need for adhesive bonding material and without risk of subsequent peeling. The electrodeposition process is compatible with commercial anodizing production lines. At present, the electronics industry uses expensive, exotic, electrostaticdischarge- suppressing finishes: examples include silver impregnated anodized, black electroless nickel, black chrome, and black copper. In comparison with these competing finishes, the present nanocomposite finishes are expected to cost 50 to 20 percent less and to last longer.
Nguyen, Trung Hung↗
SiC-Based Miniature High-Temperature Cantilever Anemometer
The figure depicts a miniature cantilever-type anemometer that has been developed as a prototype of compact, relatively nonintrusive anemometers that can function at temperatures up to 600 C and that can be expected to be commercially mass-producible at low cost. The design of this anemometer, and especially the packaging aspect of the design, is intended to enable measurement of turbulence in the high-temperature, high-vibration environment of a turbine engine or in any similar environment. The main structural components of the anemometer include a single-crystal SiC cantilever and two polycrystalline SiC clamping plates, all made from chemical-vapor-deposited silicon carbide. Fabrication of these components from the same basic material eliminates thermal-expansion mismatch, which has introduced spurious thermomechanical stresses in cantilever-type anemometers of prior design. The clamping plates are heavily oxidized to improve electrical insulation at high temperature. A cavity that serves as a receptacle for the clamped end of the cantilever is etched into one end of one clamping plate. Trenches that collectively constitute a socket for a multipin electrical plug (for connection to external electronic circuitry) are etched into the opposite end of this clamping plate. Metal strips for electrical contact are deposited on one face of the other clamping plate. Piezoresistive single-crystal SiC thin-film strain gauges are etched in the n-type SiC epilayer in a Wheatstone-bridge configuration. Metal contact pads on the cantilever that extend into the clamping-receptacle area, are obtained by deposition and patterning using standard semiconductor photolithography and etching methods. The cantilever and the two clamping plates are assembled into a sandwich structure that is then clamped in a stainless-steel housing. The Wheatstone- bridge carrying SiC cantilever with the metal contact pads on the piezoresistors is slid into the receptacle in the bottom clamping plate. The top clamping plate is brought into contact with the bottom plate so that the narrow section of the metal strips on the top clamp plate aligns with the metal contact pads on the cantilever. When the parts are clamped together, the metal strips provide electrical connections between the Wheatstone-bridge contact points and the sides the trenches that constitute the socket for the multipin electrical plug. Hence, to connect the Wheatstone bridge to external circuitry for processing of the anemometer readout, one need only insert the plug in the socket. In operation, the cantilever end of the stainless-steel housing is mounted flush with an engine wall and the unclamped portion of the cantilever is exposed into the flow. The cantilever is deflected in direct proportion to the force induced by component of flow parallel to the engine wall and perpendicular to the broad exposed face of the cantilever. The maximum strain on the cantilever occurs at the clamped edge and is measured by the piezoresistors, which are located there. The corresponding changes in resistance manifest themselves in the output of the Wheatstone bridge.
Okojie, Robert S.↗
Direct‐Write Printed Contacts to Layered and 2D Materials
Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and 2D materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS 2 (semiconductor), Bi-2212 (superconductor), and Fe 5 GeTe 2 (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.
2D materials↗
One-dimensional edge contact to encapsulated MoS 2 with a superconductor
Establishing ohmic contact to van der Waals semiconductors such as MoS 2 is crucial to unlocking their full potential in next-generation electronic devices. Encapsulation of few layer MoS 2 with hBN preserves the material’s electronic properties but makes electrical contacts more challenging. Progress toward high quality edge contact to encapsulated MoS 2 has been recently reported. Here, we evaluate a contact methodology using sputtered MoRe, a type II superconductor with a relatively high critical field and temperature commonly used to induce superconductivity in graphene. We find that the contact transparency is poor and that the devices do not support a measurable supercurrent down to 3 K, which has ramifications for future fabrication recipes.
2D materials↗
Design optimization of semiconductor piezoresistors with Schottky diode contacts
A modeling theory is developed to predict the performance of piezoresistors which incorporate Schottky diode electrical contacts. This new theory allows the design of high performance gauges which can be fabricated using NonLithographically-Based Microfabrication (NLBM) techniques. These semiconductor piezoresistors can be designed in customizable sizes and fabricated in parallel in order to integrate position sensing into MEMS flexural positioners. Customizable nanopositioning platforms will enable advances in a range of nano-scale fabrication and metrology applications. A semiconductor piezoresistor with Schottky diode contacts was fabricated and attached to a titanium flexure. This device is shown to match predicted electrical performance within about 8% and to show a gauge factor of 116, within 2% of the predicted value. Performance limits for Schottky diode semiconductor piezoresistors are identified to be about 127dB full noise dynamic range for a quarter bridge over a 10kHz sensor bandwidth on a 600µm width titanium flexure, making them ideal for sensing on meso-/micro-scale flexural positioners. Methods of reaching these performance bound are suggested and their impact on the sensor dynamic range are studied.
42 ENGINEERING↗
Sinterless contacts to shallow junction InP solar cells
In the past, the achievement of good electrical contact to InP has inevitably been accompanied by mechanical degradation of the InP itself. Most contact systems require heat treatment after metal deposition that results in the dissolution of substantial amounts of InP into the metallization. Devices such as the solar cell, where shallow junctions are the rule, can be severely degraded if the damage to the semiconductor substrate is not precisely controlled. Two contact systems are described that provide low contact resistance to InP solar cells that do not require subjecting the current carrying metallization to a post deposition sintering process. It is shown that these two systems, one nickel based and the other silver based, provide contact resistivity values in the low 10(exp -6) ohm sq cm range, as fabricated, without the need for sintering.
Weizer, V. G.↗
Isolator/retainer for connectors
Double-ended cap holds mating plugs and receptacle, preventing electrical contact between them when not in use. Cap maintains continuous electrical ground between plug and receptacle protecting against electromagnetic-interference pickup. Device is also useful for isolation of sensitive circuits from each other during storage, transit, or testing.
Alpenia, J. L.↗
Compact Interconnection Networks Based on Quantum Dots
Architectures that would exploit the distinct characteristics of quantum-dot cellular automata (QCA) have been proposed for digital communication networks that connect advanced digital computing circuits. In comparison with networks of wires in conventional very-large-scale integrated (VLSI) circuitry, the networks according to the proposed architectures would be more compact. The proposed architectures would make it possible to implement complex interconnection schemes that are required for some advanced parallel-computing algorithms and that are difficult (and in many cases impractical) to implement in VLSI circuitry. The difficulty of implementation in VLSI and the major potential advantage afforded by QCA were described previously in Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), NASA Tech Briefs, Vol. 25, No. 10 (October 2001), page 42. To recapitulate: Wherever two wires in a conventional VLSI circuit cross each other and are required not to be in electrical contact with each other, there must be a layer of electrical insulation between them. This, in turn, makes it necessary to resort to a noncoplanar and possibly a multilayer design, which can be complex, expensive, and even impractical. As a result, much of the cost of designing VLSI circuits is associated with minimization of data routing and assignment of layers to minimize crossing of wires. Heretofore, these considerations have impeded the development of VLSI circuitry to implement complex, advanced interconnection schemes. On the other hand, with suitable design and under suitable operating conditions, QCA-based signal paths can be allowed to cross each other in the same plane without adverse effect. In principle, this characteristic could be exploited to design compact, coplanar, simple (relative to VLSI) QCA-based networks to implement complex, advanced interconnection schemes. The proposed architectures require two advances in QCA-based circuitry beyond basic QCA-based binary-signal wires described in the cited prior article. One of these advances would be the development of QCA-based wires capable of bidirectional transmission of signals. The other advance would be the development of QCA circuits capable of high-impedance state outputs. The high-impedance states would be utilized along with the 0- and 1-state outputs of QCA.
Fijany, Amir↗
Low frequency electrical noise across contacts between a normal conductor and superconducting bulk YBa2Cu3O7
Virtually every device that makes use of the new ceramic superconductors will need normal conductor to superconductor contacts. The current-voltage and electrical noise characteristics of these contacts could become important design considerations. I-V and low frequency electrical noise measurements are presented on contacts between a normal conductor and superconducting polycrystalline YBa2Cu3O7. The contacts were formed by first sputtering gold palladium pads onto the surface of the bulk superconductor and then using silver epoxy to attach a wire(s) to each pad. Voltage across the contacts was found for small current densities. The voltage spectral density, S sub v(f), a quantity often used to characterize electrical noise, very closely followed an empirical relationship given by S sub v(f) = C(VR)sq/f, where V is the DC voltage across the contact, R is the contact resistance, F is frequency, and C is a contant found to be 2 x 10(exp -10)/Omega sq at 78 K. This relationship was found to be independent of contact area, contact geometry, sample fabrication technique, and sample density.
Hall, J.↗
Low frequency electrical noise across contacts between a normal conductor and superconducting bulk YBa2Cu3O7
Virtually every device that makes use of the new ceramic superconductors will need normal conductor to supercondutor contacts. The current-voltage and electrical noise characteristics of these contacts could be become important design considerations. I-V and low frequency electrical noise measurements are presented on contacts between a normal conductor and superconducting polycrystalline YBa2Cu3O7. The contacts were formed by first sputtering gold palladium pads onto the surface of the bulk superconductor and then using silver epoxy to attach a wire(s) to each pad. Voltage across the contacts was found for small current densities. The voltage spectral density, S sub v(f), a quanity often used to characterize electrical noise, very closely followed an empirical relationship given by, S sub v(f) = C(VR)sq/f, where V is the DC voltage across the contact, R is the contact resistance, F is frequency, and C is a contant found to be 2 x 10(exp -10)/Omega sq at 78 K. This relationship was found to be independent of contact area, contact geometry, sample fabrication technique, and sample density.
Hall, J.↗
Revealing the intrinsic transport properties of antiperovskite Sr 3 SnO thin films
A topologically non-trivial band structure and reports of superconductivity have motivated significant investigation into the transport properties of the antiperovskite oxide Sr 3 SnO. Phase-pure films of Sr 3 SnO can be grown by molecular beam epitaxy, but they do not have the required extremely high hole-doping densities (>1 × 10 21 cm –3 ) for which superconductivity has been observed in bulk materials. To date, high hole-doping densities have been achieved via inducing strontium deficiency, which inevitably results in impurity phases. Here, we show that indium acts as an effective hole dopant in Sr 3 SnO and can be used to achieve high hole doping densities in stoichiometric films. Films with carrier densities as high as 1.5 × 10 21 cm –3 remain non-superconducting. We, therefore, suggest that Sr 3 SnO is probably not an intrinsic superconductor. A second question addressed in this work is the measurement of the intrinsic electrical transport properties of Sr 3 SnO, given its rapid degradation in air. We show that even in inert atmospheres, reducing the time needed for establishing electrical contacts and protecting the Sr 3 SnO film result in improved electrical properties. Here, we demonstrate low carrier density films (4 × 10 18 cm –3 ) with carrier mobilities of 400 cm 2 V –1 s –1 at 10 K.
36 MATERIALS SCIENCE↗
Characterization of Electronic Materials HgZnSe and HgZnTe Using Innovative and Conventional Techniques
HgZnSe and HgZnTe are electronic materials of interest for potential IR detector and focal plane array applications due to their improved strength and compositional stability over HgCdTe, but they are difficult to grow on Earth and to fully characterize. Conventional contact methods of characterization, such as Hall and van der Paw, although adequate for many situations are typically labor intensive and not entirely suitable where only very small samples are available. To adequately characterize and compare properties of electronic materials grown in low earth orbit with those grown on Earth, innovative techniques are needed that complement existing methods. This paper describes the implementation and test results of a unique non-contact method of characterizing uniformity, mobility, and carrier concentration together with results from conventional methods applied to HgZnSe and HgZnTe. The innovative method has advantages over conventional contact methods since it circumvents problems of possible contamination from alloying electrical contacts to a sample and also has the capability to map a sample. Non- destructive mapping, the determination of the carrier concentration and mobility at each place on a sample, provides a means to quantitatively compare, at high spatial resolution, effects of microgravity on electronic properties and uniformity of electronic materials grown in low-Earth orbit with Earth grown materials. The mapping technique described here uses a 1mm diameter polarized beam of radiation to probe the sample. Activation of a magnetic field, in which the sample is placed, causes the plane of polarization of the probe beam to rotate. This Faraday rotation is a function of the free carrier concentration and the band parameters of the material. Maps of carrier concentration, mobility, and transmission generated from measurements of the Faraday rotation angles over the temperature range from 300K to 77K will be presented. New information on band parameters, obtained by combining results from conventional Hall measurements of the free carrier concentration with Faraday rotation measurements, will also be presented. One example of how this type of information was derived is illustrated in the following figure which shows Faraday rotation vs wavelength modeled for Hg(l-x)ZnxSe at a temperature of 300K and x=0.07. The plasma contribution, total Faraday rotation, and interband contribution to the Faraday rotation, are designated in the Figure as del(p), FR tot, and del(i) respectively. Experimentally measured values of FR tot, each indicated by + , agree acceptably well with the model at the probe wavelength of 10.6 microns. The model shows that at the probe wavelength, practically all the rotation is due to the plasma component, which can be expressed as delta(sub p)= 2pi(e(sup 3))NBL/c(sup 2)nm*(sup 2) omega(sup 2). In this equation, delta(sub p) is the rotation angle due to the free carrier plasma, N is the free carrier concentration, B the magnetic field strength, L the thickness of the sample, n the index of refraction, omega the probe radiation frequency, c the speed of light, e the electron charge, and m* the effective mass. A measurement of N by conventional techniques, combined with a measurement of the Faraday rotation angle allows m* to be accurately determined since it is an inverse square function.
Tanton, George↗