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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8

Micro-inverter assembly for use in a photovoltaic system and method of making same

A micro-inverter assembly for use in a photovoltaic system includes a housing, a direct current (DC)-to-alternating current (AC) micro-inverter disposed within the housing, and a DC connector electrically coupled to the DC-to-AC micro-inverter. The DC connector is positioned within a recess formed in a bottom surface of the housing such that at least one electrical contact of the DC connector is accessible from outside the housing. According to alternative embodiments, the DC connector comprises a plug-and-play connector constructed for one of a rotational engagement and a translational engagement with a DC connector of a photovoltaic (PV) panel.

Cioffi, Philip Michael↗

Fabrication of stable electrode/diffusion barrier layers for thermoelectric filled skutterudite devices

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ·cm2.

Jie, Qing↗

Electrode designs for high energy density, efficiency, and capacity in rechargeable alkaline batteries

A secondary alkaline battery includes an anode, a cathode, and an electrolyte. The cathode includes a current collector, a cathode mixture in electrical contact with the current collector. The cathode mixture comprises: manganese oxide, a copper compound comprising copper, a salt of copper, an alloy thereof, or any combination thereof, a bismuth compound comprising bismuth, a salt of bismuth, or any combination thereof, and a conductive carbon. The secondary alkaline battery can also include a first composition in contact with the current collector and disposed between the current collector and the cathode mixture that includes copper, a salt of copper, an alloy thereof, or a combination thereof.

Yadav, Gautam G.↗

Optoelectronic devices and methods of making the same

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.

Palmstrom, Axel Finn↗

Partial discharge suppression in high voltage solid-state devices

Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Sampayan, Stephen↗

Wire rivet

A rivet assembly for securing a wire in electrical communication with a substrate having a hollow cylindrical body with a first opening at a proximal end and a second opening at a distal end. The rivet assembly further includes a wire with a portion in electrical communication with the cylindrical body. The rivet assembly yet further includes a compression mechanism configured for use selectively compressing the cylindrical body along an axial direction. Compression of the cylindrical body can cause diametric expansion of an outer diameter of the cylindrical body to retain the cylindrical body within a substrate. The rivet assembly additionally includes wire retention structure configured for holding the wire in electrical contact with the compressed cylindrical body.

Briggs, Timothy↗

Nanostructured devices having perovskite nanocrystal layer for photodetection, optical memory, and neuromorphic functionality

The present disclosure relates to a device that includes a perovskite nanocrystal (NC) layer, a charge separating layer, an insulating layer, a gate electrode, a cathode, and an anode, where the charge separating layer is positioned between the perovskite NC layer and the insulating layer, the insulating layer is positioned between the charge separating layer and the gate electrode, and the cathode and the anode both electrically contact the charge separating layer and the insulating layer. In some embodiments of the present disclosure, the device may be configured to operate as at least one of a photodetector, an optical switching device, and/or a neuromorphic switching device.

Blackburn, Jeffrey Lee↗

Redesigning Photoelectrodes So They Can Work in the Light and Dark

Unassisted photoelectrochemical (PEC) reactions, such as H2 generation and CO2 reduction, are limited by the durability of the immersed photoelectrode. Small band gap semiconductors, like Si, are efficient at utilizing a large portion of the solar spectrum but are not stable in aqueous environments without protection. While great strides have been made to improve stability under constant illumination, dark stability remains relatively unexamined and presents great challenges for durable PEC systems. Cathodic protection is an established electrochemical method for preventing metal electrode degradation in harsh conditions. Similar protection strategies cannot be applied to traditional two-terminal (2T) semiconductor photoelectrodes because of their inability to pass reverse bias current in the dark. New, three-terminal (3T) photovoltaic (PV) architectures introduce additional degrees of freedom in traditional 2T PEC operations by adding an extra electrical contact for an alternative low resistance path to protect the photoelectrode and drive electrochemical reactions, even in the dark. Here, we investigate bare 3T Si PV devices operating as photocathodes in aqueous methyl viologen electrolyte. The 3T architecture provides additional capabilities to PEC systems such as cathodic protection, the ability to drive reactions with or without illumination, and in situ switching between different operational modes. We show that 3T-based Si photocathodes maintain PEC activity after several hours of light/dark cycling. This work helps advance PEC use in real-world conditions where variable illumination must be considered.

cathodic protection↗

High temperature electrical property measurements of ceramics

Emerging applications in energy and aerospace systems require high quality data on the high temperature electrical properties of ceramics, particularly oxides, to guide material selection, design, and modeling. This presentation demonstrates the functionality of a specially designed sample fixture that enables electrical measurements to be conducted up to temperatures as high as 1600°C. Utilizing the mismatch in the coefficient of thermal expansion between two materials, a purely mechanical method for establishing electrical contact in the van der Pauw geometry is used to measure the bulk resistivity of ceramic materials. Measurements conducted on a number of common high temperature materials will be presented, including 20 mol % Gd-doped cerium oxide. Measurements are performed using multiple techniques and compared to literature values finding excellent agreement. The approach described in this work enables the van der Pauw method to be applied to many ceramic materials over a wide range of temperatures and environments.

Cann, David P.↗

Partial discharge suppression in high voltage solid-state devices

Devices, methods and techniques are disclosed to suppress electrical discharge and breakdown in insulating or encapsulation material(s) applied to solid-state devices. In one example aspect, a multi-layer encapsulation film includes a first layer of a first dielectric material and a second layer of a second dielectric material. An interface between the first layer and the second layer is configured to include molecular bonds to prevent charge carriers from crossing between the first layer and the second layer. The multi-layer encapsulation configuration is structured to allow an electrical contact and a substrate of the solid-state device to be at least partially surrounded by the multi-layer encapsulation configuration.

Sampayan, Stephen↗

Secondary zinc-manganese dioxide batteries for high power applications

In an embodiment, a secondary Zn—MnO 2 battery comprises a battery housing, a MnO 2 cathode, a Zn anode, and an electrolyte solution. The MnO 2 cathode, the Zn anode, and the electrolyte solution are disposed within the battery housing, and the MnO 2 cathode comprises a MnO 2 cathode mixture and a current collector. The MnO 2 cathode mixture is in electrical contact with at least a portion of an outer surface of the current collector, and the MnO 2 cathode has a porosity of from about 5 vol. % to about 90 vol. %, based on the total volume of the MnO 2 cathode mixture of the MnO 2 cathode.

Ingale, Nilesh↗

Thermal, mechanical, and electrical properties of LSCo/mullite composite contact materials for solid oxide fuel cells

Lanthanum strontium cobaltite (LSCo) is considered as a good candidate cathode contact material for solid oxide fuel cells, due to high electrical conductivity. However, LSCo has a very large coefficient of thermal expansion (CTE) than the cells and metallic interconnects. As a result, poor mechanical stability is expected during thermal cycling. To minimize the CTE mismatch, we investigate a composite approach involving mixing LSCo with an inert material of low CTE, such as mullite at volume fractions from 0.1 to 0.4. Composite’s CTE shows a decreasing trend with increasing mullite volume fractions, and is consistent with model predictions. X-ray powder diffraction analysis of sintered LSCo/mullite composites exhibits no presence of other phases for samples aged for 500h at 800oC, indicating chemical compatibility. Electrical conductivity by a 4-pt method shows a decreasing trend with increasing mullite content. Contact strength of as-sintered and thermally cycled samples show that only the composite with 0.4 volume fraction has a measurable strength; the other composites have no strength. Overall, the composite approach is demonstrated in the LSCo/mullite system to lower the CTE and hence achieve thermal cycle stability. The addition of the inert phase to the LSCo matrix; however, also reduces the electrical conductivity.

Contact materials, LSCo, mullite, CTE, electrical ↗

Defect Characterization of Monocrystalline Silicon Solar Cells with Polysilicon Passivated Contact Using Electrically-Detected Magnetic Resonance (EDMR) Spectroscopy

As the c-Si based solar cell efficiencies are approaching over 26%, it is becoming critical to characterize the low concentrations of the defects – as low as 10^10-10^11 cm-3 (for e.g., iron contamination in high-lifetime Ga-doped wafers3 and n-type wafers), and further reduce them. Also, atomistic level understanding of the mechanisms of the low concentration process-induced-defects and reliability limiting defects (such as light and elevated temperature induced degradation, surface passivation degradation) is needed to design the mitigation strategies. The conventional characterization techniques are limited due to their detection limitations. Some of the techniques based on lifetime spectroscopies can still be used for low concentration characterization however, they are based on estimations and theoretical models and hence, indirect and cannot fully reveal information about the microscopic mechanism of the defects. Thus, we present the application of an ultrasensitive magnetic resonance-based technique for the direct spectroscopic detection of the defects in Si PV - electrically detected magnetic resonance (EDMR). In this work, we aim to focus on establishing a process flow for fabrication of minicells with (miniature replica of the larger-area cells) and setting up the routine for EDMR measurements on them with the EDMR instrumentation capability at NREL. For the EDMR measurements, sample size is limited by the dimensions of sample holder tube (width less than 3.2 mm, active area - 20 mm). Thus, we have designed c-Si based minicells with polysilicon (poly-Si) passivated contacts same as the larger-area cells that we fabricate in our group at NREL. We also modified our minicell process flow for fabricating the textured minicells for preserving the texture during processing and taking care of the laser-ablation edge damage which can significantly affect the performance of such small devices. We have achieved comparable performance on these newly fabricated minicells as that of our 4 cm2 devices with same structure (comparable VOC, JSC, FF). We also conducted EDMR measurements on the minicells and observed a distinct EDMR signal at g-value ~2.005 at temperatures 30K and above, as shown in Fig. 2. We associate this signal to the presence of silicon dangling bonds based on the g-value. We also observed an EDMR signal at g-value ~1.998 at temperature ~5K. The origin of this signal is still being investigated. Thus, we show the proof of concept of minicells and EDMR measurements with which we now aim to study some of the unknown defects in silicon solar cell devices.

EDMR↗

Electrical meter probe contact verification system

A system and method verifies continuity with and measures voltage across a circuit under test (in some instances simultaneously) using two or more test probes. Two or more probe continuity circuits measure continuity through the test probes by injecting a test current through and measuring a processed test current received at each of the plurality of test probes. The probe continuity circuits measure the respective processed test current rendered by the test current flowing through the test circuit at each test probe. A voltmeter measures the potential difference across the test probes.

42 ENGINEERING↗

Moldable photovoltaic solar cell module

A moldable photovoltaic module is provided. The module includes a flexible polymeric flex-circuit substrate having an electrically conductive printed wiring pattern and solder pads defined on it. Small photovoltaic cells are affixed to the flex-circuit substrate by back-surface contacts in electrical contact with the solder pads. At least one thermoformable polymeric film is joined to the flex-circuit substrate. Each said solder pad comprises a solder composition that, after an initial melt, has a melting point that lies above at least a portion of the temperature range for thermoforming the polymeric film.

14 SOLAR ENERGY↗

Fabrication and Performance Evaluation of Double-Sided Copper Nanowire Arrays as Thermal and Electrical Interfacial Layers

Reducing contact interface thermal and electrical resistances is in great demand across various industries, particularly in the semiconductor industry. This study introduces an approach using double-sided copper nanowire (Cu NW) arrays on copper sheets as both thermal and electrical interfacial layers, designed to effectively accommodate the topographical inconsistencies between contact surfaces. Further, experimental outcomes reveal a significant reduction in thermal contact resistance (TCR), with a value of 2.5 mm 2 K W –1 , thereby exceeding the efficiency of reported nanostructural thermal interface materials (TIMs). Additionally, when utilized as an electrical interfacial layer, these double-sided Cu NWs arrays dramatically reduced electrical contact resistance (ECR), outperforming traditional conductive grease in applications necessitating separable bonding, though showing comparable performance to costly silver-based conductive epoxies required for permanent, inseparable bonds. The promising results of the double-sided Cu NWs arrays in reducing both TCR and ECR, confirmed by finite element simulation, highlight their substantial potential in advancing TIMs and electrical interconnection applications across various sectors.

42 ENGINEERING↗

Railroad block/grade crossing warning system

A train safety system comprises a cable connected to at least two conducting contacts, an electrical load between said two conducting magnetic contacts, and a DC track circuit associated with railroad tracks wherein the at least two conducting plates can be connected to each of the railroad rails in order to shunt the DC track circuit and alert oncoming trains of fouling of the tracks or crossing ahead.

42 ENGINEERING↗