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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Electrical Conductivity and Sound Velocities of Talc Under High Pressure and High Temperature Conditions and Application to the Subducting Cocos Plate

Talc is expected to be an important water carrier in Earth's upper mantle, and understanding its electrical and seismic properties under high pressure and temperature conditions is required to detect possible talc-rich regions in subduction zones imaged using geophysical observations. Here, we conducted acoustic and electrical experiments on natural talc aggregates at relevant pressure-temperature conditions. Compressional wave velocity (V p ) was measured using ultrasonic interferometry in a Paris-Edinburgh press at pressures up to 3.4 GPa and temperatures up to 873 K. Similar Vp values are obtained regardless of the initial crystallographic preferred orientation of the samples, which can be explained by talc grain reorientation during the experiment, with the (001) plane becoming perpendicular to the uniaxial compression axis. Electrical conductivity of the same starting material was determined using impedance spectroscopy in a multi-anvil press up to 6 GPa and 1263 K. Two conductivity jumps are observed, at ∼860–1025 K and ∼940–1080 K, depending on pressure, and interpreted as talc dehydroxylation and decomposition, respectively. Electrical anisotropy is observed at low temperature and decreases with increasing pressure (∼10 at 1.5 GPa and ∼2 at 3.5 GPa). Comparison of acoustic and electrical results with geophysical observations in central Mexico supports the presence of a talc-bearing layer atop the subducted Cocos plate.

Cocos plate↗
DOE OSTI2026

Spatiotemporal Thermal Coupling in VO 2 Device Arrays

Correlated oxides such as VO 2 exhibit an electrically driven insulator–metal transition (IMT) that underlies their promise for neuromorphic and memory devices. Yet the IMT is not a uniform bulk process but a spatiotemporal phenomenon in which local heating nucleates filaments, contracts or dissolves them with the electric field, and couples to the environment. In this work, we directly image the VO 2 IMT dynamics by mid-wave infrared, thermography synchronized with electrical transport, resolving device temperature with micrometer spatial and microsecond temporal resolution. At the single-device level, we capture the full cycle of filament nucleation, contraction, and relaxation during current/voltage-driven resistive switching. At the array level, we show that heat propagates across etched gaps with an effective length scale of ∼131 µm, enabling cooperative behaviors among electrically isolated devices. Short-range distanced devices exhibit mutual filament attraction and sequential dissolution, while long-range distanced devices differentiate into distinct roles: drivers that initiate switching, cooperative responders that undergo assisted self-oscillations, and passive reporters that record the thermal field. Furthermore, these results reframe thermal crosstalk, long regarded as parasitic, as an intrinsic coupling channel and design principle for organizing collective switching behaviors, with direct implications for emergent circuit functionality in neuromorphic and unconventional computing architectures.

coupling↗
DOE OSTI2025

Optical imaging of flavor order in flat band graphene

Abstract Spin- and valley flavor polarization plays a central role in the many-body physics of flat band graphene, with Fermi surface reconstruction — often accompanied by quantized anomalous Hall and superconducting state — observed in a variety of experimental systems. Here we describe an optical technique that sensitively and selectively detects flavor textures via the exciton response of a proximal transition metal dichalcogenide layer. Through a systematic study of rhombohedral and rotationally faulted graphene bilayers and trilayers, we show that when the semiconducting dichalcogenide is in direct contact with the graphene, the exciton response is most sensitive to the large momentum rearrangement of the Fermi surface, providing information that is distinct from and complementary to electrical compressibility measurements. The wide-field imaging capability of optical probes allows us to obtain spatial maps of flavor order with high throughput, and with broad temperature and device compatibility. Our work helps pave the way for optical probing and imaging of flavor orders in flat band graphene systems.

Science & Technology - Other Topics↗
DOE OSTI2021

Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation

Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO 3 . Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The response of sub-surface domains is studied by FIB cross-sectioning, enabling imaging in the direction perpendicular to the applied electric field. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Dielectrics Under Extreme Electric Fields: In Situ Studies on Nanoscale Mechanisms (Final Technical Report)

The lack of materials that can function reliably under extreme electric fields is a critical roadblock to achieving higher energy efficiency and extended service lifetime of devices in electricity generation, transmission, and consumption. Materials typically fail at two or three orders of magnitude below their theoretical dielectric breakdown strength. Identifying the origins of premature dielectric breakdown using state-of-the-art characterization tools will, therefore, enable the design and discovery of transformational materials capable of approaching their intrinsic limits. The vast improvement in the resolution power of imaging tools, combined with the recently developed in situ electric biasing technique, has made high resolution observations of dielectric breakdown as it happens possible. The overall goal of the project is to directly image the dynamic processes of defect formation, accumulation, and interaction with preexisting defects (e.g., dislocations, domain walls, and grain boundaries in crystalline dielectric films) under electric fields up to 1,000 MV/m with a temporal resolution better than 5 microseconds. Using the newly acquired, custom-made Hysitron PI95 transmission electron microscopy (TEM) specimen holder, in situ TEM observations of breakdown at the sub nanometer resolution will be made on representative dielectric compounds with progressive complexities: the linear dielectric SiO 2 , CuO, and TiO 2 , the ferroelectric BaTiO 3 nanocrystals and nanocubes. Through direct observation of the breakdown event at high spatial and temporal resolutions, the nanoscale mechanisms for the failure of dielectrics under intense electric fields will be identified. The results of the project will be applied to the design and processing of new dielectric materials with higher efficiency, improved reliability, and a prolonged lifetime. Such new dielectrics are urgently needed for modernizing energy infrastructures.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Underlying Mechanisms of Hot Carrier-Driven Reactivity on Bimetallic Nanostructures

Bimetallic nanostructures exhibit unique catalytic activity and selectivity that is not evident for their monometallic analogs. Such nanostructures contain plasmonic metals, such as gold or silver, that afford highly efficient harvesting of electromagnetic radiation and its conversion into hot carriers. These highly energetic species are transferred to the catalytic metal sub-component of the bimetallic nanostructure, where a large spectrum of chemical reactions may be catalyzed. The strength of the electric field and the interplay between catalytic and plasmonic metals at the nanoscale are thus critically important for the catalytic activity of bimetallic nanostructures. In this study, we investigate the relationship between the catalytic activity and local electric fields sustained on the surface of gold-palladium (Au@PdNPs) and gold-platinum (Au@PtNPs) nanoplates using tip-enhanced Raman spectroscopy (TERS). We image the spatially varying magnitudes of rectified (DC) local electric fields on the surface of these nanostructures and compare them to fields sustained on the surface of monometallic nanoplates. We find substantially larger electric field magnitudes on Au@PdNPs and Au@PtNPs as compared to their monometallic analogs. These findings suggest that catalytic efficiency of bimetallic nanostructures may be mediated and potentially tuned through precise control of electric fields sustained on their surfaces.

Li, Zhandong↗
DOE OSTI2024

In‐Operando Spatiotemporal Imaging of Coupled Film‐Substrate Elastodynamics During an Insulator‐to‐Metal Transition

Abstract The drive toward non‐von Neumann device architectures has led to an intense focus on insulator‐to‐metal (IMT) and the converse metal‐to‐insulator (MIT) transitions. Studies of electric field‐driven IMT in the prototypical VO 2 thin‐film channel devices are largely focused on the electrical and elastic responses of the films, but the response of the corresponding TiO 2 substrate is often overlooked, since it is nominally expected to be electrically passive and elastically rigid. Here, in‐operando spatiotemporal imaging of the coupled elastodynamics using X‐ray diffraction microscopy of a VO 2 film channel device on TiO 2 substrate reveals two new surprises. First, the film channel bulges during the IMT, the opposite of the expected shrinking in the film undergoing IMT. Second, a microns thick proximal layer in the substrate also coherently bulges accompanying the IMT in the film, which is completely unexpected. Phase‐field simulations of coupled IMT, oxygen vacancy electronic dynamics, and electronic carrier diffusion incorporating thermal and strain effects suggest that the observed elastodynamics can be explained by the known naturally occurring oxygen vacancies that rapidly ionize (and deionize) in concert with the IMT (MIT). Fast electrical‐triggering of the IMT via ionizing defects and an active “IMT‐like” substrate layer are critical aspects to consider in device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Imaging Arrangements of Discrete Ions at Liquid–Solid Interfaces

The individual and collective behavior of ions near electrically charged interfaces is foundational to a variety of electrochemical phenomena encountered in biology, energy, and the environment. While many theories have been developed to predict the interfacial arrangements of counterions, direct experimental observations and validations have remained elusive. Utilizing cryo-electron microscopy, here we directly visualize individual counterions and reveal their discrete interfacial layering. Comparison with simulations suggests the strong effects of finite ionic size and electrostatic interactions. We also uncover correlated ionic structures under extreme confinement, with the channel widths approaching the ionic diameter (~1 nm). Finally, our work reveals the roles of ionic size, valency, and confinement in determining the structures of liquid–solid interfaces and opens up new opportunities to study such systems at the single-ion level.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

STEM Ptychographic Holography of Electric and Magnetic Potentials

The development of fast an efficient direct electron imaging detectors have enabled the advancement of phase-imaging techniques in STEM such as iterative ptychography. As beneficial as these techniques are to imaging phase objects, the information recorded in the raw data is due to phase gradients across the probe, so it can be challenging to reconstruct slowly varying phase at lower spatial frequencies such as those induced by electric or magnetic potentials within the specimen. STEM holography [1,2] is an interferometric 4D-STEM technique where electrons in the beam are coherently divided into a superposition of two or more spatially separated probes which are then scanned over the specimen. For example, in a two-beam superposition, the two probes form overlapping bright field discs at the detector which then interfere (left of Fig. 1). Furthermore, if one probe passes through vacuum while the other transmits through the specimen, the resulting relative phase shift can be measured by recording shifts in the interference pattern. STEM holography is thus directly sensitive to the phase of the probe relative to the reference beam, and this phase can be measured regardless of the convergence angle of the probe, unlike single beam ptychography.

Biological Sciences↗
DOE OSTI2022

Charge Transport in Twisted Organic Semiconductor Crystals of Modulated Pitch

Many molecular crystals (approximately one third) grow as twisted, helicoidal ribbons from the melt, and this preponderance is even higher in restricted classes of materials, for instance, charge-transfer complexes. Previously, twisted crystallites of such complexes present an increase in carrier mobilities. In this paper, the effect of twisting on charge mobility is better analyzed for a monocomponent organic semiconductor, 2,5-bis(3-dodecyl-2-thienyl)-thiazolo[5,4-d]thiazole (BDT), that forms twisted crystals with varied helicoidal pitches and makes possible a correlation of twist strength with carrier mobility. Films are analyzed by X-ray scattering and Mueller matrix polarimetry to characterize the microscale organization of the polycrystalline ensembles. Carrier mobilities of organic field-effect transistors are five times higher when the crystals are grown with the smallest pitches (most twisted), compared to those with the largest pitches, along the fiber elongation direction. A tenfold increase is observed along the perpendicular direction. Simulation of electrical potential based on scanning electron microscopy images and density functional theory suggests that the twisting-enhanced mobility is mainly controlled by the fiber organization in the film. A greater number of tightly packed twisted fibers separated by numerous smaller gaps permit better charge transport over the film surface compared to fewer big crystallites separated by larger gaps.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Characterization of front contact degradation in monocrystalline and multicrystalline silicon photovoltaic modules following damp heat exposure

Reliability and durability tests play a key role in the photovoltaic (PV) industry by minimizing potential failure risks for both existing and new cell and module technologies. In this work, a detailed study of contact degradation in monocrystalline and multicrystalline PV modules is performed. The modules are subjected to a sequence of damp heat (DH) exposures followed by electrical characterization after each step. Electroluminescence (EL) imaging shows different darkening patterns for monocrystalline modules compared to multicrystalline modules; the former shows darkening near the busbars and the latter shows it across virtually the entire cell surface. The primary loss mechanism is confirmed to be resistive after comparing the current-voltage (I–V) characteristics at each DH exposure step. Representative samples have been cored out from both the degraded modules and controls for materials characterization to gain further insights into the degradation mechanism. Top-down and cross-sectional scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), and top-down high-resolution X-ray photoelectron spectroscopy (XPS) analysis performed on the cored samples confirm the degradation is due to metallization corrosion. Our study suggests that the difference in the darkening pattern can most likely be attributed to the different silver paste composition used for contacting each cell technology, particularly the composition of the glass frit.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Mapping of inhomogeneous quasi-3D electrostatic field in electro-optic materials

Abstract This paper describes a new method for direct measurement and evaluation of the inhomogeneous electrostatic vector field with translational symmetry in electro-optic materials exhibiting the Pockels effect. It is based on the evaluation of maximum transmittance of low intensity light passing through a sample under a voltage bias. Here, the sample is located between rotating crossed polarizers, and camera images are obtained at each point to determine the electric field. The evaluation procedure is demonstrated using data acquired on a CdZnTeSe quasi-hemispheric semiconductor gamma-ray detector. In addition to CdTe-related compounds, the method can be used for various other materials showing $$\overline{4}3m$$ 4 ¯ 3 m symmetry such as GaAs, CdTe, GaP, 3C-SiC, and ZnS. Furthermore, it can be generalized to other crystalline materials showing the Pockels effect. The method can be used to probe the space charge and the electric field in several kinds of electronic components and devices, as well as provide useful data on the role of defects, contact configurations and other surface and bulk inhomogeneities in the material that can affect the distribution of the internal electric field.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy

Here, we report on the investigation of an electrically biased high efficiency green III-nitride light-emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron microscope (LEEM). The surface of the LED was activated to negative electron affinity via deposition of a submonolayer of Cs. With the illumination column of the LEEM turned off, upon electrical injection of the LED, we directly image the hot electrons generated by eeh Auger-Meitner nonradiative processes that diffuse through the top p-Ga N layer and emit out the surface of the biased LED. By determining the source of emitted electrons using complementary electron emission spectroscopy measurements, EEM allows us to effectively map the carrier density within the LED. Using EEM, we observed nonelectron emitting regions with a density of approximately 3 × 10 8 cm -2 , identified as V-shaped defects (V-defects). This is confirmed through the corresponding dark spots of panchromatic cathodoluminescence measurements of the same sample and by plan-view transmission electron microscopy. The absence of electron emission at the sidewall of the V-defects can be attributed to several factors, including reduced carrier density in the sidewall quantum wells due to carriers traveling fast through the semipolar sidewalls before being injected into the planar quantum wells, the reduced population of hot electrons surviving diffusion through the thicker p-GaN filling in the V-defect before emission onto vacuum, and a smaller Auger-Meitner coefficient for the low In content semipolar sidewall quantum wells. The stronger electron emission observed at the ridges of most V-defects compared to the planar quantum well regions indicates larger local injected carrier densities, confirming that V-defect sidewalls allow for strong lateral carrier injection when compared to the weaker vertical injection away from the V-defect as evidenced by the weaker electron emission intensity away from the V-defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Imaging Secondary Electron Emission from a Single Atomic Layer

Graphene-based devices hold promise for a wide range of technological applications. Yet characterizing the structure and the electrical properties of a material that is only one atomic layer thick still poses technical challenges. Recent investigations indicate that secondary-electron electron-beam-induced current (SE-EBIC) imaging can reveal subtle details regarding electrical conductivity and electron transport with high spatial resolution. Here, it is shown that the SEEBIC imaging mode can be used to detect suspended single layers of graphene and distinguish between different numbers of layers. Pristine and contaminated areas of graphene are also compared to show that pristine graphene exhibits a substantially lower SE yield than contaminated regions. In conclusion, this SEEBIC imaging mode may provide valuable information for the engineering of surface coatings where SE yield is a priority.

36 MATERIALS SCIENCE↗
DOE OSTI2023

In operando neutron imaging characterizations of all-solid-state batteries

The surge in electric vehicle demand has propagated the extensive application of lithium-ion batteries (LIBs) in recent years. Gaining significant traction due to their promising high-energy density and elevated safety over traditional LIBs, all-solid-state Li batteries (ASLBs) have nonetheless been faced with hurdles relating to battery performance. These include concerns with interfacial compatibility, structural stability, Li dendrite inhibition, and large-scale manufacturing. To tackle these issues, it is necessary to employ advanced characterization methods to comprehend the intrinsic mechanisms within ASLBs. In this article, we advocate for the use of neutron imaging as a nondestructive approach for the operando visualization of ASLBs. We draw comparisons with other operando visualization strategies, underline the benefits of neutron imaging, and discuss its potential applicability in the scrutiny of all-solid-state Li metal batteries and all-solid-state Li-sulfur batteries. Neutron imaging provides valuable insights into the dynamics of Li concentration, reaction mechanisms, and transport constraints in ASLBs. These insights are pivotal in contributing to the evolution of high-performance all-solid-state batteries.

25 ENERGY STORAGE↗
DOE OSTI2023

Our teams design high-resolution MeV x-ray radiography systems for National security missions [Poster]

The NNSS has been at the forefront of custom high-fidelity x-ray/gamma radiographic imaging solutions that serve our national security for over five decades. Our radiography team utilizes expertise in physics modeling and analysis, along with optical, mechanical, and electrical design, in close collaboration with our customers, to develop imaging methods and capabilities that go beyond their needs. Conceptual designs are developed through R&D efforts to provide solutions for the specific problem at hand. Field systems are designed and built in-house, then qualified utilizing a range of facilities across the National Security Enterprise. Radiographic imaging systems are deployed by our team in the most challenging environments. The NNSS has a strong math and programming team that provides novel on-site image analysis methods that extract crucial information from data returned in field tests.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Reconstruction of simulated electrostatic potentials by automatic differentiation-based phase retrieval in electron microscopy imaging

Measuring interfacial electrostatic potentials is vital to understanding many fundamental materials properties. A variety of TEM methods exist for measuring electric potentials from the phase shift produced on an electron wave as it passes through a sample. However, most are either experimentally challenging or poorly suited to resolving nanoscale features. Here, we demonstrate the viability of a simple, automatic differentiation-based exit wave reconstruction from a focal series of images to accurately measure nanoscale electric potentials. Here, the analysis suggests that under optimal measurement conditions, electric potentials can be resolved to less than 0.06 V in magnitude and less than 1 nm in spatial extent.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A semblance measure for model comparison

Algorithmic and computational advances have made it possible that geophysical survey and earth model design can be aided by many systematic trial inverse-modelling runs with synthetic data. Such may, for example, come up in machine-learning approaches. Automated image appraisal pertaining to such applications will involve common statistical tests for goodness-of-data fit as a primary evaluation method. However, solution non-uniqueness may render multiple images equivalent in terms of their data fit, requiring secondary categorizers. A logical choice for classifying synthetic-imaging results quantifies the goodness of model fit where a known reference model replaces the observational input. The task of model intercomparison in terms of measuring the resemblance to the reference model poses challenges to common distance-based metrics like root mean square error and mean absolute error. First, distance-based metrics can introduce spurious contributions when smooth models with fuzzy target contours are to be compared against a sharp reference. Second, large differences due to parameter-estimation overshoots can dominate distance metrics. Here, we propose a remedy that is referred to as semblance and is based on the idea of logistic functions, where a binary-dependent variable adds non-zero or zero accumulation terms for the, respectively, passing or failing of preset target thresholds. This classifying approach is amenable to an objective where model feature recognition is primary. Numerical comparisons to distance-based metrics provide evidence for the advantages of the semblance in view of this objective. Geophysical imaging in conjunction with machine-learning is seen as a benefitting upcoming application area.

58 GEOSCIENCES↗