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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Monolithic optoelectronic circuit design for on-chip terahertz applications

We demonstrate a monolithic coplanar stripline platform for on-chip terahertz (THz) generation, transmission, and detection, addressing key challenges of mode purity, bandwidth, and referencing. Capacitive coupling of the photoconductive generator switch enforces pure odd-mode propagation, increases THz field strength, and extends the operational frequency range, achieving 0.05–1.4 THz. Our architecture enables fully monolithic fabrication with amorphous silicon switches, in situ field referencing, and galvanic isolation between generation and detection. Finite-element simulations and experiments confirm that suppressing parasitic modes improves signal integrity, providing a robust platform for high-fidelity THz spectroscopy, ultrafast electronics, and nanoscale quantum materials research.

Capacitive coupling↗
DOE OSTI2025

Direct integration of atomic precision advanced manufacturing into middle-of-line silicon fabrication

Atomic precision advanced manufacturing (APAM) dopes silicon with enough carriers to change its electronic structure and can be used to create novel devices by defining metallic regions whose boundaries have single-atom abruptness. Incompatibility with the thermal and lithography process requirements for gated silicon transistor manufacturing have inhibited exploration of both how APAM can enhance CMOS performance and how transistor manufacturing steps can accelerate the discovery of new APAM device concepts. In this work, we introduce an APAM process that enables direct integration into the middle of a transistor manufacturing workflow. We show that a process that combines sputtering and annealing with a hardmask preserves a defining characteristic of APAM, a doping density far in excess of the solid solubility limit, while trading another, the atomic precision, for compatibility with manufacturing. The electrical characteristics of a chip combining a transistor with an APAM resistor show that the APAM module has only affected the transistor through the addition of a resistance and not by altering the transistor. This proof-of-concept demonstration also outlines the requirements and limitations of a unified APAM tool, which could be introduced into manufacturing environments, greatly expanding access to this technology and inspiring a new generation of devices with it.

Chemical vapor deposition↗
DOE OSTI2025

Noise limits for dc SQUID readout of high- Q resonators below 300 MHz

We present the limits on noise for the readout of cryogenic high-Q resonators using dc Superconducting Quantum Interference Devices (SQUIDs) below 300 MHz. This analysis uses realized first-stage SQUIDs (previously published), whose performance is well described by Tesche–Clarke (TC) theory, coupled directly to the resonators. We also present data from a prototype second-stage dc SQUID array designed to couple to this first-stage SQUID as a follow-on amplifier with high system bandwidth. This analysis is the first full consideration of dc SQUID noise performance referred to a high-Q resonator over this frequency range and is presented relative to the standard quantum limit. We include imprecision, backaction, and backaction–imprecision noise correlations from TC theory, the noise contributed by the second-stage SQUIDs, wiring, and preamplifiers, and optimizations for both on-resonance measurements and off-resonance scan sensitivity. This architecture has modern relevance due to the increased interest in axion searches and the requirements of the DMRadio-m 3 axion search, which uses dc SQUIDs in this frequency range.

Bosons↗
DOE OSTI2025

Experimental study of high-energy single-pulse nanosecond discharges in pin-to-pin configuration

Single-pulse pin-to-pin nanosecond pulsed discharges in ambient air (gap distances of 3–7 mm) were investigated at high pulse energies (∼20–30 mJ deposited energy per 11 ns full width at half maximum pulse). A Michelson interferometry setup (532 nm continuous-wave laser) was employed to record time-resolved interferograms of the discharge, enabling spatially resolved calculation of the electron number density. An intensified charge-coupled device camera was used to capture the spatiotemporal evolution of the discharge (streamer formation and spark channel development), and Coherent Anti-Stokes Raman Spectroscopy (CARS) was used to measure post-discharge N 2 vibrational temperatures. Discharge current and voltage were monitored with a back-current shunt. The discharge was initiated with simultaneous cathode-directed and anode-directed streamers that bridge the gap within ∼1 ns and form a luminous, filamentary plasma channel immediately after breakdown. Laser interferometry measurements showed peak electron number densities of the order of 10 1 7–10 18 cm −3 , occurring about 15–20 ns after pulse arrival at the discharge gap. Shorter gap discharges yielded higher peak electron densities, consistent with the higher energy density in the smaller gaps. Spatially, the electron density was highest near the electrodes and decreased toward the midgap region, with 5 and 7 mm gaps exhibiting a pronounced drop in the central channel. CARS indicated initial vibrational temperatures of approximately 4000–6000 K in the spark core of ∼50 ns after the discharge onset, decaying on a ∼500 ns timescale as the plasma cooled and recombined.

Coherent anti-Stokes Raman spectroscopy↗
DOE OSTI2025

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

This study reports the thickness scaling of sputtered ferroelectric Zn 0.61 Mg 0.39 O (ZMO) thin films down to 43 nm. Encapsulated IrO 2 /ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm −2 and coercive fields that increased from 3.9 to 4.4 MV cm −1 as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

CdSeTe solar-cell performance with different dopant types

Four doping conditions were explored for CdTe-based solar cells: p-type As and P, n-type Al, and no intentional doping. In each case, the CdTe absorber was alloyed with Se, but only near the normal front-side, light entry for the cells, while the dopants were added from the back. Cells with p-dopants showed efficiencies up to 20% with front-side illumination, but the n-doped and undoped ones were close to zero. With back-side illumination, this was reversed with undoped up to 8% and p-doped ones only about 2%. These results are explained by Kelvin-probe measurements of electric-field profiles, which showed that the diode field was near the front for the higher-efficiency p-doping, but near the back for undoped and n-doped.

14 SOLAR ENERGY↗
DOE OSTI2026

Electrode chemistry impact on retention performance of ferroelectric hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2−x ) capacitors

Polarization retention of 10 nm thick ferroelectric hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2−x , HZO) capacitors with W and TaN electrodes is investigated over temperatures ranging from 85 to 150 °C. Same state and opposite state polarization margins for devices with W electrodes show minimal retention loss after 10 5 at 150 °C. The devices capped with TaN electrodes show excellent same state retention, but the opposite state polarization margin in the TaN-electrode devices displays 40% retention loss at 150 °C after 10 5 s. The TaN-capped devices exhibit a more pronounced imprint, which is attributed to an increased oxygen vacancy content (compared to W-capped devices). The increased oxygen vacancy content in the TaN-capped devices is supported by photoluminescence and leakage current measurements. In addition, TaN-capped devices have chemically diffuse electrode–HZO interfaces; more abrupt interfaces are present in the W-capped devices. The presence of interfacial phases in the TaN-capped devices may lead to larger depolarization fields due to reduced charge screening. The results from this study provide further evidence that for HZO ferroelectric devices the electrode can significantly impact polarization retention behavior due to differences in oxygen vacancy concentration and formation of non-ferroelectric interfacial layers.

36 MATERIALS SCIENCE↗
DOE OSTI2026

High-Q superconducting lumped-element resonators for low-mass axion searches

Low-frequency superconducting lumped-element resonators have recently attracted significant attention in the context of axion dark matter searches. Here, we present the design and implementation of a fixed-frequency superconducting resonator operating near 250 kHz, possessing an inductor volume of ∼1 liter and achieving an unloaded quality factor Q ≈ 2.1 × 10 6 . This resonator represents a significant improvement over the state of the art and informs the design of searches for low-mass axions.

Bosons↗
DOE OSTI2026

Analog-to-digital converter based on voltage-controlled superconducting devices

The increasing demand for cryogenic electronics in superconducting and quantum computing systems calls for ultra-energy-efficient data conversion architectures that remain functional at deep cryogenic temperatures. Here, in this work, we present the first design of a voltage-controlled superconducting flash analog-to-digital converter (ADC) based on a voltage-controlled quantum-enhanced Josephson junction field-effect transistor (JJFET). Exploiting its strong gate tunability and transistor-like behavior, the JJFET offers a scalable alternative to conventional current-controlled superconducting devices while aligning naturally with CMOS-style design methodologies. Building on our previously developed Verilog-A compact model calibrated to experimental data, we design and simulate a three-bit JJFET-based flash ADC targeted for integration within cryogenic control and readout circuitry in quantum computing. The core comparator block is realized through careful bias current selection and augmented with a three-terminal nanocryotron to precisely define reference voltages. Cascaded JJFET comparators ensure robust voltage gain, cascadability, and logic-level restoration across stages. Simulation results demonstrate accurate quantization behavior with ultra-low power dissipation, underscoring the feasibility of voltage-driven superconducting mixed-signal circuits. This work establishes a critical step toward unifying superconducting logic and data conversion, paving the way for scalable cryogenic architectures in quantum–classical co-processors, low-power artificial intelligence accelerators, and next-generation energy-constrained computing platforms.

Analog-to-digital converter↗
DOE OSTI2020

Plasma etching of wide bandgap and ultrawide bandgap semiconductors

The precise patterning of front-side mesas, backside vias, and selective removal of ternary alloys are all needed for power device fabrication in the various wide bandgap (AlGaN/GaN, SiC) and ultrawide bandgap (high Al-content alloys, boron nitride, Ga2O3, diamond) semiconductor technologies. The plasma etching conditions used are generally ion-assisted because of the strong bond strengths in these materials, and this creates challenges for the choice of masks in order to have sufficient selectivity over the semiconductor and to avoid mask erosion and micromasking issues. It can also be challenging to achieve practical etch rates without creating excessive damage in the patterned surface. The authors review the optimum choices for plasma chemistries for each of the semiconductors and acknowledge the pioneering work of John Coburn, who first delineated the ion-assisted etch mechanism.

42 ENGINEERING↗
DOE OSTI2024

Temperature-induced degradation of GaN HEMT: An in situ heating study

High-power electronics, such as GaN high electron mobility transistors (HEMTs), are expected to perform reliably in high-temperature conditions. This study aims to gain an understanding of the microscopic origin of both material and device vulnerabilities to high temperatures by real-time monitoring of the onset of structural degradation under varying temperature conditions. This is achieved by operating GaN HEMT devices in situ inside a transmission electron microscope (TEM). Electron-transparent specimens are prepared from a bulk device and heated up to 800 °C. High-resolution TEM (HRTEM), scanning TEM (STEM), energy-dispersive x-ray spectroscopy (EDS), and geometric phase analysis (GPA) are performed to evaluate crystal quality, material diffusion, and strain propagation in the sample before and after heating. Gate contact area reduction is visible from 470 °C accompanied by Ni/Au intermixing near the gate/AlGaN interface. Elevated temperatures induce significant out-of-plane lattice expansion at the SiNx/GaN/AlGaN interface, as revealed by geometry-phase GPA strain maps, while in-plane strains remain relatively consistent. Exposure to temperatures exceeding 500 °C leads to almost two orders of magnitude increase in leakage current in bulk devices in this study, which complements the results from our TEM experiment. The findings of this study offer real-time visual insights into identifying the initial location of degradation and highlight the impact of temperature on the bulk device’s structure, electrical properties, and material degradation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Combining molecular beam epitaxy and low-energy electron microscopy with in situ magnetic susceptibility measurements within an integrated ultrahigh vacuum system

Quantum two-dimensional materials, including ultrathin superconducting films, are of great current research interest. These films are typically fabricated under ultra-high vacuum (UHV) conditions and are sensitive to the environment—prone to oxidation and contamination when exposed to the atmosphere. This hampers the study of their intrinsic properties by standard ex situ techniques. Here, we present a variable-temperature mutual inductance probe system integrated under UHV with molecular beam epitaxy (MBE) synthesis and low-energy electron microscopy, enabling nondestructive in situ characterization of superconducting thin films. The system employs a reflection-type configuration and reaches a low temperature (∼4 K) using a high-cooling-power, vibration-isolated cryocooler. In conclusion, we demonstrate the system performance by measuring the superconducting critical temperature in a copper-oxide thin film.

2D materials↗
DOE OSTI2021

Plasma generation by household microwave oven for surface modification and other emerging applications

A simple and inexpensive method to generate plasma using a kitchen microwave oven is described in this paper. The microwave-generated plasma is characterized by spectroscopic analysis and compared with the absorption spectra of a gas discharge tube. A Paschen-like curve is observed as the microwave plasma initiation time is plotted as a function of the pressure of the plasma chamber. We have also demonstrated that this microwave-generated air plasma can be used in a multitude of applications such as: (a) surface modification of a substrate to change its wettability; (b) surface modification to change electrical/optical properties of a substrate; and (c) enhancement of adhesive forces for improved bonding of polymeric microfluidic molds, such as bonding polydimethylsiloxane (PDMS) chips to glass covers. These simple techniques of plasma generation and subsequent surface treatment and modification applications may bring new opportunities leading to new innovations not only in advanced labs, but also in undergraduate and even high school research labs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Single-Step Shear-Based Deformation Processing of Electrical Conductor Wires

Commercial electrical conductor wires are currently produced from aluminum alloys by multi-step deformation processing involving rolling and drawing. These processes typically require 10 to 20 steps of deformation, since the plastic strain or reduction that can be imposed in a single step is limited by material workability and process mechanics. Here, we demonstrate a fundamentally different, single-step approach to produce flat wire aluminum products using machining-based deformation that also ensures adequate material workability in the formed product. Two process routes are proposed: (1) chip formation by free-machining (FM), with a post-machining, light drawing reduction (<20%) to achieve desired finish and (2) constrained chip formation by large strain extrusion machining (LSEM). Using commercially pure aluminum conductor alloys (Al 1100 and EC1350) as representative material systems, we demonstrate key features of the machining-based processing, including (a) single-step processing to achieve flat wire geometries, (b) surface finish (Ra = 0.2 to 1.0 μm) comparable to that of commercial wire products made by drawing/rolling, (c) deformation control independent of wire size, and (d) hardness increases of 50–150% over that of annealed wires, while retaining high electrical conductivity (>56% IACS). Here, the wire microstructure, which can also be varied via the large-strain deformation parameters, is correlated with mechanical and electrical properties. Implications for commercial manufacture of flat wire products are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Tuning the Superconducting Transition Temperature of Co-sputtered Iridium and Platinum Films

A superconducting film with a tunable low transition temperature (Tc) is required in high-resolution Transition-Edge Sensor (TES) detectors, which have applications including dark matter detection, low threshold coherent elastic neutrino nucleus scattering measurement, and X-ray spectroscopy. We have been investigating a new approach to tune the Tc of superconducting thin films fabricated by co-sputtering Iridium and Platinum. The effects of Pt concentration and deposition parameters on the films' structural, electrical, and superconducting properties have been studied. AFM and XRD techniques and low temperature resistance measurements have been utilized for film characterization. By varying the Pt concentration and deposition parameters when co-sputtering, we have successfully achieved controllable tuning of Tc in the range of 30-200 mK. The experimental results demonstrate co-sputtering as a viable method for controlling the Tc of Ir-based thin films that can be applied to fabricating high-resolution TESs.

Yefremenko, V. G.↗
DOE OSTI2021

Ferroic phase transitions and magnetoelectric coupling in cobalt doped BaTiO 3

Magnetoelectric (ME) materials exhibit interesting physics with cross coupling between ferroelectric and magnetic order parameters and thus strong potential to be utilized in memory, spintronics and other multifunctional electronic/magnetic devices. Doping of suitable transition metals in ferroelectrics can induce magnetism and ME coupling and modify the physical properties. Here, we report the structural, electronic, magnetic and ME coupling of 3.5, 5 and 7.5 mol% cobalt doped BaTiO 3 (BTO) ceramics. X-ray diffraction and Raman spectroscopy indicate that the samples are single phase having a tetragonal crystal structure with P4mm symmetry. The tetragonality ratio is found to decrease with increasing cobalt content. We observed a Fano-like asymmetric peak in the [A 1 (LO 1 )] Raman mode at ~173 cm -1 in all the cobalt doped BTO samples. The cobalt dopants are shown to be uniformly distributed throughout the surface of the samples. We observed a lowering of the ferroelectric transition temperature and increasing diffusivity parameter with increasing cobalt concentration. The electrical properties of all the samples have been investigated in detail by impedance spectroscopy and ac conductivity studies before and after the ferroelectric phase transitions. All the samples show hysteretic ferroelectric behavior with a clear saturation state that decreases with increasing cobalt content. The observed ferroelectricity in these samples is intrinsic in nature. The 3.5% cobalt doped BTO sample exhibits paramagnetic behavior whereas the 5 and 7.5% cobalt doped BTO samples show ferromagnetic ordering below 43 K. The 7.5% cobalt doped BTO samples show significant ME coupling.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Control of Excitonic Energy Transfer in RGB Quantum Dot:Polymer Composites for Tunable White Emission

Tint-controlled white light is crucial for both illumination systems and display applications. Here, in this study, we demonstrate solution-processed quantum-dot light-emitting diodes (QD-LEDs) featuring a red–green–blue (RGB) QD–poly(methyl methacrylate) (PMMA) composite emissive layer (EML) for tunable white electroluminescence (EL). In this composite EML, PMMA functions as a dispersion matrix that modulates the interdot spacing (d), thereby controlling Förster resonance energy transfer (FRET) between QDs. By adjustment of the PMMA content, the balance of R, G, and B emissions is controlled, enabling systematic and continuous tuning of the EL color from greenish to reddish white at a fixed RGB ratio and constant driving bias. Time-resolved photoluminescence measurements confirm that the variation in the exciton lifetime with the PMMA fraction is the primary factor for tuning the EL color. Notably, nearly pure white EL with CIE coordinates close to (0.33, 0.33) is achieved using a diluted PMMA matrix without significant degradation of the electrical properties. Our results demonstrate d as an independent design parameter for decoupling color tuning from RGB composition and electrical operation, providing a versatile design framework for high-quality white- or tint-controlled QD-LEDs toward advanced solid-state lighting and display technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Multiamorphous Phases in Diketopyrrolopyrrole-Based Conjugated Polymers: From Bulk to Ultrathin Films

The glass transition temperature (T g ) of conjugated polymers is a crucial physical parameter that governs their mechanical and electrical properties for applications from sensor technology to skin-like electronics. Despite some well-developed methods that exist for detecting T g of conjugated polymers, there is still a need for the combination of advanced calorimetric methodologies to characterize T g in a broad range of temperatures and scales from bulk to nanometer-thin films. In this work, alternating current (ac) chip calorimetry and flash differential scanning calorimetry (flash DSC) are applied to successfully identify the Tgs and segmental relaxations of conjugated polymers. The detected relaxations were interpreted, in agreement with existing observations in similar systems, as a side-chain relaxation (low temperature), mobile amorphous fractions (MAF), and rigid amorphous fractions (RAF). T g s of MAF and RAF increase and decrease with increasing size of fused thiophene units in the backbone, respectively. The T g s of diketopyrrolopyrrole-based conjugated polymer thin films are also identified by the same method, with both T g s showing a decreased value compared to those of bulk samples. Furthermore, the weight fractions of MAF and RAF with various film thicknesses are qualitatively analyzed based on the heat capacity step of each amorphous fraction during the glass transition. This facile method gives insights into the physical nature of amorphous phases in conjugated polymers for better revealing their structure-property relationships, which will guide the designs of new materials with optimized electrical and mechanical properties in the future.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗