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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Quantum barriers engineering toward radiative and stable perovskite photovoltaic devices

Efficient photovoltaic devices must be efficient light emitters to reach the thermodynamic efficiency limit. Here, we present a promising prospect of perovskite photovoltaics as bright emitters by harnessing the significant benefits of photon recycling, which can be practically achieved by suppressing interfacial quenching. We have achieved radiative and stable perovskite photovoltaic devices by the design of a multiple quantum well structure with long (~3 nm) organic spacers with oleylammonium molecules at perovskite top interfaces. Our L-site exchange process (L: barrier molecule cation) enables the formation of stable interfacial structures with moderate conductivity despite the thick barriers. Compared to popular short (~1 nm) Ls, our approach results in enhanced radiation efficiency through the recursive process of photon recycling. This leads to the realization of radiative perovskite photovoltaics with both high photovoltaic efficiency (in-lab 26.0%, certified to 25.2%) and electroluminescence quantum efficiency (19.7 % at peak, 17.8% at 1-sun equivalent condition). Furthermore, the stable crystallinity of oleylammonium-based quantum wells enables our devices to maintain high efficiencies for over 1000 h of operation and >2 years of storage.

14 SOLAR ENERGY↗
DOE OSTI2024

Surface-binding molecular multipods strengthen the halide perovskite lattice and boost luminescence

Reducing the size of perovskite crystals to confine excitons and passivating surface defects has fueled a significant advance in the luminescence efficiency of perovskite light-emitting diodes (LEDs). However, the persistent gap between the optical limit of electroluminescence efficiency and the photoluminescence efficiency of colloidal perovskite nanocrystals (PeNCs) suggests that defect passivation alone is not sufficient to achieve highly efficient colloidal PeNC-LEDs. Here, we present a materials approach to controlling the dynamic nature of the perovskite surface. Our experimental and theoretical studies reveal that conjugated molecular multipods (CMMs) adsorb onto the perovskite surface by multipodal hydrogen bonding and van der Waals interactions, strengthening the near-surface perovskite lattice and reducing ionic fluctuations which are related to nonradiative recombination. The CMM treatment strengthens the perovskite lattice and suppresses its dynamic disorder, resulting in a near-unity photoluminescence quantum yield of PeNC films and a high external quantum efficiency (26.1%) of PeNC-LED with pure green emission that matches the Rec.2020 color standard for next-generation vivid displays.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Comprehensive defect suppression in perovskite nanocrystals for high-efficiency light-emitting diodes

Electroluminescence efficiencies of metal halide perovskite nanocrystals (PNCs) are limited by a lack of material strategies that can both suppress the formation of defects and enhance the charge carrier confinement. Here we report a one-dopant alloying strategy that generates smaller, monodisperse colloidal particles (confining electrons and holes, and boosting radiative recombination) with fewer surface defects (reducing non-radiative recombination). Doping of guanidinium into formamidinium lead bromide PNCs yields limited bulk solubility while creating an entropy-stabilized phase in the PNCs and leading to smaller PNCs with more carrier confinement. Further, the extra guanidinium segregates to the surface and stabilizes the undercoordinated sites. Furthermore, a surface-stabilizing 1,3,5-tris(bromomethyl)-2,4,6-triethylbenzene was applied as a bromide vacancy healing agent. The result is highly efficient PNC-based light-emitting diodes that have current efficiency of 108 cd A –1 (external quantum efficiency of 23.4%), which rises to 205 cd A –1 (external quantum efficiency of 45.5%) with a hemispherical lens.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Bright and stable light-emitting diodes made with perovskite nanocrystals stabilized in metal–organic frameworks

Perovskite nanocrystals are exceptional candidates for light-emitting diodes (LEDs). However, they are unstable in the solid film and tend to degrade back to the bulk phase, which undermines their potential for LEDs. Here we demonstrate that perovskite nanocrystals stabilized in metal–organic framework (MOF) thin films make bright and stable LEDs. The perovskite nanocrystals in MOF thin films can maintain the photoluminescence and electroluminescence against continuous ultraviolet irradiation, heat and electrical stress. As revealed by optical and X-ray spectroscopy, the strong emission originates from localized carrier recombination. Bright LEDs made from perovskite-MOF nanocrystals are demonstrated with a maximum external quantum efficiency of over 15% and a high brightness of over 10 5 cd m -2 after the device reaches stabilization. During LED operation, the nanocrystals can be well preserved, free of ion migration or crystal merging through protection by the MOF matrix, leading to a stable performance over 50 hours.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Colloidal quantum dot lasers

We report semiconductor nanocrystals represent a promising class of solution-processable optical-gain media that can be manipulated via inexpensive, easily scalable colloidal techniques. Due to their extremely small sizes (typically <10 nm), their properties can be directly controlled via effects of quantum confinement; therefore, they are often termed colloidal quantum dots (CQDs). In addition to size-tunable emission wavelengths, CQDs offer other benefits for lasing applications, including low optical-gain thresholds and high temperature stability of lasing characteristics. Recent progress in understanding and practical control of processes impeding light amplification in CQDs has resulted in several breakthroughs, including the demonstration of optically pumped continuous-wave lasing, the realization of optical gain with direct current electrical injection and the development of dual-function electroluminescent devices that also operate as optically pumped lasers. The purpose of this Review is to assess the status of the field of CQD lasing and discuss the existing challenges and opportunities. A particular focus is on approaches for suppressing nonradiative Auger recombination, novel optical-gain concepts enabled by strong exciton-exciton interactions and controlled CQD charging, effects of nanocrystal form factors on light amplification and practical architectures for realizing electrically pumped CQD lasers. This overview suggests that the accumulated knowledge, along with the approaches developed for manipulating the optical-gain properties of colloidal nanostructures, perfectly position the CQD field for successfully addressing a long-standing challenge: the realization of CQD-based laser diodes. Colloidal quantum dots are promising materials for realizing versatile, wavelength-tunable, solution-processed lasers. This Review surveys recent advances in colloidal quantum dot lasing, provides an in-depth analysis of outstanding challenges and discusses a path forward to implementing technologically viable lasing devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electrically driven amplified spontaneous emission from colloidal quantum dots

Colloidal quantum dots (QDs) are attractive materials for realizing solution-processable laser diodes that could benefit from size-controlled emission wavelengths, low optical-gain thresholds and ease of integration with photonic and electronic circuits. However, the implementation of such devices has been hampered by fast Auger recombination of gain-active multicarrier states, poor stability of QD films at high current densities and the difficulty to obtain net optical gain in a complex device stack wherein a thin electroluminescent QD layer is combined with optically lossy charge-conducting layers. Here we resolve these challenges and achieve amplified spontaneous emission (ASE) from electrically pumped colloidal QDs. The developed devices use compact, continuously graded QDs with suppressed Auger recombination incorporated into a pulsed, high-current-density charge-injection structure supplemented by a low-loss photonic waveguide. These colloidal QD ASE diodes exhibit strong, broadband optical gain and demonstrate bright edge emission with instantaneous power of up to 170 μW.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High-temperature analysis of optical coupling using AlGaAs/GaAs LEDs for high-density integrated power modules

A low-temperature co-fired ceramic (LTCC)-based optocoupler design is demonstrated as a possible solution for optical isolation in high-density integrated power modules. The design and fabrication of LTCC based package are discussed. Commercially available aluminum gallium arsenide/gallium arsenide (AlGaAs/GaAs) double heterostructure is used both as emitter and photodetector in the proposed optocoupler. A detailed study on the electroluminescence and spectral response of the AlGaAs/GaAs structure is conducted at elevated temperatures. The material figure of merit parameter, D*, is calculated in the temperature range 77–800 K. The fabricated optocoupler is tested at elevated temperatures, and the results are presented.

42 ENGINEERING↗
DOE OSTI2022

Carbazole-substituted benzobisoxazoles: near-UV fluorescent emitters and ambipolar hosts for organic light-emitting diodes

The design of organic light emitting diode (OLED) materials with the potential for exhibiting thermally-activated delayed fluorescence (TADF) is reported. Using computational methods (DFT/TD-DFT) as a guiding tool, six materials with a benzobisoxazole (BBO) core and donor–acceptor–donor architectures were designed by changing the conjugation position of carbazole-substituted phenyl substituents and the type of BBO isomer (cis- vs. trans-). Experimental steady-state and transient absorption spectroscopic techniques were utilized to probe the TADF activity of these molecules. Each material was then used in host–guest OLED devices as either near-UV dopants or host with low singlet-triplet energy differences. The electroluminescent properties show that when used as dopants these materials provide near-UV emission (CIE y < 0.06 and CIE x = 0.16), whereas when used as hosts, these materials show reduced operating voltages and increased performance efficiencies when compared to commercial materials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment

We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10−9 A at −50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics.

Yang, Chen (ORCID:0000000230090882)↗
DOE OSTI2022

Geometric and doping effects on radiative recombination in thin-film near-field energy converters

Modeling radiative recombination is crucial to the analysis of radiative energy converters. In this work, a local radiative recombination coefficient is defined and derived based on fluctuational electrodynamics that is applicable to thin-film cells in both the near field and far field. The predicted radiative recombination coefficient of an InAs cell deviates from the van Roosbroeck–Shockley relation when the thickness is less than 10 µm, and the difference exceeds fourfold with a 10 nm film. The local radiative recombination coefficient is orders of magnitude higher when an InAs cell is configured in the near field. The local radiative recombination coefficient reduces as the doping level approaches that of a degenerate semiconductor. The maximum output power and efficiency of a thermoradiative cell would be apparently overpredicted if the electroluminescence coefficient defined in this paper were taken as unity for heavily doped semiconductors.

Feng, Dudong↗
DOE OSTI2023

Study of dielectric breakdown in liquid xenon with XeBrA: The xenon breakdown apparatus

Maintaining the electric fields necessary for the current generation of noble liquid time projection chambers (TPCs), with drift lengths exceeding 1 m, requires a large negative voltage applied to their cathode. Delivering such high voltage is associated with an elevated risk of electrostatic discharge and electroluminescence, which would be detrimental to the performance of the experiment. The Xenon Breakdown Apparatus (XeBrA) is a 5-l, high voltage test chamber built to investigate the contributing factors to electrical breakdown in noble liquids. Here, in this work, we present the main findings after conducting scans over stressed electrode areas, surface finish, pressure, and high voltage ramp speed in the medium of liquid xenon. Area scaling and surface finish were observed to be the dominant factors affecting breakdown, whereas no significant changes were observed with varying pressure or ramp speed. A general rise in both the anode current and photon rate was observed in the last 30 s, leading up to a breakdown, with a marked increase in the last couple of seconds. In addition, the position of breakdowns was reconstructed with a system of high-speed cameras and a moderate correlation with the Fowler–Nordheim field emission model was found. Tentative evidence for bubble nucleation being the originating mechanism of breakdown in the liquid was also observed. We deem the results presented in this work to be of particular interest for the design of future, large TPCs, and practical recommendations are provided.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Ultrawide bandgap semiconductor heterojunction p–n diodes with distributed polarization-doped p-type AlGaN layers on bulk AlN substrates

Ultrawide bandgap heterojunction p–n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current–voltage characteristics show a turn-on voltage of Vbi≈5.5 V, a minimum room temperature ideality factor of η≈1.63, and more than 12 orders of current modulation at room temperature. A stable current operation of the ultrawide bandgap semiconductor diode is measured up to a temperature of 300 °C. The one-sided n+–p heterojunction diode design enables a direct measurement of the spatial distribution of polarization-induced mobile hole density in the graded AlGaN layer from the capacitance–voltage profile. The measured average mobile hole density is p∼5.7×1017 cm−3, in close agreement with what is theoretically expected from distributed polarization doping. Light emission peaked at 260 nm (4.78 eV) observed in electroluminescence corresponds to interband radiative recombination in the n+ AlGaN layer. A much weaker deep-level emission band observed at 3.4 eV is attributed to cation-vacancy and silicon complexes in the heavily Si-doped AlGaN layer. These results demonstrate that distributed polarization doping enables ultrawide bandgap semiconductor heterojunction p–n diodes that have wide applications ranging from power electronics to deep-ultraviolet photonics. These devices can operate at high temperatures and in harsh environments.

Physics↗
DOE OSTI2019

Direct comparison of high voltage breakdown measurements in liquid argon and liquid xenon

As noble liquid time projection chambers grow in size their high voltage requirements increase, and detailed, reproducible studies of dielectric breakdown and the onset of electroluminescence are needed to inform their design. The Xenon Breakdown Apparatus (XeBrA) is a 5-liter cryogenic chamber built to characterize the DC high voltage breakdown behavior of liquid xenon and liquid argon. Electrodes with areas up to 33 cm 2 were tested while varying the cathode-anode separation from 1 to 6 mm with a voltage difference up to 75 kV. A power-law relationship between breakdown field and electrode area was observed. Finally, the breakdown behavior of liquid argon and liquid xenon within the same experimental apparatus was comparable.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Study of scintillation light collection, production and propagation in a 4 tonne dual-phase LArTPC

The 3×1×1 m3 demonstrator is a dual phase liquid argon time projection chamber that has recorded cosmic rays events in 2017 at CERN. The light signal in these detectors is crucial to provide precise timing capabilities. The performance of the photon detection system, composed of five PMTs, are discussed. The collected scintillation and electroluminescence light created by passing particles has been studied in various detector conditions. In particular, the scintillation light production and propagation processes have been analyzed and compared to simulations, improving the understanding of some liquid argon properties.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Scintillation light detection in the 6-m drift length ProtoDUNE Dual Phase liquid argon TPC

The Deep Underground Neutrino Experiment (DUNE) is a leading-edge experiment for long-baseline neutrino oscillation studies, neutrino astrophysics and nucleon decay searches. ProtoDUNE-Dual Phase (DP) is a 6 × 6 × 6 m$^{3}$ liquid argon time-projection-chamber (LArTPC) operated at the CERN Neutrino Platform in 2019–2020 as a prototype of the DUNE far detector. In ProtoDUNE-DP, the scintillation and electroluminescence light produced by cosmic muons in the LArTPC is collected by photomultiplier tubes placed up to 7 m away from the ionizing track. In this paper, we present the performance of the ProtoDUNE-DP photon detection system, comparing different wavelength-shifting techniques and the use of xenon-doped LAr as a promising option for future large LArTPCs. The scintillation light production and propagation processes are analyzed and compared to simulations, improving understanding of the liquid argon properties.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Operation and performance of a dual-phase crystalline/vapor xenon time projection chamber

We have built and operated a crystalline/vapor xenon TPC, with the goal of improving searches for dark matter. The motivation for this instrument is the fact that beta decays from the radon decay chain to the ground state presently limit the state-of-the-art liquid/vapor xenon experiments. In contrast, a crystalline xenon target has the potential to exclude, or tag and reject radon-chain backgrounds. As a preamble to demonstrating such capabilities, the present article makes a first demonstration of the operation of a crystalline/vapor xenon TPC with electroluminescence (gas gain) for the electron signal readout. It also shows that the scintillation yield in crystalline xenon appears to be identical to that in liquid xenon, in contrast to previous results.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Predicting the single-site and multi-site event discrimination power of dual-phase time projection chambers

Dual-phase xenon time projection chambers (TPCs) are widely used in searches for rare dark matter and neutrino interactions, in part because of their excellent position reconstruction capability in 3D. Despite their millimeter-scale resolution along the charge drift axis, xenon TPCs face challenges in resolving single-site (SS) and multi-site (MS) interactions in the transverse plane. In this paper, we build a generic TPC model with an idealized signal readout, and use Fisher Information (FI) to predict its theoretical capability of differentiating SS and MS events using the electroluminescence signal. We also demonstrate via simulation that, when only statistical photon noise is present, the theoretical limits can be approached with conventional reconstruction algorithms like maximum likelihood estimation, and with a convolutional neural network classifier. The implications of this study on future TPC experiments will be discussed.

Physics↗
DOE OSTI2024

Parallel-plate avalanche counters for heavy-ion beam tracking: History and mysteries

Despite being an old detector concept, position-sensitive parallel-plate avalanche counters (PPACs) remain widely used today for heavy-ion position and timing measurements. In modern rare isotope beam facilities and large-acceptance fragment separators, PPACs are used to characterize beam properties (diagnostics), facilitate beam delivery (tuning), and provide event-by-event beam tracking for particle identification (PID). Most popular particle localization methods in PPAC detectors are based on strip electrodes electrically connected to resistive-chain circuits or delay lines. More exotic systems include optical readouts based on recording electroluminescence light with high-granularity photodetector arrays or high-resolution resistive anode electrodes. PPACs with conventional resistive-chain or delay-line readouts achieve typical position and time resolutions of below 1 mm ( σ ) and around 150 ps ( σ ), respectively. In addition, delay-line systems are capable of counting rates above several hundred kHz for beam areas of a few millimeters square, and around 1 MHz for larger beam sizes. Resistive-chain readouts have limited rates of a few tens of kHz. A review of the operation principles and performance of PPAC detectors is presented in this paper. We will discuss decades-long experience building and operating PPACs developed at the National Superconducting Cyclotron Laboratory, and then refined at the Facility for Rare Isotope Beams (FRIB), mostly focusing on the delay-line readout technique (DLPPAC). We will also discuss problems that arise due to electric discharges at high rates and briefly describe ongoing developments at FRIB. Published by the American Physical Society 2024

Physics↗