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Effects of high temperature and e-beam irradiation on the stability of refractory thin films
Refractory thin films of Al2O3, ZrO2, MgO, ThO2, and BN have been investigated in situ in an UHV transmission electron microscope. The electron transparent refractory films were prepared by electron-beam evaporation, anodization, RF sputtering, and thinning of bulk crystal materials. The study concentrates on monitoring the thermal and mechanical stability of the films, phase and structural changes, and electron irradiation effects as a function of film-preparation conditions. With increasing temperatures, five different crystallographic phases were observed for both anodized and electron-beam-evaporated alumina films. Zirconia films exhibited two phase transitions upon heating to 1200 C and electron-irradiation-induced crystallization of ZrO2 even at room temperature. MgO, ThO2, and BN films did not undergo any noticeable phase transformation but ruptured due to sintering below 1200 C.
Resolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons
Electron irradiation effect on resolution of lithium-drifted silicon semiconductor detectors
Low temperature irradiations of silicon solar cells with 1 MeV electrons
Si solar cells under low temperature electron irradiation, noting damage rate dependence on measurement temperature
Replica grating study
Methods are outlined which were used to test the response of replica diffraction gratings to a space environment, specifically the response of the replica gratings to thermal-vacuum and electron irradiation stress. It is concluded that there probably is some degradation to thermal stress, but that there is probably no significant degradation due to a vacuum environment. It is further concluded that the degradation of performance of replica gratings because of electron irradiation is due to the interaction of the electrons and the replica grating substrate and not to the replication material itself. Replica and original gratings on the same substrate material should thus respond to particle irradiation in the same manner. A study is presented on the variation of refraction index of a space-related material, Nd:CaF2, with wavelength, percent neodymium doping, and temperature.
Adhesion between polymers and evaporated gold and nickel films
To obtain information on the adhesion between metal films and polymeric solids, the adhesion force was measured by means of a tensile pull test. It was found that the adhesion strengths between polymeric solids and gold films evaporated on polymer substrates were (1.11 + or - 0.53) multiplied by 10(6) N/M(2) on PTFE, about 5.49 multiplied by 10(6) N/m(2) on UHMWPE, and 6.54x10(6) on 6/6 nylon. The adhesion strengths for nickel films evaporated on PTFE, UHMWPE, and 6/6 nylon were found to be a factor of 1.7 higher than those for the gold coated PTFE, UHMWPE, and 6/6 nylon. To confirm quantitatively the effect of electron irradiation on the adhesion strength between a PTFE solid and metal films, a tensile pull test was performed on the irradiated PTFE specimens, which were prepared by evaporating nickel or gold on PTFE surfaces irradiated by 2-keV electrons for various times. After irradiation, the adhesion strength increased to (4.92 + or - 0.92)x10(6) N/m(2) for nickel coated PTFE and (1.82 + or - 0.48)x10(6) N/m(2) for gold coated PTFE. The improvement in adhesion for nickel is higher than that for gold.
UV testing of INTELSAT-7, 7A, and 8 solar cells
A 4000 hour experiment, conducted in late 1992 through mid 1993, confirmed earlier results on the ultraviolet damage effects in covered solar cells of various types being used, or proposed for use, in INTELSAT programs. Two different UV test systems were used to identify systematic errors and to study the effects of UV source-bulb age on degradation rate. After correction for contamination and UV source-bulb aging, the extrapolated degradation rates for irradiated and unirradiated INTELSAT-5, -6 single AR(SAR) coated cells and INTELSAT-7, -7A, -8 double layer AR(DAR) coated cells in both the 1993 tests confirm the following hypotheses resulting from the 1992 experiment. (a) Irradiated cells display significantly more UV degradation than do the unirradiated cells for tests exceeding 2000 hours. The new data indicates that degradation effects from electron irradiation are proportional to t(exp 2) (the square of the UV hours), at least for times less than or equal to 3000 hours. (b) This difference does not depend upon entire reflective coating, cell resistivity, or manufacturer within the sensitivity and reproducibility of the experiment. (c) There is a clear difference in degradation rate between single AR coated cells (TiO(x)) and double layer AR coated cells (SiO(x) and Al2O3?). At 100,000 hours (11.4 years) the DAR coated cells display more degradation than do the SAR coated cells, even though at 1,000 hours the DAR cells display less degradation. (d) UV degradation rates, to modern covered silicon solar cells, at the beginning of bulb life drop from approximately 2 times the average rate to near zero after 2000 hours (average end-of-life for the xenon short-arc lamps used in the tests). The effects of 1 MeV electron irradiation (10(exp 15) e(-)/sq cm) prior to UV exposure are clearly indicated in the plot of percent change in cell open circuit voltage (Voc) versus percent change in short circuit current (Isc) during the UV test and post-test cleanup of the cells. Clearly, extended UV testing produces a permanent photo-induced redegradation of previously irradiated cells. However, this photo-induced redegradation may be caused by the long-wavelength light, not the UV light.
Performance, Defect Behavior and Carrier Enhancement in Low Energy, Proton Irradiated p(+)nn(+) InP Solar Cells
InP p(+)nn(+) cells, processed by MOCVD, were irradiated by 0.2 MeV protons and their performance and defect behavior observed to a maximum fluence of 10(exp 13)/sq cm. Their radiation induced degradation, over this fluence range, was considerably+less than observed for similarly irradiated, diffused junction n p InP cells. Significant degradation occurred in both the cell's emitter and base regions the least degradation occurring in the depletion region. A significant increase in series resistance occurs at the highest fluenc.e. Two majority carrier defect levels, E7 and E10, are observed by DLTS with activation energies at (E(sub C) - 0.39)eV and (E(sub C) - 0.74)eV respectively. The relative concentration of these defects differs considerably from that observed after 1 MeV electron irradiation. An increased carrier concentration in the cell's n-region was observed at the highest proton fluence, the change in carrier concentration being insignificant at the lower fluences. In agreement with previous results, for 1 and 1.5 MeV electron irradiated InP p(+)n junctions, the defect level E10 is attributed to a complex between zinc, diffused into the n-region from the zinc doped emitter, and a radiation induced defect. The latter is assumed to be either a phosphorus vacancy or interstitial. The increased, or enhanced carrier concentration is attributed to this complex acting as a donor.
Diverse Electron-Induced Optical Emissions from Space Observatory Materials at Low Temperatures
Electron irradiation experiments have investigated the diverse electron-induced optical and electrical signatures observed in ground-based tests of various space observatory materials at low temperature. Three types of light emission were observed: (i); long-duration cathodoluminescence which persisted as long as the electron beam was on (ii) short-duration (<1 s) arcing, resulting from electrostatic discharge; and (iii) intermediate-duration (~100 s) glow-termed "flares". We discuss how the electron currents and arcing-as well as light emission absolute intensity and frequency-depend on electron beam energy, power, and flux and the temperature and thickness of different bulk (polyimides, epoxy resins, and silica glasses) and composite dielectric materials (disordered SiO2 thin films, carbon- and fiberglass-epoxy composites, and macroscopically-conductive carbon-loaded polyimides). We conclude that electron-induced optical emissions resulting from interactions between observatory materials and the space environment electron flux can, in specific circumstances, make significant contributions to the stray light background that could possibly adversely affect the performance of space-based observatories.
Radiation characteristics of low resistivity float zone silicon solar cells
The effects of 1-MeV electron irradiation on silicon solar cells with AM0 efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high-efficiency terrestrial silicon solar cells. Results indicate that these cells are more susceptible to radiation damage. However, they do maintain a greater overall power output than conventional cells to which they were compared. These cells do not demonstrate post-electron-irradiation photon decay as has been described for cells processed on 1-10 ohm-cm FZ silicon.
Investigation of microbial contamination inside irradiated and heated electronic components
Microbial contamination inside irradiated and heated electronic components
Effects of electron-beam irradiation of polyethylene terephthalate
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Radiation damage in high voltage silicon solar cells
Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.
Radiation damage in high voltage silicon solar cells
High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.
Radiation damage in high voltage silicon solar cells
Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of a HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.
Recent developments in indium phosphide space solar cell research
Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n+p and p+n configurations with total area efficiencies of 17.9 and 15.9% (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AMO efficiency of 20.5% was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 the the 16th power/cu cm respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n+p cells are more radiation resistant at higher fluences than the p+n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.
Recent developments in indium phosphide space solar cell research
Recent developments and progress in indium phosphide solar cell research for space application are reviewed. Indium phosphide homojunction cells were fabricated in both the n + p and p + n configurations with total area efficiencies of 17.9 and 15.9 percent (air mass 0 and 25 C) respectively. Organometallic chemical vapor deposition, liquid phase epitaxy, ion implantation and diffusion techniques were employed in InP cell fabrication. A theoretical model of a radiation tolerant, high efficiency homojunction cell was developed. A realistically attainable AM0 efficiency of 20.5 percent was calculated using this model with emitter and base doping of 6 x 10 to the 17th power and 5 x 10 to the 16th power/cu cm, respectively. Cells of both configurations were irradiated with 1 MeV electrons and 37 MeV protons. For both proton and electron irradiation, the n + p cells are more radiation resistant at higher fluences than the p + n cells. The first flight module of four InP cells was assembled for the Living Plume Shield III satellite.
Effects Of Irradiation By Electrons On Two Polyimides
Polyimides of new class, known as polyetherimides, used for composites and castings. Study undertaken to compare effects of electron radiation, in doses expected for 30-year missions in geosynchronous orbit, on molecular structures and tensile properties of two commercially available polyimides: polypyromellitimide and polyetherimide. Findings helpful in development of new polymers that endure radiation, leading to synthesis of polymers not having methyl groups or other moieties that are sources of hydrogen, inhibiting self-mending. Significance of study for polymer industry relating to structures in outer space considerable.