Internal energy sources for implanted devices.
Human body as source of power for implanted electronic devices
HUMAN BODY↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Screening Plastic-Encapsulated Solid-State Devices
Suitability of plastic-encapsulated solid-state electronic devices for use in spacecraft discussed. Conclusion of preliminary study was plasticencapsulated parts sufficiently reliable to be considered for use in lowcost equipment used at moderate temperature and low humidity. Useful to engineers as guides to testing or use of plastic encapsulated semiconductors in severe terrestrial environments.
Buldhaupt, L.↗
Methods and devices based on brillouin selective sideband amplification
Opto-electronic devices and techniques using Brillouin scattering to select a sideband in a modulated optical carrier signal for amplification. Two lasers respectively provide a carrier signal beam and a Brillouin pump beam which are fed into an Brillouin optical medium in opposite directions. The relative frequency separation between the lasers is adjusted to align the frequency of the backscattered Brillouin signal with a desired sideband in the carrier signal to effect a Brillouin gain on the sideband. This effect can be used to implement photonic RF signal mixing and conversion with gain, conversion from phase modulation to amplitude modulation, photonic RF frequency multiplication, optical and RF pulse generation and manipulation, and frequency-locking of lasers.
Yao, X. Steve↗
Micromachined TWTs for THz Radiation Sources
The Terahertz (THz) region of the electromagnetic spectrum (about 300 - 3000 GHz in frequency or about 0.1 - 1 mm free space wavelength) has enormous potential for high-data-rate communications, spectroscopy, astronomy, space research, medicine, biology, surveillance, remote sensing, industrial process control, etc. It has been characterized as the most scientifically rich, yet under-utilized, region of the electromagnetic spectrum. The most critical roadblock to full exploitation of the THz band is lack of coherent radiation sources that are powerful (0.001 - 1.0 W continuous wave), efficient (> 1%), frequency agile (instantaneously tunable over 1% bandwidths or more), reliable, and comparatively inexpensive. To develop vacuum electron device (VED) radiation sources satisfying these requirements, fabrication and packaging approaches must be heavily considered to minimize costs, in addition to the basic interaction physics and circuit design. To minimize size of the prime power supply, beam voltage must be minimized, preferably 10 kV. Solid state sources satisfy the low voltage requirement, but are many orders of magnitude below power, efficiency, and bandwidth requirements. On the other hand, typical fast-wave VED sources in this regime (e.g., gyrotrons, FELs) tend to be large, expensive, high voltage and very high power devices unsuitable for most of the applications cited above. VEDs based on grating or inter-digital (ID) circuits have been researched and developed. However, achieving forward-wave amplifier operation with instantaneous fractional bandwidths > 1% is problematic for these devices with low-energy (< 15 kV) electron beams. Moreover, the interaction impedance is quite low unless the beam-circuit spacing is kept particularly narrow, often leading to significant beam interception. One solution to satisfy the THz source requirements mentioned above is to develop micromachined VEDs, or "micro-VEDs". Among other benefits, micro-machining technologies provide superior high frequency wall conductivity as a result of superior surface smoothness compared with conventional mechanical or electric discharge machining approaches. Micro-VED technologies are already being applied to the development of millimeter-wave klystrons at Stanford Linear Accelerator Center and submillimeter-wave klystrons at the University of Leeds. We are investigating the use of micro-machining technologies to develop THz regime TWTs, with emphasis on folded-waveguide TWTs. The folded-waveguide TWT (FW-TWT) has several features that make it attractive for THz-regime micro-VED applications. It is a relatively simple circuit to design and fabricate, it is amenable to precision pattern replication by micro-machining, and it is has been demonstrated capable of forward-wave amplification with appreciable bandwidth. We are conducting experimental and computational studies of micro-VED FW-TWTs to examine their feasibility for applications at frequencies from 200 - 1000 GHz.
Booske, John H.↗
Power Electronics for the Next Generation
This slide presentation reviews some of the voltage requirements for future electronic devices. Particularly the allowed voltage variation on electronic logic types.
Shue, Jack↗
Optical Potential Field Mapping System
The present invention relates to an optical system for creating a potential field map of a bounded two dimensional region containing a goal location and an arbitrary number of obstacles. The potential field mapping system has an imaging device and a processor. Two image writing modes are used by the imaging device, electron deposition and electron depletion. Patterns written in electron deposition mode appear black and expand. Patterns written in electron depletion mode are sharp and appear white. The generated image represents a robot's workspace. The imaging device under processor control then writes a goal location in the work-space using the electron deposition mode. The black image of the goal expands in the workspace. The processor stores the generated images, and uses them to generate a feedback pattern. The feedback pattern is written in the workspace by the imaging device in the electron deposition mode to enhance the expansion of the original goal pattern. After the feedback pattern is written, an obstacle pattern is written by the imaging device in the electron depletion mode to represent the obstacles in the robot's workspace. The processor compares a stored image to a previously stored image to determine a change therebetween. When no change occurs, the processor averages the stored images to produce the potential field map.
Reid, Max B.↗
Scanning electron microscopy in device diagnostics and reliability physics.
Scanning electron microscopy to study device failure and performance, discussing limitations and progress
Shaw, D. A.↗
Ultrawideband Electromagnetic Interference to Aircraft Radios: Results of Limited Functional Testing With United Airlines and Eagles Wings Incorporated, in Victorville, California
On February 14, 2002, the FCC adopted a FIRST REPORT AND ORDER, released it on April 22, 2002, and on May 16, 2002 published in the Federal Register a Final Rule, permitting marketing and operation of new products incorporating UWB technology. Wireless product developers are working to rapidly bring this versatile, powerful and expectedly inexpensive technology into numerous consumer wireless devices. Past studies addressing the potential for passenger-carried portable electronic devices (PEDs) to interfere with aircraft electronic systems suggest that UWB transmitters may pose a significant threat to aircraft communication and navigation radio receivers. NASA, United Airlines and Eagles Wings Incorporated have performed preliminary testing that clearly shows the potential for handheld UWB transmitters to cause cockpit failure indications for the air traffic control radio beacon system (ATCRBS), blanking of aircraft on the traffic alert and collision avoidance system (TCAS) displays, and cause erratic motion and failure of instrument landing system (ILS) localizer and glideslope pointers on the pilot horizontal situation and attitude director displays. This report provides details of the preliminary testing and recommends further assessment of aircraft systems for susceptibility to UWB electromagnetic interference.
Ely, Jay J.↗
Ultrawideband Electromagnetic Interference to Aircraft Radios
A very recent FCC Final Rule now permits marketing and operation of new products that incorporate Ultrawideband (UWB) technology into handheld devices. Wireless product developers are working to rapidly bring this versatile, powerful and expectedly inexpensive technology into numerous consumer wireless devices. Past studies addressing the potential for passenger-carried portable electronic devices (PEDs) to interfere with aircraft electronic systems suggest that UWB transmitters may pose a significant threat to aircraft communication and navigation radio receivers. NASA, United Airlines and Eagles Wings Incorporated have performed preliminary testing that clearly shows the potential for handheld UWB transmitters to cause cockpit failure indications for the air traffic control radio beacon system (ATCRBS), blanking of aircraft on the traffic alert and collision avoidance system (TCAS) displays, and cause erratic motion and failure of instrument landing system (ILS) localizer and glideslope pointers on the pilot horizontal situation and attitude director displays. This paper provides details of the preliminary testing and recommends further assessment of aircraft systems for susceptibility to UWB electromagnetic interference.
Ely, Jay J.↗
Tubes in space - Very much alive
Some advantages of TWTs over SSDs are discussed. Wideband TWTs have been developed which can produce 20 W of RF power at 20 GHz with 40 percent efficiency, a figure three or four times that available from SSDs such as FETs. The basic performance of TWTs exceeds that of SSDs for any given bandwidth and frequency. SSDs are transit time limited, and their performance deteriorates fundamentally as the reciprocal of the square of the operating frequency. Power limits for SSDs have been reached or are quickly being approached. Free electron devices such as tubes have an efficiency advantage because electrons in the vacuum travel faster than bulk charges in SSDs. Combined SSD devices are prone to burnout and incur penalties due to the need to dissipate heat. TWTs have a 6.7:1 advantage in radiator area ratio. Recent progress in TWT technology has produced a tenfold increase in CW output power, doubled to quadrupled the efficiency, and pushed frequency ranges into the terahertz region, orders of magnitude beyond the SSD cutoff.
Kosmahl, H. G.↗
Integrated Semiconductor/Optical Information Processors
Optical information processors made of integrated three-dimensional devices which include optical, electro-optical, and electronic devices. Integration achieved by combination and extension of advanced semiconductor (integrated-circuit) and integrated-optics technology. In integrated device, spatial light modulator fabricated on surface of chip. Leads to miniaturization of sophisticated optical information-processing systems.
Cheng, Li-Jen↗
Transferred substrate heterojunction bipolar transistors for millimeter and submillimeter wave applications
We report on our effort to develop the world's fastest transistor with the ultimate goal of utilizing them in electronic devices for advancing the present state of RF electronic systems.
InP HBT rf transistor III-V compound semiconductor↗
Reliability assurance - Study of failure and reliability of microelectronic devices Quarterly report, 1 Apr. - 30 Jun. 1968
Reliability assurance of microminiaturized electronic devices
Source record↗
Solid state devices
The Solid State Device research program is directed toward developing innovative devices for space remote and in-situ sensing, and for data processing. Innovative devices can result from the standard structures in innovative materials such as low and high temperature superconductors, strained layer superlattices, or diamond films. Innovative devices can also result from innovative structures achieved using electron tunneling or nanolithography in standard materials. A final step is to use both innovative structures and innovative materials. A new area of emphasis is the miniaturization of sensors and instruments molded by using the techniques of electronic device fabrication to micromachine silicon into micromechanical and electromechanical sensors and actuators.
Source record↗
Silicon Nanowire Growth at Chosen Positions and Orientations
It is now possible to grow silicon nanowires at chosen positions and orientations by a method that involves a combination of standard microfabrication processes. Because their positions and orientations can be chosen with unprecedented precision, the nanowires can be utilized as integral parts of individually electronically addressable devices in dense arrays. Nanowires made from silicon and perhaps other semiconductors hold substantial promise for integration into highly miniaturized sensors, field-effect transistors, optoelectronic devices, and other electronic devices. Like bulk semiconductors, inorganic semiconducting nanowires are characterized by electronic energy bandgaps that render them suitable as means of modulating or controlling electronic signals through electrostatic gating, in response to incident light, or in response to molecules of interest close to their surfaces. There is now potential for fabricating arrays of uniform, individually electronically addressable nanowires tailored to specific applications. The method involves formation of metal catalytic particles at the desired positions on a substrate, followed by heating the substrate in the presence of silane gas. The figure illustrates an example in which a substrate includes a silicon dioxide surface layer that has been etched into an array of pillars and the catalytic (in this case, gold) particles have been placed on the right-facing sides of the pillars. The catalytic thermal decomposition of the silane to silicon and hydrogen causes silicon columns (the desired nanowires) to grow outward from the originally catalyzed spots on the substrate, carrying the catalytic particles at their tips. Thus, the position and orientation of each silicon nanowire is determined by the position of its originally catalyzed spot on the substrate surface, and the orientation of the nanowire is perpendicular to the substrate surface at the originally catalyzed spot.
Getty, Stephanie A.↗
Photonic Integrated Circuit (PIC) Device Structures: Background, Fabrication Ecosystem, Relevance to Space Systems Applications, and Discussion of Related Radiation Effects
Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.
Body of Knowledge (BOK)↗
An overview of silicon carbide device technology
Recent progress in the development of silicon carbide (SiC) as a semiconductor is briefly reviewed. This material shows great promise towards providing electronic devices that can operate under the high-temperature, high-radiation, and/or high-power conditions where current semiconductor technologies fail. High quality single crystal wafers have become available, and techniques for growing high quality epilayers have been refined to the point where experimental SiC devices and circuits can be developed. The prototype diodes and transistors that have been produced to date show encouraging characteristics, but by the same token they also exhibit some device-related problems that are not unlike those faced in the early days of silicon technology development. Although these problems will not prevent the implementation of some useful circuits, the performance and operating regime of SiC electronics will be limited until these device-related issues are solved.
Neudeck, Philip G.↗
Storing Data In Circulating Electrons
Proposed memory device contains electrons traveling in circular orbit in vacuum. Orientations of electron spins (up or down) represents binary ones or zeros, respectively. Assuming length of each memory element 100 times classical fictitious electron radius, device theoretically capable of storing 446 gigabytes of data per meter of circumference of orbit.
Eastman, Ted R.↗