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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Defects in silicon effect on device performance and relationship to crystal growth conditions

A relationship between material defects in silicon and the performance of electronic devices will be described. A role which oxygen and carbon in silicon play during the defects generation process will be discussed. The electronic properties of silicon are a strong function of the oxygen state in the silicon. This state controls mechanical properties of silicon efficiency for internal gettering and formation of defects in the device's active area. In addition, to temperature, time, ambience, and the cooling/heating rates of high temperature treatments, the oxygen state is a function of the crystal growth process. The incorporation of carbon and oxygen into silicon crystal is controlled by geometry and rotation rates applied to crystal and crucible during crystal growths. Also, formation of nucleation centers for oxygen precipitation is influenced by the growth process, although there is still a controversy which parameters play a major role. All these factors will be reviewed with special emphasis on areas which are still ambiguous and controversial.

Jastrzebski, L.↗
NASA NTRS1986

Characterization of solar-grade silicon produced by the SiF4-Na process

A process was developed for producing low cost solar grade silicon by the reaction between SiF4 gas and sodium metal. The results of the characterization of the silicon are presented. These results include impurity levels, electronic properties of the silicon after crystal growth, and the performance of solar photovoltaic cells fabricated from wafers of the single crystals. The efficiency of the solar cells fabricated from semiconductor silicon and SiF4-Na silicon was the same.

Sanjurjo, A.↗
NASA NTRS1986

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗
NASA NTRS1987

Space environmental effects on polymeric materials

A study is presented of the effect of radiation on polymers. It helps to estimate the impact of the space environment on composite structures. Two commercially available polymer films were used; a polyetherimide, and a polysulfone. Both films were irradiated in vacuum with 85 KeV electron. Properties of the films before and after irradiation were monitored by tensile elongation measurements, ultraviolet/visible spectroscopy, glass transition temperature measurements, gel permeation chromatography, and infrared spectroscopy. The results of these characterizations are presented and briefly discussed.

Kiefer, Richard L.↗
NASA NTRS1988

Fluidized-Bed Deposition Of Single-Crystal Silicon

Uniformly thin single-crystal films of silicon produced by modification of fluidized-bed-reactor technique producing polysilicon by chemical vapor deposition. Proposed for silicon wafers for flat-plate solar arrays and results in different structural and electronic properties in deposition layer desirable for specific microelectronic or solar-cell processing. In process deposition occurs on silicon wafers, kept individually at temperatures above 1,000 degree C. Heated wafers held in unheated and minimally-agitated-fluidized bed of silicon particles and in low concentration of silane.

Hsu, George C.↗
NASA NTRS1988

Interfacial adhesion: Theory and experiment

Adhesion, the binding of different materials at an interface, is of general interest to many branches of technology, e.g., microelectronics, tribology, manufacturing, construction, etc. However, there is a lack of fundamental understanding of such diverse interfaces. In addition, experimental techniques generally have practical objectives, such as the achievement of sufficient strength to sustain mechanical or thermal effects and/or have the proper electronic properties. In addition, the theoretical description of binding at interfaces is quite limited, and a proper data base for such theoretical analysis does not exist. This presentation will review both experimental and theoretical aspects of adhesion in nonpolymer materials. The objective will be to delineate the critical parameters needed, governing adhesion testing along with an outline of testing objectives. A distinction will be made between practical and fundamental objectives. Examples are given where interfacial bonding may govern experimental consideration. The present status of theory is presented along wiith recommendations for future progress and needs.

Ferrante, John↗
NASA NTRS1988

Interfacial adhesion - Theory and experiment

Adhesion, the binding of different materials at an interface, is of general interest to many branches of technology, e.g., microelectronics, tribology, manufacturing, construction, etc. However, there is a lack of fundamental understanding of such diverse interfaces. In addition, experimental techniques generally have practical objectives, such as the achievement of sufficient strength to sustain mechanical or thermal effects and/or have the proper electronic properties. In addition, the theoretical description of binding at interfaces is quite limited, and a proper data base for such theoretical analysis does not exist. This presentation will review both experimental and theoretical aspects of adhesion in nonpolymer materials. The objective will be to delineate the critical parameters needed, governing adhesion testing along with an outline of testing objectives. A distinction will be made between practical and fundamental objectives. Examples are given where interfacial bonding may govern experimental consideration. The present status of theory is presented along with recommendations for future progress and needs.

Ferrante, John↗
NASA NTRS1988

Scanning Tunneling Microscopy methods for spectroscopic imaging of subsurface interfaces

A new method for spatially-resolved, spectroscopic investigation of subsurface interface structure has been developed. The method, Ballistic Electron Emission Microscopy (BEEM), is based on Scanning Tunneling Microscopy (STM) techniques. BEEM combines STM vacuum tunneling with unique ballistic electron spectroscopy capabilities. BEEM enables, for the first time, direct imaging of subsurface interface electronic properties with nanometer spatial resolution. STM topographic images of surface structure and BEEM images of subsurface properties are obtained simultaneously. BEEM capabilities are demonstrated by investigation of important metal-semiconductor interfaces.

Bell, L. D.↗
NASA NTRS1990

Status and applications of diamond and diamond-like materials: An emerging technology

Recent discoveries that make possible the growth of crystalline diamond by chemical vapor deposition offer the potential for a wide variety of new applications. This report takes a broad look at the state of the technology following from these discoveries in relation to other allied materials, such as high-pressure diamond and cubic boron nitride. Most of the potential defense, space, and commercial applications are related to diamond's hardness, but some utilize other aspects such as optical or electronic properties. The growth processes are reviewed, and techniques for characterizing the resulting materials' properties are discussed. Crystalline diamond is emphasized, but other diamond-like materials (silicon carbide, amorphous carbon containing hydrogen) are also examined. Scientific, technical, and economic problem areas that could impede the rapid exploitation of these materials are identified. Recommendations are presented covering broad areas of research and development.

Source record↗
NASA NTRS1990

Sulfur at nickel-alumina interfaces - Molecular orbital theory

Previous studies on Al-Ni alloys containing sulfur as an impurity suggest that, when S is in the interface between a metal and an oxide scale, it weakens the chemical bonding between them. This paper investigates factors responsible for this effect, using a molecular orbital theory to predict sulfur structures and electronic properties on the Ni-Al2O3 interface. It is shown that, in absence of S, the basal plane of Al2O3 will bind strongly through the Al(3+) cation surface to Ni (111). When segregated S impurity is present on the Ni surface, there are too few interfacial AlS bonds to effect good adhesion, leading to an inhibition of the oxide scale adhesion in NiCrAl alloys.

Hong, S. Y.↗
NASA NTRS1993

Novel infrared vibron absorption of solid hydrogen at megabar pressures

We report new phenomena associated with the infrared-active vibrons in hydrogen at megabar pressures. We find a striking 3 order of magnitude increase in vibron absorbance at the 150 GPa phase transition at 85 K. A discontinuity in the frequency of the infrared vibron is observed which is identical to that measured by Raman spectroscopy at the same temperature. The results indicate there is a significant change in electronic properties at the transition. In addition, the infrared measurements provide evidence for a phase transition at 110 GPa at low temperature.

Hanfland, Michael↗
NASA NTRS1993

Growth of semiconductor compound single crystal InSb by floating zone method (M-3)

Floating zone methods have potential applications in growing single high-quality semi-conductor crystals. In this method, melts can be sustained without containers and, therefore, are free from contamination from the containers. The main objective of this project is to use the Image Furnace to study a large diameter, (20 mm) single crystal of InSb under microgravity conditions. The behavior of the liquid column is recorded on the VTR tapes and is compared with what is expected theoretically. The single crystal grown in space is characterized by comparing it with single crystals grown on the ground with respect to crystallographic and electronic properties. The goal of this project is to confirm the effects of the microgravity on the single crystals.

Nakatani, I.↗
NASA NTRS1993

Fabrication of Si-As-Te ternary amorphous semiconductor in the microgravity environment (M-13)

Ternary chalcogenide Si-As-Te system is an interesting semiconductor from the aspect of both basic physics and technological applications. Since a Si-As-Te system consists of a IV-III-II hedral bonding network, it has a very large glass forming region with a wide physical constant controllability. For example, its energy gap can be controlled in a range from 0.6 eV to 2.5 eV, which corresponds to the classical semiconductor Ge (0.66 eV), Si (1.10 eV), GaAs (1.43 eV), and GaP (2.25 eV). This fact indicates that it would be a suitable system to investigate the compositional dependence of the atomic and electronic properties in the random network of solids. In spite of these significant advantages in the Si-As-Te amorphous system, a big barrier impending the wide utilization of this material is the huge difficulty encountered in the material preparation which results from large differences in the weight density, melting point, and vapor pressure of individual elements used for the alloying composition. The objective of the FMPT/M13 experiment is to fabricate homogeneous multi-component amorphous semiconductors in the microgravity environment of space, and to make a series of comparative characterizations of the amorphous structures and their basic physical constants on the materials prepared both in space and in normal terrestrial gravity.

Hamakawa, Yoshihiro↗
NASA NTRS1993

Micro-opto-mechanical devices and systems using epitaxial lift off

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Camperi-Ginestet, C.↗
NASA NTRS1995

Controlled Thin-Film Growth Of Silicon Carbide Polytypes

Improved deposition process to grows thin layers of silicon carbide having chosen crystalline structures. Process incorporated into sequences of deposition and etching steps used to fabricate silicon-carbide-based semiconductor devices. Important advance because silicon carbide emerging as superior semiconductor for devices operating under conditions of high power, high temperature, and/or high frequency. Furthermore, various crystalline structures of SiC have different electronic properties, each suited to specific application.

Powell, J. Anthony↗
NASA NTRS1995

Polyimides That Contain Cyclobutene-3,4-Dione Moieties

Linear aromatic polyimides containing cyclobutene-3,4,-dione moieties synthesized in experiments. Polymers exhibit high thermal and thermo-oxidative stabilities, making them useful in structural components exposed to hot and/or oxidative environments, as in jet engines and on outer surfaces of supersonic aircraft. Electrons in cyclobutene-3,4-dione moieties readily excited to states of higher energy upon exposure to ultraviolet light, giving rise to electronic properties with potential utility in photovoltaic, photoconductive, and/or photoemissive devices.

St. Clair, Terry L.↗
NASA NTRS1998

Syntheses of Octasubstituted Metal Phthalocyanines for Nonlinear Optics

Many organic materials can be used as nonlinear optical media. Phthalocyanines are of special interest because they show an unusually large third order nonlinear response, they are thermally and photochemically stable and they can be formed into oriented thin films (Langmuir-Blodgett films). They also can be easily complexed by a large variety of metals, which place them at the interface between organics and organometallics, and allows for fine tuning of the macro cycle electronic properties by the coordinated metal and substituent groups. A series of 1,4,8,11,15,18,22,25-octaalkoxy metal-free and metal phthalocyanines and 2,3,9,10,16,17,23,24-octaalkoxy metal phthalocyanines has been synthesized. Their nonlinear optical properties have been measured. The physical properties of all the phthalocyanines synthesized in this work are subject to both acid and solvent effects.

Guo, Huaisong↗
NASA NTRS1998

"Un-annealed and Annealed Pd Ultra-Thin Film on SiC Characterized by Scanning Probe Microscopy and X-ray Photoelectron Spectroscopy"

Pd/SiC has been used as a hydrogen and a hydrocarbon gas sensor operated at high temperature. UHV (Ultra High Vacuum)-Scanning Tunneling Microscopy (STM), Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) techniques were applied to study the relationship between the morphology and chemical compositions for Pd ultra-thin films on SiC (less than 30 angstroms) at different annealing temperatures. Pd ultra-thin film on 6H-SiC was prepared by the RF sputtering method. The morphology from UHV-STM and AFM shows that the Pd thin film was well deposited on SiC substrate, and the Pd was partially aggregated to round shaped participates at an annealing temperature of 300 C. At 400 C, the amount of surface participates decreases, and some strap shape participates appear. From XPS, Pd2Si was formed on the surface after annealing at 300 C, and all Pd reacted with SiC to form Pd2Si after annealing at 400 C. The intensity of the XPS Pd peak decreases enormously at 400 C. The Pd film diffused into SiC, and the Schottky barrier height has almost no changes. The work shows the Pd sicilides/SiC have the same electronic properties with Pd/SiC, and explains why the Pd/SiC sensor still responds to hydrogen at high operating temperatures.

Lu, W. J.↗