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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Evidence and detailed study of a second-order phase transition in the (C{sub 6}H{sub 11}NH{sub 3}){sub 2}[PbI{sub 4}] organic-inorganic hybrid material

The thermal properties of the organic-inorganic hybrid material (C{sub 6}H{sub 11}NH{sub 3}){sub 2}[PbI{sub 4}] are investigated using diffuse reflectivity, spectroscopic ellipsometry, differential scanning calorimetry, Raman spectroscopy, and X-ray diffraction. The diffuse reflectivity, performed in heating mode, clearly evidences the presence of a singularity at 336 K. This is confirmed by the temperature dependence of the spectroscopic ellipsometry spectra, which points out a second-order phase transition at 336 K with a critical exponent ∼0.5. Differential scanning calorimetry measurements on a polycrystalline powder of (C{sub 6}H{sub 11}NH{sub 3}){sub 2}[PbI{sub 4}] show a reversible phase transition detected at T{sub C} = 336 K without hysteresis. Raman spectroscopy data suggest that this transition arises from a change in the interactions between inorganic sheets (([PbI{sub 4}]{sup 2−}){sub ∞}) and organic protonated molecules ([C{sub 6}H{sub 11}NH{sub 3}]{sup +}). The structural analysis from power X-ray diffraction reveals an incomplete order-disorder transition of the cyclohexylammonium cation, causing a subtle contraction of the inter-plane distance. The transition results from repulsive close contacts between the organic molecules in the interlayer spacing.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescence spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electronic and optical properties of titanium nitride bulk and surfaces from first principles calculations

Prediction of the frequency-dependent dielectric function of thin films poses computational challenges, and at the same time experimental characterization by spectroscopic ellipsometry remains difficult to interpret because of changes in stoichiometry and surface morphology, temperature, thickness of the film, or substrate. In this work, we report calculations for titanium nitride (TiN), a promising material for plasmonic applications because of less loss and other practical advantages compared to noble metals. We investigated structural, electronic, and optical properties of stoichiometric bulk TiN, as well as of the TiN(100), TiN(110), and TiN(111) outermost surfaces. Density functional theory (DFT) and many-body GW methods (Green's (G) function-based approximation with screened Coulomb interaction (W)) were used, ranging from G{sub 0}W{sub 0}, GW{sub 0} to partially self-consistent sc-GW{sub 0}, as well as the GW-BSE (Bethe-Salpeter equation) and time-dependent DFT (TDDFT) methods for prediction of the optical properties. Structural parameters and the band structure for bulk TiN were shown to be consistent with previous work. Calculated dielectric functions, plasma frequencies, reflectivity, and the electron energy loss spectrum demonstrated consistency with experiment at the GW{sub 0}-BSE level. Deviations from experimental data are expected due to varying experimental conditions. Comparison of our results to spectroscopic ellipsometry data for realistic nanostructures has shown that although TDDFT may provide a computationally feasible level of theory in evaluation of the dielectric function, application is subject to validation with GW-BSE calculations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Theory of activated glassy relaxation, mobility gradients, surface diffusion, and vitrification in free standing thin films

We have constructed a quantitative, force level, statistical mechanical theory for how confinement in free standing thin films introduces a spatial mobility gradient of the alpha relaxation time as a function of temperature, film thickness, and location in the film. The crucial idea is that relaxation speeds up due to the reduction of both near-surface barriers associated with the loss of neighbors in the local cage and the spatial cutoff and dynamical softening near the vapor interface of the spatially longer range collective elasticity cost for large amplitude hopping. These two effects are fundamentally coupled. Quantitative predictions are made for how an apparent glass temperature depends on the film thickness and experimental probe technique, the emergence of a two-step decay and mobile layers in time domain measurements, signatures of confinement in frequency-domain dielectric loss experiments, the dependence of film-averaged relaxation times and dynamic fragility on temperature and film thickness, surface diffusion, and the relationship between kinetic experiments and pseudo-thermodynamic measurements such as ellipsometry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Optical and structural properties of 100 MeV Fe{sup 9+} ion irradiated InP

Single crystal InP samples were irradiated with 100 MeV Fe{sup 9+} ions for ion fluences 1x10{sup 12} and 1x10{sup 13} cm{sup −2}. Optical properties of irradiated InP was investigated by Spectroscopic Ellipsometry and UV-VIS-NIR spectroscopy. The optical parameters like, refractive index, extinction coefficient, absorption coefficient is found to be fluence dependent near the surface as well as near the projected range. Small change in the optical parameters near the surface region as investigated by Spectroscopic Ellipsometry indicatesthat the surfaces of irradiated InP are similar to non-irradiated InP. This is also supported by RBS/C measurements. The UV-VIS-NIR study revealed the decrease in the band gap and increase in the defect concentration in the irradiated sample as a result of nuclear energy loss.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

The optical properties of bulk InAs{sub 0.936}Bi{sub 0.064} grown by molecular beam epitaxy on a (100)-oriented GaSb substrate are measured using spectroscopic ellipsometry. The index of refraction and absorption coefficient are measured over photon energies ranging from 44 meV to 4.4 eV and are used to identify the room temperature bandgap energy of bulk InAs{sub 0.936}Bi{sub 0.064} as 60.6 meV. The bandgap of InAsBi is expressed as a function of Bi mole fraction using the band anticrossing model and a characteristic coupling strength of 1.529 eV between the Bi impurity state and the InAs valence band. These results are programmed into a software tool that calculates the miniband structure of semiconductor superlattices and identifies optimal designs in terms of maximizing the electron-hole wavefunction overlap as a function of transition energy. These functionalities are demonstrated by mapping the design spaces of lattice-matched GaSb/InAs{sub 0.911}Sb{sub 0.089} and GaSb/InAs{sub 0.932}Bi{sub 0.068} and strain-balanced InAs/InAsSb, InAs/GaInSb, and InAs/InAsBi superlattices on GaSb. The absorption properties of each of these material systems are directly compared by relating the wavefunction overlap square to the absorption coefficient of each optimized design. Optimal design criteria are provided for key detector wavelengths for each superlattice system. The optimal design mid-wave infrared InAs/InAsSb superlattice is grown using molecular beam epitaxy, and its optical properties are evaluated using spectroscopic ellipsometry and photoluminescence spectroscopy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Liquid gallium and the eutectic gallium indium (EGaIn) alloy: Dielectric functions from 1.24 to 3.1 eV by electrochemical reduction of surface oxides

Liquid metals based on gallium are promising materials for soft, stretchable, and shape reconfigurable electromagnetic devices. The behavior of these metals relates directly to the thicknesses of their surface oxide layers, which can be determined nondestructively by ellipsometry if their dielectric functions ε are known. This paper reports on the dielectric functions of liquid gallium and the eutectic gallium indium (EGaIn) alloy from 1.24 to 3.1 eV at room temperature, measured by spectroscopic ellipsometry. Overlayer-induced artifacts, a continuing problem in optical measurements of these highly reactive metals, are eliminated by applying an electrochemically reductive potential to the surface of the metal immersed in an electrolyte. This technique enables measurements at ambient conditions while avoiding the complications associated with removing overlayers in a vacuum environment. The dielectric responses of both metals are closely represented by the Drude model. The EGaIn data suggest that in the absence of an oxide the surface is In-enriched, consistent with the previous vacuum-based studies. Possible reasons for discrepancies with previous measurements are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Atomic and electronic structures of lutetium oxide Lu{sub 2}O{sub 3}

The chemical composition, electronic structure, structure, and physical properties a lutetium oxide Lu{sub 2}O{sub 3} film are studied by X-ray photoelectron spectroscopy, ellipsometry, and X-ray absorption spectroscopy. The short-range order in Lu{sub 2}O{sub 3} is found to correspond to its cubic modification. The binding energies of the 1s and 2p levels of oxygen and the 4d{sub 5/2} and 4f{sub 7/2} levels of lutetium are 529.2, 5.0 and 7.4, 195.9 eV, respectively. The energy gap determined from the electron energy loss spectrum of the film is 5.9 eV. The electron energy loss spectra have two peaks at 17.4 and 22.0 eV, which can be attributed to the excitation of bulk plasma oscillations. The dispersion of the refractive index is measured by spectral ellipsometry. The refractive index is shown to increase from 1.82 at 1.5 eV to 2.18 at 5.0 eV, and the high-frequency permittivity of Lu{sub 2}O{sub 3} is 3.31.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2016

Optical evidence of quantum rotor orbital excitations in orthorhombic manganites

In magnetic compounds with Jahn–Teller (JT) ions (such as Mn{sup 3+} or Cu{sup 2+}), the ordering of the electron or hole orbitals is associated with cooperative lattice distortions. There the role of JT effect, although widely recognized, is still elusive in the ground state properties. Here we discovered that, in these materials, there exist excitations whose energy spectrum is described in terms of the total angular momentum eigenstates and is quantized as in quantum rotors found in JT centers. We observed features originating from these excitations in the optical spectra of a model compound LaMnO{sub 3} using ellipsometry technique. They appear clearly as narrow sidebands accompanying the electron transition between the JT split orbitals at neighboring Mn{sup 3+} ions, displaying anomalous temperature behavior around the Néel temperature T{sub N} ≈ 140 K. We present these results together with new experimental data on photoluminescence found in LaMnO{sub 3}, which lend additional support to the ellipsometry implying the electronic-vibrational origin of the quantum rotor orbital excitations. We note that the discovered orbital excitations of quantum rotors may play an important role in many unusual properties observed in these materials upon doping, such as high-temperature superconductivity and colossal magnetoresistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Study of the morphology and optical properties of anodic oxide layers on InAs (111)III

The effect of the electrolyte composition on the surface morphology and the dispersion dependences of the refractive index and extinction coefficient of {approx}20-nm-thick anodic layers on InAs (111)III substrates is studied by atomic force microscopy and spectral ellipsometry. It is shown that oxidation in electrolytes with different acidities does not modify the surface morphology of the initial InAs substrates. The films formed upon oxidation exhibit close dispersion dependences, despite the difference in the chemical composition between the films. This makes possible the high-precision monitoring of the thickness of anodic layers on InAs substrates by means of ellipsometry with the optical model of a single-layer isotropic film on an absorbing substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Tackling Disorder in γ‐Ga 2 O 3

Abstract Ga 2 O 3 and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga 2 O 3 offers potential for electronic structure engineering, which is of particular interest for a range of applications, such as power electronics. γ‐Ga 2 O 3 presents a particular challenge across synthesis, characterization, and theory due to its inherent disorder and resulting complex structure–electronic‐structure relationship. Here, density functional theory is used in combination with a machine‐learning approach to screen nearly one million potential structures, thereby developing a robust atomistic model of the γ‐phase. Theoretical results are compared with surface and bulk sensitive soft and hard X‐ray photoelectron spectroscopy, X‐ray absorption spectroscopy, spectroscopic ellipsometry, and photoluminescence excitation spectroscopy experiments representative of the occupied and unoccupied states of γ‐Ga 2 O 3 . The first onset of strong absorption at room temperature is found at 5.1 eV from spectroscopic ellipsometry, which agrees well with the excitation maximum at 5.17 eV obtained by photoluminescence excitation spectroscopy, where the latter shifts to 5.33 eV at 5 K. This work presents a leap forward in the treatment of complex, disordered oxides and is a crucial step toward exploring how their electronic structure can be understood in terms of local coordination and overall structure.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Imaging the Thickness of Passivation Layers for Crystalline Silicon with Micron‐Scale Spatial Resolution Using Spectral Photoluminescence

Thin films deposited on crystalline silicon surfaces are critical components of many silicon‐based devices, including high‐efficiency photovoltaic cells. Knowledge of their optical and electronic properties is important in designing and fabricating efficient solar cells, especially as the device complexity increases and includes micron‐scale features. Here, a camera‐based photoluminescence (PL) technique is developed to image the thickness of specific passivating films on silicon wafers. The technique is entirely contactless and nondestructive, requires minimal sample preparation, and provides a large dynamic range in terms of field of view, with micron‐scale spatial resolution possible. It retains the advantages of PL imaging, a mainstream technique for photovoltaic material and device characterization, and it has some extra capabilities similar to those of ellipsometry. This newly developed technique is demonstrated on hydrogenated amorphous silicon and silicon nitride films, two important passivation technologies for high‐efficiency silicon solar cells.

Nguyen, Hieu T.↗
DOE OSTI2017

Determining and Controlling the Magnesium Composition in CdTe/CdMgTe Heterostructures

The relationships between Mg composition, band gap, and lattice characteristics are investigated for Cd 1-x Mg x Te barrier layers using a combination of cathodoluminescence, energy dispersive x-ray spectroscopy, variable angle spectral ellipsometry, and atom probe tomography. The use of a simplified, yet accurate, variable angle spectral ellipsometry analysis is shown to be appropriate for fast determination of composition in thin Cd 1-x Mg x Te layers. The validity of using high-resolution x-ray diffraction for CdTe/Cd 1-x Mg x Te double heterostructures is discussed. Furthermore, the stability of CdTe/Cd 1-x Mg x Te heterostructures are investigated with respect to thermal processing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Atomic Layer Deposition of Nickel Using Ni(dmamb)2 and ZnO Adhesion Layer Without Plasma

Abstract In this study, a novel deposition technique that utilizes diethylzinc (C 4 H 10 ZnO) with H 2 O to form a ZnO adhesion layer was proposed. This technique was followed by the deposition of vaporized nickel(II) 1-dimethylamino-2-methyl-2-butoxide (Ni(dmamb) 2 ) and H 2 gas to facilitate the deposit of uniform layers of nickel on the ZnO adhesion layer using atomic layer deposition. Deposition temperatures ranged from 220 to 300 °C. Thickness, composition, and crystallographic structure results were analyzed using spectroscopic ellipsometry, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and X-ray diffraction (XRD), respectively. An average growth rate of approximately 0.0105 angstroms per cycle at 260 °C was observed via ellipsometry. Uniform deposition of ZnO with less than 1% of Ni was displayed by utilizing the elemental analysis function via SEM, thereby providing high-quality images. XPS revealed ionizations consistent with nickel and ZnO through the kinetic and binding energies of each detected electron. XRD provided supplemental information regarding the validity of ZnO by exhibiting crystalline attributes, revealing the presence of its hexagonal wurtzite structure.

Baker, Kaiya↗
DOE OSTI2021

Mixed Tin-Titanium Oxides by Atomic Layer Deposition on Planar Substrates: Physical and Electronic Structure

Ternary atomic layer deposition of Sn-doped TiO x (Sn:TiO x ) and Ti-doped SnO x (Ti:SnO x ) was performed using tetrakisdimethylamidotitanium (IV) and tin(IV) with water at 150 °C on (1 0 0) Si and quartz substrates. The physical structure of the films was investigated using scanning electron, atomic force, and Kelvin probe force microscopies as well as spectroscopic ellipsometry, Raman spectroscopy, and X-ray diffraction. All as-deposited films are amorphous and possessed flat and conformal topographies with low surface roughness (<1 nm). Annealed Sn:TiO x and Ti:SnO x crystallize into the tetragonal anatase TiO 2 and cassiterite SnO 2 structures, respectively, without large variations to the film topography. The chemical composition of the as-deposited and annealed films was investigated through X-ray photoelectron spectroscopy. While dopants are homogenously mixed, the ternary ALD to form Sn:TiO x and Ti:SnO x surprisingly does not follow the rule of mixtures, despite similarities in both the growth rates of binary SnO x and TiO x and the precursors used. This finding is also supported by spectroscopic ellipsometry. Here, we postulate the deviation from the rule of mixtures is due to non-ideal surface chemistry of the binary ALD of SnO x . The optical bandgap of all films was quantified by the Tauc analysis and the valence band position was investigated by valence band X-ray photoelectron spectroscopy. Intra-bandgap states above the valence band maximum were observed for as-deposited Ti:SnO x and Sn:TiO x and ascribed to 5 s states from Sn 2+ ions. The presence of these intra-bandgap states induces enhanced visible absorption and bathochromic shifts to the apparent bandgap for all as-deposited films. Annealing the films removes the intra-bandgap states and increases the optical bandgap. Simplified band diagrams created using the data available demonstrated that the conduction and valence band positions did not vary between the positions of pure TiO 2 or SnO 2 with monotonic increases to the dopant incorporation.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tailoring Surface Properties through in Situ Functionality Gradients in Reactively Modified Poly(2-vinyl-4,4-dimethyl azlactone) Thin Films

Generating physical or chemical gradients in thin-film scaffolds is an efficient approach for screening and optimizing an interfacial structure or chemical functionality to create tailored surfaces that are useful because of their wetting, antifouling, or barrier properties. In this paper, the relationship between the structure of poly(2-vinyl-4,4-dimethyl azlactone) (PVDMA) brushes created by the preferential assembly of poly(glycidyl methacrylate)-block-PVDMA diblock copolymers and the ability to chemically modify the PVDMA chains in situ to create a gradient in functionality are examined to investigate how the extent of functionalization affects the interfacial and surface properties. The introduction of a chemical gradient by controlled immersion allows reactive modification to generate position-dependent properties that are assessed by ellipsometry, attenuated total reflectance-Fourier transform infrared spectroscopy, contact angle measurements, and atomic force microscopy imaging. After functionalization of the azlactone rings with n-alkyl amines, ellipsometry confirms an increase in thickness and contact angle measurements support an increase in hydrophobicity along the substrate. These results are used to establish relationships between layer thickness, reaction time, position, and the extent of functionalization and demonstrate that gradual immersion into the functionalizing solution results in a linear change in chemical functionality along the surface. Finally, these findings broadly support efforts to produce tailored surfaces by in situ chemical modification, having application as tailored membranes, protein resistant surfaces, or sensors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Nonlinear Layer-by-Layer Films: Effects of Chain Diffusivity on Film Structure and Swelling

Here in this paper, we report on the role of molecular diffusivity in the formation of nonlinearly growing polyelectrolyte multilayers (nlPEMs). Electrostatically bound polyelectrolyte multilayers were assembled from poly(methacrylic acid) (PMAA) as a polyanion and quaternized poly(2-(dimethylamino)ethyl methacrylate) (QPC) as a polycation. Film growth as measured by ellipsometry was strongly dependent on the time allowed for each polymer deposition step, suggesting that the diffusivities of the components are crucial in controlling the rate of film growth. Uptake of polyelectrolytes within nlPEMs was relatively slow and occurred on time scales ranging from minutes to hours, depending on the film thickness. Spectroscopic ellipsometry measurements with nlPEM films exposed to aqueous solutions exhibited high (severalfold) degrees of film swelling and different swelling values for films exposed to QPC or PMAA solutions. FTIR spectroscopy showed that the average ionization of film-assembled PMAA increased upon binding of QPC and decreased upon binding of PMAA, in agreement with the charge regulation mechanism for weak polyelectrolytes. The use of neutron reflectometry (NR) enabled quantification of chain intermixing within the film, which was drastically enhanced when longer times were allowed for polyelectrolyte deposition. Diffusion coefficients of the polycation derived from the uptake rates of deuterated chains within hydrogenated films were of the order of 10 –14 cm 2 /s, i.e., 5–6 orders of magnitude smaller than those found for diffusion of free polymer chains in solution. Exchange of the polymer solutions to buffer inhibited film intermixing. Taken together, these results contribute to understanding the mechanism of the growth of nonlinear polyelectrolyte multilayers and demonstrate the possibility of controlling film intermixing, which is highly desirable for potential future applications.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Synthesis, Structure, and Spectroscopy of Epitaxial EuFeO 3 Thin Films

Rare earth iron perovskites RFeO3, where R is a rare earth cation, exhibit an array of magnetic, catalytic, optical, and electrochemical properties. Here we study EuFeO3 films synthesized by molecular beam epitaxy to improve our understanding of the optical properties of ferrites. A combination of X-ray diffraction, X-ray reflectivity, Rutherford backscattering spectroscopy, and scanning transmission electron microscopy was used to characterize the film structure and cation composition. X-ray absorption spectroscopy confirms the nominal 3+ valence states of Eu and Fe. The optical properties of EuFeO3 were investigated using variable-angle spectroscopic ellipsometry between the photon energies of 1.25 and 5 eV. We find that EuFeO3 is a semiconductor with an onset of optical absorption near 2.5 eV. The absorption spectrum of EuFeO3 is blue-shifted with respect to LaFeO3 films, a result that is attributed to the structural differences between the two materials.

Choquette, Amber K.↗